ATE364901T1 - Laterale pin diode aus polysilizium und verfahren zur herstellung - Google Patents

Laterale pin diode aus polysilizium und verfahren zur herstellung

Info

Publication number
ATE364901T1
ATE364901T1 AT01310302T AT01310302T ATE364901T1 AT E364901 T1 ATE364901 T1 AT E364901T1 AT 01310302 T AT01310302 T AT 01310302T AT 01310302 T AT01310302 T AT 01310302T AT E364901 T1 ATE364901 T1 AT E364901T1
Authority
AT
Austria
Prior art keywords
pin diode
polysilicon
producing
lateral pin
diode made
Prior art date
Application number
AT01310302T
Other languages
English (en)
Inventor
David R Greenberg
Dale K Jadus
Seshardri Subbanna
Keith M Walter
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE364901T1 publication Critical patent/ATE364901T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
AT01310302T 2000-12-12 2001-12-10 Laterale pin diode aus polysilizium und verfahren zur herstellung ATE364901T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/734,624 US6426547B1 (en) 2000-12-12 2000-12-12 Lateral polysilicon pin diode and method for so fabricating

Publications (1)

Publication Number Publication Date
ATE364901T1 true ATE364901T1 (de) 2007-07-15

Family

ID=24952439

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01310302T ATE364901T1 (de) 2000-12-12 2001-12-10 Laterale pin diode aus polysilizium und verfahren zur herstellung

Country Status (6)

Country Link
US (1) US6426547B1 (de)
EP (1) EP1215733B1 (de)
CN (1) CN1205675C (de)
AT (1) ATE364901T1 (de)
DE (1) DE60128883T2 (de)
TW (1) TWI243485B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1137055A1 (de) * 2000-03-24 2001-09-26 Infineon Technologies AG Verfahren zur Herstellung einer Hochfrequenz-Halbleiterstruktur und Hochfrequenz-Halbleiterstruktur
US6794641B2 (en) * 2002-05-30 2004-09-21 Micromass Uk Limited Mass spectrometer
JP4241446B2 (ja) * 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
DE10344609B3 (de) * 2003-09-25 2005-07-21 Infineon Technologies Ag Hochfrequenzdiode
US6936895B2 (en) * 2003-10-09 2005-08-30 Chartered Semiconductor Manufacturing Ltd. ESD protection device
US7026211B1 (en) * 2004-03-08 2006-04-11 Advanced Micro Devices, Inc. Semiconductor component and method of manufacture
US7405465B2 (en) 2004-09-29 2008-07-29 Sandisk 3D Llc Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
KR100759682B1 (ko) * 2006-03-30 2007-09-17 삼성에스디아이 주식회사 유기 전계 발광표시장치
CN100552991C (zh) * 2006-09-27 2009-10-21 中国科学院半导体研究所 声子调控间接带隙半导体材料横向电注入发光器件
US7812370B2 (en) 2007-07-25 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
DE102007058003B4 (de) * 2007-12-03 2019-12-05 Infineon Technologies Ag Halbleiterbauelement, Sensorelement, Verwendung eines Halbleiterbauelements sowie Verfahren zur Abwehr von Lichtangriffen
US7833888B2 (en) * 2008-05-06 2010-11-16 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system employing grain size enlargement
US7834345B2 (en) 2008-09-05 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistors with superlattice channels
US8587075B2 (en) 2008-11-18 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with metal source
KR101239134B1 (ko) * 2008-12-10 2013-03-07 한국전자통신연구원 흡수 광변조기 및 그것의 제조 방법
WO2010080751A1 (en) * 2009-01-06 2010-07-15 Next Biometrics As Low noise reading architecture for active sensor arrays
CN102376775B (zh) * 2010-08-26 2014-04-16 上海华虹宏力半导体制造有限公司 BiCMOS工艺中的寄生PIN器件及制造方法
CN102403233B (zh) * 2011-12-12 2014-06-11 复旦大学 垂直沟道的隧穿晶体管的制造方法
CN103151393B (zh) * 2013-02-28 2015-04-15 溧阳市宏达电机有限公司 一种pin二极管的封装结构
CN103280397B (zh) * 2013-05-30 2015-09-23 中国电子科技集团公司第十三研究所 一种横向石墨烯pin结的制备方法
US10571631B2 (en) 2015-01-05 2020-02-25 The Research Foundation For The State University Of New York Integrated photonics including waveguiding material
CN106847901A (zh) * 2016-12-20 2017-06-13 西安科锐盛创新科技有限公司 多层全息天线中AlAs‑Ge‑AlAs结构基等离子pin二极管的制造方法
CN109599441B (zh) * 2018-12-29 2022-03-18 上海华力微电子有限公司 Soi二极管

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2268355B1 (de) 1974-04-16 1978-01-20 Thomson Csf
US4751193A (en) * 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
US5268310A (en) 1992-11-25 1993-12-07 M/A-Com, Inc. Method for making a mesa type PIN diode
JP3192546B2 (ja) * 1994-04-15 2001-07-30 シャープ株式会社 半導体装置およびその製造方法
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US5731619A (en) 1996-05-22 1998-03-24 International Business Machines Corporation CMOS structure with FETS having isolated wells with merged depletions and methods of making same
US5966605A (en) * 1997-11-07 1999-10-12 Advanced Micro Devices, Inc. Reduction of poly depletion in semiconductor integrated circuits
US5886374A (en) 1998-01-05 1999-03-23 Motorola, Inc. Optically sensitive device and method

Also Published As

Publication number Publication date
EP1215733A2 (de) 2002-06-19
EP1215733A3 (de) 2004-05-19
US20020070388A1 (en) 2002-06-13
TWI243485B (en) 2005-11-11
CN1205675C (zh) 2005-06-08
CN1357926A (zh) 2002-07-10
DE60128883D1 (de) 2007-07-26
EP1215733B1 (de) 2007-06-13
US6426547B1 (en) 2002-07-30
DE60128883T2 (de) 2008-02-14

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