ATE352123T1 - System und verfahren zur anpassung von elektrischen impedanzen - Google Patents

System und verfahren zur anpassung von elektrischen impedanzen

Info

Publication number
ATE352123T1
ATE352123T1 AT98948101T AT98948101T ATE352123T1 AT E352123 T1 ATE352123 T1 AT E352123T1 AT 98948101 T AT98948101 T AT 98948101T AT 98948101 T AT98948101 T AT 98948101T AT E352123 T1 ATE352123 T1 AT E352123T1
Authority
AT
Austria
Prior art keywords
matching
improved
mnb
mna
mnc
Prior art date
Application number
AT98948101T
Other languages
English (en)
Inventor
Wayne L Johnson
Richard Parsons
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE352123T1 publication Critical patent/ATE352123T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Plasma Technology (AREA)
  • Networks Using Active Elements (AREA)
  • Electrotherapy Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
AT98948101T 1997-09-17 1998-09-17 System und verfahren zur anpassung von elektrischen impedanzen ATE352123T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5917697P 1997-09-17 1997-09-17

Publications (1)

Publication Number Publication Date
ATE352123T1 true ATE352123T1 (de) 2007-02-15

Family

ID=22021304

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98948101T ATE352123T1 (de) 1997-09-17 1998-09-17 System und verfahren zur anpassung von elektrischen impedanzen

Country Status (7)

Country Link
EP (1) EP1023771B1 (de)
JP (1) JP2001516954A (de)
KR (1) KR100677012B1 (de)
CN (1) CN1129229C (de)
AT (1) ATE352123T1 (de)
DE (1) DE69836917D1 (de)
WO (1) WO1999014855A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265831B1 (en) 1999-03-31 2001-07-24 Lam Research Corporation Plasma processing method and apparatus with control of rf bias
TW584905B (en) 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US6677828B1 (en) * 2000-08-17 2004-01-13 Eni Technology, Inc. Method of hot switching a plasma tuner
US6657394B2 (en) * 2001-04-06 2003-12-02 Eni Technology, Inc. Reflection coefficient phase detector
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
KR100720989B1 (ko) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
JP4879548B2 (ja) * 2005-09-30 2012-02-22 株式会社ダイヘン 高周波電源装置
CN101494947B (zh) * 2008-01-23 2011-07-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种射频阻抗自动匹配的方法
JP4491029B2 (ja) * 2008-08-12 2010-06-30 東京エレクトロン株式会社 プラズマ処理装置及び高周波電力供給装置
CN102573261B (zh) * 2010-12-10 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 射频匹配方法及装置、等离子体设备
DE102011007597B4 (de) * 2011-04-18 2014-07-10 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Impendanzanpassung und Hochfrequenz-Leistungsversorgung
DE102011080035A1 (de) * 2011-07-28 2013-01-31 Hüttinger Elektronik Gmbh + Co. Kg Verfahren und Vorrichtung zum Schutz von an einen Hochfrequenzgenerator angeschlossenen passiven Komponenten
CN102420579A (zh) * 2011-11-16 2012-04-18 中微半导体设备(上海)有限公司 一种自动实现射频功率匹配的方法和系统
US9171699B2 (en) * 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9082589B2 (en) * 2012-10-09 2015-07-14 Novellus Systems, Inc. Hybrid impedance matching for inductively coupled plasma system
US9645193B2 (en) * 2012-10-23 2017-05-09 Keithley Instruments, Llc Impedance source ranging apparatus and method
CN105206494B (zh) * 2014-06-18 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 脉冲射频电源的阻抗匹配方法及等离子体设备的匹配方法
CN105826154B (zh) 2015-01-06 2017-12-19 北京北方华创微电子装备有限公司 针对脉冲射频电源的阻抗匹配方法及装置
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
JP6817889B2 (ja) * 2016-05-10 2021-01-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWM531596U (zh) * 2016-06-29 2016-11-01 Fairtech Corp 射頻（ｒｆ）匹配器定位裝置
CN108536628B (zh) * 2017-03-03 2021-09-17 联发科技（新加坡）私人有限公司 阻抗匹配电路与接口电路
CN111380332A (zh) * 2018-12-29 2020-07-07 中国科学院微电子研究所 一种具有功率自适应调节的微波干燥装置
CN111383946A (zh) * 2018-12-29 2020-07-07 中国科学院微电子研究所 一种纳米图形快速固化装置
KR20220106820A (ko) 2019-12-02 2022-07-29 램 리써치 코포레이션 Rf (radio-frequency) 보조된 플라즈마 생성시 임피던스 변환
JP7465657B2 (ja) 2019-12-27 2024-04-11 株式会社ダイヘン インピーダンス調整装置
JP7450387B2 (ja) 2019-12-27 2024-03-15 株式会社ダイヘン インピーダンス調整装置
US11994542B2 (en) 2020-03-27 2024-05-28 Lam Research Corporation RF signal parameter measurement in an integrated circuit fabrication chamber

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939167A1 (de) * 1979-08-21 1981-04-02 Coulter Systems Corp., Bedford, Mass. Vorrichtung und verfahren zur leistungszufuehrung an eine von dem entladungsplasma einer zerstaeubungsvorrichtung gebildeten last
US4621242A (en) * 1984-03-19 1986-11-04 The Perkin-Elmer Corporation R.F. impedance match control system
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
EP0713230B1 (de) * 1994-11-21 1998-01-28 Comet Technik AG Variabler Kondensator
CN2233660Y (zh) * 1995-05-05 1996-08-21 浙江大学 网格式射频等离子体发生器
US5793162A (en) * 1995-12-29 1998-08-11 Lam Research Corporation Apparatus for controlling matching network of a vacuum plasma processor and memory for same
US5654679A (en) * 1996-06-13 1997-08-05 Rf Power Products, Inc. Apparatus for matching a variable load impedance with an RF power generator impedance

Also Published As

Publication number Publication date
EP1023771A4 (de) 2004-05-26
JP2001516954A (ja) 2001-10-02
KR20010015590A (ko) 2001-02-26
KR100677012B1 (ko) 2007-01-31
WO1999014855A1 (en) 1999-03-25
CN1270711A (zh) 2000-10-18
EP1023771A1 (de) 2000-08-02
EP1023771B1 (de) 2007-01-17
DE69836917D1 (de) 2007-03-08
CN1129229C (zh) 2003-11-26

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