ATE491226T1 - Verfahren zur übertragung einer schicht auf ein flüssiges material - Google Patents

Verfahren zur übertragung einer schicht auf ein flüssiges material

Info

Publication number
ATE491226T1
ATE491226T1 AT08786871T AT08786871T ATE491226T1 AT E491226 T1 ATE491226 T1 AT E491226T1 AT 08786871 T AT08786871 T AT 08786871T AT 08786871 T AT08786871 T AT 08786871T AT E491226 T1 ATE491226 T1 AT E491226T1
Authority
AT
Austria
Prior art keywords
layer
transferring
liquid material
support
onto
Prior art date
Application number
AT08786871T
Other languages
English (en)
Inventor
Damien Bordel
Cioccio Lea Di
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE491226T1 publication Critical patent/ATE491226T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Saccharide Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Decoration By Transfer Pictures (AREA)
AT08786871T 2007-08-07 2008-08-05 Verfahren zur übertragung einer schicht auf ein flüssiges material ATE491226T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0756983A FR2919958B1 (fr) 2007-08-07 2007-08-07 Procede de report d'une couche sur un materiau liquide
PCT/EP2008/060261 WO2009019265A2 (fr) 2007-08-07 2008-08-05 Procede de report d'une couche sur un materiau liquide

Publications (1)

Publication Number Publication Date
ATE491226T1 true ATE491226T1 (de) 2010-12-15

Family

ID=39092047

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08786871T ATE491226T1 (de) 2007-08-07 2008-08-05 Verfahren zur übertragung einer schicht auf ein flüssiges material

Country Status (7)

Country Link
US (1) US8039370B2 (de)
EP (1) EP2174346B1 (de)
JP (1) JP2010535651A (de)
AT (1) ATE491226T1 (de)
DE (1) DE602008003933D1 (de)
FR (1) FR2919958B1 (de)
WO (1) WO2009019265A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2960340B1 (fr) * 2010-05-21 2012-06-29 Commissariat Energie Atomique Procede de realisation d'un support de substrat
FR3041812A1 (fr) * 2015-09-30 2017-03-31 Commissariat Energie Atomique Procede de formation d’une portion semiconductrice par croissance epitaxiale sur une portion contrainte
FR3041811B1 (fr) * 2015-09-30 2017-10-27 Commissariat Energie Atomique Procede de realisation d’une structure semiconductrice comportant une portion contrainte
CN112599468B (zh) * 2020-12-31 2022-10-14 福建江夏学院 一种基于溶剂处理制备二硫化钼薄层及其薄膜晶体管的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0441270B1 (de) * 1990-02-07 1995-11-15 Harris Corporation Löten von Wafern unter Verwendung von eingeschlossenem oxydierendem Dampf
US6214733B1 (en) * 1999-11-17 2001-04-10 Elo Technologies, Inc. Process for lift off and handling of thin film materials
US6746777B1 (en) * 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
FR2895562B1 (fr) * 2005-12-27 2008-03-28 Commissariat Energie Atomique Procede de relaxation d'une couche mince contrainte

Also Published As

Publication number Publication date
FR2919958A1 (fr) 2009-02-13
WO2009019265A3 (fr) 2009-05-22
EP2174346B1 (de) 2010-12-08
JP2010535651A (ja) 2010-11-25
DE602008003933D1 (de) 2011-01-20
US8039370B2 (en) 2011-10-18
EP2174346A2 (de) 2010-04-14
WO2009019265A2 (fr) 2009-02-12
FR2919958B1 (fr) 2009-12-18
US20110177676A1 (en) 2011-07-21

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Legal Events

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