ATE396193T1 - Vorläuferverbindungen für silica oder metallsilikatdünnschichten - Google Patents
Vorläuferverbindungen für silica oder metallsilikatdünnschichtenInfo
- Publication number
- ATE396193T1 ATE396193T1 AT05026611T AT05026611T ATE396193T1 AT E396193 T1 ATE396193 T1 AT E396193T1 AT 05026611 T AT05026611 T AT 05026611T AT 05026611 T AT05026611 T AT 05026611T AT E396193 T1 ATE396193 T1 AT E396193T1
- Authority
- AT
- Austria
- Prior art keywords
- tert
- silica
- silanol
- bis
- thin layers
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 150000001875 compounds Chemical class 0.000 title 1
- 229910052914 metal silicate Inorganic materials 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- NXEPWVPWSWRGLP-UHFFFAOYSA-N hydroxy-(2-methylbutan-2-yloxy)-bis[(2-methylpropan-2-yl)oxy]silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C NXEPWVPWSWRGLP-UHFFFAOYSA-N 0.000 abstract 1
- XUZMGPPDEWMALW-UHFFFAOYSA-N hydroxy-(2-methylbutan-2-yloxy)-di(propan-2-yloxy)silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)C)OC(C)C XUZMGPPDEWMALW-UHFFFAOYSA-N 0.000 abstract 1
- FNVCPESKXNYSRN-UHFFFAOYSA-N hydroxy-[(2-methylpropan-2-yl)oxy]-di(propan-2-yloxy)silane Chemical compound CC(C)O[Si](O)(OC(C)C)OC(C)(C)C FNVCPESKXNYSRN-UHFFFAOYSA-N 0.000 abstract 1
- DIVDDOMEZHCODA-UHFFFAOYSA-N hydroxy-bis(2-methylbutan-2-yloxy)-[(2-methylpropan-2-yl)oxy]silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)CC DIVDDOMEZHCODA-UHFFFAOYSA-N 0.000 abstract 1
- OFFJSCPPFVVFAJ-UHFFFAOYSA-N hydroxy-bis(2-methylbutan-2-yloxy)-propan-2-yloxysilane Chemical compound CCC(C)(C)O[Si](O)(OC(C)C)OC(C)(C)CC OFFJSCPPFVVFAJ-UHFFFAOYSA-N 0.000 abstract 1
- MBMITMZVBNZJTQ-UHFFFAOYSA-N hydroxy-bis[(2-methylpropan-2-yl)oxy]-propan-2-yloxysilane Chemical compound CC(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C MBMITMZVBNZJTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052752 metalloid Inorganic materials 0.000 abstract 1
- -1 metalloid silicate Chemical class 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/04—Esters of silicic acids
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/20—Silicates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/20—Silicates
- C01B33/22—Magnesium silicates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Silicon Compounds (AREA)
- Silicon Polymers (AREA)
- Glass Compositions (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/008,069 US7064227B1 (en) | 2004-12-09 | 2004-12-09 | Precursors for silica or metal silicate films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE396193T1 true ATE396193T1 (de) | 2008-06-15 |
Family
ID=35871081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05026611T ATE396193T1 (de) | 2004-12-09 | 2005-12-06 | Vorläuferverbindungen für silica oder metallsilikatdünnschichten |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7064227B1 (de) |
| EP (1) | EP1669361B1 (de) |
| JP (1) | JP2006160744A (de) |
| KR (1) | KR100651993B1 (de) |
| CN (1) | CN1821251A (de) |
| AT (1) | ATE396193T1 (de) |
| DE (1) | DE602005006948D1 (de) |
| TW (1) | TW200624438A (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002027063A2 (en) | 2000-09-28 | 2002-04-04 | President And Fellows Of Harward College | Vapor deposition of oxides, silicates and phosphates |
| WO2003083167A1 (en) * | 2002-03-28 | 2003-10-09 | President And Fellows Of Harvard College | Vapor deposition of silicon dioxide nanolaminates |
| US7297608B1 (en) | 2004-06-22 | 2007-11-20 | Novellus Systems, Inc. | Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition |
| US7294583B1 (en) * | 2004-12-23 | 2007-11-13 | Novellus Systems, Inc. | Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films |
| US7482247B1 (en) | 2004-12-30 | 2009-01-27 | Novellus Systems, Inc. | Conformal nanolaminate dielectric deposition and etch bag gap fill process |
| US7589028B1 (en) | 2005-11-15 | 2009-09-15 | Novellus Systems, Inc. | Hydroxyl bond removal and film densification method for oxide films using microwave post treatment |
| US7491653B1 (en) | 2005-12-23 | 2009-02-17 | Novellus Systems, Inc. | Metal-free catalysts for pulsed deposition layer process for conformal silica laminates |
| US7288463B1 (en) | 2006-04-28 | 2007-10-30 | Novellus Systems, Inc. | Pulsed deposition layer gap fill with expansion material |
| US7625820B1 (en) | 2006-06-21 | 2009-12-01 | Novellus Systems, Inc. | Method of selective coverage of high aspect ratio structures with a conformal film |
| DE102006046553A1 (de) * | 2006-09-28 | 2008-04-03 | Innovent E.V. | Verfahren zum Aufbringen silikatischer Schichten unter Normaldruck |
| JP2011216862A (ja) * | 2010-03-16 | 2011-10-27 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
| CN116284096B (zh) * | 2023-05-19 | 2023-09-19 | 研峰科技(北京)有限公司 | 一种超低氯离子含量的三(叔丁氧基)硅烷醇的合成方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2995593A (en) * | 1958-06-30 | 1961-08-08 | California Research Corp | Hexaalkoxydisiloxanes |
| WO2002027063A2 (en) | 2000-09-28 | 2002-04-04 | President And Fellows Of Harward College | Vapor deposition of oxides, silicates and phosphates |
| WO2003083167A1 (en) | 2002-03-28 | 2003-10-09 | President And Fellows Of Harvard College | Vapor deposition of silicon dioxide nanolaminates |
-
2004
- 2004-12-09 US US11/008,069 patent/US7064227B1/en active Active
-
2005
- 2005-12-06 EP EP05026611A patent/EP1669361B1/de not_active Not-in-force
- 2005-12-06 TW TW094143055A patent/TW200624438A/zh unknown
- 2005-12-06 DE DE602005006948T patent/DE602005006948D1/de not_active Expired - Fee Related
- 2005-12-06 AT AT05026611T patent/ATE396193T1/de not_active IP Right Cessation
- 2005-12-08 KR KR1020050119363A patent/KR100651993B1/ko not_active IP Right Cessation
- 2005-12-09 CN CNA2005101373594A patent/CN1821251A/zh active Pending
- 2005-12-09 JP JP2005355620A patent/JP2006160744A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR100651993B1 (ko) | 2006-12-01 |
| CN1821251A (zh) | 2006-08-23 |
| EP1669361B1 (de) | 2008-05-21 |
| US7064227B1 (en) | 2006-06-20 |
| EP1669361A1 (de) | 2006-06-14 |
| US20060127578A1 (en) | 2006-06-15 |
| DE602005006948D1 (de) | 2008-07-03 |
| JP2006160744A (ja) | 2006-06-22 |
| TW200624438A (en) | 2006-07-16 |
| KR20060065519A (ko) | 2006-06-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |