ATE488615T1 - Mikrowellenstrahler für eine elektron-zyklotron- resonanz-plasmaquelle - Google Patents
Mikrowellenstrahler für eine elektron-zyklotron- resonanz-plasmaquelleInfo
- Publication number
- ATE488615T1 ATE488615T1 AT97934029T AT97934029T ATE488615T1 AT E488615 T1 ATE488615 T1 AT E488615T1 AT 97934029 T AT97934029 T AT 97934029T AT 97934029 T AT97934029 T AT 97934029T AT E488615 T1 ATE488615 T1 AT E488615T1
- Authority
- AT
- Austria
- Prior art keywords
- plasma
- microwave power
- electron cyclotron
- chamber
- microwave
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Lasers (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/676,448 US5707452A (en) | 1996-07-08 | 1996-07-08 | Coaxial microwave applicator for an electron cyclotron resonance plasma source |
PCT/US1997/011381 WO1998001599A1 (en) | 1996-07-08 | 1997-07-01 | Microwave applicator for an electron cyclotron resonance plasma source |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE488615T1 true ATE488615T1 (de) | 2010-12-15 |
Family
ID=24714568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97934029T ATE488615T1 (de) | 1996-07-08 | 1997-07-01 | Mikrowellenstrahler für eine elektron-zyklotron- resonanz-plasmaquelle |
Country Status (6)
Country | Link |
---|---|
US (1) | US5707452A (de) |
EP (1) | EP0914496B1 (de) |
JP (1) | JP4671313B2 (de) |
AT (1) | ATE488615T1 (de) |
DE (1) | DE69740054D1 (de) |
WO (1) | WO1998001599A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997020620A1 (en) * | 1995-12-07 | 1997-06-12 | The Regents Of The University Of California | Improvements in method and apparatus for isotope enhancement in a plasma apparatus |
JPH09266096A (ja) * | 1996-03-28 | 1997-10-07 | Hitachi Ltd | プラズマ処理装置及びこれを用いたプラズマ処理方法 |
US5975014A (en) * | 1996-07-08 | 1999-11-02 | Asm Japan K.K. | Coaxial resonant multi-port microwave applicator for an ECR plasma source |
US6132632A (en) * | 1997-09-11 | 2000-10-17 | International Business Machines Corporation | Method and apparatus for achieving etch rate uniformity in a reactive ion etcher |
US6186090B1 (en) * | 1999-03-04 | 2001-02-13 | Energy Conversion Devices, Inc. | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
CN1251293C (zh) * | 1999-11-15 | 2006-04-12 | 兰姆研究有限公司 | 用于加工系统的材料和气体化学组成 |
JP2001203099A (ja) | 2000-01-20 | 2001-07-27 | Yac Co Ltd | プラズマ生成装置およびプラズマ処理装置 |
US7067034B2 (en) * | 2000-03-27 | 2006-06-27 | Lam Research Corporation | Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma |
US6632322B1 (en) | 2000-06-30 | 2003-10-14 | Lam Research Corporation | Switched uniformity control |
US6414329B1 (en) * | 2000-07-25 | 2002-07-02 | Axcelis Technologies, Inc. | Method and system for microwave excitation of plasma in an ion beam guide |
US6541781B1 (en) * | 2000-07-25 | 2003-04-01 | Axcelis Technologies, Inc. | Waveguide for microwave excitation of plasma in an ion beam guide |
US6703628B2 (en) | 2000-07-25 | 2004-03-09 | Axceliss Technologies, Inc | Method and system for ion beam containment in an ion beam guide |
DE10044867A1 (de) | 2000-09-12 | 2002-03-21 | Rheinmetall W & M Gmbh | Explosivstoffgetriebene RF-Strahlenquelle |
JP4173679B2 (ja) * | 2002-04-09 | 2008-10-29 | エム・イー・エス・アフティ株式会社 | Ecrプラズマ源およびecrプラズマ装置 |
US6905773B2 (en) * | 2002-10-22 | 2005-06-14 | Schlage Lock Company | Corrosion-resistant coatings and methods of manufacturing the same |
US20040227106A1 (en) * | 2003-05-13 | 2004-11-18 | Halling Alfred M. | System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway |
US6891174B2 (en) * | 2003-07-31 | 2005-05-10 | Axcelis Technologies, Inc. | Method and system for ion beam containment using photoelectrons in an ion beam guide |
US7493869B1 (en) | 2005-12-16 | 2009-02-24 | The United States Of America As Represented By The Administration Of Nasa | Very large area/volume microwave ECR plasma and ion source |
