ATE42973T1 - Anwendung neuer arsenate zur dotierung von halbleiterkoerpern. - Google Patents

Anwendung neuer arsenate zur dotierung von halbleiterkoerpern.

Info

Publication number
ATE42973T1
ATE42973T1 AT84303900T AT84303900T ATE42973T1 AT E42973 T1 ATE42973 T1 AT E42973T1 AT 84303900 T AT84303900 T AT 84303900T AT 84303900 T AT84303900 T AT 84303900T AT E42973 T1 ATE42973 T1 AT E42973T1
Authority
AT
Austria
Prior art keywords
sub
new
arsenates
application
semiconductor body
Prior art date
Application number
AT84303900T
Other languages
English (en)
Inventor
Herman John Beoglin
Richard Ernest Tressler
Original Assignee
Stemcor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stemcor Corp filed Critical Stemcor Corp
Application granted granted Critical
Publication of ATE42973T1 publication Critical patent/ATE42973T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G28/00—Compounds of arsenic
    • C01G28/02—Arsenates; Arsenites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/24997—Of metal-containing material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Saccharide Compounds (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Inorganic Insulating Materials (AREA)
  • Luminescent Compositions (AREA)
  • Compositions Of Oxide Ceramics (AREA)
AT84303900T 1983-06-08 1984-06-08 Anwendung neuer arsenate zur dotierung von halbleiterkoerpern. ATE42973T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/502,262 US4798764A (en) 1983-06-08 1983-06-08 Arsenate dopant sources and method of making the sources
EP84303900A EP0134077B1 (de) 1983-06-08 1984-06-08 Anwendung neuer Arsenate zur Dotierung von Halbleiterkörpern

Publications (1)

Publication Number Publication Date
ATE42973T1 true ATE42973T1 (de) 1989-05-15

Family

ID=23997038

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84303900T ATE42973T1 (de) 1983-06-08 1984-06-08 Anwendung neuer arsenate zur dotierung von halbleiterkoerpern.

Country Status (7)

Country Link
US (1) US4798764A (de)
EP (1) EP0134077B1 (de)
JP (1) JPS6036333A (de)
KR (1) KR930004242B1 (de)
AT (1) ATE42973T1 (de)
CA (1) CA1248855A (de)
DE (1) DE3478125D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE56118B1 (en) * 1983-06-08 1991-04-24 Kennecott Corp Foam semiconductor dopant carriers
JP2615726B2 (ja) * 1987-12-25 1997-06-04 三菱マテリアル株式会社 押出材定寸切断装置
JPH0628250B2 (ja) * 1988-07-18 1994-04-13 古河機械金属株式会社 砒素拡散剤とその成形物の製法およびこれを使用した半導体装置の製造方法
US8394710B2 (en) 2010-06-21 2013-03-12 International Business Machines Corporation Semiconductor devices fabricated by doped material layer as dopant source
US8420464B2 (en) 2011-05-04 2013-04-16 International Business Machines Corporation Spacer as hard mask scheme for in-situ doping in CMOS finFETs
JP2018522718A (ja) 2015-07-01 2018-08-16 スリーエム イノベイティブ プロパティズ カンパニー Ｐｖｐ含有かつ／又はｐｖｌ含有複合膜並びに使用方法
EP3316999A1 (de) 2015-07-01 2018-05-09 3M Innovative Properties Company Polymere ionomertrennmembranen und verfahren zur verwendung
JP6838819B2 (ja) 2015-07-01 2021-03-03 スリーエム イノベイティブ プロパティズ カンパニー 向上した性能及び／又は耐久性を有する複合膜並びに使用方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA206508A (en) * 1920-12-14 M. Weston Thomas Cultivator
CA277392A (en) * 1928-01-24 Altwegg Jean Calcium arsenite
CA290229A (en) * 1929-06-04 Lee Tanner Wellington Process of making arsenates of manganese
US1737114A (en) * 1924-12-11 1929-11-26 Dow Chemical Co Method of making magnesium arsenate
FR890611A (fr) * 1942-08-25 1944-02-14 Procédé de fabrication d'arséniate de calcium
FR1011383A (fr) * 1949-01-29 1952-06-23 Procédé de fabrication d'arséniate de chaux
DE1232265B (de) * 1960-03-11 1967-01-12 Philips Patentverwaltung Verfahren zur Herstellung eines Legierungsdiffusionstransistors
DE1444521B2 (de) * 1962-02-01 1971-02-25 Siemens AG, 1000 Berlin u 8000 München Verfahren zur herstellung einer halbleiteranordnung
US3354005A (en) * 1965-10-23 1967-11-21 Western Electric Co Methods of applying doping compositions to base materials
US3532563A (en) * 1968-03-19 1970-10-06 Milton Genser Doping of semiconductor surfaces
US3630793A (en) * 1969-02-24 1971-12-28 Ralph W Christensen Method of making junction-type semiconductor devices
US3923563A (en) * 1973-04-16 1975-12-02 Owens Illinois Inc Process for doping silicon semiconductors using an impregnated refractory dopant source
US3920882A (en) * 1973-04-16 1975-11-18 Owens Illinois Inc N-type dopant source
IE56118B1 (en) * 1983-06-08 1991-04-24 Kennecott Corp Foam semiconductor dopant carriers
US4526826A (en) * 1983-06-08 1985-07-02 Kennecott Corporation Foam semiconductor dopant carriers

Also Published As

Publication number Publication date
CA1248855A (en) 1989-01-17
US4798764A (en) 1989-01-17
KR850005130A (ko) 1985-08-21
DE3478125D1 (en) 1989-06-15
EP0134077A3 (en) 1985-04-10
JPS6036333A (ja) 1985-02-25
KR930004242B1 (ko) 1993-05-22
EP0134077A2 (de) 1985-03-13
EP0134077B1 (de) 1989-05-10

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee