ATE239979T1 - Plasmabearbeitungsvorrichtung mit elektrisch leitender wand - Google Patents

Plasmabearbeitungsvorrichtung mit elektrisch leitender wand

Info

Publication number
ATE239979T1
ATE239979T1 AT99402845T AT99402845T ATE239979T1 AT E239979 T1 ATE239979 T1 AT E239979T1 AT 99402845 T AT99402845 T AT 99402845T AT 99402845 T AT99402845 T AT 99402845T AT E239979 T1 ATE239979 T1 AT E239979T1
Authority
AT
Austria
Prior art keywords
electrically conductive
conductive wall
plasma processing
processing device
wall
Prior art date
Application number
AT99402845T
Other languages
English (en)
Inventor
Pascal Colpo
Francois Rossi
Original Assignee
European Community
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by European Community filed Critical European Community
Application granted granted Critical
Publication of ATE239979T1 publication Critical patent/ATE239979T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
AT99402845T 1999-11-17 1999-11-17 Plasmabearbeitungsvorrichtung mit elektrisch leitender wand ATE239979T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99402845A EP1102305B1 (de) 1999-11-17 1999-11-17 Plasmabearbeitungsvorrichtung mit elektrisch leitender Wand

Publications (1)

Publication Number Publication Date
ATE239979T1 true ATE239979T1 (de) 2003-05-15

Family

ID=8242178

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99402845T ATE239979T1 (de) 1999-11-17 1999-11-17 Plasmabearbeitungsvorrichtung mit elektrisch leitender wand

Country Status (14)

Country Link
US (1) US6692622B1 (de)
EP (1) EP1102305B1 (de)
JP (1) JP4568467B2 (de)
KR (1) KR20020079738A (de)
AT (1) ATE239979T1 (de)
CA (1) CA2391911C (de)
DE (1) DE69907687T2 (de)
DK (1) DK1102305T3 (de)
ES (1) ES2197589T3 (de)
IL (1) IL149403A0 (de)
NO (1) NO20022358L (de)
PT (1) PT1102305E (de)
TW (1) TW503433B (de)
WO (1) WO2001037313A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100542740B1 (ko) * 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
US20050194099A1 (en) * 2004-03-03 2005-09-08 Jewett Russell F.Jr. Inductively coupled plasma source using induced eddy currents
US8357242B2 (en) 2007-05-03 2013-01-22 Jewett Russell F Crystalline film devices, apparatuses for and methods of fabrication
KR101052579B1 (ko) * 2005-03-07 2011-07-29 더 리젠츠 오브 더 유니버시티 오브 캘리포니아 Ｆｒｃ의 자계에서 플라즈마 이온들 및 전자들을 드라이브하는 시스템 및 방법
US9607719B2 (en) 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US20060291529A1 (en) * 2005-05-26 2006-12-28 Haun Robert E Cold wall induction nozzle
US8736177B2 (en) 2010-09-30 2014-05-27 Fei Company Compact RF antenna for an inductively coupled plasma ion source
GB2582948B (en) * 2019-04-10 2021-12-08 Thermo Fisher Scient Bremen Gmbh Plasma source chamber for a spectrometer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431901A (en) * 1982-07-02 1984-02-14 The United States Of America As Represented By The United States Department Of Energy Induction plasma tube
JP3458912B2 (ja) * 1994-11-15 2003-10-20 アネルバ株式会社 プラズマ処理装置
US5874014A (en) * 1995-06-07 1999-02-23 Berkeley Scholars, Inc. Durable plasma treatment apparatus and method
AU6405496A (en) * 1995-06-29 1997-01-30 Lam Research Corporation A scalable helicon wave plasma processing device with a non-cylindrical source chamber
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
SG60123A1 (en) * 1996-10-08 1999-02-22 Applied Materials Inc Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition
JPH10255997A (ja) * 1997-03-07 1998-09-25 Anelva Corp 磁場増強型誘導結合平面プラズマ発生装置
JPH10284299A (ja) * 1997-04-02 1998-10-23 Applied Materials Inc 高周波導入部材及びプラズマ装置
US6074514A (en) * 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6074516A (en) * 1998-06-23 2000-06-13 Lam Research Corporation High sputter, etch resistant window for plasma processing chambers
US6248251B1 (en) * 1999-02-19 2001-06-19 Tokyo Electron Limited Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma

Also Published As

Publication number Publication date
ES2197589T3 (es) 2004-01-01
JP2003514387A (ja) 2003-04-15
DE69907687D1 (de) 2003-06-12
IL149403A0 (en) 2002-11-10
WO2001037313A1 (en) 2001-05-25
EP1102305A1 (de) 2001-05-23
NO20022358L (no) 2002-06-28
JP4568467B2 (ja) 2010-10-27
CA2391911A1 (en) 2001-05-25
NO20022358D0 (no) 2002-05-16
US6692622B1 (en) 2004-02-17
PT1102305E (pt) 2003-09-30
CA2391911C (en) 2009-06-23
EP1102305B1 (de) 2003-05-07
DE69907687T2 (de) 2004-03-11
TW503433B (en) 2002-09-21
DK1102305T3 (da) 2003-08-04
KR20020079738A (ko) 2002-10-19

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