ATE454715T1 - Halbleiterschaltung mit einem isolierenden und transparenten substrat - Google Patents

Halbleiterschaltung mit einem isolierenden und transparenten substrat

Info

Publication number
ATE454715T1
ATE454715T1 AT99932974T AT99932974T ATE454715T1 AT E454715 T1 ATE454715 T1 AT E454715T1 AT 99932974 T AT99932974 T AT 99932974T AT 99932974 T AT99932974 T AT 99932974T AT E454715 T1 ATE454715 T1 AT E454715T1
Authority
AT
Austria
Prior art keywords
transparent
thin layer
functional elements
insulating
silicon
Prior art date
Application number
AT99932974T
Other languages
English (en)
Inventor
Jean Pollard
Original Assignee
Jean Pollard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jean Pollard filed Critical Jean Pollard
Application granted granted Critical
Publication of ATE454715T1 publication Critical patent/ATE454715T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Silicon Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
AT99932974T 1998-07-28 1999-07-26 Halbleiterschaltung mit einem isolierenden und transparenten substrat ATE454715T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9809662A FR2781928B1 (fr) 1998-07-28 1998-07-28 Dispositif comprenant une puce semi-conductrice a substrat originel isolant et transparent
PCT/FR1999/001831 WO2000007243A1 (fr) 1998-07-28 1999-07-26 Dispositif comprenant une puce semi-conductrice a substrat originel isolant et transparent

Publications (1)

Publication Number Publication Date
ATE454715T1 true ATE454715T1 (de) 2010-01-15

Family

ID=9529127

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99932974T ATE454715T1 (de) 1998-07-28 1999-07-26 Halbleiterschaltung mit einem isolierenden und transparenten substrat

Country Status (6)

Country Link
US (1) US6433362B1 (de)
EP (1) EP1042813B1 (de)
AT (1) ATE454715T1 (de)
DE (1) DE69941891D1 (de)
FR (1) FR2781928B1 (de)
WO (1) WO2000007243A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545333B1 (en) * 2001-04-25 2003-04-08 International Business Machines Corporation Light controlled silicon on insulator device
GB0211324D0 (en) * 2002-05-17 2002-06-26 Elam T Ltd Display

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701249A (en) * 1971-03-12 1972-10-31 Hamilton Watch Co Solid state timepiece with liquid crystal display
JPS6439733A (en) * 1987-08-06 1989-02-10 Seiko Epson Corp Manufacture of semiconductor device
US6067062A (en) * 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
JP3526058B2 (ja) * 1992-08-19 2004-05-10 セイコーインスツルメンツ株式会社 光弁用半導体装置
KR950007973B1 (ko) * 1992-11-27 1995-07-21 삼성전자주식회사 휴대용 무선송수신기의 고주파 출력레벨 보상회로
US5491571A (en) * 1993-01-19 1996-02-13 Hughes Aircraft Company Liquid crystal display including electrodes and driver devices integrally formed in monocrystalline semiconductor layer
US5815126A (en) * 1993-10-22 1998-09-29 Kopin Corporation Monocular portable communication and display system
KR970006262B1 (ko) * 1994-02-04 1997-04-25 금성일렉트론 주식회사 도우핑된 디스포저블층(disposable layer)을 이용한 모스트랜지스터의 제조방법

Also Published As

Publication number Publication date
FR2781928B1 (fr) 2000-12-08
EP1042813B1 (de) 2010-01-06
EP1042813A1 (de) 2000-10-11
WO2000007243A1 (fr) 2000-02-10
US6433362B1 (en) 2002-08-13
DE69941891D1 (de) 2010-02-25
FR2781928A1 (fr) 2000-02-04

Similar Documents

Publication Publication Date Title
ATE362656T1 (de) Photovoltaisches modul
DE69840004D1 (de) Silizium-Halbleiterwafer mit idealem Sauerstoff-Ablagerungsverhalten
DE68911702D1 (de) Halbleitervorrichtung mit zusammengesetztem Substrat, hergestellt aus zwei Halbleitersubstraten in engem Kontakt.
DE69941045D1 (de) Herstellungsverfahren für passive und aktive Bauelemente auf demselben isolierten Substrat
YU121890A (sh) Elementi za pakovanje lepljivih delova supstrata i njihova primena
DE69943178D1 (de) Physikalische Isolation von Gebieten eines Halbleitersubstrats
ATE537224T1 (de) Farbeffektmaterialien and deren herstellung
FR2843481B1 (fr) Memoire sur substrat du type silicium sur isolant
DE69941398D1 (de) Herstellungsmethode eines opto-elektronischen dünnfilmbauelementes
SE9000245L (sv) Halvledarkomponent och foerfarande foer dess framstaellning
ATE454715T1 (de) Halbleiterschaltung mit einem isolierenden und transparenten substrat
KR920008838A (ko) 실리콘 단결정 기판 제조방법
KR900017129A (ko) 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법
KR960009207A (ko) 포토 다이오드 내장 반도체 장치
KR900005593A (ko) 반도체장치
ATE253772T1 (de) Photovoltaisches bauelement aus amorphem silizium
ATE356436T1 (de) Halbleiterchip mit oberflächenabdeckung gegen optische untersuchung der schaltungsstruktur
DE69838507D1 (de) Gesicherte integrierte halbleiterschaltungsanordnung und herstellungsverfahren
DE59902340D1 (de) Sensor in dünnfilmbauweise
KR900001020A (ko) 반도체 집적회로 장치
KR910003817A (ko) 반도체 장치
FR2795200B1 (fr) Dispositif electronique comportant au moins une puce fixee sur un support et procede de fabrication d'un tel dispositif
KR900017112A (ko) 반도체장치의 제조방법
KR910007127A (ko) 반도체 입력패드 정전기 보호장치
JPS5636157A (en) Semiconductor device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties