AU2000228229A1 - Method for operating a parallel arrangement of power semiconductor switches - Google Patents

Method for operating a parallel arrangement of power semiconductor switches

Info

Publication number
AU2000228229A1
AU2000228229A1 AU2000228229A AU2822900A AU2000228229A1 AU 2000228229 A1 AU2000228229 A1 AU 2000228229A1 AU 2000228229 A AU2000228229 A AU 2000228229A AU 2822900 A AU2822900 A AU 2822900A AU 2000228229 A1 AU2000228229 A1 AU 2000228229A1
Authority
AU
Australia
Prior art keywords
sub
switches
pulses
switching
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000228229A
Inventor
Heinz Ruedi
Jan Thalheim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Switzerland GmbH
Original Assignee
CT Concept Technologie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CT Concept Technologie AG filed Critical CT Concept Technologie AG
Publication of AU2000228229A1 publication Critical patent/AU2000228229A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Abstract

The invention relates to a method for statically balancing the loading of power semiconductor switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>) in a parallel circuit ( 1 ). To achieve this in prior art, switching instants of individual switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>) are adapted in the case of GTOs and current amplitudes of individual switches are adapted in the case of IGBTs. According to the invention, a primary pattern ( 4 ) of frame-switching pulses is predetermined for a total current (i) through the parallel circuit ( 1 ) and a secondary pattern ( 51, 52, 53 ) comprising more or fewer pulses than the primary pattern ( 4 ) is generated for at least one switch (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>). In contrast in conventional methods, the asynchronicity of the pulses enables a rapid redistribution of the loading between the parallel switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>), thus reducing or obviating the need for inductive suppressor circuits for limiting the current. The method is compatible with methods for the dynamic synchronization of transient switching and is suitable for "latching" and amplitude-controlled power semiconductor switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>). The examples relate to the addition or omission of subordinate switching pulses during long or short frame-switching pulses and to an active control ( 6 ) of the number of subordinate switching pulses, depending on the loading of the switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>).
AU2000228229A 2000-03-15 2000-03-15 Method for operating a parallel arrangement of power semiconductor switches Abandoned AU2000228229A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2000/000277 WO2001069784A1 (en) 2000-03-15 2000-03-15 Method for operating a parallel arrangement of power semiconductor switches

Publications (1)

Publication Number Publication Date
AU2000228229A1 true AU2000228229A1 (en) 2001-09-24

Family

ID=11003894

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000228229A Abandoned AU2000228229A1 (en) 2000-03-15 2000-03-15 Method for operating a parallel arrangement of power semiconductor switches

Country Status (7)

Country Link
US (1) US7253540B1 (en)
EP (1) EP1266454B1 (en)
AT (1) ATE252788T1 (en)
AU (1) AU2000228229A1 (en)
DE (1) DE50004204D1 (en)
ES (1) ES2208279T3 (en)
WO (1) WO2001069784A1 (en)

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DE102019102929B3 (en) 2019-02-06 2020-07-09 Infineon Technologies Ag Intelligent semiconductor switch
DE102019119972B3 (en) 2019-07-24 2021-01-21 Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102019119973B3 (en) 2019-07-24 2021-01-21 Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102019119975B3 (en) 2019-07-24 2021-01-21 Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102019121685B4 (en) 2019-08-12 2021-03-04 Infineon Technologies Ag SMART ELECTRONIC SWITCH
DE102019121726A1 (en) * 2019-08-13 2021-02-18 Infineon Technologies Ag INTELLIGENT SEMI-CONDUCTOR SWITCH
DE102019121795B4 (en) 2019-08-13 2022-01-20 Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102019121794A1 (en) 2019-08-13 2021-02-18 Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102020203994A1 (en) 2020-03-27 2021-09-30 Siemens Aktiengesellschaft Method for controlling switching elements of a modular multilevel converter
DE102020122571B4 (en) 2020-08-28 2023-03-30 Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
US11378614B2 (en) 2020-09-01 2022-07-05 Infineon Technologies Ag Temperature detection of power switch using modulation of driver output impedance
US10972088B1 (en) 2020-09-01 2021-04-06 Infineon Technologies Ag Temperature detection of a power switch based on paired measurements of current and voltage
DE102020123149A1 (en) 2020-09-04 2022-03-10 Infineon Technologies Ag CONTROL CIRCUIT FOR ELECTRONIC SWITCH
FR3131143A1 (en) * 2021-12-21 2023-06-23 Vitesco Technologies Electrical circuit for vehicle

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Also Published As

Publication number Publication date
DE50004204D1 (en) 2003-11-27
US7253540B1 (en) 2007-08-07
EP1266454A1 (en) 2002-12-18
ES2208279T3 (en) 2004-06-16
ATE252788T1 (en) 2003-11-15
EP1266454B1 (en) 2003-10-22
WO2001069784A1 (en) 2001-09-20

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