US8165531B2 (en) * | 2007-08-03 | 2012-04-24 | Mcmaster University | Electromagnetic wave-potential communication system |
US20120326592A1 (en) * | 2011-06-21 | 2012-12-27 | Jozef Kudela | Transmission Line RF Applicator for Plasma Chamber |
NL2007968C2 (en) * | 2011-12-14 | 2013-06-17 | Draka Comteq Bv | An apparatus for performing a plasma chemical vapour deposition process. |
NL2017575B1 (en) | 2016-10-04 | 2018-04-13 | Draka Comteq Bv | A method and an apparatus for performing a plasma chemical vapour deposition process and a method |
GB2569812A (en) * | 2017-12-27 | 2019-07-03 | Creo Medical Ltd | Electrosurgical ablation instrument |
ES2696227B2 (es) * | 2018-07-10 | 2019-06-12 | Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat | Fuente de iones interna para ciclotrones de baja erosion |
CN114624256B (zh) * | 2022-03-31 | 2023-07-25 | 核工业西南物理研究院 | 用于测量磁流体不稳定性模数的三维微波反射系统及方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
US4564997A (en) * | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
JPS57176746A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit and manufacture thereof |
EP0106497B1 (de) * | 1982-09-10 | 1988-06-01 | Nippon Telegraph And Telephone Corporation | Ionenflutgerät |
DE3378508D1 (en) * | 1982-09-10 | 1988-12-22 | Nippon Telegraph & Telephone | Plasma deposition method and apparatus |
JPS59222922A (ja) * | 1983-06-01 | 1984-12-14 | Nippon Telegr & Teleph Corp <Ntt> | 気相成長装置 |
US4534842A (en) * | 1983-06-15 | 1985-08-13 | Centre National De La Recherche Scientifique (Cnrs) | Process and device for producing a homogeneous large-volume plasma of high density and of low electronic temperature |
FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
JPH0614760Y2 (ja) * | 1989-03-24 | 1994-04-20 | 株式会社トキメック | 加温療法用マイクロ波放射器 |
US5370765A (en) * | 1989-03-09 | 1994-12-06 | Applied Microwave Plasma Concepts, Inc. | Electron cyclotron resonance plasma source and method of operation |
US5133826A (en) * | 1989-03-09 | 1992-07-28 | Applied Microwave Plasma Concepts, Inc. | Electron cyclotron resonance plasma source |
US5270616A (en) * | 1989-09-25 | 1993-12-14 | Ryohei Itatani | Microwave plasma generating apparatus |
FR2671931A1 (fr) * | 1991-01-22 | 1992-07-24 | Metal Process | Dispositif de repartition d'une energie micro-onde pour l'excitation d'un plasma. |
EP0537950B1 (de) * | 1991-10-17 | 1997-04-02 | Applied Materials, Inc. | Plasmareaktor |
US5292370A (en) * | 1992-08-14 | 1994-03-08 | Martin Marietta Energy Systems, Inc. | Coupled microwave ECR and radio-frequency plasma source for plasma processing |
CA2146369C (en) * | 1992-11-13 | 1999-06-15 | Masatsugu Izu | Microwave apparatus for depositing thin films |
JP2972477B2 (ja) * | 1993-01-27 | 1999-11-08 | 日本電気株式会社 | Rf・ecrプラズマエッチング装置 |
US5483248A (en) * | 1993-08-10 | 1996-01-09 | Hughes Aircraft Company | Continuous transverse stub element devices for flat plate antenna arrays |
JP3171222B2 (ja) * | 1994-06-14 | 2001-05-28 | 日本電気株式会社 | マイクロ波プラズマ処理装置 |
JP3438109B2 (ja) * | 1994-08-12 | 2003-08-18 | 富士通株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
1996
- 1996-07-08 US US08/676,448 patent/US5707452A/en not_active Expired - Lifetime
-
1997
- 1997-07-01 EP EP97934029A patent/EP0914496B1/de not_active Expired - Lifetime
- 1997-07-01 WO PCT/US1997/011381 patent/WO1998001599A1/en active Application Filing
- 1997-07-01 JP JP50525698A patent/JP4671313B2/ja not_active Expired - Lifetime
- 1997-07-01 AT AT97934029T patent/ATE488615T1/de not_active IP Right Cessation
- 1997-07-01 DE DE69740054T patent/DE69740054D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69740054D1 (de) | 2010-12-30 |
WO1998001599A1 (en) | 1998-01-15 |
JP4671313B2 (ja) | 2011-04-13 |
US5707452A (en) | 1998-01-13 |
JP2000514595A (ja) | 2000-10-31 |
EP0914496A4 (de) | 2007-02-14 |
EP0914496A1 (de) | 1999-05-12 |
EP0914496B1 (de) | 2010-11-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |