AT262383B - Verfahren zur Herstellung einer integrierten Schaltung - Google Patents

Verfahren zur Herstellung einer integrierten Schaltung

Info

Publication number
AT262383B
AT262383B AT64367A AT64367A AT262383B AT 262383 B AT262383 B AT 262383B AT 64367 A AT64367 A AT 64367A AT 64367 A AT64367 A AT 64367A AT 262383 B AT262383 B AT 262383B
Authority
AT
Austria
Prior art keywords
manufacturing
integrated circuit
integrated
circuit
Prior art date
Application number
AT64367A
Other languages
German (de)
English (en)
Original Assignee
Centre Electron Horloger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electron Horloger filed Critical Centre Electron Horloger
Application granted granted Critical
Publication of AT262383B publication Critical patent/AT262383B/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT64367A 1966-01-31 1967-01-23 Verfahren zur Herstellung einer integrierten Schaltung AT262383B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH126866A CH428947A (fr) 1966-01-31 1966-01-31 Procédé de fabrication d'un circuit intégré

Publications (1)

Publication Number Publication Date
AT262383B true AT262383B (de) 1968-06-10

Family

ID=4206417

Family Applications (1)

Application Number Title Priority Date Filing Date
AT64367A AT262383B (de) 1966-01-31 1967-01-23 Verfahren zur Herstellung einer integrierten Schaltung

Country Status (8)

Country Link
AT (1) AT262383B (US20090182215A1-20090716-C00004.png)
BE (1) BE693141A (US20090182215A1-20090716-C00004.png)
CH (1) CH428947A (US20090182215A1-20090716-C00004.png)
DE (1) DE1619949A1 (US20090182215A1-20090716-C00004.png)
FR (1) FR1509644A (US20090182215A1-20090716-C00004.png)
GB (1) GB1117713A (US20090182215A1-20090716-C00004.png)
NL (1) NL6701103A (US20090182215A1-20090716-C00004.png)
SE (1) SE309453B (US20090182215A1-20090716-C00004.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8002556B2 (en) 2007-07-09 2011-08-23 Adc Gmbh Termination for telecommunication and data engineering

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635024B2 (US20090182215A1-20090716-C00004.png) * 1973-12-14 1981-08-14
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
JPS5718341B2 (US20090182215A1-20090716-C00004.png) * 1974-12-11 1982-04-16
DE2632647A1 (de) * 1976-07-20 1978-01-26 Siemens Ag Halbleiterbauelement mit passivierender schutzschicht

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8002556B2 (en) 2007-07-09 2011-08-23 Adc Gmbh Termination for telecommunication and data engineering

Also Published As

Publication number Publication date
SE309453B (US20090182215A1-20090716-C00004.png) 1969-03-24
NL6701103A (US20090182215A1-20090716-C00004.png) 1967-08-01
FR1509644A (fr) 1968-01-12
BE693141A (US20090182215A1-20090716-C00004.png) 1967-07-03
CH428947A (fr) 1967-01-31
DE1619949A1 (de) 1970-07-30
GB1117713A (en) 1968-06-19

Similar Documents

Publication Publication Date Title
AT280349B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT261004B (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT318001B (de) Verfahren zur Herstellung einer integrierten Halbleitervorrichtung
AT280350B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH449777A (de) Verfahren zur Herstellung einer Festkörperschaltung
AT285937B (de) Verfahren zur Herstellung einer Oxymethylenpolymerzusammensetzung
AT322632B (de) Verfahren zur herstellung einer integrierten halbleitervorrichtung
AT322633B (de) Verfahren zur herstellung einer halbleiteranordnung
AT275478B (de) Verfahren zur Herstellung kleiner Kapseln
AT256938B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT256217B (de) Verfahren zur Herstellung einer gedruckten Schaltung
CH449122A (de) Verfahren zur Herstellung einer integrierten Halbleiterschaltung und nach dem Verfahren hergestellte Halbleiterschaltung
CH423999A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT310843B (de) Verfahren zur Herstellung einer gedruckten Leiterplatte
CH452062A (de) Verfahren zur Herstellung von integrierten Schaltungen
AT281760B (de) Verfahren zur Herstellung kleiner Kapseln
AT275477B (de) Verfahren zur Herstellung kleiner Kapseln
CH474856A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT262383B (de) Verfahren zur Herstellung einer integrierten Schaltung
CH500845A (de) Verfahren zur Herstellung von Drucken
CH466779A (de) Verfahren zur Herstellung von Bauelementen
CH550755A (de) Verfahren zur herstellung von coenzymen.
AT299309B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH494984A (de) Verfahren zur Herstellung einer Ätzreserve
CH470759A (de) Verfahren zur Herstellung eines Halbleiterbauelementes