ATE470886T1 - Damaszen-fotomaske für die extrem-ultraviolett- lithographie (euvl) und herstellungsverfahren - Google Patents

Damaszen-fotomaske für die extrem-ultraviolett- lithographie (euvl) und herstellungsverfahren

Info

Publication number
ATE470886T1
ATE470886T1 AT02742415T AT02742415T ATE470886T1 AT E470886 T1 ATE470886 T1 AT E470886T1 AT 02742415 T AT02742415 T AT 02742415T AT 02742415 T AT02742415 T AT 02742415T AT E470886 T1 ATE470886 T1 AT E470886T1
Authority
AT
Austria
Prior art keywords
euvl
extreme ultraviolet
damascen
ultraviolet lithography
production process
Prior art date
Application number
AT02742415T
Other languages
English (en)
Inventor
Pei-Yang Yan
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE470886T1 publication Critical patent/ATE470886T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
AT02742415T 2001-07-31 2002-07-11 Damaszen-fotomaske für die extrem-ultraviolett- lithographie (euvl) und herstellungsverfahren ATE470886T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/919,680 US6593041B2 (en) 2001-07-31 2001-07-31 Damascene extreme ultraviolet lithography (EUVL) photomask and method of making
PCT/US2002/022104 WO2003012546A2 (en) 2001-07-31 2002-07-11 Damascene extreme ultraviolet lithography (euvl) photomask and method of making

Publications (1)

Publication Number Publication Date
ATE470886T1 true ATE470886T1 (de) 2010-06-15

Family

ID=25442465

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02742415T ATE470886T1 (de) 2001-07-31 2002-07-11 Damaszen-fotomaske für die extrem-ultraviolett- lithographie (euvl) und herstellungsverfahren

Country Status (8)

