ATE459101T1 - Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis - Google Patents

Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis

Info

Publication number
ATE459101T1
ATE459101T1 AT05773837T AT05773837T ATE459101T1 AT E459101 T1 ATE459101 T1 AT E459101T1 AT 05773837 T AT05773837 T AT 05773837T AT 05773837 T AT05773837 T AT 05773837T AT E459101 T1 ATE459101 T1 AT E459101T1
Authority
AT
Austria
Prior art keywords
semiconductor circuit
base
thin semiconductor
separating
support substrate
Prior art date
Application number
AT05773837T
Other languages
English (en)
Inventor
Andreas Gakis
Wolfgang Schnitt
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE459101T1 publication Critical patent/ATE459101T1/de

Links

Classifications

    • H10P72/74—
    • H10P72/743—

Landscapes

  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT05773837T 2004-08-20 2005-08-09 Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis ATE459101T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04104002 2004-08-20
PCT/IB2005/052635 WO2006018787A2 (en) 2004-08-20 2005-08-09 Method of detaching a thin semiconductor circuit from its base

Publications (1)

Publication Number Publication Date
ATE459101T1 true ATE459101T1 (de) 2010-03-15

Family

ID=35559365

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05773837T ATE459101T1 (de) 2004-08-20 2005-08-09 Verfahren zum ablösen einer dünnen halbleiterschaltung von ihrer basis

Country Status (7)

Country Link
US (1) US8338228B2 (de)
EP (1) EP1782462B1 (de)
JP (1) JP2008511051A (de)
CN (1) CN101044610A (de)
AT (1) ATE459101T1 (de)
DE (1) DE602005019581D1 (de)
WO (1) WO2006018787A2 (de)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116085B2 (ja) 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
US6036809A (en) 1999-02-16 2000-03-14 International Business Machines Corporation Process for releasing a thin-film structure from a substrate
JP2001185519A (ja) * 1999-12-24 2001-07-06 Hitachi Ltd 半導体装置及びその製造方法
US6444560B1 (en) * 2000-09-26 2002-09-03 International Business Machines Corporation Process for making fine pitch connections between devices and structure made by the process
US6946314B2 (en) * 2001-01-02 2005-09-20 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
US6797537B2 (en) 2001-10-30 2004-09-28 Irvine Sensors Corporation Method of making stackable layers containing encapsulated integrated circuit chips with one or more overlaying interconnect layers
TWI229435B (en) 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device
DE60235267D1 (de) * 2002-12-20 2010-03-18 Ibm Herstellungsverfahren einer dreidimensionalen vorrichtung

Also Published As

Publication number Publication date
CN101044610A (zh) 2007-09-26
WO2006018787A2 (en) 2006-02-23
US8338228B2 (en) 2012-12-25
EP1782462B1 (de) 2010-02-24
JP2008511051A (ja) 2008-04-10
DE602005019581D1 (de) 2010-04-08
EP1782462A2 (de) 2007-05-09
WO2006018787A3 (en) 2006-08-17
US20090215226A1 (en) 2009-08-27

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties