GB1288907A - - Google Patents

Info

Publication number
GB1288907A
GB1288907A GB1288907DA GB1288907A GB 1288907 A GB1288907 A GB 1288907A GB 1288907D A GB1288907D A GB 1288907DA GB 1288907 A GB1288907 A GB 1288907A
Authority
GB
United Kingdom
Prior art keywords
dopant
layer
lacquer
semi
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1288907A publication Critical patent/GB1288907A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Chemically Coating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1288907 Semi-conductor devices SIEMENS AG 19 April 1971 [19 Feb 1970] 21662/71 Heading H1K The conductivity and/or conductivity type of part 5 of a semi-conductor body 1 is modified by diffusion from a layer 6 comprising a solid solution of a dopant in Ni, the layer 6 having been formed by depositing a layer of a lacquer containing a compound of Ni and the dopant in solution therein, evaporating off the lacquer solvent, and heating to thermally decompose both the lacquer base and the Ni-dopant compound. Examples of the Ni-dopant compound are nickeldicarbonylbistributylphosphine for phosphorus dopant and 3-(bisphenylboron)-1,4- diazobutadienenickeldicarbonyl for boron dopant. As and Sb are also referred to as dopants. The lacquer may be photosensitive itself, or may comprise nitrocellulose dissolved in a butylacetate-ether mixture in which case a photoresist method may be used to shape the layer 6. After diffusion the semi-conductor body 1 is left with a Ni-dopant coating 6 which facilitates the formation of ohmic contacts. The presence of Ni is stated to increase the minority carrier lifetime. Adjacent regions containing different dopants may be produced in accordance with the invention, which is applicable to the manufacture of Si, NPN or PNP transistors.
GB1288907D 1970-02-19 1971-04-19 Expired GB1288907A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702007685 DE2007685A1 (en) 1970-02-19 1970-02-19 Process for the production of diffused semiconductor components using solid dopant sources

Publications (1)

Publication Number Publication Date
GB1288907A true GB1288907A (en) 1972-09-13

Family

ID=5762749

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1288907D Expired GB1288907A (en) 1970-02-19 1971-04-19

Country Status (7)

Country Link
AT (1) AT318006B (en)
CH (1) CH519248A (en)
DE (1) DE2007685A1 (en)
FR (1) FR2080611A1 (en)
GB (1) GB1288907A (en)
NL (1) NL7102178A (en)
SE (1) SE360024B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells

Also Published As

Publication number Publication date
CH519248A (en) 1972-02-15
SE360024B (en) 1973-09-17
NL7102178A (en) 1971-08-23
FR2080611A1 (en) 1971-11-19
AT318006B (en) 1974-09-25
DE2007685A1 (en) 1971-09-09

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees