ATE500347T1 - Magnetische shunts in rohrtargets - Google Patents

Magnetische shunts in rohrtargets

Info

Publication number
ATE500347T1
ATE500347T1 AT08019797T AT08019797T ATE500347T1 AT E500347 T1 ATE500347 T1 AT E500347T1 AT 08019797 T AT08019797 T AT 08019797T AT 08019797 T AT08019797 T AT 08019797T AT E500347 T1 ATE500347 T1 AT E500347T1
Authority
AT
Austria
Prior art keywords
tube target
magnetic shunts
carrier body
target
target material
Prior art date
Application number
AT08019797T
Other languages
English (en)
Inventor
Hans-Joachim Pavel
Josef Heindel
Original Assignee
Heraeus Gmbh W C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Gmbh W C filed Critical Heraeus Gmbh W C
Application granted granted Critical
Publication of ATE500347T1 publication Critical patent/ATE500347T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Tires In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control Of Combustion (AREA)
AT08019797T 2007-11-29 2008-11-12 Magnetische shunts in rohrtargets ATE500347T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007057870 2007-11-29
DE102007060306A DE102007060306B4 (de) 2007-11-29 2007-12-12 Magnetische Shunts in Rohrtargets

Publications (1)

Publication Number Publication Date
ATE500347T1 true ATE500347T1 (de) 2011-03-15

Family

ID=40621309

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08019797T ATE500347T1 (de) 2007-11-29 2008-11-12 Magnetische shunts in rohrtargets

Country Status (4)

Country Link
US (1) US8137518B2 (de)
CN (1) CN101445914B (de)
AT (1) ATE500347T1 (de)
DE (2) DE102007060306B4 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8951394B2 (en) * 2010-01-29 2015-02-10 Angstrom Sciences, Inc. Cylindrical magnetron having a shunt
KR20130099194A (ko) * 2011-04-12 2013-09-05 가부시키가이샤 아루박 타겟 및 타겟의 제조 방법
AT14912U1 (de) * 2015-05-06 2016-08-15 Plansee Se Anschlussstück für Rohrtarget
WO2022145244A1 (ja) * 2020-12-28 2022-07-07 デクセリアルズ株式会社 スパッタリングターゲット部材及びその製造方法、スパッタ膜の製造方法、並びにマグネトロンスパッタリング装置
CN112899628A (zh) * 2021-01-18 2021-06-04 福建阿石创新材料股份有限公司 一种可均匀溅射旋转硅靶材及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318828C2 (de) * 1983-05-24 1986-01-02 Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde Verfahren zum Aufbonden von Targetmaterial
JPH01147063A (ja) 1987-12-03 1989-06-08 Ulvac Corp マグネトロン・スパッタ装置
WO1996015283A1 (en) 1994-11-15 1996-05-23 Tosoh Smd, Inc. Method of bonding targets to backing plate member
DE19622606C2 (de) 1996-06-05 2002-02-28 Applied Films Gmbh & Co Kg Sputterkathode
DE69937948D1 (de) 1999-06-21 2008-02-21 Bekaert Advanced Coatings N V Magnetron mit beweglicher Magnetanordnung zur Kompensation des Erosionsprofils
DE10063383C1 (de) * 2000-12-19 2002-03-14 Heraeus Gmbh W C Verfahren zur Herstellung eines Rohrtargets und Verwendung
JP2003138372A (ja) 2001-10-30 2003-05-14 Applied Materials Inc スパッタリングターゲット及びスパッタリング装置
DE10336422A1 (de) 2003-08-08 2005-03-17 Applied Films Gmbh & Co. Kg Vorrichtung zur Kathodenzerstäubung
DE102004058316A1 (de) * 2004-12-02 2006-06-08 W.C. Heraeus Gmbh Rohrförmiges Sputtertarget
DE202005015067U1 (de) 2005-09-23 2005-12-29 Applied Films Gmbh & Co. Kg Kathodenanordnung, Beschichtungskompartment und Beschichtungsanlage
DE102006026005A1 (de) * 2006-06-01 2007-12-06 W.C. Heraeus Gmbh Kaltgepresste Sputtertargets

Also Published As

Publication number Publication date
CN101445914B (zh) 2012-08-22
DE502008002715D1 (de) 2011-04-14
CN101445914A (zh) 2009-06-03
DE102007060306A1 (de) 2009-06-10
US20090139861A1 (en) 2009-06-04
DE102007060306B4 (de) 2011-12-15
US8137518B2 (en) 2012-03-20

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