ATE477258T1 - Kupfer (i) vorläufer für die chemische dampfphasenabscheidung von metallischem kupfer - Google Patents
Kupfer (i) vorläufer für die chemische dampfphasenabscheidung von metallischem kupferInfo
- Publication number
- ATE477258T1 ATE477258T1 AT98914918T AT98914918T ATE477258T1 AT E477258 T1 ATE477258 T1 AT E477258T1 AT 98914918 T AT98914918 T AT 98914918T AT 98914918 T AT98914918 T AT 98914918T AT E477258 T1 ATE477258 T1 AT E477258T1
- Authority
- AT
- Austria
- Prior art keywords
- copper
- pct
- precursor
- vapor deposition
- chemical vapor
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052802 copper Inorganic materials 0.000 title abstract 3
- 239000010949 copper Substances 0.000 title abstract 3
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 title abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
- 150000001345 alkine derivatives Chemical class 0.000 abstract 2
- 239000003446 ligand Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Catalysts (AREA)
- High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9703029A FR2760743B1 (fr) | 1997-03-13 | 1997-03-13 | Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique |
| PCT/FR1998/000518 WO1998040387A1 (fr) | 1997-03-13 | 1998-03-13 | Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE477258T1 true ATE477258T1 (de) | 2010-08-15 |
Family
ID=9504731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98914918T ATE477258T1 (de) | 1997-03-13 | 1998-03-13 | Kupfer (i) vorläufer für die chemische dampfphasenabscheidung von metallischem kupfer |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6130345A (de) |
| EP (1) | EP0966474B1 (de) |
| JP (1) | JP4388604B2 (de) |
| KR (1) | KR100542913B1 (de) |
| AT (1) | ATE477258T1 (de) |
| AU (1) | AU743343B2 (de) |
| CA (1) | CA2283160C (de) |
| DE (1) | DE69841824D1 (de) |
| FR (1) | FR2760743B1 (de) |
| TW (1) | TW514671B (de) |
| WO (1) | WO1998040387A1 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002530520A (ja) * | 1998-08-03 | 2002-09-17 | アドバンスド．テクノロジー．マテリアルズ．インコーポレイテッド | ミクロ電子工学素子構造体の製造のための銅前駆組成物及びその形成プロセス |
| JP2002128787A (ja) * | 1999-12-15 | 2002-05-09 | Mitsubishi Materials Corp | 有機銅化合物及び該化合物を含む混合液並びにそれを用いて作製された銅薄膜 |
| US6596344B2 (en) * | 2001-03-27 | 2003-07-22 | Sharp Laboratories Of America, Inc. | Method of depositing a high-adhesive copper thin film on a metal nitride substrate |
| US6534666B1 (en) * | 2001-12-27 | 2003-03-18 | Air Products And Chemicals, Inc. | Use of water and acidic water to purify liquid MOCVD precursors |
| FR2839982B1 (fr) | 2002-05-22 | 2005-04-15 | Centre Nat Rech Scient | Composition de precurseur pour le depot de cuivre sur un support |
| AU2003251955A1 (en) * | 2002-07-16 | 2004-02-02 | Sonus Pharmaceuticals, Inc. | Platinum compound |
| FR2845088B1 (fr) * | 2002-09-30 | 2004-12-03 | Centre Nat Rech Scient | Nouveaux complexes metalliques exempts de fluor pour le depot chimique de metaux en phase gazeuse |
| DE10319454A1 (de) * | 2003-04-29 | 2004-11-18 | Merck Patent Gmbh | Dikupfer(I)oxalat-Komplexe als Precursor zur metallischen Kupferabscheidung |
| US6838573B1 (en) * | 2004-01-30 | 2005-01-04 | Air Products And Chemicals, Inc. | Copper CVD precursors with enhanced adhesion properties |
| CA2560059A1 (en) * | 2004-03-15 | 2005-09-29 | Sonus Pharmaceuticals, Inc. | Platinum carboxylate anticancer compounds |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1178290A (en) * | 1981-07-13 | 1984-11-20 | Gerald Doyle | Copper or silver complexes with fluorinated diketonates and unsaturated hydrocarbons |
| US5096737A (en) | 1990-10-24 | 1992-03-17 | International Business Machines Corporation | Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films |
| US5098516A (en) | 1990-12-31 | 1992-03-24 | Air Products And Chemicals, Inc. | Processes for the chemical vapor deposition of copper and etching of copper |
| US5085731A (en) | 1991-02-04 | 1992-02-04 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
| US5144049A (en) | 1991-02-04 | 1992-09-01 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
| US5187300A (en) | 1991-02-04 | 1993-02-16 | Air Products And Chemicals, Inc. | Volatile precursors for copper CVD |
| JP2622671B2 (ja) * | 1995-03-07 | 1997-06-18 | 株式会社トリケミカル研究所 | 銅のβ−ジケトネート錯体の製造方法 |
-
1997
- 1997-03-13 FR FR9703029A patent/FR2760743B1/fr not_active Expired - Lifetime
-
1998
- 1998-03-13 KR KR1019997008339A patent/KR100542913B1/ko not_active Expired - Fee Related
- 1998-03-13 CA CA002283160A patent/CA2283160C/fr not_active Expired - Lifetime
- 1998-03-13 EP EP98914918A patent/EP0966474B1/de not_active Expired - Lifetime
- 1998-03-13 WO PCT/FR1998/000518 patent/WO1998040387A1/fr not_active Ceased
- 1998-03-13 DE DE69841824T patent/DE69841824D1/de not_active Expired - Lifetime
- 1998-03-13 US US09/380,948 patent/US6130345A/en not_active Expired - Lifetime
- 1998-03-13 AT AT98914918T patent/ATE477258T1/de active
- 1998-03-13 AU AU69233/98A patent/AU743343B2/en not_active Expired
- 1998-03-13 JP JP53931198A patent/JP4388604B2/ja not_active Expired - Fee Related
- 1998-03-16 TW TW087103811A patent/TW514671B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP4388604B2 (ja) | 2009-12-24 |
| KR100542913B1 (ko) | 2006-01-11 |
| EP0966474B1 (de) | 2010-08-11 |
| EP0966474A1 (de) | 1999-12-29 |
| JP2001514644A (ja) | 2001-09-11 |
| US6130345A (en) | 2000-10-10 |
| AU743343B2 (en) | 2002-01-24 |
| TW514671B (en) | 2002-12-21 |
| CA2283160C (fr) | 2009-11-03 |
| WO1998040387A1 (fr) | 1998-09-17 |
| FR2760743A1 (fr) | 1998-09-18 |
| CA2283160A1 (fr) | 1998-09-17 |
| FR2760743B1 (fr) | 1999-07-23 |
| DE69841824D1 (de) | 2010-09-23 |
| AU6923398A (en) | 1998-09-29 |
| KR20000076244A (ko) | 2000-12-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
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