AT326969B - Verfahren und vorrichtung zur herstellung von vorwiegend oxydischen mustern in einer, auf einem trager aufgedampften metallschicht - Google Patents

Verfahren und vorrichtung zur herstellung von vorwiegend oxydischen mustern in einer, auf einem trager aufgedampften metallschicht

Info

Publication number
AT326969B
AT326969B AT991772A AT991772A AT326969B AT 326969 B AT326969 B AT 326969B AT 991772 A AT991772 A AT 991772A AT 991772 A AT991772 A AT 991772A AT 326969 B AT326969 B AT 326969B
Authority
AT
Austria
Prior art keywords
oxydic
priorly
patterns
production
support
Prior art date
Application number
AT991772A
Other languages
English (en)
Other versions
ATA991772A (de
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ATA991772A publication Critical patent/ATA991772A/de
Application granted granted Critical
Publication of AT326969B publication Critical patent/AT326969B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
AT991772A 1971-12-03 1972-11-21 Verfahren und vorrichtung zur herstellung von vorwiegend oxydischen mustern in einer, auf einem trager aufgedampften metallschicht AT326969B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2160008A DE2160008B2 (de) 1971-12-03 1971-12-03 Verfahren und Vorrichtung zur Herstellung eines Musters in einer auf einem Träger aufgedampften Metallschicht und dessen Verwendung

Publications (2)

Publication Number Publication Date
ATA991772A ATA991772A (de) 1975-03-15
AT326969B true AT326969B (de) 1976-01-12

Family

ID=5826906

Family Applications (1)

Application Number Title Priority Date Filing Date
AT991772A AT326969B (de) 1971-12-03 1972-11-21 Verfahren und vorrichtung zur herstellung von vorwiegend oxydischen mustern in einer, auf einem trager aufgedampften metallschicht

Country Status (8)

Country Link
US (1) US3936545A (de)
JP (1) JPS5614744B2 (de)
AT (1) AT326969B (de)
CH (1) CH589724A5 (de)
DD (1) DD103931A5 (de)
DE (1) DE2160008B2 (de)
FR (1) FR2162030B1 (de)
GB (1) GB1418644A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100313A (en) * 1975-10-28 1978-07-11 Rca Corporation Process for forming an optical waveguide
US4431711A (en) * 1980-03-25 1984-02-14 Ex-Cell-O Corporation Vacuum metallizing a dielectric substrate with indium and products thereof
US4407871A (en) * 1980-03-25 1983-10-04 Ex-Cell-O Corporation Vacuum metallized dielectric substrates and method of making same
JPS57114221A (en) * 1981-01-07 1982-07-16 Matsushita Electric Ind Co Ltd Metallized film capacitor
DE3104390A1 (de) * 1981-02-07 1982-08-19 Robert Bosch Gmbh, 7000 Stuttgart Verfahren zum aufzeichnen von informationen und zur wiedergabe von originalen auf einem aufzeichnungstraeger mit elektrosensitivem belag, und aufzeichnungstraeger zur durchfuehrung des verfahrens
GB2136451B (en) * 1983-03-11 1986-06-25 Gen Electric Plc Depositing porous films by evaporating material on to a surface
US4809440A (en) * 1988-02-11 1989-03-07 Sunnen Products Company In dial bore gages
JPH01142334U (de) * 1988-03-25 1989-09-29
DE4025373A1 (de) * 1990-03-28 1991-10-02 Licentia Gmbh Verfahren zum herstellen einer reflexionsarmen leuchtstoffschicht
US5985356A (en) 1994-10-18 1999-11-16 The Regents Of The University Of California Combinatorial synthesis of novel materials
CN1323409C (zh) * 2001-06-08 2007-06-27 松下电器产业株式会社 两面金属化膜制造方法以及使用它的金属化膜电容器
US7229669B2 (en) * 2003-11-13 2007-06-12 Honeywell International Inc. Thin-film deposition methods and apparatuses
JP2005197587A (ja) * 2004-01-09 2005-07-21 Shinko Electric Ind Co Ltd キャパシタの製造方法、キャパシタ内蔵基板の製造方法、キャパシタ、およびキャパシタ内蔵基板
US7767126B2 (en) * 2005-08-22 2010-08-03 Sipix Imaging, Inc. Embossing assembly and methods of preparation
EP2765218A1 (de) * 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Verfahren und Vorrichtung zur Ablagerung atomarer Schichten auf einem Substrat
EP3531431B1 (de) * 2018-02-22 2020-09-16 ABB Power Grids Switzerland AG Buchsenelektrode mit kanten mit feldabstufungseigenschaften und verfahren zur herstellung einer solchen buchse

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702259A (en) * 1951-08-09 1955-02-15 Emi Ltd Manufacture of electrodes which are sensitized so as to be emitters of photoelectrons or secondary electrons
NL302322A (de) * 1963-02-08
US3406036A (en) * 1965-07-08 1968-10-15 Ibm Selective deposition method and article for use therein
US3472688A (en) * 1965-11-19 1969-10-14 Nippon Electric Co Resistor element and method for manufacturing the same
US3637377A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Method for making a pattern on a support member by means of actinic radiation sensitive element
US3647508A (en) * 1968-08-27 1972-03-07 King Seeley Thermos Co Method of making patterned metal coatings by selective etching of metal
US3801366A (en) * 1971-02-16 1974-04-02 J Lemelson Method of making an electrical circuit

Also Published As

Publication number Publication date
DD103931A5 (de) 1974-02-12
ATA991772A (de) 1975-03-15
GB1418644A (en) 1975-12-24
FR2162030B1 (de) 1977-08-05
DE2160008A1 (de) 1973-06-14
FR2162030A1 (de) 1973-07-13
DE2160008C3 (de) 1975-04-03
US3936545A (en) 1976-02-03
CH589724A5 (de) 1977-07-15
JPS5614744B2 (de) 1981-04-06
JPS4864469A (de) 1973-09-06
DE2160008B2 (de) 1973-11-15

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