ATE213573T1 - METHOD AND DEVICE FOR SYMMETRIZING THE LOAD OF PARALLEL-CONNECTED POWER SEMICONDUCTOR MODULES - Google Patents

METHOD AND DEVICE FOR SYMMETRIZING THE LOAD OF PARALLEL-CONNECTED POWER SEMICONDUCTOR MODULES

Info

Publication number
ATE213573T1
ATE213573T1 AT94810725T AT94810725T ATE213573T1 AT E213573 T1 ATE213573 T1 AT E213573T1 AT 94810725 T AT94810725 T AT 94810725T AT 94810725 T AT94810725 T AT 94810725T AT E213573 T1 ATE213573 T1 AT E213573T1
Authority
AT
Austria
Prior art keywords
power semiconductor
symmetrizing
load
parallel
temp
Prior art date
Application number
AT94810725T
Other languages
German (de)
Inventor
Christian Gerster
Patrick Hofer
Ronald Dr Rohner
Reto Dr Schoeb
Original Assignee
Daimlerchrysler Rail Systems
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daimlerchrysler Rail Systems filed Critical Daimlerchrysler Rail Systems
Application granted granted Critical
Publication of ATE213573T1 publication Critical patent/ATE213573T1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H03K17/167—Soft switching using parallel switching arrangements

Landscapes

  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
  • Control Of Multiple Motors (AREA)
  • Supply And Distribution Of Alternating Current (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Each power semiconductor module has an output-side temp.-measuring device and a control unit (3) with a control signal input (13) and a temp. comparator. The difference between measured and max. permitted temp. governs the amplitude of the voltage (UGE) produced by a control signal shaper (7) for operation of a switch (2). A current-measuring device (4) supplies a signal for comparison (5) with a set-point input (14). The difference is applied to a balancing regulator (6) which determines the necessary switching-on and off times.
AT94810725T 1994-01-22 1994-12-14 METHOD AND DEVICE FOR SYMMETRIZING THE LOAD OF PARALLEL-CONNECTED POWER SEMICONDUCTOR MODULES ATE213573T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4401826 1994-01-22

Publications (1)

Publication Number Publication Date
ATE213573T1 true ATE213573T1 (en) 2002-03-15

Family

ID=6508462

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94810725T ATE213573T1 (en) 1994-01-22 1994-12-14 METHOD AND DEVICE FOR SYMMETRIZING THE LOAD OF PARALLEL-CONNECTED POWER SEMICONDUCTOR MODULES

Country Status (5)

Country Link
EP (1) EP0664613B1 (en)
JP (1) JPH07221619A (en)
AT (1) ATE213573T1 (en)
DE (1) DE59410054D1 (en)
NO (1) NO950185L (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469373B2 (en) * 1995-10-31 2003-11-25 三菱電機株式会社 Semiconductor power modules and composite power modules
DE19628131C2 (en) * 1996-07-12 2003-07-17 Semikron Elektronik Gmbh Gate voltage limitation for a circuit arrangement
AU2000228229A1 (en) 2000-03-15 2001-09-24 Ct-Concept Technologie Ag Method for operating a parallel arrangement of power semiconductor switches
JP3696833B2 (en) * 2000-05-18 2005-09-21 三菱電機株式会社 Power semiconductor device
DE10045148B4 (en) * 2000-09-13 2005-10-13 Hella Kgaa Hueck & Co. Method for driving two or more transistors connected in parallel to supply a load in linear operation
DE50015261D1 (en) 2000-12-27 2008-08-21 Ct Concept Technologie Ag METHOD FOR THE DYNAMIC SYMMETRIZATION OF ROW AND PARALLEL-OPERATED POWER SIGNAL SWITCHES
DE102004049162B4 (en) * 2004-10-08 2014-01-30 Continental Automotive Gmbh Method and device for balancing transient currents in switch devices and system comprising a switch device and a device for balancing transient currents in switch device
JP5006771B2 (en) * 2007-11-29 2012-08-22 三菱電機株式会社 Parallel drive
FR2936646B1 (en) * 2008-10-01 2011-07-22 Jean Jacques Carrillo ELECTRONIC CIRCUIT BREAKER AND INSTALLATION COMPRISING IT.
DE102009041019A1 (en) * 2009-09-10 2011-06-22 Siemens Aktiengesellschaft, 80333 Method for controlling insulated gate bipolar transistors of bridge section of phases in self-commutated power converter of intermediate voltage circuit-converter, involves controlling power semiconductors, and determining alternating cycle
DE202011001610U1 (en) 2011-01-18 2014-05-06 Robert Bosch Gmbh Inverter assembly
DE102011006788A1 (en) 2011-04-05 2012-10-11 Siemens Ag Österreich Circuit arrangement for a protective device for electrical installations
AT512886B1 (en) 2012-04-26 2014-03-15 Siemens Ag Method and device for adjusting the delay time of a semiconductor valve
JP6121827B2 (en) * 2013-07-26 2017-04-26 日立オートモティブシステムズ株式会社 Power converter
JP6072645B2 (en) * 2013-08-08 2017-02-01 株式会社日立製作所 Power converter
DE102013113012A1 (en) * 2013-11-25 2015-05-28 Weidmüller Interface GmbH & Co. KG Switched-mode power supply and method for regulating an output voltage of a switched-mode power supply
DE102014224172A1 (en) 2014-11-26 2016-06-02 Robert Bosch Gmbh Method and device for driving parallel-connected power semiconductor switches
US9912279B2 (en) 2015-07-27 2018-03-06 Hamilton Sundstrand Corporation Circuit with current sharing alternately switched parallel transistors
JP6277247B1 (en) 2016-10-03 2018-02-07 本田技研工業株式会社 CONVERSION DEVICE, DEVICE, AND CONTROL METHOD
JP6277246B1 (en) 2016-10-03 2018-02-07 本田技研工業株式会社 CONVERSION DEVICE, DEVICE, AND CONTROL METHOD
US11349395B2 (en) 2016-10-03 2022-05-31 Honda Motor Co., Ltd. Conversion apparatus, device, and control method
EP4333303A1 (en) * 2022-08-30 2024-03-06 Siemens Aktiengesellschaft Temperature-based variable current control for power modules

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3714174A1 (en) * 1987-04-24 1988-11-10 Licentia Gmbh SYMMETERIZATION OF THE CURRENTS TO BE DISCONNECTED, PARALLEL SWITCHED, GATE CONTROLLED SEMICONDUCTORS
EP0409384B1 (en) * 1989-07-20 1995-11-15 General Electric Company Method and apparatus for achieving current balance in parallel connected switching devices
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
JP2912014B2 (en) * 1990-11-19 1999-06-28 インフェンティオ・アクチェンゲゼルシャフト Method and apparatus for connecting converters in parallel
DE4122653C2 (en) * 1991-07-09 1996-04-11 Daimler Benz Ag Controllable semiconductor switching device with integrated current limitation and overtemperature shutdown

Also Published As

Publication number Publication date
NO950185D0 (en) 1995-01-18
EP0664613A3 (en) 1996-06-12
NO950185L (en) 1995-07-24
JPH07221619A (en) 1995-08-18
EP0664613B1 (en) 2002-02-20
EP0664613A2 (en) 1995-07-26
DE59410054D1 (en) 2002-03-28

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Legal Events

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