ATE459101T1 - Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis - Google Patents

Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis

Info

Publication number
ATE459101T1
ATE459101T1 AT05773837T AT05773837T ATE459101T1 AT E459101 T1 ATE459101 T1 AT E459101T1 AT 05773837 T AT05773837 T AT 05773837T AT 05773837 T AT05773837 T AT 05773837T AT E459101 T1 ATE459101 T1 AT E459101T1
Authority
AT
Austria
Prior art keywords
semiconductor circuit
base
thin semiconductor
separating
support substrate
Prior art date
Application number
AT05773837T
Other languages
English (en)
Inventor
Andreas Gakis
Wolfgang Schnitt
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE459101T1 publication Critical patent/ATE459101T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT05773837T 2004-08-20 2005-08-09 Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis ATE459101T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04104002 2004-08-20
PCT/IB2005/052635 WO2006018787A2 (en) 2004-08-20 2005-08-09 Method of detaching a thin semiconductor circuit from its base

Publications (1)

Publication Number Publication Date
ATE459101T1 true ATE459101T1 (de) 2010-03-15

Family

ID=35559365

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05773837T ATE459101T1 (de) 2004-08-20 2005-08-09 Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis

Country Status (7)

Country Link
US (1) US8338228B2 (de)
EP (1) EP1782462B1 (de)
JP (1) JP2008511051A (de)
CN (1) CN101044610A (de)
AT (1) ATE459101T1 (de)
DE (1) DE602005019581D1 (de)
WO (1) WO2006018787A2 (de)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116085B2 (ja) 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
US6036809A (en) 1999-02-16 2000-03-14 International Business Machines Corporation Process for releasing a thin-film structure from a substrate
JP2001185519A (ja) * 1999-12-24 2001-07-06 Hitachi Ltd 半導体装置及びその製造方法
US6444560B1 (en) * 2000-09-26 2002-09-03 International Business Machines Corporation Process for making fine pitch connections between devices and structure made by the process
US6946314B2 (en) * 2001-01-02 2005-09-20 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
US6797537B2 (en) 2001-10-30 2004-09-28 Irvine Sensors Corporation Method of making stackable layers containing encapsulated integrated circuit chips with one or more overlaying interconnect layers
TWI229435B (en) 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device
JP4575782B2 (ja) * 2002-12-20 2010-11-04 インターナショナル・ビジネス・マシーンズ・コーポレーション 3次元デバイスの製造方法

Also Published As

Publication number Publication date
US8338228B2 (en) 2012-12-25
WO2006018787A3 (en) 2006-08-17
DE602005019581D1 (de) 2010-04-08
WO2006018787A2 (en) 2006-02-23
EP1782462A2 (de) 2007-05-09
JP2008511051A (ja) 2008-04-10
CN101044610A (zh) 2007-09-26
US20090215226A1 (en) 2009-08-27
EP1782462B1 (de) 2010-02-24

Similar Documents

Publication Publication Date Title
ATE473489T1 (de) Duales chipkartensystem
TW200742249A (en) Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
TW200731503A (en) Stacked semiconductor structure and fabrication method thereof
ATE377843T1 (de) Multichip-schaltungsmodul und verfahren zur herstellung hierzu
ATE511703T1 (de) Herstellungsverfahren für durchkontakte
WO2004112128A3 (en) Low profile stacking system and method
TW200636966A (en) Method and system for fabricating semiconductor components with through wire interconnects
TW200608498A (en) Semiconductor device and manufacturing method thereof
TW200605253A (en) Method of manufacturing semiconductor integrated circuit and probe card
EP1681717A4 (de) Elektronische einrichtung und prozess zu ihrer herstellung
WO2002056652A3 (de) Verfahren zur herstellung einer elektronischen baugruppe
TW200627562A (en) Chip electrical connection structure and fabrication method thereof
DE59704976D1 (de) Trägerelement für einen halbleiterchip
TW200721432A (en) Semiconductor device, fabrication method therefor, and film fabrication method
SG162682A1 (en) Manufacturing method for semiconductor devices
TW200634915A (en) Manufacturing method of semiconductor device, semiconductor device, circuit board, electro-optic device, and electronic apparatus
TW200729371A (en) Semiconductor device and manufacturing method of the same, camera module
WO2005112113A3 (en) Mounting with auxiliary bumps
TW200520116A (en) Electric circuit board
TW200640315A (en) Electrically connecting structure of circuit board and method for fabricating same
EP1388890A4 (de) Verfahren zur herstellung einer elektronischen komponente
TW200731433A (en) Semiconductor device and manufacturing method for the same
DE602005019581D1 (de) Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis
ATE434264T1 (de) Verfahren zum zusammenbau einer doppelseitigen schaltungskomponente
SG108319A1 (en) Method for connecting an integrated circuit to a substrate and corresponding circuit arrangement

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties