AT318006B - Method for producing a diffused zone in a semiconductor body using solid dopant sources - Google Patents

Method for producing a diffused zone in a semiconductor body using solid dopant sources

Info

Publication number
AT318006B
AT318006B AT85671A AT85671A AT318006B AT 318006 B AT318006 B AT 318006B AT 85671 A AT85671 A AT 85671A AT 85671 A AT85671 A AT 85671A AT 318006 B AT318006 B AT 318006B
Authority
AT
Austria
Prior art keywords
producing
semiconductor body
dopant sources
solid dopant
diffused zone
Prior art date
Application number
AT85671A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT318006B publication Critical patent/AT318006B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AT85671A 1970-02-19 1971-02-02 Method for producing a diffused zone in a semiconductor body using solid dopant sources AT318006B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702007685 DE2007685A1 (en) 1970-02-19 1970-02-19 Process for the production of diffused semiconductor components using solid dopant sources

Publications (1)

Publication Number Publication Date
AT318006B true AT318006B (en) 1974-09-25

Family

ID=5762749

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85671A AT318006B (en) 1970-02-19 1971-02-02 Method for producing a diffused zone in a semiconductor body using solid dopant sources

Country Status (7)

Country Link
AT (1) AT318006B (en)
CH (1) CH519248A (en)
DE (1) DE2007685A1 (en)
FR (1) FR2080611A1 (en)
GB (1) GB1288907A (en)
NL (1) NL7102178A (en)
SE (1) SE360024B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells

Also Published As

Publication number Publication date
DE2007685A1 (en) 1971-09-09
SE360024B (en) 1973-09-17
NL7102178A (en) 1971-08-23
CH519248A (en) 1972-02-15
GB1288907A (en) 1972-09-13
FR2080611A1 (en) 1971-11-19

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Legal Events

Date Code Title Description
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