ATE206246T1 - INTEGRATED POWER CIRCUIT - Google Patents

INTEGRATED POWER CIRCUIT

Info

Publication number
ATE206246T1
ATE206246T1 AT95410150T AT95410150T ATE206246T1 AT E206246 T1 ATE206246 T1 AT E206246T1 AT 95410150 T AT95410150 T AT 95410150T AT 95410150 T AT95410150 T AT 95410150T AT E206246 T1 ATE206246 T1 AT E206246T1
Authority
AT
Austria
Prior art keywords
power circuit
integrated power
metallisation
rear face
active layer
Prior art date
Application number
AT95410150T
Other languages
German (de)
Inventor
Robert Pezzani
Original Assignee
St Microelectronics Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Sa filed Critical St Microelectronics Sa
Application granted granted Critical
Publication of ATE206246T1 publication Critical patent/ATE206246T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Rectifiers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Conventional vertical components can be formed directly in the n-substrate having rear face covered with metallisation (M) corresp. to a common electrode. One type of isolated component has an active layer of opposite conductivity type on the rear face and is isolated by relatively heavily doped walls (6) which are overlapped by the dielectric layer (7) between the active layer and the metallisation.
AT95410150T 1994-12-30 1995-12-27 INTEGRATED POWER CIRCUIT ATE206246T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9416011A FR2729008B1 (en) 1994-12-30 1994-12-30 INTEGRATED POWER CIRCUIT

Publications (1)

Publication Number Publication Date
ATE206246T1 true ATE206246T1 (en) 2001-10-15

Family

ID=9470525

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95410150T ATE206246T1 (en) 1994-12-30 1995-12-27 INTEGRATED POWER CIRCUIT

Country Status (12)

Country Link
US (3) US6075277A (en)
EP (1) EP0721218B1 (en)
JP (1) JP2671886B2 (en)
KR (1) KR100197912B1 (en)
CN (1) CN1051643C (en)
AT (1) ATE206246T1 (en)
CA (1) CA2166228C (en)
CZ (1) CZ290986B6 (en)
DE (1) DE69522920T2 (en)
FR (1) FR2729008B1 (en)
PL (1) PL177994B1 (en)
TW (1) TW290714B (en)

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FR2729008B1 (en) 1994-12-30 1997-03-21 Sgs Thomson Microelectronics INTEGRATED POWER CIRCUIT
FR2753006B1 (en) * 1996-08-27 1998-11-27 Sgs Thomson Microelectronics MONOLITHIC PROTECTED RECTIFIER BRIDGE
FR2764112B1 (en) * 1997-05-28 1999-08-13 Sgs Thomson Microelectronics INSULATION WALL BETWEEN POWER COMPONENTS
DE19842882A1 (en) * 1998-09-18 2000-03-30 Siemens Ag Method for producing a doping region
FR2773265B1 (en) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics SUBSCRIBER INTERFACE PROTECTION CIRCUIT
US6104045A (en) * 1998-05-13 2000-08-15 Micron Technology, Inc. High density planar SRAM cell using bipolar latch-up and gated diode breakdown
FR2783353A1 (en) * 1998-09-16 2000-03-17 St Microelectronics Sa INSULATION WALL BETWEEN POWER COMPONENTS
FR2800513B1 (en) 1999-11-03 2002-03-29 St Microelectronics Sa POWER COMPONENT STATE DETECTOR
FR2808621B1 (en) 2000-05-05 2002-07-19 St Microelectronics Sa SINGLE CONTROL MONOLITHIC COMPONENT FOR A MIXED BRIDGE
FR2818806B1 (en) 2000-12-21 2003-03-21 St Microelectronics Sa BISTABLE BIDABLE ELECTRONIC SWITCH WITH IMPLUSION CONTROL
FR2818805B1 (en) * 2000-12-21 2003-04-04 St Microelectronics Sa SENSITIVE BIDIRECTIONAL STATIC SWITCH
FR2819102B1 (en) * 2000-12-29 2003-04-04 St Microelectronics Sa BISTABLE BISTABLE PULSE CONTROL ELECTRONIC SWITCH
JP4369230B2 (en) * 2001-11-07 2009-11-18 新電元工業株式会社 Surge protection semiconductor device
FR2834128B1 (en) * 2001-12-21 2005-03-04 St Microelectronics Sa BIDIRECTIONAL PROTECTION DEVICE WITH LOW CAPACITY
FR2834385A1 (en) * 2001-12-28 2003-07-04 St Microelectronics Sa SENSITIVE BIDIRECTIONAL STATIC SWITCH IN Q4 AND Q1 QUADRANTS
US6849492B2 (en) * 2002-07-08 2005-02-01 Micron Technology, Inc. Method for forming standard voltage threshold and low voltage threshold MOSFET devices
US7622753B2 (en) * 2005-08-31 2009-11-24 Stmicroelectronics S.A. Ignition circuit
US7489488B2 (en) 2005-10-19 2009-02-10 Littelfuse, Inc. Integrated circuit providing overvoltage protection for low voltage lines
US20080012099A1 (en) * 2006-07-11 2008-01-17 Shing Yeh Electronic assembly and manufacturing method having a reduced need for wire bonds
AT506361B1 (en) * 2008-02-07 2012-06-15 Siemens Ag thyristor bridge
US7907381B2 (en) * 2008-03-12 2011-03-15 Zarlink Semiconductor (Us) Inc. Protection circuit for a subscriber line interface circuit
US9646869B2 (en) 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) * 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
FR2981200B1 (en) * 2011-10-10 2017-01-13 Centre Nat De La Rech Scient (Cnrs) MONOLITHIC CELL WITH INTEGRATED CIRCUIT AND IN PARTICULAR MONOLITHIC SWITCH CELL
CN104412339B (en) * 2012-07-05 2017-10-17 保险丝公司 Crow bar device for voltage transient circuit protection
US8664690B1 (en) * 2012-11-15 2014-03-04 Macronix International Co., Ltd. Bi-directional triode thyristor for high voltage electrostatic discharge protection
CN103137646A (en) * 2013-03-15 2013-06-05 中国科学院微电子研究所 Gating device unit for bipolar resistive random access memory cross array integration mode
US9070790B2 (en) * 2013-08-29 2015-06-30 Infineon Technologies Ag Vertical semiconductor device and method of manufacturing thereof
US9209187B1 (en) 2014-08-18 2015-12-08 Micron Technology, Inc. Methods of forming an array of gated devices
US9673054B2 (en) 2014-08-18 2017-06-06 Micron Technology, Inc. Array of gated devices and methods of forming an array of gated devices
US9224738B1 (en) 2014-08-18 2015-12-29 Micron Technology, Inc. Methods of forming an array of gated devices
WO2017056355A1 (en) * 2015-09-29 2017-04-06 ソニー株式会社 Semiconductor device, ultrasonic image pickup device, semiconductor device manufacturing method, and ultrasonic imaging system
US10032937B2 (en) * 2016-11-11 2018-07-24 Semiconductor Components Industries, Llc Monolithic series switching semiconductor device having low-resistance substrate contact structure and method
KR102685244B1 (en) * 2019-06-03 2024-07-16 리텔퓨즈 세미컨덕터 (우시) 씨오., 엘티디. Integrated multi-device chips and packages
US11158759B1 (en) * 2020-04-16 2021-10-26 International Business Machines Corporation Chip carrier integrating power harvesting and regulation diodes and fabrication thereof

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FR2697674B1 (en) * 1992-10-29 1995-01-13 Sgs Thomson Microelectronics Thyristor and common cathode thyristor assembly.
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
FR2729008B1 (en) 1994-12-30 1997-03-21 Sgs Thomson Microelectronics INTEGRATED POWER CIRCUIT

Also Published As

Publication number Publication date
CN1051643C (en) 2000-04-19
EP0721218B1 (en) 2001-09-26
DE69522920D1 (en) 2001-10-31
CZ290986B6 (en) 2002-11-13
US6075277A (en) 2000-06-13
FR2729008B1 (en) 1997-03-21
US6580142B1 (en) 2003-06-17
DE69522920T2 (en) 2002-06-13
KR100197912B1 (en) 1999-07-01
CZ996A3 (en) 1997-07-16
CA2166228C (en) 2000-12-12
PL177994B1 (en) 2000-02-29
EP0721218A1 (en) 1996-07-10
US6017778A (en) 2000-01-25
KR960026988A (en) 1996-07-22
FR2729008A1 (en) 1996-07-05
CA2166228A1 (en) 1996-07-01
JPH08241862A (en) 1996-09-17
PL311942A1 (en) 1996-07-08
TW290714B (en) 1996-11-11
CN1131823A (en) 1996-09-25
JP2671886B2 (en) 1997-11-05

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