ATE342585T1 - Herstellungsverfahren für pyroelektrische sensoren mit einer elektrische polung benötigenden pyroelektrischen dünnschicht - Google Patents

Herstellungsverfahren für pyroelektrische sensoren mit einer elektrische polung benötigenden pyroelektrischen dünnschicht

Info

Publication number
ATE342585T1
ATE342585T1 AT01967131T AT01967131T ATE342585T1 AT E342585 T1 ATE342585 T1 AT E342585T1 AT 01967131 T AT01967131 T AT 01967131T AT 01967131 T AT01967131 T AT 01967131T AT E342585 T1 ATE342585 T1 AT E342585T1
Authority
AT
Austria
Prior art keywords
electrodes
resistances
sensors
pyroelectric
pixels
Prior art date
Application number
AT01967131T
Other languages
English (en)
Inventor
Bert Willing
Paul Muralt
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech filed Critical Ecole Polytech
Application granted granted Critical
Publication of ATE342585T1 publication Critical patent/ATE342585T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AT01967131T 2000-08-04 2001-07-06 Herstellungsverfahren für pyroelektrische sensoren mit einer elektrische polung benötigenden pyroelektrischen dünnschicht ATE342585T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00116868A EP1178545A1 (de) 2000-08-04 2000-08-04 Herstellung eines pyroelektrischen Sensors mit einer pyroelektrischen Dünnschicht die polarisiert werden muss

Publications (1)

Publication Number Publication Date
ATE342585T1 true ATE342585T1 (de) 2006-11-15

Family

ID=8169454

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01967131T ATE342585T1 (de) 2000-08-04 2001-07-06 Herstellungsverfahren für pyroelektrische sensoren mit einer elektrische polung benötigenden pyroelektrischen dünnschicht

Country Status (8)

Country Link
US (1) US6727113B2 (de)
EP (2) EP1178545A1 (de)
JP (1) JP2004506332A (de)
CN (1) CN1446381A (de)
AT (1) ATE342585T1 (de)
AU (1) AU2001287587A1 (de)
DE (1) DE60123804T2 (de)
WO (1) WO2002013283A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405001B2 (en) 2005-03-24 2008-07-29 3M Innovative Properties Company Surface modified nanoparticle and method of preparing same
US20110193066A1 (en) * 2009-08-13 2011-08-11 E. I. Du Pont De Nemours And Company Current limiting element for pixels in electronic devices
US20140318278A1 (en) * 2013-04-24 2014-10-30 Honeywell International Inc. Particle imaging utilizing a filter
FR3090209B1 (fr) * 2018-12-18 2021-01-15 Commissariat Energie Atomique Procede de fabrication d’un dispositif comprenant un materiau acquerant une propriete electrique apres avoir ete soumis a une polarisation electrique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2670325B1 (fr) * 1990-12-11 1993-01-22 Thomson Composants Militaires Detecteur infrarouge monolithique a materiau pyroelectrique.
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
JP2987476B2 (ja) 1992-03-30 1999-12-06 株式会社堀場製作所 焦電素子の製造方法
US5413667A (en) * 1992-11-04 1995-05-09 Matsushita Electric Industrial Co., Ltd. Pyroelectric infrared detector fabricating method
US5602043A (en) * 1995-01-03 1997-02-11 Texas Instruments Incorporated Monolithic thermal detector with pyroelectric film and method
US5627082A (en) * 1995-03-29 1997-05-06 Texas Instruments Incorporated High thermal resistance backfill material for hybrid UFPA's
US6020216A (en) * 1996-08-30 2000-02-01 Texas Instruments Incorporated Thermal detector with stress-aligned thermally sensitive element and method

Also Published As

Publication number Publication date
CN1446381A (zh) 2003-10-01
EP1307929A1 (de) 2003-05-07
EP1307929B1 (de) 2006-10-11
WO2002013283A1 (fr) 2002-02-14
EP1178545A1 (de) 2002-02-06
US20030176004A1 (en) 2003-09-18
AU2001287587A1 (en) 2002-02-18
US6727113B2 (en) 2004-04-27
DE60123804T2 (de) 2007-10-11
JP2004506332A (ja) 2004-02-26
DE60123804D1 (de) 2006-11-23

Similar Documents

Publication Publication Date Title
TW344903B (en) Wafer fabricated electroacoustic transducer
EP0671629A3 (de) Beschleunigungssensor und Verfahren zu seiner Herstellung
ES8502290A1 (es) Un metodo de eliminar un paso de corriente de cortocircuito
ES8602304A1 (es) Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaico
ATE342585T1 (de) Herstellungsverfahren für pyroelektrische sensoren mit einer elektrische polung benötigenden pyroelektrischen dünnschicht
CN101068032B (zh) 半导体变形测量仪及其制造方法
ATE336078T1 (de) Fotoelektrische sensoranordnung und herstellungsverfahren dafür
KR870009484A (ko) 반도체 이미지센서
US4808833A (en) Image sensors using a photo-sensing element array and matrix wires methods of manufacturing same
WO1996036071A3 (en) Method of manufacturing a semiconductor device suitable for surface mounting
US4546243A (en) Elongated light receiving element assembly
JPH06207871A (ja) 圧力センサ
JP2901253B2 (ja) 圧力センサ
US4906918A (en) Temperature detector having a pyroelectric device and impedance conversion
SU1679388A1 (ru) Датчик термоанемометра
JPH0495741A (ja) 圧力センサ
JPS6357953B2 (de)
WO2012128593A2 (ko) 매립형 전극을 구비한 센서 및 그 제조방법
JPS6134970A (ja) フオトセンサ
JP3219253B2 (ja) ガスセンサ
JPH02326A (ja) 半導体装置
JPS6225433A (ja) 半導体素子特性測定装置
JPS59198775A (ja) 太陽電池
KR100329807B1 (ko) 반도체식 가스 센서의 전극 구조
JPH0469775U (de)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties