AT258421B - Halbleiterkristall mit Faserstruktur - Google Patents

Halbleiterkristall mit Faserstruktur

Info

Publication number
AT258421B
AT258421B AT107266A AT107266A AT258421B AT 258421 B AT258421 B AT 258421B AT 107266 A AT107266 A AT 107266A AT 107266 A AT107266 A AT 107266A AT 258421 B AT258421 B AT 258421B
Authority
AT
Austria
Prior art keywords
fiber structure
semiconductor crystal
crystal
semiconductor
fiber
Prior art date
Application number
AT107266A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT258421B publication Critical patent/AT258421B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT107266A 1965-03-18 1966-02-07 Halbleiterkristall mit Faserstruktur AT258421B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0096033 1965-03-18
DES0096034 1965-03-18

Publications (1)

Publication Number Publication Date
AT258421B true AT258421B (de) 1967-11-27

Family

ID=25998003

Family Applications (1)

Application Number Title Priority Date Filing Date
AT107266A AT258421B (de) 1965-03-18 1966-02-07 Halbleiterkristall mit Faserstruktur

Country Status (8)

Country Link
US (1) US3442823A (it)
AT (1) AT258421B (it)
BE (1) BE675189A (it)
CH (1) CH453310A (it)
DE (2) DE1519868B2 (it)
GB (1) GB1106314A (it)
NL (1) NL6602216A (it)
SE (1) SE315267B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
BE760094A (fr) * 1969-12-09 1971-06-09 Siemens Ag Dispositif detecteur de rayonnement infra-rouge et son procede de fabrication
JPS5134268B2 (it) * 1972-07-13 1976-09-25
US3953876A (en) * 1973-06-07 1976-04-27 Dow Corning Corporation Silicon solar cell array
BE879975A (fr) * 1978-12-04 1980-03-03 Colburn William A Dispositif electronique contenant une matiere composite et son procede de realisation
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
US4532000A (en) * 1983-09-28 1985-07-30 Hughes Aircraft Company Fabrication of single crystal fibers from congruently melting polycrystalline fibers
US4984037A (en) * 1986-12-11 1991-01-08 Gte Laboratories Incorporated Semiconductor device with conductive rectifying rods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE399896C (de) * 1924-07-31 Frederick Shand Goucher Dr Verfahren zur Herstellung von Metalldraehten oder -faeden, insbesondere aus schwerschmelzbaren Metallen
BE510303A (it) * 1951-11-16
US3259582A (en) * 1959-11-30 1966-07-05 Siemens Ag Mix-crystal semiconductor devices

Also Published As

Publication number Publication date
DE1519869B1 (de) 1970-01-15
SE315267B (it) 1969-09-29
DE1519868B2 (de) 1971-07-29
GB1106314A (en) 1968-03-13
US3442823A (en) 1969-05-06
CH453310A (de) 1968-06-14
NL6602216A (it) 1966-09-19
BE675189A (it) 1966-05-16
DE1519868A1 (de) 1970-04-16

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