ATE105652T1 - Lageempfindlicher strahlungsdetektor. - Google Patents

Lageempfindlicher strahlungsdetektor.

Info

Publication number
ATE105652T1
ATE105652T1 AT9090200303T AT90200303T ATE105652T1 AT E105652 T1 ATE105652 T1 AT E105652T1 AT 9090200303 T AT9090200303 T AT 9090200303T AT 90200303 T AT90200303 T AT 90200303T AT E105652 T1 ATE105652 T1 AT E105652T1
Authority
AT
Austria
Prior art keywords
wafer
instant
emit
radiation detector
charge carriers
Prior art date
Application number
AT9090200303T
Other languages
English (en)
Inventor
Eijk Carel Wilhelm Eduard Van
Eric Maurits Schooneveld
Original Assignee
Univ Delft Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Delft Tech filed Critical Univ Delft Tech
Application granted granted Critical
Publication of ATE105652T1 publication Critical patent/ATE105652T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
AT9090200303T 1989-02-13 1990-02-08 Lageempfindlicher strahlungsdetektor. ATE105652T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8900343A NL8900343A (nl) 1989-02-13 1989-02-13 Plaatsgevoelige stralingsdetector.
EP90200303A EP0383389B1 (de) 1989-02-13 1990-02-08 Lageempfindlicher Strahlungsdetektor

Publications (1)

Publication Number Publication Date
ATE105652T1 true ATE105652T1 (de) 1994-05-15

Family

ID=19854119

Family Applications (1)

Application Number Title Priority Date Filing Date
AT9090200303T ATE105652T1 (de) 1989-02-13 1990-02-08 Lageempfindlicher strahlungsdetektor.

Country Status (6)

Country Link
US (1) US5051801A (de)
EP (1) EP0383389B1 (de)
JP (1) JPH02297977A (de)
AT (1) ATE105652T1 (de)
DE (1) DE69008744T2 (de)
NL (1) NL8900343A (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2671880A1 (fr) * 1991-01-22 1992-07-24 Ismra Detecteur de rayonnement.
US5536964A (en) * 1994-09-30 1996-07-16 Green; Evan D. H. Combined thin film pinhole and semiconductor photodetectors
EP0730304B1 (de) * 1995-02-27 2001-10-17 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Halbleiterteilchendetektor und Verfahren zu seiner Herstellung
US5994720A (en) * 1996-03-04 1999-11-30 University Of Pretoria Indirect bandgap semiconductor optoelectronic device
US6111271A (en) * 1996-03-28 2000-08-29 University Of Pretoria Optoelectronic device with separately controllable carrier injection means
US6521894B1 (en) * 1998-11-09 2003-02-18 Photon Imaging, Inc. Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors
RU2141703C1 (ru) * 1999-03-22 1999-11-20 Беда Анатолий Георгиевич Способ осуществления внутреннего пропорционального усиления в полупроводниковом детекторе частиц и излучений и устройство для его реализации
US7521039B2 (en) * 2002-11-08 2009-04-21 Millennium Inorganic Chemicals, Inc. Photocatalytic rutile titanium dioxide
TWI257181B (en) * 2003-07-28 2006-06-21 Rohm Co Ltd Semiconductor module
MX2007002133A (es) 2004-08-20 2007-08-14 Artto Aurola Detector de radiacion de semiconductor con una estructura de compuerta interna modificada.
FI20041479L (fi) * 2004-11-17 2006-05-05 Artto Aurola Muunnettu puolijohdeajautumisilmaisin
EP2018580A2 (de) 2006-04-20 2009-01-28 Multi-Dimensional Imaging, Inc. Strahlungsdetektor und -nachweisverfahren mit reduzierter polarisation
GB2446429A (en) 2006-12-08 2008-08-13 E2V Tech Photosensor with variable sensing area
JP2008153256A (ja) * 2006-12-14 2008-07-03 Institute X-Ray Technologies Co Ltd 放射線検出器
CN101281148B (zh) * 2007-07-27 2011-01-05 江苏天瑞仪器股份有限公司 一种高分辨率的半导体核辐射探测器
US8698091B2 (en) 2009-06-10 2014-04-15 Moxtek, Inc. Semiconductor MOS entrance window for radiation detectors
US8314468B2 (en) * 2009-06-10 2012-11-20 Moxtek, Inc. Variable ring width SDD
US8421172B2 (en) * 2009-07-16 2013-04-16 Canberra Industries, Inc. Simplified silicon drift detector and wraparound neutron detector
DE102010005673A1 (de) 2010-01-26 2011-07-28 INA - Drives & Mechatronics GmbH & Co. OHG, 98527 Greifer für eine Handhabungseinrichtung
JP5731344B2 (ja) 2011-09-28 2015-06-10 浜松ホトニクス株式会社 放射線検出器
US9530902B2 (en) * 2012-06-20 2016-12-27 Oxford Instruments Analytical Oy Two-dimensional guard structure and a radiation detector with the same
EP3032281B1 (de) * 2014-12-11 2019-09-25 PNSensor GmbH Halbleiterdriftdetektor zur detektion von strahlung
CN106547015B (zh) * 2016-10-28 2018-10-19 中国计量科学研究院 探测器
US12015036B2 (en) * 2020-04-28 2024-06-18 Lawrence Livermore National Security, Llc High temporal resolution solid-state X-ray detection system
JP2024154718A (ja) * 2023-04-19 2024-10-31 浜松ホトニクス株式会社 半導体光位置検出器、及び、半導体光位置検出器アレイ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3415439A (en) * 1967-06-07 1968-12-10 Jack J. Skillman Container with an improved pour spout
JPS5474691A (en) * 1977-11-04 1979-06-14 Secr Defence Brit Parallel inputttooseries output converter
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
ATE77899T1 (de) * 1984-04-25 1992-07-15 Josef Kemmer Verarmtes halbleiterelement mit einem potential- minimum fuer majoritaetstraeger.
DE3571726D1 (en) * 1984-04-25 1989-08-24 Josef Kemmer Large-surface low-capacity semi-conductor radiation detector
GB8626576D0 (en) * 1986-11-06 1986-12-10 Amersham Int Plc Imaging method

Also Published As

Publication number Publication date
JPH02297977A (ja) 1990-12-10
EP0383389A1 (de) 1990-08-22
DE69008744D1 (de) 1994-06-16
NL8900343A (nl) 1990-09-03
DE69008744T2 (de) 1994-11-10
EP0383389B1 (de) 1994-05-11
US5051801A (en) 1991-09-24

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Legal Events

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