ATE318444T1 - Flash gerät mit im-gerät-leistungsversorgung oder on-chip-leistungsversorgung - Google Patents

Flash gerät mit im-gerät-leistungsversorgung oder on-chip-leistungsversorgung

Info

Publication number
ATE318444T1
ATE318444T1 AT02784712T AT02784712T ATE318444T1 AT E318444 T1 ATE318444 T1 AT E318444T1 AT 02784712 T AT02784712 T AT 02784712T AT 02784712 T AT02784712 T AT 02784712T AT E318444 T1 ATE318444 T1 AT E318444T1
Authority
AT
Austria
Prior art keywords
power supply
signal
capacitor
charge
block
Prior art date
Application number
AT02784712T
Other languages
English (en)
Inventor
Rajesh Sundaram
Jahanshir Javanifard
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE318444T1 publication Critical patent/ATE318444T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Studio Devices (AREA)
  • Power Sources (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Microcomputers (AREA)
  • Stroboscope Apparatuses (AREA)
AT02784712T 2001-12-18 2002-12-02 Flash gerät mit im-gerät-leistungsversorgung oder on-chip-leistungsversorgung ATE318444T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/026,401 US6639864B2 (en) 2001-12-18 2001-12-18 Flash device operating from a power-supply-in-package (PSIP) or from a power supply on chip

Publications (1)

Publication Number Publication Date
ATE318444T1 true ATE318444T1 (de) 2006-03-15

Family

ID=21831625

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02784712T ATE318444T1 (de) 2001-12-18 2002-12-02 Flash gerät mit im-gerät-leistungsversorgung oder on-chip-leistungsversorgung

Country Status (9)

Country Link
US (1) US6639864B2 (de)
EP (1) EP1456853B1 (de)
KR (1) KR100737038B1 (de)
CN (1) CN1606784B (de)
AT (1) ATE318444T1 (de)
AU (1) AU2002346640A1 (de)
DE (1) DE60209373T2 (de)
MY (1) MY122936A (de)
WO (1) WO2003052567A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903994B1 (en) * 2003-11-14 2005-06-07 Micron Technology, Inc. Device, system and method for reducing power in a memory device during standby modes
JP2007133729A (ja) * 2005-11-11 2007-05-31 Nec Electronics Corp 電子制御装置とその制御方法
US7702935B2 (en) * 2006-01-25 2010-04-20 Apple Inc. Reporting flash memory operating voltages
US20070174641A1 (en) * 2006-01-25 2007-07-26 Cornwell Michael J Adjusting power supplies for data storage devices
US7861122B2 (en) * 2006-01-27 2010-12-28 Apple Inc. Monitoring health of non-volatile memory
TWI360129B (en) * 2006-09-29 2012-03-11 Sandisk Corp Method of operating a removable nonvolatile memory
US7675802B2 (en) * 2006-09-29 2010-03-09 Sandisk Corporation Dual voltage flash memory card
US7656735B2 (en) * 2006-09-29 2010-02-02 Sandisk Corporation Dual voltage flash memory methods
KR100816119B1 (ko) * 2006-12-28 2008-03-21 주식회사 하이닉스반도체 멀티 다이 패키지 장치
US7913032B1 (en) 2007-04-25 2011-03-22 Apple Inc. Initiating memory wear leveling
US20080288712A1 (en) 2007-04-25 2008-11-20 Cornwell Michael J Accessing metadata with an external host
US20090058504A1 (en) * 2007-09-04 2009-03-05 International Business Machines Corporation Self-powered voltage islands on an integrated circuit
IT1400747B1 (it) * 2010-06-30 2013-07-02 St Microelectronics Srl Riduzione di consumo di potenza di fondo di dispositivi elettronici
US9424938B2 (en) 2011-06-09 2016-08-23 Micron Technology, Inc. Reduced voltage nonvolatile flash memory
US8565040B1 (en) * 2012-05-17 2013-10-22 Elite Semiconductor Memory Technology Inc. Voltage regulator circuit
US10656665B2 (en) * 2018-06-15 2020-05-19 Nxp Usa, Inc. Power management for logic state retention
CN109004923A (zh) * 2018-08-28 2018-12-14 深圳市新国都技术股份有限公司 时序控制电路
US10482979B1 (en) 2018-08-31 2019-11-19 Micron Technology, Inc. Capacitive voltage modifier for power management
US10453541B1 (en) * 2018-08-31 2019-10-22 Micron Technology, Inc. Capacitive voltage divider for power management

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2444367A1 (fr) * 1978-12-12 1980-07-11 Thomson Csf Procede de filtrage d'un signal electrique par transfert de charges dans un semi-conducteur et filtre a capacites commutees utilisant un tel procede
US4553047A (en) * 1983-01-06 1985-11-12 International Business Machines Corporation Regulator for substrate voltage generator
IT1225608B (it) * 1988-07-06 1990-11-22 Sgs Thomson Microelectronics Regolazione della tensione prodotta da un moltiplicatore di tensione.
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
US5303190A (en) * 1992-10-27 1994-04-12 Motorola, Inc. Static random access memory resistant to soft error
US5442586A (en) 1993-09-10 1995-08-15 Intel Corporation Method and apparatus for controlling the output current provided by a charge pump circuit
US5422586A (en) * 1993-09-10 1995-06-06 Intel Corporation Apparatus for a two phase bootstrap charge pump
US5687116A (en) * 1996-10-09 1997-11-11 Programmable Microelectronics Corp. Programming pulse ramp control circuit
JP3156618B2 (ja) * 1997-01-30 2001-04-16 日本電気株式会社 不揮発性半導体記憶装置
TW423162B (en) * 1997-02-27 2001-02-21 Toshiba Corp Power voltage supplying circuit and semiconductor memory including the same
US6160440A (en) * 1998-09-25 2000-12-12 Intel Corporation Scaleable charge pump for use with a low voltage power supply

Also Published As

Publication number Publication date
WO2003052567A3 (en) 2004-03-11
KR20040062998A (ko) 2004-07-09
EP1456853B1 (de) 2006-02-22
AU2002346640A1 (en) 2003-06-30
EP1456853A2 (de) 2004-09-15
US6639864B2 (en) 2003-10-28
DE60209373T2 (de) 2006-10-19
CN1606784A (zh) 2005-04-13
DE60209373D1 (de) 2006-04-27
KR100737038B1 (ko) 2007-07-09
AU2002346640A8 (en) 2003-06-30
US20030112691A1 (en) 2003-06-19
WO2003052567A2 (en) 2003-06-26
CN1606784B (zh) 2011-01-19
MY122936A (en) 2006-05-31

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Legal Events

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