ATE429034T1 - Leistungswechselrichter und dessen herstellung - Google Patents

Leistungswechselrichter und dessen herstellung

Info

Publication number
ATE429034T1
ATE429034T1 AT04300311T AT04300311T ATE429034T1 AT E429034 T1 ATE429034 T1 AT E429034T1 AT 04300311 T AT04300311 T AT 04300311T AT 04300311 T AT04300311 T AT 04300311T AT E429034 T1 ATE429034 T1 AT E429034T1
Authority
AT
Austria
Prior art keywords
transistors
production
power inverter
cell
segments
Prior art date
Application number
AT04300311T
Other languages
English (en)
Inventor
Fabrice Breit
Thierry Lebey
Original Assignee
Alstom Transport Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alstom Transport Sa filed Critical Alstom Transport Sa
Application granted granted Critical
Publication of ATE429034T1 publication Critical patent/ATE429034T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Rectifiers (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • General Induction Heating (AREA)
AT04300311T 2003-06-04 2004-06-02 Leistungswechselrichter und dessen herstellung ATE429034T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0306748A FR2855912B1 (fr) 2003-06-04 2003-06-04 Cellule de commutation de puissance, et procede de fabrication de la cellule

Publications (1)

Publication Number Publication Date
ATE429034T1 true ATE429034T1 (de) 2009-05-15

Family

ID=33155654

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04300311T ATE429034T1 (de) 2003-06-04 2004-06-02 Leistungswechselrichter und dessen herstellung

Country Status (6)

Country Link
US (1) US6995409B2 (de)
EP (1) EP1484797B1 (de)
AT (1) ATE429034T1 (de)
DE (1) DE602004020541D1 (de)
ES (1) ES2325921T3 (de)
FR (1) FR2855912B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7298034B2 (en) * 2004-06-28 2007-11-20 Semiconductor Components Industries, L.L.C. Multi-chip semiconductor connector assemblies
US7202106B2 (en) 2004-06-28 2007-04-10 Semiconductor Components Industries, L.L.C. Multi-chip semiconductor connector and method
DE602005006310T2 (de) * 2004-11-24 2009-05-20 Danfoss Silicon Power Gmbh Durchflussverteilungsmodul und Stapel von Durchflussverteilungsmodulen
BRPI0715330A2 (pt) * 2006-08-04 2012-12-25 Clean Current Power Systems Inc mÁquina de eixos de interrupÇço a ar tendo o estator e os discos rotores formados por méltiplos segmentos destacÁveis
KR100807980B1 (ko) 2006-11-27 2008-02-28 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US7773381B2 (en) 2007-09-26 2010-08-10 Rohm Co., Ltd. Semiconductor device
CN112908943A (zh) * 2021-01-12 2021-06-04 华为技术有限公司 一种埋入式封装结构及其制备方法、终端设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421319A1 (de) * 1994-06-17 1995-12-21 Abb Management Ag Niederinduktives Leistungshalbleitermodul
US6060795A (en) * 1998-03-18 2000-05-09 Intersil Corporation Semiconductor power pack
EP2244289B1 (de) * 2000-04-19 2014-03-26 Denso Corporation Kühlmittelgekühltes Halbleiterbauelement
JP3894413B2 (ja) * 2000-06-08 2007-03-22 三菱電機株式会社 車両用交流発電機
JP2002026251A (ja) * 2000-07-11 2002-01-25 Toshiba Corp 半導体装置
EP1318547B1 (de) * 2001-12-06 2013-04-17 ABB Research Ltd. Leistungshalbleiter-Modul

Also Published As

Publication number Publication date
FR2855912B1 (fr) 2006-04-14
DE602004020541D1 (de) 2009-05-28
US6995409B2 (en) 2006-02-07
EP1484797B1 (de) 2009-04-15
FR2855912A1 (fr) 2004-12-10
ES2325921T3 (es) 2009-09-24
US20050017264A1 (en) 2005-01-27
EP1484797A1 (de) 2004-12-08

Similar Documents

Publication Publication Date Title
ATE548754T1 (de) Komplementäre bipolar-halbleitervorrichtung und herstellungsverfahren
TW200629544A (en) Field effect transistor (FET) having wire channels and method of fabricating the same
TW200618282A (en) Asymmetric layout structures for transistors and methods of fabricating the same
ATE539450T1 (de) Siliziumkarbid leistungs-mosfets mit kurzgeschlossenem kanal und verfahren zur deren herstellung
WO2005086237A3 (en) Ldmos transistor and method of making the same
TW200507255A (en) Semiconductor device and method of fabricating the same
SE0303106D0 (sv) Ldmos transistor device, integrated circuit, and fabrication method thereof
TW200511508A (en) Semiconductor device, method for manufacturing the semiconductor device, and integrated circuit including the semiconductor device
WO2009060934A1 (ja) 半導体装置及びその製造方法
WO2007149580A3 (en) Closed cell configuration to increase channel density for sub-micron planar semiconductor power device
SG115733A1 (en) Thin film transistor, semiconductor device, and method for manufacturing the same
ATE429034T1 (de) Leistungswechselrichter und dessen herstellung
ATE551726T1 (de) Transistor mit vertikal isoliertem gate und herstellungsverfahren
TW200636991A (en) Integrated circuit including power diode
ATE533184T1 (de) Verfahren zur herstellung von asymmetrischen und symmetrischen doppelgatetransistoren auf demselben substrat
WO2005117073A3 (en) Semiconductor device and method for manufacture
SE0302594D0 (sv) Vertical DMOS transistor device, integrated circuit, and fabrication method thereof
DE50014606D1 (de) Igbt mit pn-isolation
WO2002082550A3 (de) Speicherzellenarray und verfahren zur herstellung desselben
TWI264122B (en) Semiconductor device and method for fabricating the same
TW200627639A (en) Semiconductor device with OMEGA gate and method for fabricating a semiconductor device
TW200629410A (en) Semiconductor substrate, semiconductor device and method of manufacturing the same
SG139541A1 (en) Thyristor-based sram and method using quasi-planar finfet process for fabrication thereof
TW200715563A (en) Semiconductor device and method for manufacturing the same
TW200607081A (en) Flash memory structure and fabrication method thereof

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1484797

Country of ref document: EP