ATE498901T1 - Endpunkterkennung für die atzung von photomasken - Google Patents

Endpunkterkennung für die atzung von photomasken

Info

Publication number
ATE498901T1
ATE498901T1 AT07021045T AT07021045T ATE498901T1 AT E498901 T1 ATE498901 T1 AT E498901T1 AT 07021045 T AT07021045 T AT 07021045T AT 07021045 T AT07021045 T AT 07021045T AT E498901 T1 ATE498901 T1 AT E498901T1
Authority
AT
Austria
Prior art keywords
endpoint detection
etching
photomask
support member
substrate support
Prior art date
Application number
AT07021045T
Other languages
English (en)
Inventor
Michael Grimbergen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/844,868 external-priority patent/US20080099436A1/en
Priority claimed from US11/844,838 external-priority patent/US20080099435A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE498901T1 publication Critical patent/ATE498901T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)
AT07021045T 2006-10-30 2007-10-26 Endpunkterkennung für die atzung von photomasken ATE498901T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86349006P 2006-10-30 2006-10-30
US11/844,868 US20080099436A1 (en) 2006-10-30 2007-08-24 Endpoint detection for photomask etching
US11/844,838 US20080099435A1 (en) 2006-10-30 2007-08-24 Endpoint detection for photomask etching
US96932807P 2007-08-31 2007-08-31

Publications (1)

Publication Number Publication Date
ATE498901T1 true ATE498901T1 (de) 2011-03-15

Family

ID=39279419

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07021045T ATE498901T1 (de) 2006-10-30 2007-10-26 Endpunkterkennung für die atzung von photomasken

Country Status (7)

Country Link
EP (2) EP1926125B1 (de)
JP (1) JP5441332B2 (de)
KR (1) KR100932574B1 (de)
CN (2) CN104614932A (de)
AT (1) ATE498901T1 (de)
DE (1) DE602007012503D1 (de)
TW (1) TWI388936B (de)

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US9347132B2 (en) * 2011-04-29 2016-05-24 Applied Materials, Inc. Optical endpoint detection system
JP2012253142A (ja) * 2011-06-01 2012-12-20 Shibaura Mechatronics Corp 基板の製造装置および基板の製造方法
US9887071B2 (en) * 2011-12-16 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone EPD detectors
US8900469B2 (en) * 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
TWI582837B (zh) * 2012-06-11 2017-05-11 應用材料股份有限公司 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定
CN103943447B (zh) * 2013-01-17 2017-02-08 中微半导体设备(上海)有限公司 一种等离子处理装置及其处理方法
CN103472542B (zh) * 2013-09-13 2016-01-20 河南仕佳光子科技有限公司 用于定位光纤阵列的梯形槽的制作方法
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
CN104733336B (zh) * 2013-12-19 2017-11-03 中微半导体设备(上海)有限公司 等离子体去胶工艺的终点检测系统和方法
CN103811291B (zh) 2013-12-20 2018-01-23 京东方科技集团股份有限公司 一种阵列基板制作方法、膜层刻蚀防损伤监控方法及设备
JP6329790B2 (ja) * 2014-03-25 2018-05-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
DE102014115708A1 (de) * 2014-10-29 2016-05-04 Aixtron Se Verfahren zum Trennen einer Kohlenstoffstruktur von einer Keimstruktur
TW201634219A (zh) * 2015-01-15 2016-10-01 Ｍｋｓ儀器公司 聚合物複合物真空組件
US9953886B2 (en) * 2015-08-21 2018-04-24 Microchip Technology Incorporated Single-wafer real-time etch rate and uniformity predictor for plasma etch processes
US9893058B2 (en) * 2015-09-17 2018-02-13 Semiconductor Components Industries, Llc Method of manufacturing a semiconductor device having reduced on-state resistance and structure
WO2017142523A1 (en) 2016-02-17 2017-08-24 Accustrata, Inc. System and method for monitoring atomic absorption during a surface modification process
US10184183B2 (en) * 2016-06-21 2019-01-22 Applied Materials, Inc. Substrate temperature monitoring
CN107546141B (zh) * 2016-06-28 2020-12-04 中微半导体设备(上海)股份有限公司 监测等离子体工艺制程的装置和方法
CN107546094B (zh) * 2016-06-28 2019-05-03 中微半导体设备(上海)股份有限公司 监测等离子体工艺制程的等离子体处理装置和方法
CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
CN107993946B (zh) * 2016-10-27 2020-11-20 中微半导体设备(上海)股份有限公司 宽带光谱光学测量装置及等离子体处理装置
JP6820717B2 (ja) * 2016-10-28 2021-01-27 株式会社日立ハイテク プラズマ処理装置
JP6808596B2 (ja) * 2017-03-10 2021-01-06 キオクシア株式会社 センシングシステム
US11022877B2 (en) * 2017-03-13 2021-06-01 Applied Materials, Inc. Etch processing system having reflective endpoint detection
KR101966806B1 (ko) * 2017-09-01 2019-04-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN108461412A (zh) * 2018-03-22 2018-08-28 北京北方华创微电子装备有限公司 在线监测系统及半导体加工设备
TWI659258B (zh) * 2018-05-23 2019-05-11 亞智科技股份有限公司 蝕刻時間偵測方法及蝕刻時間偵測系統
US10978278B2 (en) 2018-07-31 2021-04-13 Tokyo Electron Limited Normal-incident in-situ process monitor sensor
KR20200052487A (ko) * 2018-11-06 2020-05-15 삼성전자주식회사 반도체 소자의 제조 방법
CN113447243B (zh) * 2020-05-26 2023-03-10 重庆康佳光电技术研究院有限公司 一种终点检测装置、蚀刻设备以及检测方法
CN111975191B (zh) * 2020-08-17 2023-01-24 北京中科镭特电子有限公司 一种加工腔组件及激光加工装置
CN112078237B (zh) * 2020-08-25 2022-05-27 北京黎马敦太平洋包装有限公司 一种具有自动烫印质量检测装置的烫印系统
EP4341641A1 (de) * 2021-05-20 2024-03-27 Applied Materials, Inc. In-situ-filmstegsensoranordnung, vorrichtung und verfahren
CN115097570B (zh) * 2022-08-22 2023-04-07 上海羲禾科技有限公司 一种波导的刻蚀方法
CN117270317B (zh) * 2023-11-20 2024-02-09 深圳市龙图光罩股份有限公司 图形辅助的干法刻蚀装置及方法

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Also Published As

Publication number Publication date
EP1926125A1 (de) 2008-05-28
DE602007012503D1 (de) 2011-03-31
EP2309533A1 (de) 2011-04-13
TW200844667A (en) 2008-11-16
CN104614932A (zh) 2015-05-13
KR20080039251A (ko) 2008-05-07
TWI388936B (zh) 2013-03-11
JP2008112167A (ja) 2008-05-15
CN101174082A (zh) 2008-05-07
JP5441332B2 (ja) 2014-03-12
EP1926125B1 (de) 2011-02-16
KR100932574B1 (ko) 2009-12-17

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