ATE375002T1 - Magnetron-sputtervorrichtung - Google Patents

Magnetron-sputtervorrichtung

Info

Publication number
ATE375002T1
ATE375002T1 AT02777488T AT02777488T ATE375002T1 AT E375002 T1 ATE375002 T1 AT E375002T1 AT 02777488 T AT02777488 T AT 02777488T AT 02777488 T AT02777488 T AT 02777488T AT E375002 T1 ATE375002 T1 AT E375002T1
Authority
AT
Austria
Prior art keywords
target
magnetic field
primary target
primary
auxiliary
Prior art date
Application number
AT02777488T
Other languages
English (en)
Inventor
Dermot Patrick Monaghan
Victor Bellido-Gonzalez
Original Assignee
Dermot Patrick Monaghan
Victor Bellido-Gonzalez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dermot Patrick Monaghan, Victor Bellido-Gonzalez filed Critical Dermot Patrick Monaghan
Application granted granted Critical
Publication of ATE375002T1 publication Critical patent/ATE375002T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Valve Device For Special Equipments (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
AT02777488T 2001-11-07 2002-11-07 Magnetron-sputtervorrichtung ATE375002T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0126721.0A GB0126721D0 (en) 2001-11-07 2001-11-07 Ferromagnetic magnetron

Publications (1)

Publication Number Publication Date
ATE375002T1 true ATE375002T1 (de) 2007-10-15

Family

ID=9925317

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02777488T ATE375002T1 (de) 2001-11-07 2002-11-07 Magnetron-sputtervorrichtung

Country Status (10)

Country Link
US (1) US20050034980A1 (de)
EP (1) EP1449234B1 (de)
JP (1) JP2005509091A (de)
KR (1) KR20050044357A (de)
CN (1) CN1608306A (de)
AT (1) ATE375002T1 (de)
DE (1) DE60222799T2 (de)
GB (1) GB0126721D0 (de)
MX (1) MXPA04004350A (de)
WO (1) WO2003041113A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0608582D0 (en) * 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
JP5502442B2 (ja) 2009-02-26 2014-05-28 キヤノンアネルバ株式会社 マグネトロンスパッタカソード、マグネトロンスパッタ装置及び磁性デバイスの製造方法
CN111996504A (zh) * 2020-07-10 2020-11-27 包头稀土研究院 铁磁性靶材磁控溅射装置
CN111996505B (zh) * 2020-07-10 2023-07-14 包头稀土研究院 磁控溅射铁磁性靶材的装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
JPS58221275A (ja) * 1982-06-16 1983-12-22 Anelva Corp スパツタリング装置
US4414087A (en) * 1983-01-31 1983-11-08 Meckel Benjamin B Magnetically-assisted sputtering method for producing vertical recording media
EP0144572B1 (de) * 1983-12-05 1989-10-18 Leybold Aktiengesellschaft Magnetronkatode zum Zerstäuben ferromagnetischer Targets
JPH02194171A (ja) * 1989-01-20 1990-07-31 Ulvac Corp マグネトロンスパッタリング源
DE4135939A1 (de) * 1991-10-31 1993-05-06 Leybold Ag, 6450 Hanau, De Zerstaeubungskathode

Also Published As

Publication number Publication date
WO2003041113A1 (en) 2003-05-15
EP1449234A1 (de) 2004-08-25
JP2005509091A (ja) 2005-04-07
DE60222799T2 (de) 2008-07-17
MXPA04004350A (es) 2005-05-16
CN1608306A (zh) 2005-04-20
KR20050044357A (ko) 2005-05-12
GB0126721D0 (en) 2002-01-02
US20050034980A1 (en) 2005-02-17
EP1449234B1 (de) 2007-10-03
DE60222799D1 (de) 2007-11-15

Similar Documents

Publication Publication Date Title
WO2007015933A3 (en) Method and apparatus for sputtering onto large flat panels
DE69128195D1 (de) Ionenplattierung mittels magnetronsputtern
ATE47504T1 (de) Magnetronkatode zum zerstaeuben ferromagnetischer targets.
EP1553207A3 (de) Zweidimensionaler Rastermagnetron zur Zerstäubung von flachen Targets
TW200506083A (en) Sputter source, sputtering device, and sputtering method
WO2007131944A3 (de) Arcquelle und magnetanordnung
BR0116951B1 (pt) evaporador de arco com guia magnÉtico poderoso para alvos tendo uma grande Área de superfÍcie.
ATE47253T1 (de) Magnetronkatode zum zerstaeuben ferromagnetischer targets.
ATE68911T1 (de) Zerstaeubungskathode nach dem magnetronprinzip.
TW200724703A (en) Magnet structure body and cathode unit for magnetron sputtering apparatus and the magnetron sputtering apparatus
EP0447764A3 (en) Cathodic sputtering substrate coating device
TW200716776A (en) Spattering apparatus and film forming method
GB2051877A (en) Magnetically Enhanced Sputtering Device and Method
ATE375002T1 (de) Magnetron-sputtervorrichtung
WO2002021565A3 (en) Apparatus for magnetically scanning and/or switching a charged-particle beam
TW200702467A (en) Enhanced magnetron sputtering target
EP1221495A3 (de) Magnetronzerstäubungssystem und Verfahren zur Herstellung einer Maskenrohling mittels des Systems
US20020195336A1 (en) System for unbalanced magnetron sputtering with AC power
JPH0234780A (ja) マグネトロンスパッタ用磁気回路
JPH02194171A (ja) マグネトロンスパッタリング源
JP2003226965A (ja) スパッタリングターゲット
WO2005048284A3 (en) Rotating sputtering magnetron
RU2107971C1 (ru) Магнетронная распылительная система
JPS5747870A (en) Magnetron sputtering method for ferromagnetic material
JPS5780713A (en) Manufacture of magnetic thin film by sputtering

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties