ATE447201T1 - Dauerhaftes optisches system für einen projektionsbelichtingsapparat und verfahren zu dessen herstellung - Google Patents

Dauerhaftes optisches system für einen projektionsbelichtingsapparat und verfahren zu dessen herstellung

Info

Publication number
ATE447201T1
ATE447201T1 AT99121982T AT99121982T ATE447201T1 AT E447201 T1 ATE447201 T1 AT E447201T1 AT 99121982 T AT99121982 T AT 99121982T AT 99121982 T AT99121982 T AT 99121982T AT E447201 T1 ATE447201 T1 AT E447201T1
Authority
AT
Austria
Prior art keywords
optical system
exposure apparatus
projection exposure
production
durable optical
Prior art date
Application number
AT99121982T
Other languages
English (en)
Inventor
Hiroki Jinbo
Seishi Fujiwara
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE447201T1 publication Critical patent/ATE447201T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Glass Compositions (AREA)
  • Microscoopes, Condenser (AREA)
  • Lenses (AREA)
  • Glass Melting And Manufacturing (AREA)
AT99121982T 1998-11-10 1999-11-10 Dauerhaftes optisches system für einen projektionsbelichtingsapparat und verfahren zu dessen herstellung ATE447201T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10318472A JP2000143278A (ja) 1998-11-10 1998-11-10 耐久性の向上された投影露光装置及び結像光学系の製造方法

Publications (1)

Publication Number Publication Date
ATE447201T1 true ATE447201T1 (de) 2009-11-15

Family

ID=18099504

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99121982T ATE447201T1 (de) 1998-11-10 1999-11-10 Dauerhaftes optisches system für einen projektionsbelichtingsapparat und verfahren zu dessen herstellung

Country Status (5)

Country Link
US (2) US6373554B1 (de)
EP (1) EP1001314B1 (de)
JP (1) JP2000143278A (de)
AT (1) ATE447201T1 (de)
DE (1) DE69941592D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001270731A (ja) * 2000-03-28 2001-10-02 Nikon Corp 合成石英ガラス部材及びこれを用いた光リソグラフィー装置
US20070076161A1 (en) * 2000-06-07 2007-04-05 Kabushiki Kaisha Advanced Display Liquid-crystal display device and process of fabricating it
JP2002244034A (ja) * 2001-02-21 2002-08-28 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP4763159B2 (ja) * 2001-06-15 2011-08-31 シスメックス株式会社 フローサイトメータ
JP4324957B2 (ja) * 2002-05-27 2009-09-02 株式会社ニコン 照明光学装置、露光装置および露光方法
US7289277B2 (en) 2002-07-09 2007-10-30 Asml Holding N.V. Relay lens used in an illumination system of a lithography system
JP4305611B2 (ja) * 2002-07-18 2009-07-29 株式会社ニコン 照明光学装置、露光装置および露光方法
WO2004073052A1 (ja) * 2003-02-17 2004-08-26 Nikon Corporation 露光装置及び露光装置用光学部材
US7265070B2 (en) * 2003-11-26 2007-09-04 Corning Incorporated Synthetic silica glass optical material having high resistance to optically induced index change
US7375794B2 (en) * 2004-08-04 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165253B1 (de) * 1983-12-22 1989-01-11 AT&T Corp. Herstellung eines glasgegenstandes aus quarzglas
DE69015453T3 (de) * 1989-06-09 2001-10-11 Heraeus Quarzglas Gmbh & Co. Kg Optische Teile und Rohlinge aus synthetischem Siliziumdioxidglas und Verfahren zu ihrer Herstellung.
US5364433A (en) * 1991-06-29 1994-11-15 Shin-Etsu Quartz Products Company Limited Optical member of synthetic quartz glass for excimer lasers and method for producing same
US5699183A (en) * 1993-02-10 1997-12-16 Nikon Corporation Silica glass member for UV-lithography, method for silica glass production, and method for silica glass member production
JP3705501B2 (ja) 1994-08-03 2005-10-12 信越化学工業株式会社 エキシマレーザ光学素材用合成石英ガラス部材の製造方法
US6087283A (en) * 1995-01-06 2000-07-11 Nikon Corporation Silica glass for photolithography
US5707908A (en) * 1995-01-06 1998-01-13 Nikon Corporation Silica glass
US6094941A (en) * 1995-06-06 2000-08-01 Shin-Etsu Quartz Products Co., Ltd. Process for manufacturing optical member for excimer laser
JP3491212B2 (ja) * 1995-06-23 2004-01-26 株式会社ニコン 露光装置、照明光学装置、照明光学系の設計方法及び露光方法
US6291377B1 (en) * 1997-08-21 2001-09-18 Nikon Corporation Silica glass and its manufacturing method
JPH1067521A (ja) 1996-08-22 1998-03-10 Nikon Corp フッ素含有石英ガラス、その製造方法、及び投影露光装置
JP3823436B2 (ja) * 1997-04-03 2006-09-20 株式会社ニコン 投影光学系
JP3716574B2 (ja) * 1997-10-07 2005-11-16 株式会社ニコン エキシマレーザ照射に対する光学部材の耐久性予測方法及び石英ガラス光学部材の選択方法
US5969803A (en) * 1998-06-30 1999-10-19 Nikon Corporation Large NA projection lens for excimer laser lithographic systems

Also Published As

Publication number Publication date
JP2000143278A (ja) 2000-05-23
US6373554B1 (en) 2002-04-16
DE69941592D1 (de) 2009-12-10
EP1001314B1 (de) 2009-10-28
US6587181B2 (en) 2003-07-01
EP1001314A3 (de) 2004-11-24
US20020135746A1 (en) 2002-09-26
EP1001314A2 (de) 2000-05-17

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Legal Events

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