ATE314753T1 - Verbesserter zweistufiger verstärker mit grosser bandbreite mit dioden in der parallelrückkopplungsstruktur - Google Patents

Verbesserter zweistufiger verstärker mit grosser bandbreite mit dioden in der parallelrückkopplungsstruktur

Info

Publication number
ATE314753T1
ATE314753T1 AT03766121T AT03766121T ATE314753T1 AT E314753 T1 ATE314753 T1 AT E314753T1 AT 03766121 T AT03766121 T AT 03766121T AT 03766121 T AT03766121 T AT 03766121T AT E314753 T1 ATE314753 T1 AT E314753T1
Authority
AT
Austria
Prior art keywords
diodes
transistor
collector
supply voltage
emitter
Prior art date
Application number
AT03766121T
Other languages
English (en)
Inventor
Bertrand Gabillard
Philippe Res De La Daup Girard
Michel Rivier
Fabrice Voisin
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE314753T1 publication Critical patent/ATE314753T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
AT03766121T 2002-07-26 2003-06-13 Verbesserter zweistufiger verstärker mit grosser bandbreite mit dioden in der parallelrückkopplungsstruktur ATE314753T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02368082 2002-07-26
PCT/EP2003/007133 WO2004013959A1 (en) 2002-07-26 2003-06-13 Improved 2-stage large bandwidth amplifier using diodes in the parallel feedback structure

Publications (1)

Publication Number Publication Date
ATE314753T1 true ATE314753T1 (de) 2006-01-15

Family

ID=31197993

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03766121T ATE314753T1 (de) 2002-07-26 2003-06-13 Verbesserter zweistufiger verstärker mit grosser bandbreite mit dioden in der parallelrückkopplungsstruktur

Country Status (9)

Country Link
US (1) US6861908B2 (de)
EP (1) EP1540816B1 (de)
JP (1) JP4072156B2 (de)
KR (1) KR100724823B1 (de)
CN (1) CN100411301C (de)
AT (1) ATE314753T1 (de)
AU (1) AU2003250884A1 (de)
DE (1) DE60303046T2 (de)
WO (1) WO2004013959A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946912B2 (en) * 2003-10-21 2005-09-20 Northrop Grumman Corporation MMIC distributed amplifier gate control using active bias
KR100639907B1 (ko) 2004-11-20 2006-10-30 진옥상 액티브레지스터

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3824556C2 (de) * 1988-07-20 1994-01-27 Telefunken Microelectron Symmetrische Eingangsschaltung für Hochfrequenzverstärker
JPH0558244A (ja) * 1991-08-28 1993-03-09 Toyota Motor Corp サイドエアバツグ装置
CN1035298C (zh) * 1991-12-29 1997-06-25 张小玲 晶体管串联-并联反馈宽频带放大器
US5245222A (en) 1992-02-28 1993-09-14 Sgs-Thomson Microelectronics, Inc. Method and apparatus for buffering electrical signals
US5446414A (en) * 1994-09-27 1995-08-29 Maxim Integrated Products Simple high speed precision transconductance amplifier circuits
FR2763183A1 (fr) * 1997-05-07 1998-11-13 Philips Electronics Nv Dispositif incluant un circuit amplificateur large-bande

Also Published As

Publication number Publication date
US6861908B2 (en) 2005-03-01
US20040263258A1 (en) 2004-12-30
KR100724823B1 (ko) 2007-06-04
CN100411301C (zh) 2008-08-13
JP2006515473A (ja) 2006-05-25
KR20050029200A (ko) 2005-03-24
JP4072156B2 (ja) 2008-04-09
DE60303046D1 (de) 2006-02-02
AU2003250884A1 (en) 2004-02-23
CN1672324A (zh) 2005-09-21
WO2004013959A1 (en) 2004-02-12
DE60303046T2 (de) 2006-07-27
EP1540816B1 (de) 2005-12-28
EP1540816A1 (de) 2005-06-15

Similar Documents

Publication Publication Date Title
CN100486108C (zh) 亚微型自偏压射地-基地射频功率放大器
US5475343A (en) Class AB complementary output stage
KR920001828A (ko) 적분 회로
CN106208980A (zh) 一种射频功率放大器偏置电路及其实现方法
IT9019769A1 (it) Amplificatore a basso rumore e alta impedenza d'ingresso, particolarmente per microfoni
DE602004031948D1 (de) Temperaturunempfindliche vorspannschaltung für hochleistungsverstärker
US7501893B2 (en) Variable gain amplifier circuit
KR970068131A (ko) 저잡음 증폭기
US5430337A (en) Transconductor stage
ATE314753T1 (de) Verbesserter zweistufiger verstärker mit grosser bandbreite mit dioden in der parallelrückkopplungsstruktur
WO2002051001A3 (en) A bias circuit for a low voltage differential circuit
ITVA990010A1 (it) Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione indut
GB1516190A (en) Wideband transistor amplifier
JPH04307804A (ja) 単位利得最終段
CN107896096A (zh) 采样保持电路前端宽带放大器
KR920017349A (ko) 저 저항 교류 전압원용 증폭단
CA1319178C (en) Variable-gain ac amplifier
JPH0578205B2 (de)
US7218174B2 (en) Delay circuit and method therefor
CN107017876B (zh) 高频程控容性阻抗电路及测量装置
US5365198A (en) Wideband amplifier circuit using npn transistors
CN217689889U (zh) 一种电压跟随器
RU2374757C1 (ru) Каскодный дифференциальный усилитель
Gupta A study on current conveyors and their applications
US10291228B1 (en) Current mode logic driver with level shifter

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties