CA1007746A - Semiconductor charge transfer electrodes - Google Patents
Semiconductor charge transfer electrodesInfo
- Publication number
- CA1007746A CA1007746A CA180,432A CA180432A CA1007746A CA 1007746 A CA1007746 A CA 1007746A CA 180432 A CA180432 A CA 180432A CA 1007746 A CA1007746 A CA 1007746A
- Authority
- CA
- Canada
- Prior art keywords
- charge transfer
- transfer electrodes
- semiconductor charge
- semiconductor
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2243988A DE2243988C3 (de) | 1972-09-07 | 1972-09-07 | Hableiteranordnung mit mindestens einem MIS-Kondensator |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1007746A true CA1007746A (en) | 1977-03-29 |
Family
ID=5855747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA180,432A Expired CA1007746A (en) | 1972-09-07 | 1973-09-06 | Semiconductor charge transfer electrodes |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS4968689A (es) |
AT (1) | AT325122B (es) |
CA (1) | CA1007746A (es) |
CH (1) | CH560455A5 (es) |
DE (1) | DE2243988C3 (es) |
FR (1) | FR2199180B1 (es) |
GB (1) | GB1407339A (es) |
IT (1) | IT993110B (es) |
NL (1) | NL7311878A (es) |
SE (1) | SE383584B (es) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1074009A (en) * | 1975-03-03 | 1980-03-18 | Robert W. Brodersen | Charge coupled device memory |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3651349A (en) * | 1970-02-16 | 1972-03-21 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
-
1972
- 1972-09-07 DE DE2243988A patent/DE2243988C3/de not_active Expired
-
1973
- 1973-07-26 AT AT659773A patent/AT325122B/de not_active IP Right Cessation
- 1973-07-30 CH CH1103773A patent/CH560455A5/xx not_active IP Right Cessation
- 1973-08-03 GB GB3690473A patent/GB1407339A/en not_active Expired
- 1973-08-29 NL NL7311878A patent/NL7311878A/xx not_active Application Discontinuation
- 1973-08-31 IT IT28444/73A patent/IT993110B/it active
- 1973-09-04 FR FR7331857A patent/FR2199180B1/fr not_active Expired
- 1973-09-06 CA CA180,432A patent/CA1007746A/en not_active Expired
- 1973-09-06 SE SE7312160A patent/SE383584B/xx unknown
- 1973-09-07 JP JP48101010A patent/JPS4968689A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
AT325122B (de) | 1975-10-10 |
CH560455A5 (es) | 1975-03-27 |
FR2199180B1 (es) | 1982-03-05 |
IT993110B (it) | 1975-09-30 |
GB1407339A (en) | 1975-09-24 |
JPS4968689A (es) | 1974-07-03 |
NL7311878A (es) | 1974-03-11 |
DE2243988A1 (de) | 1974-03-14 |
DE2243988C3 (de) | 1980-03-20 |
SE383584B (sv) | 1976-03-15 |
FR2199180A1 (es) | 1974-04-05 |
DE2243988B2 (de) | 1979-07-05 |
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