AT319007B - Anordnung zur Aufdampfung dünner Schichten unter gleichzeitiger Einwirkung eines ionisierten Gases - Google Patents

Anordnung zur Aufdampfung dünner Schichten unter gleichzeitiger Einwirkung eines ionisierten Gases

Info

Publication number
AT319007B
AT319007B AT178673A AT178673A AT319007B AT 319007 B AT319007 B AT 319007B AT 178673 A AT178673 A AT 178673A AT 178673 A AT178673 A AT 178673A AT 319007 B AT319007 B AT 319007B
Authority
AT
Austria
Prior art keywords
arrangement
vapor deposition
thin layers
ionized gas
simultaneous action
Prior art date
Application number
AT178673A
Other languages
English (en)
Original Assignee
Balzers Patent Beteilig Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers Patent Beteilig Ag filed Critical Balzers Patent Beteilig Ag
Application granted granted Critical
Publication of AT319007B publication Critical patent/AT319007B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
AT178673A 1972-03-06 1973-02-28 Anordnung zur Aufdampfung dünner Schichten unter gleichzeitiger Einwirkung eines ionisierten Gases AT319007B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH327572A CH565869A5 (de) 1972-03-06 1972-03-06

Publications (1)

Publication Number Publication Date
AT319007B true AT319007B (de) 1974-11-25

Family

ID=4252464

Family Applications (1)

Application Number Title Priority Date Filing Date
AT178673A AT319007B (de) 1972-03-06 1973-02-28 Anordnung zur Aufdampfung dünner Schichten unter gleichzeitiger Einwirkung eines ionisierten Gases

Country Status (7)

Country Link
JP (1) JPS5411798B2 (de)
AT (1) AT319007B (de)
CH (1) CH565869A5 (de)
DE (1) DE2305359C3 (de)
FR (1) FR2174967B1 (de)
GB (1) GB1394655A (de)
NL (1) NL151137B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691437A (en) * 1979-12-26 1981-07-24 Nippon Hoso Kyokai <Nhk> Preparation of metallized element
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
JPS6115967A (ja) * 1984-06-29 1986-01-24 Sumitomo Electric Ind Ltd 表面処理方法
JPS61177366A (ja) * 1985-01-31 1986-08-09 Sharp Corp 超微粒子分散基板の製造装置
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film

Also Published As

Publication number Publication date
GB1394655A (en) 1975-05-21
FR2174967B1 (de) 1977-04-22
DE2305359A1 (de) 1973-09-13
DE2305359B2 (de) 1975-07-17
FR2174967A1 (de) 1973-10-19
NL151137B (nl) 1976-10-15
NL7205592A (de) 1973-09-10
CH565869A5 (de) 1975-08-29
JPS5411798B2 (de) 1979-05-17
DE2305359C3 (de) 1980-01-10
JPS48102076A (de) 1973-12-21

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee