ATE395745T1 - Rauscharmer verstärker mit gemeinsamem gate mit resistiver durchspeisung - Google Patents

Rauscharmer verstärker mit gemeinsamem gate mit resistiver durchspeisung

Info

Publication number
ATE395745T1
ATE395745T1 AT03814688T AT03814688T ATE395745T1 AT E395745 T1 ATE395745 T1 AT E395745T1 AT 03814688 T AT03814688 T AT 03814688T AT 03814688 T AT03814688 T AT 03814688T AT E395745 T1 ATE395745 T1 AT E395745T1
Authority
AT
Austria
Prior art keywords
feed
transistor
amplifier
low noise
common gate
Prior art date
Application number
AT03814688T
Other languages
English (en)
Inventor
Seyed-Ali Hajimiri
Xiang Guan
Original Assignee
California Inst Of Techn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn filed Critical California Inst Of Techn
Application granted granted Critical
Publication of ATE395745T1 publication Critical patent/ATE395745T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
AT03814688T 2002-12-20 2003-12-09 Rauscharmer verstärker mit gemeinsamem gate mit resistiver durchspeisung ATE395745T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43550402P 2002-12-20 2002-12-20

Publications (1)

Publication Number Publication Date
ATE395745T1 true ATE395745T1 (de) 2008-05-15

Family

ID=32713042

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03814688T ATE395745T1 (de) 2002-12-20 2003-12-09 Rauscharmer verstärker mit gemeinsamem gate mit resistiver durchspeisung

Country Status (6)

Country Link
US (2) US7157972B2 (de)
EP (1) EP1581993B1 (de)
AT (1) ATE395745T1 (de)
AU (1) AU2003303535A1 (de)
DE (1) DE60321045D1 (de)
WO (1) WO2004062093A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689743B1 (ko) * 2004-10-01 2007-03-08 삼성전자주식회사 저잡음 증폭기의 정전기 보호 및 입력 임피던스 정합 회로및 저잡음 증폭기
GB0609739D0 (en) * 2006-05-17 2006-06-28 Univ Bradford High frequency low noise amplifier
TW200906055A (en) * 2007-07-27 2009-02-01 Rafael Microelectronics Inc Low noise amplify
JP2009272864A (ja) * 2008-05-07 2009-11-19 Fujitsu Ltd 信号処理回路
DE102008049677B4 (de) 2008-09-30 2014-09-18 Infineon Technologies Ag Spannungsversorgung in einer Schaltungsanordnung mit einem Halbleiterschaltelement
WO2010073155A1 (en) * 2008-12-24 2010-07-01 Nxp B.V. Power amplifier
KR101128830B1 (ko) 2009-11-02 2012-03-23 한양대학교 산학협력단 공통 게이트 증폭기 구조를 이용하는 저잡음 증폭기
TWI462470B (zh) * 2011-10-06 2014-11-21 Univ Nat Taiwan 寬頻低雜訊放大器之設計方法
US8723600B1 (en) * 2012-11-01 2014-05-13 Invensense, Inc. Cancellation of dynamic offset in MOS resistors
US9755590B2 (en) 2013-12-25 2017-09-05 The Trustees Of Columbia University In The City Of New York Circuits for low noise amplifiers
TWI695579B (zh) * 2017-06-08 2020-06-01 日商村田製作所股份有限公司 功率放大電路
CN113131883B (zh) * 2019-12-30 2022-10-28 澜至电子科技（成都）有限公司 低噪声放大器
CN111478671B (zh) * 2020-04-13 2023-04-14 电子科技大学 一种应用于Sub-GHz频段的新型低噪声放大器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001711A (en) * 1974-08-05 1977-01-04 Motorola, Inc. Radio frequency power amplifier constructed as hybrid microelectronic unit
JPS54172531U (de) 1978-05-25 1979-12-06
JPS5696509A (en) * 1979-12-28 1981-08-04 Sony Corp Feedback amplifying circuit
US5172074A (en) * 1990-05-25 1992-12-15 Sumitomo Electric Industries, Inc. Low noise multi-stage type amplifier
US5361038A (en) * 1993-03-11 1994-11-01 Trw Inc. Active load applications for distributed circuits
JPH07204367A (ja) 1994-01-24 1995-08-08 Yoshiyasu Sumiyoshi 電気ひげそり器
JP3355883B2 (ja) * 1995-01-13 2002-12-09 三菱電機株式会社 歪み補償回路および低歪半導体増幅器
KR0157206B1 (ko) * 1996-03-28 1999-02-18 김광호 저잡음 증폭기
EP1014565B1 (de) * 1998-12-22 2006-05-10 STMicroelectronics S.r.l. Rauscharme Verstärkerstufe mit Anpassungsschaltung
EP1081573B1 (de) * 1999-08-31 2003-04-09 STMicroelectronics S.r.l. Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme Verstärker
FR2798016B1 (fr) * 1999-08-31 2002-03-29 St Microelectronics Sa Circuit amplificateur a double bande passante et tete de reception radiofrequence
JP2002368546A (ja) * 2001-06-06 2002-12-20 Nec Corp 前置歪み補償器とそれを使用する線形増幅器
US6768380B2 (en) * 2002-10-11 2004-07-27 Caldera Micro Technology, Inc. Wideband, variable-bandwidth distributed amplifier
US6806777B2 (en) * 2003-01-02 2004-10-19 Intel Corporation Ultra wide band low noise amplifier and method

Also Published As

Publication number Publication date
US7489194B2 (en) 2009-02-10
US20070075779A1 (en) 2007-04-05
US7157972B2 (en) 2007-01-02
AU2003303535A1 (en) 2004-07-29
WO2004062093A3 (en) 2004-09-16
EP1581993A2 (de) 2005-10-05
EP1581993B1 (de) 2008-05-14
WO2004062093A2 (en) 2004-07-22
AU2003303535A8 (en) 2004-07-29
US20040124922A1 (en) 2004-07-01
DE60321045D1 (de) 2008-06-26

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Legal Events

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