Country Link
US (1) US6593041B2 (de)
EP (1) EP1412817B1 (de)
CN (1) CN1695093A (de)
AT (1) ATE470886T1 (de)
AU (1) AU2002315549A1 (de)
DE (1) DE60236663D1 (de)
TW (1) TWI289725B (de)
WO (1) WO2003012546A2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
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US6577442B2 (en) * 2001-09-27 2003-06-10 Intel Corporation Reflective spectral filtering of high power extreme ultra-violet radiation
US20040131947A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Reflective mask structure and method of formation
US7420653B2 (en) * 2003-10-02 2008-09-02 Asml Netherlands B.V. Lithographic projection apparatus, mirror, method of supplying a protective cap layer, device manufacturing method and device manufactured accordingly
FR2863772B1 (fr) * 2003-12-16 2006-05-26 Commissariat Energie Atomique Procede de reparation d'erreurs de motifs realises dans des couches minces
US7169514B2 (en) * 2003-12-31 2007-01-30 Intel Corporation Extreme ultraviolet mask with molybdenum phase shifter
KR100604938B1 (ko) * 2005-05-27 2006-07-28 삼성전자주식회사 극자외선 노광용 반사마스크 및 그 제조방법
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
US7402469B1 (en) * 2007-01-12 2008-07-22 Applied Micro Circuits Corporation System and method for selectivity etching an integrated circuit
US8361689B2 (en) * 2007-11-05 2013-01-29 Eastman Kodak Company Negative charge control agents and their preparation
US7930657B2 (en) * 2008-01-23 2011-04-19 Micron Technology, Inc. Methods of forming photomasks
KR101358483B1 (ko) * 2009-04-02 2014-03-07 도판 인사츠 가부시키가이샤 반사형 포토마스크 및 반사형 포토마스크 블랭크
TWI467318B (zh) 2009-12-04 2015-01-01 Asahi Glass Co Ltd An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm
EP2511943A4 (de) 2009-12-09 2015-09-09 Asahi Glass Co Ltd Optisches element zur verwendung in der euv-lithographie
EP2511944A4 (de) 2009-12-09 2014-09-03 Asahi Glass Co Ltd Mit einer reflektierenden schicht ausgestattetes substrat für die euv-lithographie, reflektierender maskenrohling für die euv-lithographie, reflektierende maske für die euv-lithographie und verfahren zur herstellung des mit einer reflektierenden schicht ausgestatteten substrats
US8764995B2 (en) 2010-08-17 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
JP5691677B2 (ja) * 2011-03-10 2015-04-01 凸版印刷株式会社 反射型フォトマスクの位相欠陥修正方法
US8492054B2 (en) 2011-03-25 2013-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for patterning fine features
NL2010025A (en) 2012-01-17 2013-07-18 Asml Netherlands Bv Lithographic mask, lithographic apparatus and method.
WO2013156328A2 (en) * 2012-04-18 2013-10-24 Asml Netherlands B.V. Mask for lithographic apparatus and methods of inspection
US8658333B2 (en) * 2012-06-04 2014-02-25 Nanya Technology Corporation Reflective mask
JP2014096483A (ja) * 2012-11-09 2014-05-22 Toppan Printing Co Ltd 反射型マスクおよびその製造方法
US9069253B2 (en) * 2013-03-13 2015-06-30 Nanya Technology Corportion Mask structure
US9310675B2 (en) 2013-03-15 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
DE102013108872B4 (de) 2013-03-15 2018-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Fotomasken für extrem ultraviolettes Licht (EUV) sowie Herstellungsverfahren dieser
US9575412B2 (en) 2014-03-31 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing pole imbalance by adjusting exposure intensity
CN105093817A (zh) * 2014-05-23 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种光掩模图案的修复方法
DE102014216458A1 (de) * 2014-08-19 2016-02-25 Carl Zeiss Smt Gmbh Optisches Element mit einer Beschichtung zur Beeinflussung von Heizstrahlung und optische Anordnung
KR102246876B1 (ko) 2014-10-22 2021-04-30 삼성전자 주식회사 극자외선 리소그래피 장치용 반사형 마스크 및 그 제조방법
US9551924B2 (en) * 2015-02-12 2017-01-24 International Business Machines Corporation Structure and method for fixing phase effects on EUV mask
KR102520797B1 (ko) 2015-10-15 2023-04-12 삼성전자주식회사 반사형 포토마스크 및 그 제조 방법
KR102501192B1 (ko) 2016-04-25 2023-02-21 에이에스엠엘 네델란즈 비.브이. Euv 리소그래피를 위한 멤브레인
EP3454120B1 (de) * 2017-09-09 2024-05-01 IMEC vzw Verfahren zur herstelling von euv retikeln und retikel für euv-lithographie
US11143951B2 (en) * 2018-04-30 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Pellicle for an EUV lithography mask and a method of manufacturing thereof
SG11202103911SA (en) * 2018-10-17 2021-05-28 Astrileux Corp Photomask having reflective layer with non-reflective regions
US11171044B1 (en) 2020-05-08 2021-11-09 International Business Machines Corporation Planarization controllability for interconnect structures
US11815804B2 (en) * 2021-04-22 2023-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV mask blank and method of making EUV mask blank
US20230032950A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Euv photo masks and manufacturing method thereof
DE102022208658A1 (de) * 2022-08-22 2024-02-22 Carl Zeiss Smt Gmbh Zwischenprodukt zur Herstellung eines optischen Elements für eine Projektionsbelichtungsanlage, optisches Element für eine Projektionsbelichtungsanlage, Verfahren zur Herstellung eines Zwischenprodukts und Verfahren zur Herstellung eines optischen Elements

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935733A (en) * 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
US5928817A (en) * 1997-12-22 1999-07-27 Intel Corporation Method of protecting an EUV mask from damage and contamination
US5935737A (en) * 1997-12-22 1999-08-10 Intel Corporation Method for eliminating final euv mask repairs in the reflector region
US5958629A (en) * 1997-12-22 1999-09-28 Intel Corporation Using thin films as etch stop in EUV mask fabrication process
FR2797060B1 (fr) * 1999-07-29 2001-09-14 Commissariat Energie Atomique Structure pour masque de lithographie en reflexion et procede pour sa realisation

Also Published As

Publication number Publication date
WO2003012546A3 (en) 2003-12-18
CN1695093A (zh) 2005-11-09
DE60236663D1 (de) 2010-07-22
TWI289725B (en) 2007-11-11
WO2003012546A2 (en) 2003-02-13
US20030027053A1 (en) 2003-02-06
US6593041B2 (en) 2003-07-15
EP1412817B1 (de) 2010-06-09
AU2002315549A1 (en) 2003-02-17
EP1412817A2 (de) 2004-04-28

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