ATE488615T1 - Mikrowellenstrahler für eine elektron-zyklotron- resonanz-plasmaquelle - Google Patents

Mikrowellenstrahler für eine elektron-zyklotron- resonanz-plasmaquelle

Info

Publication number
ATE488615T1
ATE488615T1 AT97934029T AT97934029T ATE488615T1 AT E488615 T1 ATE488615 T1 AT E488615T1 AT 97934029 T AT97934029 T AT 97934029T AT 97934029 T AT97934029 T AT 97934029T AT E488615 T1 ATE488615 T1 AT E488615T1
Authority
AT
Austria
Prior art keywords
plasma
microwave power
electron cyclotron
chamber
microwave
Prior art date
Application number
AT97934029T
Other languages
English (en)
Inventor
Raphael Dandl
Original Assignee
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Int filed Critical Asm Int
Application granted granted Critical
Publication of ATE488615T1 publication Critical patent/ATE488615T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32211Means for coupling power to the plasma
    • H01J37/3222Antennas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32211Means for coupling power to the plasma
    • H01J37/32229Waveguides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • H01J37/32211Means for coupling power to the plasma
    • H01J37/32247Resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32678Electron cyclotron resonance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32688Multi-cusp fields

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Lasers (AREA)
  • Plasma Technology (AREA)
AT97934029T 1996-07-08 1997-07-01 Mikrowellenstrahler für eine elektron-zyklotron- resonanz-plasmaquelle ATE488615T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/676,448 US5707452A (en) 1996-07-08 1996-07-08 Coaxial microwave applicator for an electron cyclotron resonance plasma source
PCT/US1997/011381 WO1998001599A1 (en) 1996-07-08 1997-07-01 Microwave applicator for an electron cyclotron resonance plasma source

Publications (1)

Publication Number Publication Date
ATE488615T1 true ATE488615T1 (de) 2010-12-15

Family

ID=24714568

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97934029T ATE488615T1 (de) 1996-07-08 1997-07-01 Mikrowellenstrahler für eine elektron-zyklotron- resonanz-plasmaquelle

Country Status (6)

Country Link
US (1) US5707452A (de)
EP (1) EP0914496B1 (de)
JP (1) JP4671313B2 (de)
AT (1) ATE488615T1 (de)
DE (1) DE69740054D1 (de)
WO (1) WO1998001599A1 (de)

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WO1997020620A1 (en) * 1995-12-07 1997-06-12 The Regents Of The University Of California Improvements in method and apparatus for isotope enhancement in a plasma apparatus
JPH09266096A (ja) * 1996-03-28 1997-10-07 Hitachi Ltd プラズマ処理装置及びこれを用いたプラズマ処理方法
US5975014A (en) * 1996-07-08 1999-11-02 Asm Japan K.K. Coaxial resonant multi-port microwave applicator for an ECR plasma source
US6132632A (en) * 1997-09-11 2000-10-17 International Business Machines Corporation Method and apparatus for achieving etch rate uniformity in a reactive ion etcher
US6186090B1 (en) * 1999-03-04 2001-02-13 Energy Conversion Devices, Inc. Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
CN1251293C (zh) * 1999-11-15 2006-04-12 兰姆研究有限公司 用于加工系统的材料和气体化学组成
JP2001203099A (ja) 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
US7067034B2 (en) * 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
US6632322B1 (en) 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
US6541781B1 (en) * 2000-07-25 2003-04-01 Axcelis Technologies, Inc. Waveguide for microwave excitation of plasma in an ion beam guide
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
DE10044867A1 (de) 2000-09-12 2002-03-21 Rheinmetall W & M Gmbh Explosivstoffgetriebene RF-Strahlenquelle
JP4173679B2 (ja) * 2002-04-09 2008-10-29 エム・イー・エス・アフティ株式会社 Ecrプラズマ源およびecrプラズマ装置
US6905773B2 (en) * 2002-10-22 2005-06-14 Schlage Lock Company Corrosion-resistant coatings and methods of manufacturing the same
US20040227106A1 (en) * 2003-05-13 2004-11-18 Halling Alfred M. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
US7493869B1 (en) 2005-12-16 2009-02-24 The United States Of America As Represented By The Administration Of Nasa Very large area/volume microwave ECR plasma and ion source
US8165531B2 (en) * 2007-08-03 2012-04-24 Mcmaster University Electromagnetic wave-potential communication system
US20120326592A1 (en) * 2011-06-21 2012-12-27 Jozef Kudela Transmission Line RF Applicator for Plasma Chamber
NL2007968C2 (en) * 2011-12-14 2013-06-17 Draka Comteq Bv An apparatus for performing a plasma chemical vapour deposition process.
NL2017575B1 (en) 2016-10-04 2018-04-13 Draka Comteq Bv A method and an apparatus for performing a plasma chemical vapour deposition process and a method
GB2569812A (en) * 2017-12-27 2019-07-03 Creo Medical Ltd Electrosurgical ablation instrument
ES2696227B2 (es) * 2018-07-10 2019-06-12 Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat Fuente de iones interna para ciclotrones de baja erosion
CN114624256B (zh) * 2022-03-31 2023-07-25 核工业西南物理研究院 用于测量磁流体不稳定性模数的三维微波反射系统及方法

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JPS57176746A (en) * 1981-04-21 1982-10-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit and manufacture thereof
EP0106497B1 (de) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ionenflutgerät
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JPS59222922A (ja) * 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
US4534842A (en) * 1983-06-15 1985-08-13 Centre National De La Recherche Scientifique (Cnrs) Process and device for producing a homogeneous large-volume plasma of high density and of low electronic temperature
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JPH0614760Y2 (ja) * 1989-03-24 1994-04-20 株式会社トキメック 加温療法用マイクロ波放射器
US5370765A (en) * 1989-03-09 1994-12-06 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source and method of operation
US5133826A (en) * 1989-03-09 1992-07-28 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source
US5270616A (en) * 1989-09-25 1993-12-14 Ryohei Itatani Microwave plasma generating apparatus
FR2671931A1 (fr) * 1991-01-22 1992-07-24 Metal Process Dispositif de repartition d'une energie micro-onde pour l'excitation d'un plasma.
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US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
CA2146369C (en) * 1992-11-13 1999-06-15 Masatsugu Izu Microwave apparatus for depositing thin films
JP2972477B2 (ja) * 1993-01-27 1999-11-08 日本電気株式会社 Rf・ecrプラズマエッチング装置
US5483248A (en) * 1993-08-10 1996-01-09 Hughes Aircraft Company Continuous transverse stub element devices for flat plate antenna arrays
JP3171222B2 (ja) * 1994-06-14 2001-05-28 日本電気株式会社 マイクロ波プラズマ処理装置
JP3438109B2 (ja) * 1994-08-12 2003-08-18 富士通株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
DE69740054D1 (de) 2010-12-30
WO1998001599A1 (en) 1998-01-15
JP4671313B2 (ja) 2011-04-13
US5707452A (en) 1998-01-13
JP2000514595A (ja) 2000-10-31
EP0914496A4 (de) 2007-02-14
EP0914496A1 (de) 1999-05-12
EP0914496B1 (de) 2010-11-17

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