ATE385043T1 - Abbildungsvorrichtung - Google Patents
AbbildungsvorrichtungInfo
- Publication number
- ATE385043T1 ATE385043T1 AT03760788T AT03760788T ATE385043T1 AT E385043 T1 ATE385043 T1 AT E385043T1 AT 03760788 T AT03760788 T AT 03760788T AT 03760788 T AT03760788 T AT 03760788T AT E385043 T1 ATE385043 T1 AT E385043T1
- Authority
- AT
- Austria
- Prior art keywords
- brick
- detection
- addressing
- photosensitive material
- imaging device
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title 1
- 239000011449 brick Substances 0.000 abstract 7
- 238000001514 detection method Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Meat, Egg Or Seafood Products (AREA)
- Massaging Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0207894A FR2841383B1 (fr) | 2002-06-25 | 2002-06-25 | Imageur pour ultraviolet |
FR0207893A FR2841382B1 (fr) | 2002-06-25 | 2002-06-25 | Imageur pour lumiere visible |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE385043T1 true ATE385043T1 (de) | 2008-02-15 |
Family
ID=30001931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03760788T ATE385043T1 (de) | 2002-06-25 | 2003-06-25 | Abbildungsvorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US7189952B2 (de) |
EP (1) | EP1516368B1 (de) |
AT (1) | ATE385043T1 (de) |
DE (1) | DE60318848T2 (de) |
WO (1) | WO2004001853A2 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040135209A1 (en) * | 2002-02-05 | 2004-07-15 | Tzu-Chiang Hsieh | Camera with MOS or CMOS sensor array |
EP1677364A1 (de) * | 2004-12-30 | 2006-07-05 | St Microelectronics S.A. | Lichtdetektor auf einer integrierten Schaltung sitzend |
KR100790237B1 (ko) * | 2005-12-29 | 2008-01-02 | 매그나칩 반도체 유한회사 | 이미지 센서의 금속배선 형성방법 |
US7714300B1 (en) * | 2006-06-27 | 2010-05-11 | Kla-Tencor Technologies Corporation | High-speed high-efficiency solid-state electron detector |
FR2907261B1 (fr) | 2006-10-12 | 2009-01-30 | Commissariat Energie Atomique | Dispositif de couplage electromagnetique d'un detecteur de rayonnement electromagnetique |
KR100872719B1 (ko) * | 2007-04-17 | 2008-12-05 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
JP2009065161A (ja) * | 2007-09-07 | 2009-03-26 | Dongbu Hitek Co Ltd | イメージセンサ及びその製造方法 |
JP4503060B2 (ja) * | 2007-09-21 | 2010-07-14 | Okiセミコンダクタ株式会社 | 紫外線センサ、紫外線センサの設定方法 |
IL189254A0 (en) * | 2008-02-04 | 2008-08-07 | Garber Valery | Quantum uncooled infra-red photo-detector |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8835831B2 (en) * | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US10297707B1 (en) * | 2009-02-23 | 2019-05-21 | Tatiana Globus | Thin film photovoltaic cell system and method of manufacture |
JP5553693B2 (ja) * | 2010-06-30 | 2014-07-16 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
KR101154709B1 (ko) * | 2010-07-28 | 2012-06-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템 |
US8753917B2 (en) * | 2010-12-14 | 2014-06-17 | International Business Machines Corporation | Method of fabricating photoconductor-on-active pixel device |
JP6197312B2 (ja) * | 2013-03-12 | 2017-09-20 | 株式会社リコー | センサ素子およびセンサ素子の製造方法 |
US20210305306A1 (en) * | 2020-03-31 | 2021-09-30 | Stmicroelectronics (Crolles 2) Sas | Pixel of a light sensor and method for manufacturing same |
CN112331687A (zh) * | 2020-11-30 | 2021-02-05 | 联合微电子中心有限责任公司 | 一种cmos图像传感器及其制作方法 |
FR3117268B1 (fr) * | 2020-12-08 | 2022-12-09 | St Microelectronics Crolles 2 Sas | Pixel d'un capteur de lumière et son procédé de fabrication |
US20230112479A1 (en) * | 2021-10-12 | 2023-04-13 | Tyntek Corporation | Photodiode |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3768112D1 (de) * | 1986-03-03 | 1991-04-04 | Toshiba Kawasaki Kk | Strahlungsdetektor. |
