ATE300035T1 - Element mit schichtstruktur und stromorientierungsmittel - Google Patents

Element mit schichtstruktur und stromorientierungsmittel

Info

Publication number
ATE300035T1
ATE300035T1 AT99910623T AT99910623T ATE300035T1 AT E300035 T1 ATE300035 T1 AT E300035T1 AT 99910623 T AT99910623 T AT 99910623T AT 99910623 T AT99910623 T AT 99910623T AT E300035 T1 ATE300035 T1 AT E300035T1
Authority
AT
Austria
Prior art keywords
layer structure
current
main faces
orientor
zone
Prior art date
Application number
AT99910623T
Other languages
English (en)
Inventor
Kars-Michiel H Lenssen
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE300035T1 publication Critical patent/ATE300035T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1659Cell access
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1673Reading or sensing circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R15/00Magnetostrictive transducers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Measuring Magnetic Variables (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Thin Magnetic Films (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Secondary Cells (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
AT99910623T 1998-04-24 1999-04-12 Element mit schichtstruktur und stromorientierungsmittel ATE300035T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP98201343 1998-04-24
PCT/IB1999/000643 WO1999056074A2 (en) 1998-04-24 1999-04-12 Element comprising a layer structure and a current-directing means

Publications (1)

Publication Number Publication Date
ATE300035T1 true ATE300035T1 (de) 2005-08-15

Family

ID=8233649

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99910623T ATE300035T1 (de) 1998-04-24 1999-04-12 Element mit schichtstruktur und stromorientierungsmittel

Country Status (7)

Country Link
US (1) US6215301B1 (de)
EP (1) EP0991913B1 (de)
JP (1) JP2002511198A (de)
KR (1) KR100733857B1 (de)
AT (1) ATE300035T1 (de)
DE (1) DE69926191T2 (de)
WO (1) WO1999056074A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727696B2 (en) * 1998-03-06 2004-04-27 Baker Hughes Incorporated Downhole NMR processing
US7301338B2 (en) * 2001-08-13 2007-11-27 Baker Hughes Incorporated Automatic adjustment of NMR pulse sequence to optimize SNR based on real time analysis
US7068530B2 (en) * 2002-12-27 2006-06-27 Tdk Corporation Magnetoresistive effect element and memory device using the same
JP4596753B2 (ja) * 2003-06-26 2010-12-15 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッドおよび磁気記録再生装置
US7196516B2 (en) * 2004-08-16 2007-03-27 Baker Hughes Incorporated Correction of NMR artifacts due to constant-velocity axial motion and spin-lattice relaxation
US7173841B2 (en) * 2004-12-03 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic memory array

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024489A (en) * 1975-11-18 1977-05-17 International Business Machines Corporation Magnetoresistive sandwich including sensor electrically parallel with electrical shunt and magnetic biasing layers
US5432373A (en) * 1992-12-15 1995-07-11 Bell Communications Research, Inc. Magnetic spin transistor
FR2702919B1 (fr) 1993-03-19 1995-05-12 Thomson Csf Transducteur magnétorésistif et procédé de réalisation.
JPH10503883A (ja) * 1994-06-18 1998-04-07 ザ ユニヴァーシティ オブ シェフィールド 磁場応答デバイス
EP0731969B1 (de) * 1994-10-05 1999-12-01 Koninklijke Philips Electronics N.V. Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält
US5576914A (en) 1994-11-14 1996-11-19 Read-Rite Corporation Compact read/write head having biased GMR element
DE19534856A1 (de) * 1995-09-20 1997-03-27 Forschungszentrum Juelich Gmbh Digitale Speichereinrichtung für Lese- und Schreiboperationen sowie ein Verfahren zu deren Herstellung
US5627704A (en) * 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure

Also Published As

Publication number Publication date
DE69926191T2 (de) 2006-06-01
WO1999056074A2 (en) 1999-11-04
WO1999056074A3 (en) 2000-02-03
US6215301B1 (en) 2001-04-10
KR20010014090A (ko) 2001-02-26
DE69926191D1 (de) 2005-08-25
EP0991913B1 (de) 2005-07-20
JP2002511198A (ja) 2002-04-09
KR100733857B1 (ko) 2007-06-29
EP0991913A2 (de) 2000-04-12

Similar Documents

Publication Publication Date Title
TW346683B (en) Semiconductor device and process for producing the same
TW336347B (en) Semiconductor device, method of manufacturing the same
EP0813246A3 (de) Halbleiteranordnung mit zwei Halbleitersubstraten
TW350072B (en) Chip network resistor and the manufacturing method
TW350135B (en) Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same
TW337035B (en) Semiconductor device and method of manufacturing the same
WO2002017387A3 (en) Conductive material patterning methods
DE69720249D1 (de) Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähte
TW337030B (en) Multi-stage buried wiring structure and the manufacturing method for Ics
TW332319B (en) The semiconductor apparatus with planarization surface and its producing method
WO1999039371A3 (fr) PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
DE59610181D1 (de) Optoelektronisches sensor-bauelement
EP0368246A3 (de) Mit einer Schottky-Sperrschicht versehene, bipolare Halbleiteranordnung mit isolierter Steuerelektrode und Verfahren zu deren Herstellung
EP0866505A3 (de) Potentialtopf-Halbleiterbauelement und dessen Herstellungsverfahren
KR910008872A (ko) 반도체 소자와 그 제조방법
ATE217424T1 (de) Substrat mit gerichteter leitfähigkeit senkrecht zu seiner oberfläche, vorrichtungen mit einem solchen substrat und verfahren zur herstellung eines solchen substrates
ATE300035T1 (de) Element mit schichtstruktur und stromorientierungsmittel
TW357418B (en) Column grid array for semiconductor packaging and method
DE69903167D1 (de) Sicherheitsdokumente und substrate dafür
TW356587B (en) Semiconductor device having interlayer insulator and the method for fabricating thereof
FI20000657A (fi) Menetelmä sähköäjohtavan liitoksen muodostamiseksi
TW347577B (en) Bottom electrode structure for integrated circuit capacitors and method of making the same
EP0365854A3 (de) Halbleiteranordnung mit einer Mehrschicht-Leiterstruktur
WO2002071482A3 (de) Hohlraumstruktur in einer integrierten schaltung und verfahren zum herstellen einer hohlraumstruktur in einer integrierten schaltung
ATE190755T1 (de) Hochtemperatur-brennstoffzelle mit wenigstens einer elektrisch isolierenden schicht und verfahren zum herstellen einer hochtemperatur- brennstoffzelle

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties