ES2011211T3 - Aplicacion de mono- o difenilarsenico para la fabricacion de capas segun el procedimiento de epitaxia de fases gaseosas. - Google Patents

Aplicacion de mono- o difenilarsenico para la fabricacion de capas segun el procedimiento de epitaxia de fases gaseosas.

Info

Publication number
ES2011211T3
ES2011211T3 ES89106118T ES89106118T ES2011211T3 ES 2011211 T3 ES2011211 T3 ES 2011211T3 ES 89106118 T ES89106118 T ES 89106118T ES 89106118 T ES89106118 T ES 89106118T ES 2011211 T3 ES2011211 T3 ES 2011211T3
Authority
ES
Spain
Prior art keywords
diphenylarsenic
mono
manufacture
application
layers according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES89106118T
Other languages
English (en)
Other versions
ES2011211A4 (es
Inventor
Hartmut Dr Hofmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PREUSSAG PURE METALS GmbH
Original Assignee
PREUSSAG PURE METALS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PREUSSAG PURE METALS GmbH filed Critical PREUSSAG PURE METALS GmbH
Publication of ES2011211A4 publication Critical patent/ES2011211A4/es
Application granted granted Critical
Publication of ES2011211T3 publication Critical patent/ES2011211T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/66—Arsenic compounds
    • C07F9/70—Organo-arsenic compounds
    • C07F9/74—Aromatic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

COMPUESTOS METALOORGANICOS EN FORMA DE FENILARSINA DE APLICACION EN EL CAMPO ELECTRONICO COMO MATERIALES PARA LOS PROCESOS MO - VPE O MO - CVD O MOMBE, ASI COMO PARA LA IMPLANTACION DE IONES O PARA EL DOPING IN SITU DE POLISILICIO.
ES89106118T 1988-04-13 1989-04-07 Aplicacion de mono- o difenilarsenico para la fabricacion de capas segun el procedimiento de epitaxia de fases gaseosas. Expired - Lifetime ES2011211T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3812180A DE3812180A1 (de) 1988-04-13 1988-04-13 Metallorganische verbindungen zur verwendung im elektronischen bereich

Publications (2)

Publication Number Publication Date
ES2011211A4 ES2011211A4 (es) 1990-01-01
ES2011211T3 true ES2011211T3 (es) 1994-12-16

Family

ID=6351830

Family Applications (1)

Application Number Title Priority Date Filing Date
ES89106118T Expired - Lifetime ES2011211T3 (es) 1988-04-13 1989-04-07 Aplicacion de mono- o difenilarsenico para la fabricacion de capas segun el procedimiento de epitaxia de fases gaseosas.

Country Status (8)

Country Link
US (1) US5004821A (es)
EP (1) EP0337304B1 (es)
JP (1) JPH02229721A (es)
KR (1) KR890016053A (es)
AT (1) ATE99691T1 (es)
DE (2) DE3812180A1 (es)
ES (1) ES2011211T3 (es)
GR (1) GR930300118T1 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4017966C2 (de) * 1990-06-05 1996-05-30 Ppm Pure Metals Gmbh Verwendung elementorganischer Verbindungen zur Abscheidung aus der Gasphase
US5300185A (en) * 1991-03-29 1994-04-05 Kabushiki Kaisha Toshiba Method of manufacturing III-V group compound semiconductor
US5242859A (en) * 1992-07-14 1993-09-07 International Business Machines Corporation Highly doped semiconductor material and method of fabrication thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE251571C (es) * 1900-01-01
US4734514A (en) * 1984-10-25 1988-03-29 Morton Thiokol, Inc. Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical vapor deposition
US4721683A (en) * 1987-05-21 1988-01-26 American Cyanamid Company Use of alkylphosphines and alkylarsines in ion implantation
US4857655A (en) * 1988-01-20 1989-08-15 American Cyanamid Company Process for making alkyl arsine compounds
US4900855A (en) * 1988-12-14 1990-02-13 Cvd Incorporated Chemical process for obtaining high purification of monoalkylarsines and dialkylarsines and purified mono- and dialkylarsines

Also Published As

Publication number Publication date
JPH02229721A (ja) 1990-09-12
ATE99691T1 (de) 1994-01-15
DE3812180A1 (de) 1989-10-26
EP0337304B1 (de) 1994-01-05
DE58906612D1 (de) 1994-02-17
GR930300118T1 (en) 1993-11-30
EP0337304A1 (de) 1989-10-18
US5004821A (en) 1991-04-02
KR890016053A (ko) 1989-11-28
ES2011211A4 (es) 1990-01-01

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