ATE499455T1 - ELEMENT STRUCTURE WITH A WIRING MATERIAL MADE OF AL-NI-B ALLOY - Google Patents

ELEMENT STRUCTURE WITH A WIRING MATERIAL MADE OF AL-NI-B ALLOY

Info

Publication number
ATE499455T1
ATE499455T1 AT06730624T AT06730624T ATE499455T1 AT E499455 T1 ATE499455 T1 AT E499455T1 AT 06730624 T AT06730624 T AT 06730624T AT 06730624 T AT06730624 T AT 06730624T AT E499455 T1 ATE499455 T1 AT E499455T1
Authority
AT
Austria
Prior art keywords
wiring material
alloy
material made
element structure
assumed
Prior art date
Application number
AT06730624T
Other languages
German (de)
Inventor
Hironari Urabe
Yoshinori Matsuura
Takashi Kubota
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2005/015697 external-priority patent/WO2006117884A1/en
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Priority claimed from PCT/JP2006/306676 external-priority patent/WO2006117954A1/en
Application granted granted Critical
Publication of ATE499455T1 publication Critical patent/ATE499455T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention provides an Al alloy wiring material, which is capable of being directly bonded to transparent electrode layers such as ITO, IZO and the like, further to semiconductor layers such as n+-Si, in a display device provided with a thin-film transistor or a transparent electrode layer. In an Al-Ni-B alloy wiring material according to the present invention, when a nickel content is assumed X at% as an atomic percent of nickel and a boron content is assumed Y at% as an atomic percent of boron, formulae 0.5 ≤ X ≤ 10.0, 0.05 ≤ Y ≤ 11.0, Y+0.25X ≥ 1.0, and Y+1.15X ≤ 11.5 are all satisfied in terms of scope, and the balance being aluminum.
AT06730624T 2005-04-26 2006-03-30 ELEMENT STRUCTURE WITH A WIRING MATERIAL MADE OF AL-NI-B ALLOY ATE499455T1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005128670 2005-04-26
PCT/JP2005/015697 WO2006117884A1 (en) 2005-04-26 2005-08-30 Al-Ni-B ALLOY WIRING MATERIAL AND DEVICE STRUCTURE USING SAME
JP2005302871A JP4657882B2 (en) 2005-04-26 2005-10-18 Element structure of display device
JP2005302900 2005-10-18
PCT/JP2006/306676 WO2006117954A1 (en) 2005-04-26 2006-03-30 Al-Ni-B ALLOY WIRING MATERIAL AND ELEMENT STRUCTURE USING THE SAME

Publications (1)

Publication Number Publication Date
ATE499455T1 true ATE499455T1 (en) 2011-03-15

Family

ID=43646158

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06730624T ATE499455T1 (en) 2005-04-26 2006-03-30 ELEMENT STRUCTURE WITH A WIRING MATERIAL MADE OF AL-NI-B ALLOY

Country Status (3)

Country Link
AT (1) ATE499455T1 (en)
DE (1) DE602006020265D1 (en)
TW (1) TWI326309B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7683370B2 (en) 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
WO2010004783A1 (en) * 2008-07-07 2010-01-14 三井金属鉱業株式会社 Al-ni-based alloy wiring electrode material

Also Published As

Publication number Publication date
TWI326309B (en) 2010-06-21
DE602006020265D1 (en) 2011-04-07
TW200643186A (en) 2006-12-16

Similar Documents

Publication Publication Date Title
TW200725906A (en) Source/drain electrodes, transistor substrates and manufacture methods thereof, and display devices
TWI411146B (en) Diamond-like carbon electronic devices and methods of manufacture
JP2013219151A5 (en)
TW200718278A (en) Organic electroluminescence display device
TW200713734A (en) Method of forming an integrated voltage protection device and structure
TW200834198A (en) Display device and method of producing the same
TW200606150A (en) Charge transport compounds and electronic devices made with such compounds
TWI247406B (en) Semiconductor carrier film, and semiconductor device and liquid crystal module using the same
ATE499455T1 (en) ELEMENT STRUCTURE WITH A WIRING MATERIAL MADE OF AL-NI-B ALLOY
TW200637431A (en) Organic semiconductor light-emitting element and display device
WO2007106836A3 (en) Additives for stable nanotube coatings
TW200746439A (en) Semiconductor device and active matrix display device
DE602008004657D1 (en) PLASTIC LAMINATES AND METHOD OF MANUFACTURING THEREOF
TW200700523A (en) Adhesive and luminescent element
Oh et al. Electrical characteristics of a bendable a-Si: H thin film transistor with overlapped gate and source/drain regions
ATE541712T1 (en) DOCUMENT WITH AN INTEGRATED DISPLAY DEVICE
JP2011082089A5 (en)
Shin et al. Surface-plasmon-mediated enhancement of photoluminescence from hybrid structures of indium zinc oxide/Ag/indium zinc oxide
Alford Enhanced Adhesion of Organic Layer/Film/Substrate Surfaces to Inorganic Layer/Film/Substrate Surfaces
Kim et al. Fabrication of Nitrocellulose based Organic Material as a Gate Dielectric Layer for Oxide Thin Film Transistor
TW200603669A (en) Organic EL device and method for fabricating same
Li Metal complexes including bridged cyclometalating ligands for use as host materials for organic light emitting devices and other applications
Yanagihara et al. Electroluminescence from DC Biased ZnS: TbF3 phosphor layers having oxide semiconductor
Alford Low Temperature Process to Make Copper Germanide Thin Film (Cu3Ge) Contact and Metallization
Jang et al. Metal oxide for large area electronics

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties