ATE349559T1 - Ultraschall-füllstandmessung in einem chemischen nachfüllsystem - Google Patents

Ultraschall-füllstandmessung in einem chemischen nachfüllsystem

Info

Publication number
ATE349559T1
ATE349559T1 AT99123238T AT99123238T ATE349559T1 AT E349559 T1 ATE349559 T1 AT E349559T1 AT 99123238 T AT99123238 T AT 99123238T AT 99123238 T AT99123238 T AT 99123238T AT E349559 T1 ATE349559 T1 AT E349559T1
Authority
AT
Austria
Prior art keywords
chemical
level measurement
ultrasonic level
refilling system
reservoir
Prior art date
Application number
AT99123238T
Other languages
English (en)
Inventor
Robert Sam Zorich
George Oleg Voloshin
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE349559T1 publication Critical patent/ATE349559T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F13/00Apparatus for measuring by volume and delivering fluids or fluent solid materials, not provided for in the preceding groups
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
AT99123238T 1998-11-30 1999-11-26 Ultraschall-füllstandmessung in einem chemischen nachfüllsystem ATE349559T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20100598A 1998-11-30 1998-11-30

Publications (1)

Publication Number Publication Date
ATE349559T1 true ATE349559T1 (de) 2007-01-15

Family

ID=22744091

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99123238T ATE349559T1 (de) 1998-11-30 1999-11-26 Ultraschall-füllstandmessung in einem chemischen nachfüllsystem

Country Status (7)

Country Link
EP (1) EP1006219B1 (de)
JP (1) JP2000167381A (de)
KR (1) KR100297441B1 (de)
AT (1) ATE349559T1 (de)
DE (1) DE69934565T2 (de)
IL (2) IL133102A0 (de)
TW (1) TW413729B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1521948A1 (de) 2002-07-17 2005-04-13 Epichem Limited Verfahren und vorrichtung zur füllstandsüberwachung in einem behälter
ITMI20021692A1 (it) * 2002-07-30 2002-10-29 Indena Spa Polisaccaride di echinacea angustifolia.
GB2432371B (en) 2005-11-17 2011-06-15 Epichem Ltd Improved bubbler for the transportation of substances by a carrier gas
WO2011053505A1 (en) 2009-11-02 2011-05-05 Sigma-Aldrich Co. Evaporator
CN102791383B (zh) * 2010-01-06 2017-11-14 恩特格里斯公司 具有除气和感测能力的液体分配系统
US8959998B2 (en) 2013-05-15 2015-02-24 Air Products And Chemicals, Inc. Ultrasonic liquid level sensing systems
US10151618B2 (en) 2014-01-24 2018-12-11 Versum Materials Us, Llc Ultrasonic liquid level sensing systems
TWI651517B (zh) * 2018-03-02 2019-02-21 國立臺灣大學 串接式超音波水位偵測模組及水位計
US11378436B2 (en) 2018-12-10 2022-07-05 Carrier Corporation Adjustable liquid level indicators
KR20200130121A (ko) * 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
TWI779280B (zh) * 2019-06-03 2022-10-01 日商英達斯特股份有限公司 微細物除去系統
US20210123134A1 (en) * 2019-10-24 2021-04-29 Entegris, Inc. Sublimation ampoule with level sensing
CN113930738B (zh) * 2020-06-29 2023-09-12 宝山钢铁股份有限公司 一种真空镀膜用的金属蒸汽调制装置及其调制方法
CN112781677A (zh) * 2020-12-30 2021-05-11 济南市第三人民医院 一种医院检验科实验室试剂用量监控装置
KR102565527B1 (ko) * 2021-03-11 2023-08-14 포이스주식회사 초음파를 이용한 반도체 제조용 화학약품 잔량 관리시스템

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545245A (en) * 1983-11-09 1985-10-08 Simmonds Precision Products, Inc. Liquid level sensor using sonic methods
US4859375A (en) * 1986-12-29 1989-08-22 Air Products And Chemicals, Inc. Chemical refill system
US4901245A (en) * 1987-12-01 1990-02-13 Moore Technologies, Inc. Nonintrusive acoustic liquid level sensor
US5383574A (en) * 1993-07-19 1995-01-24 Microbar Sytems, Inc. System and method for dispensing liquid from storage containers

Also Published As

Publication number Publication date
EP1006219B1 (de) 2006-12-27
KR20000035684A (ko) 2000-06-26
IL133102A0 (en) 2001-03-19
EP1006219A1 (de) 2000-06-07
DE69934565T2 (de) 2007-10-04
KR100297441B1 (ko) 2001-10-29
IL150315A (en) 2010-12-30
DE69934565D1 (de) 2007-02-08
JP2000167381A (ja) 2000-06-20
TW413729B (en) 2000-12-01

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties