AT238258B - Transistor und Verfahren zu seiner Herstellung - Google Patents
Transistor und Verfahren zu seiner HerstellungInfo
- Publication number
- AT238258B AT238258B AT928862A AT928862A AT238258B AT 238258 B AT238258 B AT 238258B AT 928862 A AT928862 A AT 928862A AT 928862 A AT928862 A AT 928862A AT 238258 B AT238258 B AT 238258B
- Authority
- AT
- Austria
- Prior art keywords
- transistor
- manufacture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL272046 | 1961-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
AT238258B true AT238258B (de) | 1965-02-10 |
Family
ID=19753454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT928862A AT238258B (de) | 1961-11-30 | 1962-11-27 | Transistor und Verfahren zu seiner Herstellung |
Country Status (6)
Country | Link |
---|---|
US (1) | US3305411A (de) |
AT (1) | AT238258B (de) |
BE (1) | BE625431A (de) |
ES (1) | ES282889A1 (de) |
GB (1) | GB1031157A (de) |
NL (1) | NL272046A (de) |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
US2840494A (en) * | 1952-12-31 | 1958-06-24 | Henry W Parker | Manufacture of transistors |
GB765190A (en) * | 1954-06-11 | 1957-01-02 | Standard Telephones Cables Ltd | Improvements in or relating to the treatment of electric semi-conducting materials |
NL103256C (de) * | 1954-10-29 | |||
US2941131A (en) * | 1955-05-13 | 1960-06-14 | Philco Corp | Semiconductive apparatus |
CA605440A (en) * | 1955-11-03 | 1960-09-20 | E. Pardue Turner | Semiconductor devices and methods of making the same |
NL210216A (de) * | 1955-12-02 | |||
BE565907A (de) * | 1957-03-22 | |||
US2975342A (en) * | 1957-08-16 | 1961-03-14 | Research Corp | Narrow base planar junction punch-thru diode |
NL239515A (de) * | 1958-06-18 | |||
NL135006C (de) * | 1958-12-24 | |||
NL155412C (de) * | 1959-04-15 | |||
US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
NL276751A (de) * | 1961-04-10 |
-
0
- BE BE625431D patent/BE625431A/xx unknown
- NL NL272046D patent/NL272046A/xx unknown
-
1962
- 1962-11-21 US US239310A patent/US3305411A/en not_active Expired - Lifetime
- 1962-11-27 AT AT928862A patent/AT238258B/de active
- 1962-11-27 GB GB44827/62A patent/GB1031157A/en not_active Expired
- 1962-11-28 ES ES282889A patent/ES282889A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE625431A (de) | |
NL272046A (de) | |
US3305411A (en) | 1967-02-21 |
GB1031157A (en) | 1966-05-25 |
ES282889A1 (es) | 1963-05-01 |
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