AT325122B - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
AT325122B
AT325122B AT659773A AT659773A AT325122B AT 325122 B AT325122 B AT 325122B AT 659773 A AT659773 A AT 659773A AT 659773 A AT659773 A AT 659773A AT 325122 B AT325122 B AT 325122B
Authority
AT
Austria
Prior art keywords
semi
conductor arrangement
conductor
arrangement
Prior art date
Application number
AT659773A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT325122B publication Critical patent/AT325122B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14825Linear CCD imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/94Metal-insulator-semiconductors, e.g. MOS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT659773A 1972-09-07 1973-07-26 Halbleiteranordnung AT325122B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2243988A DE2243988C3 (de) 1972-09-07 1972-09-07 Hableiteranordnung mit mindestens einem MIS-Kondensator

Publications (1)

Publication Number Publication Date
AT325122B true AT325122B (de) 1975-10-10

Family

ID=5855747

Family Applications (1)

Application Number Title Priority Date Filing Date
AT659773A AT325122B (de) 1972-09-07 1973-07-26 Halbleiteranordnung

Country Status (10)

Country Link
JP (1) JPS4968689A (es)
AT (1) AT325122B (es)
CA (1) CA1007746A (es)
CH (1) CH560455A5 (es)
DE (1) DE2243988C3 (es)
FR (1) FR2199180B1 (es)
GB (1) GB1407339A (es)
IT (1) IT993110B (es)
NL (1) NL7311878A (es)
SE (1) SE383584B (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1074009A (en) * 1975-03-03 1980-03-18 Robert W. Brodersen Charge coupled device memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer

Also Published As

Publication number Publication date
CH560455A5 (es) 1975-03-27
FR2199180B1 (es) 1982-03-05
IT993110B (it) 1975-09-30
GB1407339A (en) 1975-09-24
JPS4968689A (es) 1974-07-03
NL7311878A (es) 1974-03-11
DE2243988A1 (de) 1974-03-14
DE2243988C3 (de) 1980-03-20
CA1007746A (en) 1977-03-29
SE383584B (sv) 1976-03-15
FR2199180A1 (es) 1974-04-05
DE2243988B2 (de) 1979-07-05

Similar Documents

Publication Publication Date Title
CH551690A (de) Halbleiteranordnung.
DK144784C (da) Indkapslingsfremgangsmaade
IT996680B (it) Dispositivo semiconduttore
AT324072B (de) Wendelbohreb
AT353108B (de) Skibob
AT376844B (de) Halbleiterbauteil
AT323930B (de) Untermatratze
IT996919B (it) Dispositivo semiconduttore
BE803196A (fr) Thyristor
IT986562B (it) Dispositivo semiconduttore
DK138248C (da) Halvlederelement
CH552285A (de) Halbleiteranordnung.
IT990812B (it) Dispositivo semiconduttore
AT318077B (de) Thyristor
CH541869A (de) Halbleiterbauelement
SE390084B (sv) Tyristor
CH548111A (de) Halbleiteranordnung.
IT980938B (it) Dispositivo semiconduttore
AT335953B (de) Lauterboden
AT322779B (de) Bücherbrett
AT325122B (de) Halbleiteranordnung
AR195531A1 (es) Dispositivo semiconductor
CH542515A (de) Thyristor
SE389226B (sv) Tyristor
CH542512A (de) Halbleiterbauelement

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee