DE602005006948D1 - Vorläuferverbindungen für Silica oder Metallsilikatdünnschichten - Google Patents

Vorläuferverbindungen für Silica oder Metallsilikatdünnschichten

Info

Publication number
DE602005006948D1
DE602005006948D1 DE602005006948T DE602005006948T DE602005006948D1 DE 602005006948 D1 DE602005006948 D1 DE 602005006948D1 DE 602005006948 T DE602005006948 T DE 602005006948T DE 602005006948 T DE602005006948 T DE 602005006948T DE 602005006948 D1 DE602005006948 D1 DE 602005006948D1
Authority
DE
Germany
Prior art keywords
tert
silica
silanol
bis
thin films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602005006948T
Other languages
English (en)
Inventor
Xinjian Lei
Ron Rulkens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE602005006948D1 publication Critical patent/DE602005006948D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/20Silicates
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/04Esters of silicic acids
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/20Silicates
    • C01B33/22Magnesium silicates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/06Preparatory processes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Compounds (AREA)
  • Silicon Polymers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
DE602005006948T 2004-12-09 2005-12-06 Vorläuferverbindungen für Silica oder Metallsilikatdünnschichten Expired - Fee Related DE602005006948D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/008,069 US7064227B1 (en) 2004-12-09 2004-12-09 Precursors for silica or metal silicate films

Publications (1)

Publication Number Publication Date
DE602005006948D1 true DE602005006948D1 (de) 2008-07-03

Family

ID=35871081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005006948T Expired - Fee Related DE602005006948D1 (de) 2004-12-09 2005-12-06 Vorläuferverbindungen für Silica oder Metallsilikatdünnschichten

Country Status (8)

Country Link
US (1) US7064227B1 (de)
EP (1) EP1669361B1 (de)
JP (1) JP2006160744A (de)
KR (1) KR100651993B1 (de)
CN (1) CN1821251A (de)
AT (1) ATE396193T1 (de)
DE (1) DE602005006948D1 (de)
TW (1) TW200624438A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100815009B1 (ko) 2000-09-28 2008-03-18 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 산화물, 규산염 및 인산염의 증기를 이용한 석출
CN100360710C (zh) 2002-03-28 2008-01-09 哈佛学院院长等 二氧化硅纳米层压材料的气相沉积
US7297608B1 (en) 2004-06-22 2007-11-20 Novellus Systems, Inc. Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
US7294583B1 (en) * 2004-12-23 2007-11-13 Novellus Systems, Inc. Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films
US7482247B1 (en) 2004-12-30 2009-01-27 Novellus Systems, Inc. Conformal nanolaminate dielectric deposition and etch bag gap fill process
US7589028B1 (en) 2005-11-15 2009-09-15 Novellus Systems, Inc. Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
US7491653B1 (en) 2005-12-23 2009-02-17 Novellus Systems, Inc. Metal-free catalysts for pulsed deposition layer process for conformal silica laminates
US7288463B1 (en) 2006-04-28 2007-10-30 Novellus Systems, Inc. Pulsed deposition layer gap fill with expansion material
US7625820B1 (en) 2006-06-21 2009-12-01 Novellus Systems, Inc. Method of selective coverage of high aspect ratio structures with a conformal film
DE102006046553A1 (de) * 2006-09-28 2008-04-03 Innovent E.V. Verfahren zum Aufbringen silikatischer Schichten unter Normaldruck
JP2011216862A (ja) * 2010-03-16 2011-10-27 Tokyo Electron Ltd 成膜方法及び成膜装置
CN116284096B (zh) * 2023-05-19 2023-09-19 研峰科技(北京)有限公司 一种超低氯离子含量的三(叔丁氧基)硅烷醇的合成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2995593A (en) * 1958-06-30 1961-08-08 California Research Corp Hexaalkoxydisiloxanes
KR100815009B1 (ko) 2000-09-28 2008-03-18 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 산화물, 규산염 및 인산염의 증기를 이용한 석출
CN100360710C (zh) 2002-03-28 2008-01-09 哈佛学院院长等 二氧化硅纳米层压材料的气相沉积

Also Published As

Publication number Publication date
TW200624438A (en) 2006-07-16
US20060127578A1 (en) 2006-06-15
EP1669361B1 (de) 2008-05-21
JP2006160744A (ja) 2006-06-22
CN1821251A (zh) 2006-08-23
EP1669361A1 (de) 2006-06-14
ATE396193T1 (de) 2008-06-15
KR100651993B1 (ko) 2006-12-01
KR20060065519A (ko) 2006-06-14
US7064227B1 (en) 2006-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee