ATE272259T1 - Laser mit verringerter linienbreite und raumfilter - Google Patents

Laser mit verringerter linienbreite und raumfilter

Info

Publication number
ATE272259T1
ATE272259T1 AT00109628T AT00109628T ATE272259T1 AT E272259 T1 ATE272259 T1 AT E272259T1 AT 00109628 T AT00109628 T AT 00109628T AT 00109628 T AT00109628 T AT 00109628T AT E272259 T1 ATE272259 T1 AT E272259T1
Authority
AT
Austria
Prior art keywords
laser
line
bandwidth
reducing
filter
Prior art date
Application number
AT00109628T
Other languages
English (en)
Inventor
Alexander I Ershov
Igor V Fomenkov
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of ATE272259T1 publication Critical patent/ATE272259T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
AT00109628T 1999-05-10 2000-05-05 Laser mit verringerter linienbreite und raumfilter ATE272259T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/309,478 US6556612B2 (en) 1999-05-10 1999-05-10 Line narrowed laser with spatial filter

Publications (1)

Publication Number Publication Date
ATE272259T1 true ATE272259T1 (de) 2004-08-15

Family

ID=23198405

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00109628T ATE272259T1 (de) 1999-05-10 2000-05-05 Laser mit verringerter linienbreite und raumfilter

Country Status (5)

Country Link
US (1) US6556612B2 (de)
EP (1) EP1054490B1 (de)
JP (1) JP2001044549A (de)
AT (1) ATE272259T1 (de)
DE (1) DE60012420T2 (de)

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US20020127497A1 (en) * 1998-09-10 2002-09-12 Brown Daniel J. W. Large diffraction grating for gas discharge laser
US7856044B2 (en) 1999-05-10 2010-12-21 Cymer, Inc. Extendable electrode for gas discharge laser
US6801560B2 (en) * 1999-05-10 2004-10-05 Cymer, Inc. Line selected F2 two chamber laser system
JP3365500B2 (ja) * 2000-01-19 2003-01-14 ウシオ電機株式会社 狭帯化ＡｒＦエキシマレーザ装置
US6928093B2 (en) * 2002-05-07 2005-08-09 Cymer, Inc. Long delay and high TIS pulse stretcher
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
JP4334261B2 (ja) * 2003-04-08 2009-09-30 ウシオ電機株式会社 露光用２ステージレーザ装置
US20050286599A1 (en) * 2004-06-29 2005-12-29 Rafac Robert J Method and apparatus for gas discharge laser output light coherency reduction
US9018561B2 (en) 2007-05-23 2015-04-28 Cymer, Llc High power seed/amplifier laser system with beam shaping intermediate the seed and amplifier
US20090034576A1 (en) * 2007-08-03 2009-02-05 Newport Corporation Linewidth-narrowed excimer laser cavity
US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US8519366B2 (en) * 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
DE102008050869A1 (de) * 2008-09-30 2009-11-26 Carl Zeiss Laser Optics Gmbh Optische Vorrichtung zur Vergrößerung des Einstellbereichs der spektralen Bandbreite eines Laserstrahls
JP5687488B2 (ja) 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
NL2006747A (en) * 2010-07-26 2012-01-30 Asml Netherlands Bv Imprint lithography alignment method and apparatus.
US9905990B1 (en) 2014-04-17 2018-02-27 Alakai Defense Systems, Inc. Background removal from Raman spectra by an intracavity active-tuning element for a laser
US10416471B2 (en) * 2016-10-17 2019-09-17 Cymer, Llc Spectral feature control apparatus
CN112462464B (zh) * 2020-11-25 2022-11-01 上海思量量子科技有限公司 可级联滤波系统及其光子滤波方法

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US4549144A (en) * 1983-08-31 1985-10-22 The United States Of America As Represented By The United States Department Of Energy Reflex ring laser amplifier system
US4649544A (en) * 1984-10-19 1987-03-10 The United States Of America As Represented By The United States Department Of Energy Electro-optic harmonic conversion to switch a laser beam out of a cavity
JPH01225186A (ja) * 1988-03-03 1989-09-08 Mitsubishi Electric Corp 狭帯域化レーザ
DD295957A5 (de) * 1988-06-07 1991-11-14 Friedrich-Schiller-Universitaet Jena,De Anordnung zur erzeugung schmalbandiger laserstrahlung hoher leistung vorzugsweise fuer laser mit aktivem volumen rechteckigen querschitts
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Also Published As

Publication number Publication date
US20020034209A1 (en) 2002-03-21
EP1054490A2 (de) 2000-11-22
DE60012420T2 (de) 2004-12-16
DE60012420D1 (de) 2004-09-02
EP1054490A3 (de) 2001-01-24
JP2001044549A (ja) 2001-02-16
EP1054490B1 (de) 2004-07-28
US6556612B2 (en) 2003-04-29

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