ATE486278T1 - Fet-transistornetzwerk auf basis von halbleitenden nanoröhrchen oder nanodrähten und entsprechende elektronische vorrichtung zum nachweis von analyten - Google Patents

Fet-transistornetzwerk auf basis von halbleitenden nanoröhrchen oder nanodrähten und entsprechende elektronische vorrichtung zum nachweis von analyten

Info

Publication number
ATE486278T1
ATE486278T1 AT06755303T AT06755303T ATE486278T1 AT E486278 T1 ATE486278 T1 AT E486278T1 AT 06755303 T AT06755303 T AT 06755303T AT 06755303 T AT06755303 T AT 06755303T AT E486278 T1 ATE486278 T1 AT E486278T1
Authority
AT
Austria
Prior art keywords
nanowires
electronic device
detecting analytes
network based
corresponding electronic
Prior art date
Application number
AT06755303T
Other languages
English (en)
Inventor
Paolo Bondavalli
Pierre Legagneux
Barny Pierre Le
Didier Pribat
Julien Nagle
Original Assignee
Thales Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales Sa filed Critical Thales Sa
Application granted granted Critical
Publication of ATE486278T1 publication Critical patent/ATE486278T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/904—Specified use of nanostructure for medical, immunological, body treatment, or diagnosis
    • Y10S977/92—Detection of biochemical
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/957—Of chemical property or presence

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
AT06755303T 2005-05-31 2006-05-24 Fet-transistornetzwerk auf basis von halbleitenden nanoröhrchen oder nanodrähten und entsprechende elektronische vorrichtung zum nachweis von analyten ATE486278T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0505492A FR2886459B1 (fr) 2005-05-31 2005-05-31 Reseau de transistors fet a nanotube ou nanofil semi-conducteur et dispositif electronique correspondant, pour la detection d'analytes
PCT/EP2006/062615 WO2006128828A1 (fr) 2005-05-31 2006-05-24 Reseau de transistors fet a nanotube ou nanofil semi-conducteur et dispositif electronique correspondant, pour la detection d'analytes

Publications (1)

Publication Number Publication Date
ATE486278T1 true ATE486278T1 (de) 2010-11-15

Family

ID=35705229

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06755303T ATE486278T1 (de) 2005-05-31 2006-05-24 Fet-transistornetzwerk auf basis von halbleitenden nanoröhrchen oder nanodrähten und entsprechende elektronische vorrichtung zum nachweis von analyten

Country Status (6)

Country Link
US (1) US8115198B2 (de)
EP (1) EP1889044B1 (de)
AT (1) ATE486278T1 (de)
DE (1) DE602006017834D1 (de)
FR (1) FR2886459B1 (de)
WO (1) WO2006128828A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7846786B2 (en) * 2006-12-05 2010-12-07 Korea University Industrial & Academic Collaboration Foundation Method of fabricating nano-wire array
DE102007034331A1 (de) * 2007-07-24 2009-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Detektierung von Substanzen
KR101042012B1 (ko) 2008-06-13 2011-06-17 고려대학교 산학협력단 채널막을 포함하는 소자 제조 방법 및 그를 이용하여 제조된 센서 소자
DE102008042859A1 (de) * 2008-10-15 2010-04-22 Robert Bosch Gmbh Elektronisches Bauelement
US20100204062A1 (en) * 2008-11-07 2010-08-12 University Of Southern California Calibration methods for multiplexed sensor arrays
WO2011017077A2 (en) * 2009-07-27 2011-02-10 Trustees Of Boston University Nanochannel-based sensor system with controlled sensitivity
US20120199812A1 (en) * 2009-10-07 2012-08-09 University Of Florida Research Foundation, Incorporated Strain tunable silicon and germanium nanowire optoelectronic devices
FR2988842B1 (fr) 2012-03-29 2015-01-16 Ecole Polytech Detecteur d'analytes utilisant un inverseur logique realise a partir de deux transistors a nanotubes/nanofils/graphene, et procede de detection associe.
US9423375B2 (en) * 2012-10-16 2016-08-23 Koninklijke Philips N.V. Integrated circuit with nanowire sensors comprising a shielding layer, sensing apparatus, measuring method and manufacturing method
JP6353454B2 (ja) * 2012-10-16 2018-07-04 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 感知トランジスタアレイを備えた集積回路、感知装置及び測定方法
EP2735868B1 (de) * 2012-11-26 2015-11-25 University College Cork Nanodraht-Elektrodensensor
US9379182B1 (en) * 2015-02-03 2016-06-28 United Microelectronics Corp. Method for forming nanowire and semiconductor device formed with the nanowire
TWI579559B (zh) * 2015-10-30 2017-04-21 財團法人工業技術研究院 感測元件及其製造方法
FR3046243B1 (fr) * 2015-12-24 2017-12-22 Commissariat Energie Atomique Capteur nw-fet comportant au moins deux detecteurs distincts a nanofil de semi-conducteur
CN106404840A (zh) * 2016-08-24 2017-02-15 北京大学 一种实现纳米线生物传感器表面修饰的方法
JP2019190829A (ja) * 2016-08-31 2019-10-31 シャープ株式会社 ナノファイバーセンサ
GB2561246A (en) * 2017-04-07 2018-10-10 Sumitomo Chemical Co Gas Sensor system and method
CN106991956A (zh) * 2017-06-05 2017-07-28 京东方科技集团股份有限公司 一种像素电路及其驱动方法和其制备方法、显示装置
CN111670486B (zh) 2018-01-29 2024-08-09 麻省理工学院 背栅场效应晶体管及其制造方法
US11561195B2 (en) 2018-06-08 2023-01-24 Massachusetts Institute Of Technology Monolithic 3D integrated circuit for gas sensing and method of making and system using
CN113544688B (zh) 2018-09-10 2022-08-26 麻省理工学院 用于设计集成电路的系统和方法
WO2020068812A1 (en) 2018-09-24 2020-04-02 Massachusetts Institute Of Technology Tunable doping of carbon nanotubes through engineered atomic layer deposition
US11813057B2 (en) * 2018-11-29 2023-11-14 University Of Southern California Wearable biosensors and applications thereof
WO2020113205A1 (en) 2018-11-30 2020-06-04 Massachusetts Institute Of Technology Rinse - removal of incubated nanotubes through selective exfoliation
US11579114B2 (en) 2019-01-31 2023-02-14 Femtodx, Inc. Four point semiconductor nanowire-based sensors and related methods
US20230273150A1 (en) * 2022-02-25 2023-08-31 Cardea Bio, Inc. Integrated circuit chip with 2d field-effect transistors and on-chip thin film layer deposition with electrical characterization
FR3152916A1 (fr) * 2023-09-12 2025-03-14 Institut Polytechnique De Grenoble Transistor à effet de champ à jonction et procédé de fabrication associé

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US8029734B2 (en) 2001-03-29 2011-10-04 The Board Of Trustees Of The Leland Stanford Junior University Noncovalent sidewall functionalization of carbon nanotubes
FR2829873B1 (fr) 2001-09-20 2006-09-01 Thales Sa Procede de croissance localisee de nanotubes et procede de fabrication de cathode autoalignee utilisant le procede de croissance de nanotubes
FR2832995B1 (fr) 2001-12-04 2004-02-27 Thales Sa Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi
US7186380B2 (en) * 2002-07-01 2007-03-06 Hewlett-Packard Development Company, L.P. Transistor and sensors made from molecular materials with electric dipoles
EP1623203A4 (de) * 2003-05-14 2010-11-24 Nantero Inc Sensorplattform mit einem nicht horizontal ausgerichteten nanoröhrchenelement
DE10331299A1 (de) * 2003-07-10 2005-02-03 Infineon Technologies Ag Sensor-Transistor-Element, Sensor-Einheit und Sensor-Array
GB0326049D0 (en) * 2003-11-07 2003-12-10 Qinetiq Ltd Fluid analysis apparatus

Also Published As

Publication number Publication date
US20080210987A1 (en) 2008-09-04
FR2886459A1 (fr) 2006-12-01
EP1889044B1 (de) 2010-10-27
FR2886459B1 (fr) 2007-08-24
US8115198B2 (en) 2012-02-14
WO2006128828A1 (fr) 2006-12-07
EP1889044A1 (de) 2008-02-20
DE602006017834D1 (de) 2010-12-09

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