ATE350429T1 - Verfahren zur gesteuerten abscheidung von schwefelarten - Google Patents

Verfahren zur gesteuerten abscheidung von schwefelarten

Info

Publication number
ATE350429T1
ATE350429T1 AT04705034T AT04705034T ATE350429T1 AT E350429 T1 ATE350429 T1 AT E350429T1 AT 04705034 T AT04705034 T AT 04705034T AT 04705034 T AT04705034 T AT 04705034T AT E350429 T1 ATE350429 T1 AT E350429T1
Authority
AT
Austria
Prior art keywords
substrate
thin film
sulfur
source material
bearing
Prior art date
Application number
AT04705034T
Other languages
English (en)
Inventor
Yongbao Xin
James Alexander Robert Stiles
Chi Kit Leung
Terry Hunt
Joe Acchione
Original Assignee
Ifire Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ifire Technology Corp filed Critical Ifire Technology Corp
Application granted granted Critical
Publication of ATE350429T1 publication Critical patent/ATE350429T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7734Aluminates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623Sulfides, selenides or tellurides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/548Controlling the composition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Surface Treatment Of Glass (AREA)
AT04705034T 2003-01-30 2004-01-26 Verfahren zur gesteuerten abscheidung von schwefelarten ATE350429T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44354003P 2003-01-30 2003-01-30

Publications (1)

Publication Number Publication Date
ATE350429T1 true ATE350429T1 (de) 2007-01-15

Family

ID=32825344

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04705034T ATE350429T1 (de) 2003-01-30 2004-01-26 Verfahren zur gesteuerten abscheidung von schwefelarten

Country Status (10)

Country Link
US (1) US7811634B2 (de)
EP (1) EP1587894B1 (de)
JP (1) JP2006516663A (de)
KR (1) KR20050110623A (de)
CN (1) CN100360637C (de)
AT (1) ATE350429T1 (de)
CA (1) CA2512395A1 (de)
DE (1) DE602004004076T2 (de)
TW (1) TW200420740A (de)
WO (1) WO2004067676A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8057856B2 (en) * 2004-03-15 2011-11-15 Ifire Ip Corporation Method for gettering oxygen and water during vacuum deposition of sulfide films
US8193705B2 (en) 2005-11-02 2012-06-05 Ifire Ip Corporation Laminated conformal seal for electroluminescent displays
RU2428505C2 (ru) * 2009-10-12 2011-09-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) СПОСОБ ПОЛУЧЕНИЯ ТОНКИХ ПЛЕНОК НА ОСНОВЕ EuS
EP2360289A1 (de) * 2010-02-23 2011-08-24 Saint-Gobain Glass France Vorrichtung und Verfahren zum Abscheiden einer aus mindestens zwei Komponenten bestehenden Schicht auf einem Gegenstand
GB2493022B (en) * 2011-07-21 2014-04-23 Ilika Technologies Ltd Vapour deposition process for the preparation of a phosphate compound
EP3715499A1 (de) * 2019-03-29 2020-09-30 Picosun Oy Substratbeschichtung
CN114113174B (zh) 2021-12-17 2023-11-03 西南石油大学 基于x射线的硫沉积岩样溶硫剂解堵效果测试装置及方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652067A (en) 1992-09-10 1997-07-29 Toppan Printing Co., Ltd. Organic electroluminescent device
US5294368A (en) 1992-12-31 1994-03-15 Osram Sylvania Inc. Method of making a composite electroluminescent phosphor
JPH07272849A (ja) 1994-03-31 1995-10-20 Nippondenso Co Ltd 薄膜el表示器とその製造方法
AUPM967194A0 (en) * 1994-11-25 1994-12-22 University Of South Australia Surface modification of kaolinite
US5725801A (en) 1995-07-05 1998-03-10 Adrian H. Kitai Doped amorphous and crystalline gallium oxides, alkaline earth gallates and doped zinc germanate phosphors as electroluminescent materials
US5788882A (en) 1996-07-03 1998-08-04 Adrian H. Kitai Doped amorphous and crystalline alkaline earth gallates as electroluminescent materials
WO1998037165A1 (en) 1997-02-24 1998-08-27 Superior Micropowders Llc Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same
US6241477B1 (en) * 1999-08-25 2001-06-05 Applied Materials, Inc. In-situ getter in process cavity of processing chamber
TW576873B (en) * 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate
US6583434B2 (en) 2000-04-26 2003-06-24 Agfa-Gevaert System for digital radiography and dosimetry
US20020122895A1 (en) 2000-09-14 2002-09-05 Cheong Dan Daeweon Magnesium barium thioaluminate and related phosphor materials
US6610352B2 (en) * 2000-12-22 2003-08-26 Ifire Technology, Inc. Multiple source deposition process
KR100685917B1 (ko) 2000-12-27 2007-02-22 엘지.필립스 엘시디 주식회사 전계발광소자 및 그 제조방법
KR100731033B1 (ko) 2000-12-27 2007-06-22 엘지.필립스 엘시디 주식회사 전계발광소자 및 그 제조방법
US6627251B2 (en) * 2001-04-19 2003-09-30 Tdk Corporation Phosphor thin film, preparation method, and EL panel
US6447654B1 (en) 2001-05-29 2002-09-10 Ifire Technology Inc. Single source sputtering of thioaluminate phosphor films
US6686062B2 (en) 2001-06-13 2004-02-03 Ifire Technology Inc. Magnesium calcium thioaluminate phosphor
JP3704068B2 (ja) * 2001-07-27 2005-10-05 ザ ウエステイム コーポレイション Elパネル
US6878973B2 (en) * 2001-08-23 2005-04-12 Lumileds Lighting U.S., Llc Reduction of contamination of light emitting devices

Also Published As

Publication number Publication date
EP1587894A1 (de) 2005-10-26
WO2004067676A1 (en) 2004-08-12
CA2512395A1 (en) 2004-08-12
CN100360637C (zh) 2008-01-09
JP2006516663A (ja) 2006-07-06
US20050042376A1 (en) 2005-02-24
TW200420740A (en) 2004-10-16
DE602004004076D1 (de) 2007-02-15
DE602004004076T2 (de) 2007-11-15
EP1587894B1 (de) 2007-01-03
US7811634B2 (en) 2010-10-12
CN1745158A (zh) 2006-03-08
KR20050110623A (ko) 2005-11-23

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