IT1277856B1 (it) | 1995-02-09 | 1997-11-12 | Univ Roma | Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale. |
US6114739A (en) | 1998-10-19 | 2000-09-05 | Agilent Technologies | Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode |
US6018187A (en) * | 1998-10-19 | 2000-01-25 | Hewlett-Packard Cmpany | Elevated pin diode active pixel sensor including a unique interconnection structure |
US6373117B1 (en) | 1999-05-03 | 2002-04-16 | Agilent Technologies, Inc. | Stacked multiple photosensor structure including independent electrical connections to each photosensor |
-
2003
- 2003-06-25 AT AT03760788T patent/ATE385043T1/de not_active IP Right Cessation
- 2003-06-25 EP EP03760788A patent/EP1516368B1/de not_active Expired - Lifetime
- 2003-06-25 US US10/519,012 patent/US7189952B2/en not_active Expired - Fee Related
- 2003-06-25 DE DE60318848T patent/DE60318848T2/de not_active Expired - Lifetime
- 2003-06-25 WO PCT/FR2003/001965 patent/WO2004001853A2/fr active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE60318848D1 (de) | 2008-03-13 |
US7189952B2 (en) | 2007-03-13 |
EP1516368B1 (de) | 2008-01-23 |
WO2004001853A3 (fr) | 2004-04-08 |
WO2004001853A2 (fr) | 2003-12-31 |
DE60318848T2 (de) | 2009-02-05 |
US20050224707A1 (en) | 2005-10-13 |
EP1516368A2 (de) | 2005-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE385043T1 (de) | Abbildungsvorrichtung | |
NL1011381A1 (nl) | CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. | |
FR2839842B1 (fr) | Capteur d'image, procede pour capter une image, circuit de conversion de signal et procede de reglage du decalage d'un tel circuit | |
FR2845767B1 (fr) | Capteur numerique de temperature integre | |
NL1021335A1 (nl) | Inrichting en werkwijze voor het verwerken van een uitvoer van een beeldsensor. | |
FR2875905B1 (fr) | Capteur de couple | |
FR2837282B1 (fr) | Capteur de couple | |
FR2845473B1 (fr) | Capteur de couple | |
TW200717786A (en) | Microelectronic imaging devices and associated methods for attaching transmissive elements | |
NL1019802A1 (nl) | CMOS halfgeleiderinrichting en werkwijze voor de vervaardiging daarvan. | |
BR0012075B1 (pt) | processador de sinais digitais de multitaxas para sinais sensores de conduto vibrador. | |
DE60043917D1 (de) | Sensorsignalverarbeitungsvorrichtung | |
EP1139435A3 (de) | Gehäuse in Chipgrösse für integrierte Bildaufnahmevorrichtungen | |
DE60226383D1 (de) | Verarbeitung der Signale eines Bildsensors mit mehreren Sensorchips | |
HK1061329A1 (en) | Image sensor for reading image and image reading apparatus including the image sensor | |
EP1418089A3 (de) | Multifunktionales integriertes optisches System mit einer CMOS oder CCD Matrix | |
DK1175592T3 (da) | Positionsregistreringsanordning med hjælpemidler til fastlæggelse af tyngdekraftvektorens retning | |
DE50102545D1 (de) | Sensoranordnung zur bilderkennung | |
DE69826373D1 (de) | Signalverarbeitungssystem für einen Inertialsensor | |
EP1814314A3 (de) | Bildaufnahmevorrichtungen, Bildsensormodule und dazugehörige Verfahren | |
NL1015546A1 (nl) | CMOS beeldsensor en werkwijze voor het vervaardigen daarvan. | |
FR2824416B1 (fr) | Capteur pour environnement severe | |
TW200704925A (en) | Method for sensing a marking on a running web of material | |
EP1429168A3 (de) | Bilderfassungsvorrichtung und tragbares Terminal | |
EP1444519A4 (de) | Verfahren und vorrichtung zur unterscheidung von morbus crohn von ulzerativer colitis und anderen magen-darm-erkrankungen durch nachweis des vorhandenseins von antikörpern gegen saccharomyces cerevisiae in faeces |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |