WO2013191203A1 - スルホン構造及びアミン構造を有するシリコン含有レジスト下層膜形成組成物 - Google Patents
スルホン構造及びアミン構造を有するシリコン含有レジスト下層膜形成組成物 Download PDFInfo
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- WO2013191203A1 WO2013191203A1 PCT/JP2013/066826 JP2013066826W WO2013191203A1 WO 2013191203 A1 WO2013191203 A1 WO 2013191203A1 JP 2013066826 W JP2013066826 W JP 2013066826W WO 2013191203 A1 WO2013191203 A1 WO 2013191203A1
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Definitions
- the present invention relates to a novel silane compound.
- the present invention relates to a composition for forming a lower layer film between a substrate used for manufacturing a semiconductor device and a resist (for example, photoresist, electron beam resist, EUV resist). More particularly, the present invention relates to a resist underlayer film forming composition for lithography for forming an underlayer film used as a lower layer of a photoresist in a lithography process of manufacturing a semiconductor device.
- the present invention also relates to a method for forming a resist pattern using the underlayer film forming composition.
- microfabrication is obtained by forming a thin film of photoresist on a semiconductor substrate such as a silicon wafer, irradiating it with an actinic ray such as ultraviolet rays through a mask pattern on which a semiconductor device pattern is drawn, and developing it.
- actinic ray such as ultraviolet rays
- fine irregularities corresponding to the pattern are formed on the substrate surface by etching the substrate using the photoresist pattern as a protective film.
- a resist underlayer film has been arranged between a semiconductor substrate and a photoresist in order to achieve various effects including an antireflection effect.
- a film known as a hard mask containing a metal element such as silicon is used (for example, see Patent Document 1).
- the rate of removal by dry etching largely depends on the type of gas used for dry etching. Then, by appropriately selecting the gas type, it is possible to remove the hard mask by dry etching without a significant decrease in the thickness of the photoresist.
- a composition for a resist underlayer film has been studied, but development of a new material for the resist underlayer film is desired because of the variety of required characteristics.
- Another object of the present invention is to provide a resist underlayer film for lithography that does not cause intermixing with the resist and has a higher dry etching rate than the resist, and a resist underlayer film forming composition for forming the underlayer film.
- the objective of this invention is providing the novel compound which can be used for the resist underlayer film forming composition for these lithography.
- a silane compound represented by the following formula (1-a) or (1-b) (In the formula (1-a), at least one of R 1 , R 3 , and R 4 is a group in which an —Si (X) 3 group is bonded to the terminal of an alkylene group having 1 to 10 carbon atoms.
- the remaining group represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms
- R 2 represents an alkylene group having 1 to 10 carbon atoms or 6 carbon atoms.
- At least one group out of R 6 , R 7 , R 9 , and R 10 has an —Si (X) 3 group bonded to the terminal of an alkylene group having 1 to 10 carbon atoms.
- the remaining group represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms
- R 5 and R 8 are alkylene groups having 1 to 10 carbon atoms
- an arylene group having 6 to 40 carbon atoms is represented.
- said X represents an alkoxy group, an acyloxy group, or a halogen atom.
- the silane includes at least one of a hydrolyzable organosilane, a hydrolyzate thereof, and a hydrolyzed condensate thereof, wherein the silane is represented by the formula (1-a) or the formula ( A composition for forming a resist underlayer film for lithography comprising the silane compound represented by 1-b):
- the silane compound represented by the above formula (1-a) is represented by the following formula (2): (In Formula (2), R 1 and R 4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms, and R 2 represents an alkylene having 1 to 10 carbon atoms.
- the silane has the formula (3): (In the formula (3), R 21 represents an alkyl group, aryl group, aralkyl group, halogenated alkyl group, halogenated aryl group, halogenated aralkyl group, alkenyl group, or epoxy group, acryloyl group, methacryloyl group, mercapto group, An alkoxyaryl group, an acyloxyaryl group, an isocyanurate group, a hydroxy group, a cyclic amino group, an organic group having a cyano group, or a combination thereof, and bonded to a silicon atom through a Si-C bond , R 22
- a hydrolysis condensate of a silane compound represented by the above formula (1-a) or (1-b) and a silane represented by the formula (1-a) or (1-b) comprising at least one kind of hydrolysis condensate of the compound and the organosilicon compound represented by formula (3) as a polymer
- the composition according to any one of the second to sixth aspects further including water
- a resist underlayer film obtained by applying and baking the resist underlayer film forming composition according to any one of the second to seventh aspects on a semiconductor substrate As a ninth aspect, a step of applying the resist underlayer film forming
- the resist underlayer film forming composition of the present invention since the silane compound represented by the formula (1-a) or the formula (1-b) has a sulfonyl group and an amino group, the resist underlayer film forming composition
- the resist underlayer film formed from an object can improve that the cross-sectional shape of the patterned resist film becomes a footing shape.
- the silane compound represented by the formula (1-a) or the formula (1-b) undergoes a condensation reaction by hydrolyzing or partially hydrolyzing a hydrolyzable group.
- a polyorganosiloxane structure can be formed by the above, it is possible to form a resist underlayer film that can function as a hard mask and an antireflection film in the manufacture of a semiconductor device and hardly causes intermixing with a resist. it can.
- FIG. 1 is a diagram showing an NMR spectrum of the compound represented by the formula (1-1) obtained in the examples (where X represents an ethoxy group).
- FIG. 2 is a diagram showing an NMR spectrum of the compound represented by the formula (1-2) obtained in the examples (where X represents an ethoxy group).
- a resist underlayer film is formed on a substrate by a coating method, or a resist underlayer film is formed on the substrate via an organic underlayer film by a coating method, and a resist film (for example, , Photoresist, electron beam resist, EUV resist).
- a resist film for example, , Photoresist, electron beam resist, EUV resist.
- a resist pattern is formed by exposure and development, and the resist underlayer film is dry-etched using the resist pattern to transfer the pattern, and the substrate is processed by the pattern, or the organic underlayer film is etched by pattern transfer.
- the substrate is processed with the organic underlayer film.
- the resist film thickness tends to be thin in order to prevent pattern collapse.
- the resist underlayer film (containing an inorganic silicon compound) is coated on the substrate with or without an organic underlayer film on the substrate, and a resist film (organic resist film) is formed thereon. It is coated in the order of.
- the organic component film and the inorganic component film differ greatly in the dry etching rate depending on the selection of the etching gas.
- the organic component film has an oxygen-based gas and the dry etching rate increases.
- the inorganic component film has a halogen-containing gas. This increases the dry etching rate.
- a resist pattern is formed, and the resist underlayer film of the present application existing under the resist pattern is dry-etched with a halogen-containing gas to transfer the pattern to the resist underlayer film, and the halogen-containing gas is transferred with the pattern transferred to the resist underlayer film.
- the organic underlayer film under the layer is dry-etched with an oxygen-based gas to transfer the pattern to the organic underlayer film, and the pattern-transferred organic underlayer film is halogen-containing.
- Substrate processing is performed using gas.
- the resist underlayer film functions as a hard mask, and hydrolyzable groups such as alkoxy groups, acyloxy groups, and halogen atoms in the structures of the above formulas (1) and (2) are hydrolyzed or partially hydrolyzed.
- the polymer is decomposed, and then a polysiloxane structure polymer is formed by a condensation reaction of silanol groups.
- This polyorganosiloxane structure has a sufficient function as a hard mask.
- the polyorganosiloxane structure (intermediate film) is effective as a hard mask for etching the underlying organic underlayer film and processing (etching) the substrate.
- the resist underlayer film of the present invention has an improvement in dry etching rate with respect to these upper layer resists and resistance to dry etching during substrate processing.
- the resist underlayer film by the resist underlayer film forming composition of the present invention contains a silane compound containing an organic group containing a sulfonyl group and a light-absorbing group, a hydrolyzate thereof, and a hydrolysis condensate thereof.
- the resist pattern has a rectangular shape. This makes it possible to process a substrate with a fine pattern.
- a resist pattern by a resist underlayer film using a silane compound having a sulfonamide group described in patent literature tends to be footing
- a resist underlayer film using a silane compound having a sulfone structure and an amino structure of the present invention is The tendency of the resist pattern to be footed can be improved.
- the present invention relates to a silane compound represented by the formula (1-a) or the formula (1-b).
- the present invention includes at least one of hydrolyzable organosilane, a hydrolyzate thereof, and a hydrolyzed condensate thereof as a silane, and the silane is represented by the formula (1-a) or the formula (1-b).
- the present invention relates to a resist underlayer film forming composition for lithography which is a silane compound.
- the proportion of the silane represented by the formula (1-a) or the formula (1-b) in the whole silane is less than 50 mol%, for example, 0.5 to 30 mol%, 0.5 to 25 mol%, 0.5 To 15 mol%, or 0.5 to 10 mol%.
- the resist underlayer film forming composition of the present invention comprises a hydrolyzable organosilane which is a silane compound represented by the formula (1-a) or the formula (1-b), a hydrolyzate thereof, or a hydrolyzate condensate thereof. And solvent.
- a hydrolyzable organosilane which is a silane compound represented by the formula (1-a) or the formula (1-b), a hydrolyzate thereof, or a hydrolyzate condensate thereof.
- solvent As optional components, acid, water, alcohol, curing catalyst, acid generator, other organic polymer, light-absorbing compound, surfactant and the like can be included.
- the silane compound represented by the formula (1-a) and the silane compound represented by the formula (1-b) can be used in combination, and the resist underlayer film forming composition of the present invention comprises: A silane compound represented by the formula (1-a), a silane compound represented by the formula (1-b), a hydrolyzate of the silane compound represented by the formula (1-a), and a formula (1-b)
- One or more of the hydrolysis condensates of the silane compound represented by a) and the silane compound represented by formula (1-b) can be contained.
- the solid content in the resist underlayer film forming composition of the present invention is, for example, 0.1 to 50% by mass, or 0.1 to 30% by mass, and 0.1 to 25% by mass.
- the solid content is obtained by removing the solvent component from all the components of the resist underlayer film forming composition.
- the ratio of hydrolyzable organosilane, its hydrolyzate, and its hydrolysis condensate in the solid content is 20% by mass or more, for example, 50 to 100% by mass, 60 to 100% by mass, 70 to 100% by mass. %.
- the hydrolyzable organosilane used in the present invention has a structure represented by the formula (1-a) or the formula (1-b).
- a silane compound represented by the formula (2) can be exemplified.
- at least one group of R 1 , R 3 and R 4 represents a group in which —Si (X) 3 group is bonded to the terminal of an alkylene group having 1 to 10 carbon atoms, and the rest Represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms
- R 2 represents an alkylene group having 1 to 10 carbon atoms or an alkyl group having 6 to 40 carbon atoms. Represents an arylene group.
- said X represents an alkoxy group, an acyloxy group, or a halogen atom.
- at least one of R 6 , R 7 , R 9 , and R 10 is a group in which a —Si (X) 3 group is bonded to the terminal of an alkylene group having 1 to 10 carbon atoms.
- the remaining group represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 40 carbon atoms
- R 5 and R 8 are alkylene groups having 1 to 10 carbon atoms, or carbon Represents an arylene group having 6 to 40 atoms.
- said X represents an alkoxy group, an acyloxy group, or a halogen atom.
- alkyl group having 1 to 10 carbon atoms examples include methyl group, ethyl group, n-propyl group, i-propyl group, cyclopropyl group, n-butyl group, i-butyl group, s-butyl group, t- Butyl, cyclobutyl, 1-methyl-cyclopropyl, 2-methyl-cyclopropyl, n-pentyl, 1-methyl-n-butyl, 2-methyl-n-butyl, 3-methyl-n -Butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, cyclopentyl group, 1 -Methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3
- a methyl group, an ethyl group, and an n-propyl group can be preferably used.
- the alkylene group having 1 to 10 carbon atoms include alkylene groups corresponding to the above alkyl groups.
- a methylene group, ethylene group, and a propylene group can also be used preferably.
- Examples of the aryl group having 6 to 40 carbon atoms include phenyl group, o-methylphenyl group, m-methylphenyl group, p-methylphenyl group, o-chlorophenyl group, m-chlorophenyl group, and p-chlorophenyl group.
- a phenyl group can be preferably used.
- Examples of the arylene group having 6 to 40 carbon atoms include arylene groups corresponding to the above aryl groups.
- a phenylene group can be preferably used.
- Examples of the hydrolyzable group of the hydrolyzable silane include an alkoxy group, an acyloxy group, and a halogen atom.
- alkoxy group examples include an alkoxy group having a linear, branched, or cyclic alkyl portion having 1 to 20 carbon atoms, such as a methoxy group, an ethoxy group, an n-propoxy group, an i-propoxy group, and an n-butoxy group.
- Examples of the acyloxy group having 2 to 20 carbon atoms include a methylcarbonyloxy group, an ethylcarbonyloxy group, an n-propylcarbonyloxy group, an i-propylcarbonyloxy group, an n-butylcarbonyloxy group, an i-butylcarbonyloxy group, s-butylcarbonyloxy group, t-butylcarbonyloxy group, n-pentylcarbonyloxy group, 1-methyl-n-butylcarbonyloxy group, 2-methyl-n-butylcarbonyloxy group, 3-methyl-n-butyl Examples thereof include a carbonyloxy group and a 1,1-dimethyl-n-propylcarbonyloxy group.
- Examples of the halogen atom include fluorine, chlorine, bromine and iodine.
- the silane compound represented by formula (1-a), the silane compound represented by formula (1-b), and the silane compound (hydrolyzable organosilane) represented by formula (2) are an amine compound and a sulfone compound. Can also be synthesized. Examples of the silane compound represented by the formula (1-a), the silane compound represented by the formula (1-b), and the silane compound (hydrolyzable organosilane) represented by the formula (2) are shown below. be able to. In the following formula, X represents the alkoxy group, the acyloxy group, or the halogen atom.
- an organosilicon compound represented by formula (3) hydrolyzable organosilane
- an organosilicon compound represented by formula (4) hydrolyzable organosilane.
- a silane compound (hydrolyzable organosilane) represented by formula (1-a) or formula (1-b) and an organosilicon compound (hydrolyzable organosilane) represented by formula (3) ) Can be used in combination.
- At least one of a silane compound (hydrolyzable organosilane) represented by formula (1-a) or formula (1-b), a hydrolyzate thereof, and a hydrolyzate condensate thereof, and the formula (3) Can be used in combination with at least one selected from the group consisting of the organosilicon compound, its hydrolyzate, and its hydrolysis condensate.
- the resist underlayer film forming composition of the present invention includes a silane compound represented by the formula (1-a), a silane compound represented by the formula (1-b), and a silane represented by the formula (1-a).
- Hydrolyzate of compound, hydrolyzate of silane compound represented by formula (1-b), hydrolysis condensate of silane compound represented by formula (1-a), represented by formula (1-b) A hydrolytic condensate of the silane compound, at least one of the hydrolytic condensates of the silane compound represented by the formula (1-a) and the silane compound represented by the formula (1-b); Hydrolysis of an organosilicon compound represented by formula (3), a hydrolyzate thereof, a hydrolysis condensate thereof, a silane compound represented by formula (1-a) and an organosilicon compound represented by formula (3) Decomposition condensate, hydrolysis condensate of silane compound represented by formula (1-b) and organosilicon compound represented by formula (3), and silane compound and formula represented by formula (1-a) At least one kind of hydrolysis condensate of the silane compound represented by (1-b) and the organosilicon compound represented by formula (3) can be used in combination.
- the ratio of the silane compound (hydrolyzable organosilane) represented by the above formula (1-a) or (1-b) to the organosilicon compound represented by the formula (3) is 1: It can be used in the range of 0 to 1: 200.
- a silane compound (hydrolyzable organosilane) represented by the formula (1-a) or the formula (1-b) and an organosilicon compound represented by the formula (3) The ratio can be used in a molar ratio of 1: 199 to 1: 2. These are preferably used as hydrolyzed condensates (polymers of polyorganosiloxane).
- a hydrolysis condensate (polyorganosiloxane polymer) with an organosilicon compound (hydrolyzable organosilane) represented by R 1 in the organosilicon compound (hydrolyzable organosilane) represented by the formula (3) is an alkyl group, aryl group, aralkyl group, halogenated alkyl group, halogenated aryl group, halogenated aralkyl group, alkenyl group, Or an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, an isocyanurate group, a hydroxy group, a cyclic amino group, or a cyano group, or a combination thereof; It is bonded
- the alkoxy group, acyloxy group, or halogen atom contained in the organic group having an alkoxyaryl group, acyloxyaryl group, isocyanurate group, hydroxy group, cyclic amino group, or cyano group, and further a hydrolyzable group is represented by the formula ( Examples thereof include those described in 1-a) and formula (1-b).
- organosilicon compound (hydrolyzable organosilane) represented by the formula (3) examples include tetramethoxysilane, tetrachlorosilane, tetraacetoxysilane, tetraethoxysilane, tetra n-propoxysilane, tetraisopropoxysilane, tetra n -Butoxysilane, tetraacetoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltrichlorosilane, methyltriacetoxysilane, methyltripropoxysilane, methyltriacetoxysilane, methyltributoxysilane, methyltripropoxysilane, methyltri Amyloxysilane, methyltriphenoxysilane, methyltribenzyloxysilane, methyltriphenethyloxysilane, glycidoxymethyltrimethoxysilane, methyl
- a combination of a tetraalkoxysilane such as tetramethoxysilane or tetraethoxysilane and a phenyltrialkoxysilane such as phenyltrimethoxysilane or phenyltriethoxysilane is preferred.
- alkyltrialkoxysilanes such as methyltrimethoxysilane and methyltriethoxysilane with these combinations.
- organosilicon compound (hydrolyzable organosilane) represented by the above formula (3) can also be exemplified by the following structure.
- R 22 in the structure represents the same meaning as R 22 in formula (3).
- R 31 represents an alkyl group
- R 32 represents an alkoxy group, an acyloxy group, or a halogen atom
- Y represents an alkylene group or an arylene group.
- B represents an integer of 0 or 1
- c represents an integer of 0 or 1.
- alkyl group, alkoxy group, acyloxy group, or halogen atom those exemplified in formula (1-a) and formula (1-b) can be used.
- Examples of the alkylene group and arylene group include divalent organic groups corresponding to the above alkyl group and aryl group.
- organosilicon compound (hydrolyzable organosilane) represented by the formula (4) examples include methylene bistrimethoxysilane, methylene bistrichlorosilane, methylene bistriacetoxy silane, ethylene bistriethoxy silane, ethylene bistrichlorosilane, ethylene bistriacetoxy silane, and propylene.
- Hydrolysis condensate (polyorganosiloxane) of silane compound (hydrolyzable organosilane) represented by formula (1-a) or formula (1-b), or formula (1-a) or formula (1-b) )
- a hydrolytic condensate of the silane compound (hydrolyzable organosilane) represented by formula (3) with at least one of the organosilicon compound represented by formula (3) and the organosilicon compound represented by formula (4) (Polyorganosiloxane) can be obtained as a condensate having a weight average molecular weight of 1,000 to 1,000,000, or 1,000 to 100,000. These molecular weights are molecular weights obtained in terms of polystyrene by GPC analysis.
- GPC measurement conditions are, for example, GPC apparatus (trade name HLC-8220GPC, manufactured by Tosoh Corporation), GPC column (trade names Shodex KF803L, KF802, KF801, Showa Denko), column temperature is 40 ° C., eluent (elution solvent) Is tetrahydrofuran, the flow rate (flow rate) is 1.0 ml / min, and the standard sample is polystyrene (manufactured by Showa Denko KK).
- hydrolysis of the alkoxysilyl group, acyloxysilyl group, or halogenated silyl group 0.5 to 100 mol, preferably 1 to 10 mol of water is used per mol of the hydrolyzable group. Further, 0.001 to 10 mol, preferably 0.001 to 1 mol of hydrolysis catalyst can be used per mol of the hydrolyzable group.
- the reaction temperature during the hydrolysis and condensation is usually 20 to 80 ° C. Hydrolysis may be performed completely or partially. That is, a hydrolyzate or a monomer may remain in the hydrolysis condensate.
- a catalyst can be used in the hydrolysis and condensation. Examples of the hydrolysis catalyst include metal chelate compounds, organic acids, inorganic acids, organic bases, and inorganic bases.
- Examples of the metal chelate compound as the hydrolysis catalyst include triethoxy mono (acetylacetonato) titanium, tri-n-propoxy mono (acetylacetonato) titanium, tri-i-propoxy mono (acetylacetonato) titanium, tri -N-Butoxy mono (acetylacetonato) titanium, tri-sec-butoxy mono (acetylacetonato) titanium, tri-t-butoxy mono (acetylacetonato) titanium, diethoxy bis (acetylacetonato) titanium , Di-n-propoxy bis (acetylacetonato) titanium, di-i-propoxy bis (acetylacetonato) titanium, di-n-butoxy bis (acetylacetonato) titanium, di-sec-butoxy bis (Acetylacetonate) titanium, di-t Butoxy bis (acetylacetonato) titanium, monoethoxy tris (acetylacetonato) titanium
- Organic acids as hydrolysis catalysts are, for example, acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, maleic acid, methylmalonic acid, adipic acid, sebacin Acid, gallic acid, butyric acid, meritic acid, arachidonic acid, mikimic acid, 2-ethylhexanoic acid, oleic acid, stearic acid, linoleic acid, linolenic acid, salicylic acid, benzoic acid, p-aminobenzoic acid, p-toluenesulfonic acid Benzenesulfonic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoroacetic acid, formic acid, malonic acid, sulfonic acid
- Examples of the inorganic acid as the hydrolysis catalyst include hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid.
- Organic bases as hydrolysis catalysts are, for example, pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, trimethylamine, triethylamine, monoethanolamine, diethanolamine, dimethylmonoethanolamine, monomethyldiethanolamine, triethanolamine, diazabicyclooctane, dia Examples include zabicyclononane, diazabicycloundecene, and tetramethylammonium hydroxide.
- inorganic base examples include ammonia, sodium hydroxide, potassium hydroxide, barium hydroxide, calcium hydroxide and the like.
- metal chelate compounds, organic acids, and inorganic acids are preferred, and these may be used alone or in combination of two or more.
- organic solvent used for hydrolysis examples include n-pentane, i-pentane, n-hexane, i-hexane, n-heptane, i-heptane, 2,2,4-trimethylpentane, n-octane, i- Aliphatic hydrocarbon solvents such as octane, cyclohexane and methylcyclohexane; benzene, toluene, xylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propyl benzene, i-propyl benzene, diethylbenzene, i-butylbenzene, triethylbenzene, di -Aromatic hydrocarbon solvents such as i-propyl benzene, n-amyl naphthalene, trimethylbenzene; methanol, ethanol, n-
- solvents can be used alone or in combination of two or more.
- acetone methyl ethyl ketone, methyl-n-propyl ketone, methyl-n-butyl ketone, diethyl ketone, methyl-i-butyl ketone, methyl-n-pentyl ketone, ethyl-n-butyl ketone, methyl-n-hexyl ketone, di- Ketone solvents such as i-butyl ketone, trimethylnonanone, cyclohexanone, methylcyclohexanone, 2,4-pentanedione, acetonylacetone, diacetone alcohol, acetophenone, fenchon (1,1,3-trimethyl-2-norbornene) Is preferable from the viewpoint of storage stability of the solution.
- Hydrolyzable organosilane is hydrolyzed and condensed in a solvent using a catalyst, and the resulting hydrolyzed condensate (polymer) simultaneously removes by-product alcohol, used hydrolysis catalyst, and water by distillation under reduced pressure. can do.
- the acid and base catalyst used for hydrolysis can be removed by neutralization or ion exchange.
- the resist underlayer film forming composition for lithography of the present invention the resist underlayer film forming composition containing the hydrolysis condensate is added with an acid (for example, an organic acid), water, alcohol, or a combination thereof for stabilization. can do.
- organic acid examples include oxalic acid, malonic acid, methylmalonic acid, succinic acid, maleic acid, malic acid, tartaric acid, phthalic acid, citric acid, glutaric acid, citric acid, lactic acid, and salicylic acid. Of these, oxalic acid and maleic acid are preferred.
- the organic acid to be added is 0.5 to 5.0 parts by mass with respect to 100 parts by mass of the condensate (polyorganosiloxane).
- pure water, ultrapure water, ion exchange water, etc. can be used for the water to add, The addition amount can be 1 thru
- alcohol to add what is easy to be scattered by the heating after application
- coating is preferable, for example, methanol, ethanol, propanol, isopropanol, a butanol etc. are mentioned.
- the added alcohol can be 1 to 20 parts by mass with respect to 100 parts by mass of the resist underlayer film forming composition.
- bisphenol S or a bisphenol S derivative can be added as an additive.
- Bisphenol S or a bisphenol S derivative is 0.01 to 20 parts by mass, 0.01 to 10 parts by mass, or 0.01 to 5 parts by mass with respect to 100 parts by mass of the polyorganosiloxane.
- Preferred bisphenol S or bisphenol S derivatives are exemplified below.
- the underlayer film forming composition for lithography of the present invention can contain an organic polymer compound, a photoacid generator, a surfactant, and the like, if necessary, in addition to the above components.
- an organic polymer compound By using an organic polymer compound, the dry etching rate (thickness reduction per unit time), attenuation coefficient, refractive index, etc. of the resist underlayer film formed from the underlayer film forming composition for lithography of the present invention are adjusted. can do.
- an organic polymer compound A various organic polymer can be used. Polycondensation polymers and addition polymerization polymers can be used.
- Addition polymerization polymers and condensation polymerization polymers such as polyester, polystyrene, polyimide, acrylic polymer, methacrylic polymer, polyvinyl ether, phenol novolak, naphthol novolak, polyether, polyamide, and polycarbonate can be used.
- An organic polymer having an aromatic ring structure such as a benzene ring, a naphthalene ring, an anthracene ring, a triazine ring, a quinoline ring, and a quinoxaline ring that functions as a light absorption site is preferably used.
- organic polymer compounds include addition polymerizable monomers such as benzyl acrylate, benzyl methacrylate, phenyl acrylate, naphthyl acrylate, anthryl methacrylate, anthryl methyl methacrylate, styrene, hydroxystyrene, benzyl vinyl ether, and N-phenylmaleimide. And an addition polymerization polymer containing as a structural unit thereof, and a condensation polymerization polymer such as phenol novolak and naphthol novolak. When an addition polymerization polymer is used as the organic polymer compound, the polymer compound may be a homopolymer or a copolymer.
- An addition polymerizable monomer is used for the production of the addition polymerization polymer.
- addition polymerizable monomers include acrylic acid, methacrylic acid, acrylic ester compounds, methacrylic ester compounds, acrylamide compounds, methacrylamide compounds, vinyl compounds, styrene compounds, maleimide compounds, maleic anhydride, acrylonitrile and the like. It is done.
- acrylic ester compounds include methyl acrylate, ethyl acrylate, normal hexyl acrylate, isopropyl acrylate, cyclohexyl acrylate, benzyl acrylate, phenyl acrylate, anthryl methyl acrylate, 2-hydroxyethyl acrylate, 3-chloro-2-hydroxypropyl acrylate, 2-hydroxypropyl acrylate, 2,2,2-trifluoroethyl acrylate, 2,2,2-trichloroethyl acrylate, 2-bromoethyl acrylate, 4-hydroxybutyl acrylate, 2-methoxyethyl acrylate, tetrahydrofurfuryl acrylate, 5-acryloyloxy-6-hydroxynorbornene-2-carboxyl-6-lactone, 3-acryloxypro Examples include pyrtriethoxysilane and glycidyl acrylate.
- Methacrylic acid ester compounds include methyl methacrylate, ethyl methacrylate, normal hexyl methacrylate, isopropyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, phenyl methacrylate, anthryl methyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 2,2, 2-trifluoroethyl methacrylate, 2,2,2-trichloroethyl methacrylate, 2-bromoethyl methacrylate, 4-hydroxybutyl methacrylate, 2-methoxyethyl methacrylate, tetrahydrofurfuryl methacrylate, 5-methacryloyloxy-6-hydroxynorbornene 2-carboxyl-6-lactone, 3-methacryloxypropyl Examples include reethoxysilane, glycidyl methacrylate, 2-phenylethyl
- Examples of the acrylamide compound include acrylamide, N-methylacrylamide, N-ethylacrylamide, N-benzylacrylamide, N-phenylacrylamide, N, N-dimethylacrylamide and N-anthrylacrylamide.
- Examples include methacrylamide compounds, methacrylamide, N-methyl methacrylamide, N-ethyl methacrylamide, N-benzyl methacrylamide, N-phenyl methacrylamide, N, N-dimethyl methacrylamide and N-anthryl acrylamide.
- vinyl compounds include vinyl alcohol, 2-hydroxyethyl vinyl ether, methyl vinyl ether, ethyl vinyl ether, benzyl vinyl ether, vinyl acetic acid, vinyl trimethoxysilane, 2-chloroethyl vinyl ether, 2-methoxyethyl vinyl ether, vinyl naphthalene, and vinyl anthracene.
- styrene compound include styrene, hydroxystyrene, chlorostyrene, bromostyrene, methoxystyrene, cyanostyrene, and acetylstyrene.
- maleimide compound examples include maleimide, N-methylmaleimide, N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, N-hydroxyethylmaleimide and the like.
- examples of such a polymer include a polycondensation polymer of a glycol compound and a dicarboxylic acid compound.
- examples of the glycol compound include diethylene glycol, hexamethylene glycol, butylene glycol and the like.
- dicarboxylic acid compound examples include succinic acid, adipic acid, terephthalic acid, and maleic anhydride. Examples thereof include polyesters such as polypyromellitimide, poly (p-phenylene terephthalamide), polybutylene terephthalate, and polyethylene terephthalate, polyamide, and polyimide.
- the organic polymer compound contains a hydroxy group
- this hydroxy group can form a crosslinking reaction with the polyorganosiloxane.
- a polymer compound having a weight average molecular weight of, for example, 1,000 to 1,000,000, 3,000 to 300,000, 5,000 to 200,000, or 10,000 to 100,000 can be used. Only one organic polymer compound can be used, or two or more organic polymer compounds can be used in combination.
- the proportion thereof is 1 to 200 parts by mass, 5 to 100 parts by mass, or 10 to 50 parts by mass, or 20 with respect to 100 parts by mass of the condensate (polyorganosiloxane). Thru
- the resist underlayer film forming composition of the present invention may contain an acid generator.
- the acid generator include a thermal acid generator and a photoacid generator.
- the photoacid generator generates an acid when the resist is exposed. Therefore, the acidity of the lower layer film can be adjusted. This is a method for matching the acidity of the lower layer film with the acidity of the upper layer resist. Further, the pattern shape of the resist formed in the upper layer can be adjusted by adjusting the acidity of the lower layer film.
- Examples of the photoacid generator contained in the resist underlayer film forming composition of the present invention include onium salt compounds, sulfonimide compounds, and disulfonyldiazomethane compounds.
- onium salt compounds include diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoronormalbutanesulfonate, diphenyliodonium perfluoronormaloctanesulfonate, diphenyliodonium camphorsulfonate, bis (4-tert-butylphenyl) iodonium camphor.
- Iodonium salt compounds such as sulfonate and bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate, and triphenylsulfonium hexafluoroantimonate, triphenylsulfonium nonafluoronormal butanesulfonate, triphenylsulfonium camphorsulfonate, and triphenylsulfone Sulfonium salt compounds such as trifluoromethane sulfonate and the like.
- sulfonimide compounds include N- (trifluoromethanesulfonyloxy) succinimide, N- (nonafluoronormalbutanesulfonyloxy) succinimide, N- (camphorsulfonyloxy) succinimide and N- (trifluoromethanesulfonyloxy) naphthalimide. Can be mentioned.
- disulfonyldiazomethane compound examples include bis (trifluoromethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, and bis (2,4-dimethylbenzenesulfonyl).
- Diazomethane methylsulfonyl-p-toluenesulfonyldiazomethane, and the like.
- a photo-acid generator can use only 1 type, or can be used in combination of 2 or more type.
- the proportion thereof is 0.01 to 5 parts by mass, 0.1 to 3 parts by mass, or 0.5 with respect to 100 parts by mass of the condensate (polyorganosiloxane). Thru
- the surfactant is effective in suppressing the occurrence of pinholes and installations when the resist underlayer film forming composition for lithography of the present invention is applied to a substrate.
- Examples of the surfactant contained in the resist underlayer film forming composition of the present invention include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether.
- surfactants may be used alone or in combination of two or more.
- the ratio is 0.0001 to 5 parts by mass, or 0.001 to 1 part by mass, or 0.01 to 0 with respect to 100 parts by mass of the condensate (polyorganosiloxane). .5 parts by mass.
- a rheology modifier, an adhesion aid, and the like can be added to the resist underlayer film forming composition of the present invention.
- the rheology modifier is effective in improving the fluidity of the underlayer film forming composition.
- the adhesion aid is effective for improving the adhesion between the semiconductor substrate or resist and the lower layer film.
- a solvent used for the resist underlayer film forming composition of the present invention any solvent can be used without particular limitation as long as it can dissolve the solid content.
- solvents examples include methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, methyl isobutyl carbinol, propylene glycol monobutyl ether, propylene glycol monomethyl ether acetate, propylene glycol mono Ether ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate , Ethyl hydroxyacetate, 2-hy Roxy-3-methylbutanoate, methyl 3-methoxypropionate, ethyl 3-methoxyprop
- the resist underlayer film forming composition of the present invention is applied by an appropriate application method such as a spinner or a coater, and then baked to form a resist underlayer film.
- the conditions for firing are appropriately selected from firing temperatures of 80 ° C. to 250 ° C. and firing times of 0.3 to 60 minutes.
- the firing temperature is 150 ° C.
- the thickness of the lower layer film to be formed is, for example, 10 to 1000 nm, 20 to 500 nm, 50 to 300 nm, or 100 to 200 nm.
- a photoresist layer for example, is formed on the resist underlayer film. Formation of the photoresist layer can be performed by a well-known method, that is, by applying a photoresist composition solution onto the lower layer film and baking.
- the film thickness of the photoresist is, for example, 50 to 10,000 nm, 100 to 2000 nm, or 200 to 1000 nm.
- the resist underlayer film of the present invention can be formed thereon and further coated with a photoresist.
- the pattern width of the photoresist becomes narrow, and even when the photoresist is thinly coated to prevent pattern collapse, the substrate can be processed by selecting an appropriate etching gas.
- the organic underlayer film can be processed using an oxygen-based gas as an etching gas, and the substrate can be processed using a fluorine-based gas that has a sufficiently high etching rate for the organic underlayer film as an etching gas.
- the photoresist formed on the resist underlayer film of the present invention is not particularly limited as long as it is sensitive to light used for exposure. Either a negative photoresist or a positive photoresist can be used.
- a positive photoresist comprising a novolac resin and 1,2-naphthoquinonediazide sulfonic acid ester, a chemically amplified photoresist comprising a binder having a group capable of decomposing by an acid and increasing the alkali dissolution rate and a photoacid generator, an acid
- a chemically amplified photoresist comprising a low-molecular compound that decomposes to increase the alkali dissolution rate of the photoresist, an alkali-soluble binder, and a photoacid generator, and a binder having a group that decomposes with an acid to increase the alkali dissolution rate
- a chemically amplified photoresist composed of a low molecular weight compound that decomposes with an acid to increase the alkali dissolution rate of the photoresist and a photoacid generator.
- Examples include trade name APEX-E manufactured by Shipley, trade name PAR710 manufactured by Sumitomo Chemical Co., Ltd., and trade name SEPR430 manufactured by Shin-Etsu Chemical Co., Ltd. Also, for example, Proc. SPIE, Vol. 3999, 330-334 (2000), Proc. SPIE, Vol. 3999, 357-364 (2000), Proc. SPIE, Vol. 3999, 365-374 (2000), and fluorine-containing polymer-based photoresists.
- a KrF excimer laser (wavelength 248 nm), an ArF excimer laser (wavelength 193 nm), an F2 excimer laser (wavelength 157 nm), or the like can be used.
- post-exposure bake can be performed as necessary.
- the post-exposure heating is performed under conditions appropriately selected from a heating temperature of 70 ° C. to 150 ° C. and a heating time of 0.3 to 10 minutes.
- a resist for electron beam lithography or a resist for EUV lithography can be used instead of a photoresist as a resist.
- the electron beam resist either a negative type or a positive type can be used.
- Chemically amplified resist comprising a binder having a group that decomposes with an acid generator and an acid to change the alkali dissolution rate, a low molecular weight compound that decomposes with an alkali-soluble binder, an acid generator and an acid to change the alkali dissolution rate of the resist
- a chemically amplified resist comprising: a binder having a group that decomposes with an acid generator and an acid to change the alkali dissolution rate; and a chemically amplified resist comprising a low-molecular compound that decomposes with an acid to change the alkali dissolution rate of the resist,
- non-chemically amplified resists composed of a binder having a group that changes the alkali dissolution rate by being decomposed by an electron beam and non-chemically amplified resists composed of a binder having a portion that is cut by an electron beam to change the alkali dissolution rate.
- Developers include aqueous solutions of alkali metal hydroxides such as potassium hydroxide and sodium hydroxide, aqueous solutions of quaternary ammonium hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline, ethanolamine, propylamine, An alkaline aqueous solution such as an aqueous amine solution such as ethylenediamine can be mentioned as an example.
- alkali metal hydroxides such as potassium hydroxide and sodium hydroxide
- quaternary ammonium hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline
- ethanolamine propylamine
- An alkaline aqueous solution such as an aqueous amine solution such as ethylenediamine can be mentioned as an example.
- a surfactant or the like can be added to these developers.
- the development conditions are appropriately selected from a temperature of 5 to 50 ° C. and a time of 10 to 600 seconds.
- an organic solvent can be used as a developer.
- development is performed with a developer (solvent).
- a developer solvent
- Examples of the developer include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxy acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl Ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol Monoethyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-me
- the resist underlayer film (intermediate layer) of the present invention is removed using the photoresist (upper layer) pattern thus formed as a protective film, and then the patterned photoresist and the resist underlayer film of the present invention are removed.
- the organic underlayer film (lower layer) is removed using the film made of (intermediate layer) as a protective film.
- the semiconductor substrate is processed using the patterned resist underlayer film (intermediate layer) and organic underlayer film (lower layer) of the present invention as a protective film.
- the resist underlayer film (intermediate layer) of the present invention in a portion where the photoresist has been removed is removed by dry etching to expose the semiconductor substrate.
- tetrafluoromethane CF 4
- perfluorocyclobutane C 4 F 8
- perfluoropropane C 3 F 8
- trifluoromethane carbon monoxide
- gases such as nitrogen, sulfur hexafluoride, difluoromethane, nitrogen trifluoride and chlorine trifluoride, chlorine, trichloroborane and dichloroborane
- a halogen-based gas for dry etching of the resist underlayer film.
- a photoresist made of an organic substance is basically difficult to remove.
- the resist underlayer film of the present invention containing a large amount of silicon atoms is quickly removed by the halogen-based gas. Therefore, it is possible to suppress a decrease in the film thickness of the photoresist accompanying dry etching of the resist underlayer film. As a result, the photoresist can be used as a thin film.
- the dry etching of the resist underlayer film is preferably performed using a fluorine-based gas.
- the fluorine-based gas include tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), and perfluoropropane (C 3 F 8 ). , Trifluoromethane, and difluoromethane (CH 2 F 2 ).
- the organic underlayer film is removed using the patterned photoresist and the film made of the resist underlayer film of the present invention as a protective film.
- the organic underlayer film (underlayer) is preferably formed by dry etching with an oxygen-based gas. This is because the resist underlayer film of the present invention containing a large amount of silicon atoms is difficult to remove by dry etching with an oxygen-based gas.
- the semiconductor substrate is processed. The semiconductor substrate is preferably processed by dry etching with a fluorine-based gas.
- an organic antireflection film can be formed on the resist underlayer film of the present invention before forming the photoresist.
- the antireflective coating composition used there is not particularly limited, and can be arbitrarily selected from those conventionally used in the lithography process, and can be used by a conventional method such as a spinner.
- the antireflection film can be formed by coating and baking with a coater.
- the substrate to which the resist underlayer film forming composition of the present invention is applied may have an organic or inorganic antireflection film formed on the surface thereof by a CVD method or the like.
- the underlayer film of the invention can also be formed.
- the resist underlayer film formed from the resist underlayer film forming composition of the present invention may have absorption of the light depending on the wavelength of light used in the lithography process. In such a case, it can function as an antireflection film having an effect of preventing reflected light from the substrate. Further, the underlayer film of the present invention has a function for preventing an adverse effect on a substrate of a layer for preventing an interaction between the substrate and the photoresist, a material used for the photoresist or a substance generated upon exposure to the photoresist.
- the resist underlayer film formed from the resist underlayer film forming composition is applied to a substrate on which via holes used in the dual damascene process are formed, and can be used as a filling material that can fill the holes without any gaps. Moreover, it can also be used as a planarizing material for planarizing the surface of an uneven semiconductor substrate.
- the EUV resist underlayer film can be used for the following purposes in addition to the function as a hard mask. Without intermixing with the EUV resist, it is possible to prevent reflection of unwanted exposure light such as UV and DUV (ArF light, KrF light) from the substrate or interface during EUV exposure (wavelength 13.5 nm).
- the resist underlayer film forming composition can be used as a resist underlayer antireflection film. Reflection can be efficiently prevented in the lower layer of the EUV resist.
- the process can be performed in the same manner as the photoresist underlayer film.
- Triethylamine hydrochloride produced by the reaction was removed by filtration, and the filtrate was separated with ethyl acetate and water after removing the solvent with an evaporator.
- the organic layer was dehydrated with magnesium sulfate, filtered, and ethyl acetate was removed by an evaporator to obtain a crude product.
- the crude product was distilled under reduced pressure to obtain the target compound 1 (formula (1-1), X is an ethoxy group).
- reaction solution is cooled to room temperature, 21 g of propylene glycol monomethyl ether acetate is added to the reaction solution, and ethanol, water and hydrochloric acid as reaction by-products are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol.
- a monomethyl ether acetate solution was obtained.
- Propylene glycol monoethyl ether was added, and the solvent ratio of propylene glycol monomethyl ether acetate / propylene glycol monoethyl ether 20/80 was adjusted to 15 weight percent in terms of solid residue at 140 ° C.
- the product was mainly composed of the polymer of formula (E-1), and a hydrolyzate and a monomer were present.
- the weight average molecular weight of the polymer by GPC was Mw 1600 in terms of polystyrene.
- reaction solution is cooled to room temperature, 21 g of propylene glycol monomethyl ether acetate is added to the reaction solution, and ethanol, water and hydrochloric acid as reaction by-products are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol.
- a monomethyl ether acetate solution was obtained.
- Propylene glycol monoethyl ether was added, and the solvent ratio of propylene glycol monomethyl ether acetate / propylene glycol monoethyl ether 20/80 was adjusted to 15 weight percent in terms of solid residue at 140 ° C.
- the product was mainly composed of the polymer of formula (E-2), and a hydrolyzate and a monomer were present.
- the weight average molecular weight of the polymer by GPC was Mw 1700 in terms of polystyrene.
- reaction solution is cooled to room temperature, 21 g of propylene glycol monoethyl ether is added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction byproducts are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol.
- a monoethyl ether solution was obtained.
- Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C.
- the product was mainly composed of the polymer of formula (A-1), and a hydrolyzate and a monomer were present.
- the weight average molecular weight of the polymer by GPC was Mw 1700 in terms of polystyrene.
- reaction solution is cooled to room temperature, 21 g of propylene glycol monoethyl ether is added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction byproducts are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol.
- a monoethyl ether solution was obtained.
- Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C.
- the product was mainly composed of the polymer of formula (A-2), and a hydrolyzate and a monomer were present.
- the weight average molecular weight of the polymer by GPC was Mw 1800 in terms of polystyrene.
- reaction solution is cooled to room temperature, 21 g of propylene glycol monomethyl ether acetate is added to the reaction solution, and ethanol, water and hydrochloric acid as reaction by-products are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol.
- a monomethyl ether acetate solution was obtained.
- Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C.
- the product was mainly composed of the polymer of the formula (E-3), and a hydrolyzate and a monomer were present.
- the weight average molecular weight of the polymer by GPC was Mw 1600 in terms of polystyrene.
- the flask was transferred to an oil bath adjusted to 85 ° C., and reacted for 240 minutes under heating and reflux. Thereafter, the reaction solution is cooled to room temperature, 21 g of propylene glycol monomethyl ether acetate is added to the reaction solution, and ethanol, water and hydrochloric acid as reaction by-products are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol. A monomethyl ether acetate solution was obtained. Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C. The product was mainly composed of the polymer of formula (E-4), and a hydrolyzate and a monomer were present. The weight average molecular weight of the polymer by GPC was Mw 1600 in terms of polystyrene.
- the flask was transferred to an oil bath adjusted to 85 ° C., and reacted for 240 minutes under heating and reflux. Thereafter, the reaction solution is cooled to room temperature, 21 g of propylene glycol monoethyl ether is added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction byproducts are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol. A monoethyl ether solution was obtained. Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C. The product was mainly composed of the polymer of formula (A-3), and a hydrolyzate and a monomer were present. The weight average molecular weight of the polymer by GPC was Mw 1700 in terms of polystyrene.
- the flask was transferred to an oil bath adjusted to 85 ° C., and reacted for 240 minutes under heating and reflux. Thereafter, the reaction solution is cooled to room temperature, 21 g of propylene glycol monoethyl ether is added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction byproducts are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol. A monoethyl ether solution was obtained. Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C. The product was mainly composed of the polymer of formula (A-4), and a hydrolyzate and a monomer were present. The weight average molecular weight of the polymer by GPC was Mw 1800 in terms of polystyrene.
- the flask was transferred to an oil bath adjusted to 85 ° C., and reacted for 240 minutes under heating and reflux. Thereafter, the reaction solution is cooled to room temperature, 21 g of propylene glycol monoethyl ether is added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction byproducts are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol. A monoethyl ether solution was obtained. Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C. The product was mainly composed of the polymer of formula (E-5), and a hydrolyzate and a monomer were present. The weight average molecular weight of the polymer by GPC was Mw 1700 in terms of polystyrene.
- the flask was transferred to an oil bath adjusted to 85 ° C., and reacted for 240 minutes under heating and reflux. Thereafter, the reaction solution is cooled to room temperature, 21 g of propylene glycol monoethyl ether is added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction byproducts are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol. A monoethyl ether solution was obtained. Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C. The product was mainly composed of the polymer of formula (E-6), and a hydrolyzate and a monomer were present. The weight average molecular weight of the polymer by GPC was Mw 1600 in terms of polystyrene.
- the flask was transferred to an oil bath adjusted to 85 ° C., and reacted for 240 minutes under heating and reflux. Thereafter, the reaction solution is cooled to room temperature, 21 g of propylene glycol monoethyl ether is added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction byproducts are distilled off under reduced pressure, and concentrated to hydrolyzed condensate (polymer) propylene glycol. A monoethyl ether solution was obtained. Propylene glycol monoethyl ether was added and adjusted to 15 weight percent in terms of solid residue at 140 ° C. The product was mainly composed of the polymer of the formula (E-7), and a hydrolyzate and a monomer were present. The weight average molecular weight of the polymer by GPC was Mw 1700 in terms of polystyrene.
- Si-containing resist underlayer film forming compositions prepared in Examples 1 to 14 and Comparative Examples 1 to 7 were applied onto a silicon wafer using a spinner.
- a Si-containing resist underlayer film (thickness 0.05 ⁇ m) was formed by heating on a hot plate at 200 ° C. for 1 minute.
- These resist underlayer films were then analyzed using a spectroscopic ellipsometer (manufactured by JA Woollam, VUV-VASE VU-302), and the refractive index (n value) and optical absorption coefficient (k value, attenuation coefficient) at a wavelength of 193 nm. Also called).
- the mixture is filtered using a polyethylene microfilter having a pore size of 0.10 ⁇ m, and further filtered using a polyethylene microfilter having a pore size of 0.05 ⁇ m, so that the organic resist underlayer film forming composition used in the lithography process using a multilayer film A solution was prepared.
- the organic underlayer film (A layer) forming composition obtained by the above formula was applied onto a silicon wafer and baked on a hot plate at 240 ° C. for 60 seconds to obtain an organic underlayer film (A layer) having a thickness of 200 nm. .
- the Si-containing resist underlayer film (B layer) forming composition obtained in Examples 1 to 10 and Comparative Examples 1 to 7 was applied and baked on a hot plate at 240 ° C. for 45 seconds.
- a Si-containing resist underlayer film (B layer) was obtained.
- the film thickness of the Si-containing resist underlayer film (B layer) was 45 nm.
- the target was exposed through a mask set so as to form a so-called line and space (dense line) in which the line width of the photoresist and the width between the lines were 0.065 ⁇ m after development.
- the substrate was baked on a hot plate at 110 ° C. for 60 seconds, cooled, and developed with an aqueous tetramethylammonium hydroxide solution (developer) having a concentration of 2.38% by mass in a single paddle process for 60 seconds.
- developer aqueous tetramethylammonium hydroxide solution
- a resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask. Further, intermixing with the top coat resist is not caused.
- the fluorine-based etching gas has a higher dry etching rate than the resist, and the resist pattern can be transferred to the resist underlayer film of this application.
- the oxygen-based etching gas exhibits etching resistance, and the resist pattern is formed on the organic underlayer film. Can be transferred.
- a resist underlayer film forming composition for forming a resist underlayer film that can be processed into a substrate with a rectangular pattern is provided.
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Abstract
Description
近年、半導体デバイスの高集積度化が進み、使用される活性光線もKrFエキシマレーザー(248nm)からArFエキシマレーザー(193nm)、EUV光(13.5nm)へと短波長化される傾向にある。これに伴い活性光線の半導体基板からの反射の影響が大きな問題となってきた。
このため、近年の半導体装置の製造においては、反射防止効果を始め、さまざまな効果を達成するために、半導体基板とフォトレジストの間にレジスト下層膜が配置されるようになってきている。
例えば、半導体基板とフォトレジストとの間の下層膜として、シリコン等の金属元素を含むハードマスクとして知られる膜を使用することが行なわれている(例えば、特許文献1参照)。この場合、レジストとハードマスクでは、その構成成分に大きな違いが有るため、それらのドライエッチングによって除去される速度は、ドライエッチングに使用されるガス種に大きく依存する。そして、ガス種を適切に選択することにより、フォトレジストの膜厚の大きな減少を伴うことなく、ハードマスクをドライエッチングによって除去することが可能となる。このようにレジスト下層膜用の組成物の検討が行なわれてきているが、その要求される特性の多様性などから、レジスト下層膜用の新たな材料の開発が望まれている。
また、別の観点から基板の表面を改質する方法もある。例えば、スルホニル基を有するシランカップリング剤を用いて露光後の表面を親水性に変化させる方法が開示されている(特許文献2を参照)。
また、スルホンアミド基を有するシリコン含有レジスト下層膜が開示されている(特許文献3、4を参照)。
式(1-b)中、R6、R7、R9、及びR10のうち少なくとも1つの基は、炭素原子数1乃至10のアルキレン基の末端に-Si(X)3基が結合した基を表し、残りの基は水素原子、炭素原子数1乃至10のアルキル基、又は炭素原子数6乃至40のアリール基を表し、R5及びR8は炭素原子数1乃至10のアルキレン基、又は炭素原子数6乃至40のアリーレン基を表す。但し上記Xはアルコキシ基、アシルオキシ基、又はハロゲン原子を表す。)、
第2観点として、シランとして加水分解性オルガノシラン、その加水分解物及びその加水分解縮合物のうちの少なくとも1種を含み、該シランが請求項1に記載の式(1-a)又は式(1-b)で表されるシラン化合物を含むリソグラフィー用レジスト下層膜形成組成物、
第3観点として、上記式(1-a)で表されるシラン化合物が下記式(2):
第4観点として、前記シランが式(3):
第5観点として、上記式(1-a)又は式(1-b)で表されるシラン化合物の加水分解縮合物、及び式(1-a)又は式(1-b)で表されるシラン化合物と式(3)で表される有機ケイ素化合物との加水分解縮合物のうちの少なくとも1種をポリマーとして含む第2観点乃至第4観点のいずれか一つに記載の組成物、
第6観点として、更に酸を含む第2観点乃至第5観点のいずれか一つに記載の組成物、
第7観点として、更に水を含む第2観点乃至第6観点のいずれか一つに記載の組成物、
第8観点として、第2観点乃至第7観点のいずれか一つに記載のレジスト下層膜形成組成物を半導体基板上に塗布し焼成することによって得られるレジスト下層膜、
第9観点として、第2観点乃至第7観点のいずれか一つに記載のレジスト下層膜形成組成物を半導体基板上に塗布し、焼成してレジスト下層膜を形成する工程、前記レジスト下層膜の上にレジスト用組成物を塗布しレジスト膜を形成する工程、前記レジスト膜を露光する工程、露光後にレジスト膜を現像してパターン化されたレジスト膜を得る工程、該パターン化されたレジスト膜のパターンに従いレジスト下層膜をエッチングする工程、並びにレジスト膜及びレジスト下層膜のパターンに従い半導体基板を加工する工程を含む半導体装置の製造方法、
第10観点として、半導体基板上に有機下層膜を形成する工程、その上に第2観点乃至第7観点のいずれか一つに記載のレジスト下層膜形成組成物を塗布し、焼成してレジスト下層膜を形成する工程、前記レジスト下層膜の上にレジスト用組成物を塗布しレジスト膜を形成する工程、前記レジスト膜を露光する工程、露光後に前記レジスト膜を現像してパターン化されたレジスト膜を得る工程、該パターン化されたレジスト膜のパターンに従いレジスト下層膜をエッチングする工程、該パターン化されたレジスト下層膜のパターンに従い有機下層膜をエッチングする工程、及び該パターン化された有機下層膜のパターンに従い半導体基板を加工する工程を含む半導体装置の製造方法に関する。
また、本発明のレジスト下層膜形成組成物は、式(1-a)又は式(1-b)で表されるシラン化合物が加水分解性基が加水分解又は部分加水分解して縮合反応することによりポリオルガノシロキサン構造を形成することができるものであることから、半導体装置の製造においてハードマスク及び反射防止膜として機能し得、そしてレジストとのインターミキシングを起こしにくいレジスト下層膜を形成することができる。
微細なパターンを形成する上で、パターン倒れを防ぐためにレジスト膜厚が薄くなる傾向がある。レジストの薄膜化によりその下層に存在する膜にパターンを転写するためのドライエッチングは、上層の膜よりもエッチング速度が高くなければパターン転写ができない。本発明では基板上に有機下層膜を介するか、又は有機下層膜を介さず、その上に本願レジスト下層膜(無機系シリコン系化合物含有)を被覆し、その上にレジスト膜(有機レジスト膜)の順で被覆される。有機系成分の膜と無機系成分の膜はエッチングガスの選択によりドライエッチング速度が大きく異なり、有機系成分の膜は酸素系ガスでドライエッチング速度が高くなり、無機系成分の膜はハロゲン含有ガスでドライエッチング速度が高くなる。
例えばレジストパターンが形成され、その下層に存在している本願レジスト下層膜をハロゲン含有ガスでドライエッチングしてレジスト下層膜にパターンを転写し、そのレジスト下層膜に転写されたパターンでハロゲン含有ガスを用いて基板加工を行う。あるいは、パターン転写されたレジスト下層膜を用いて、その下層の有機下層膜を酸素系ガスでドライエッチングして有機下層膜にパターン転写を行って、そのパターン転写された有機下層膜で、ハロゲン含有ガスを用いて基板加工を行う。
本発明では当該レジスト下層膜がハードマスクとして機能するものであり、上記式(1)、(2)の構造中のアルコキシ基やアシロキシ基、ハロゲン原子等の加水分解性基は加水分解乃至部分加水分解し、その後にシラノール基の縮合反応によりポリシロキサン構造のポリマーを形成する。このポリオルガノシロキサン構造はハードマスクとしての十分な機能を有している。
そして、ポリオルガノシロキサン構造(中間膜)は、その下に存在する有機下層膜のエッチングや、基板の加工(エッチング)にハードマスクとして有効である。即ち、基板加工時や有機下層膜の酸素系ドライエッチングガスに対して十分な耐ドライエッチング性を有するものである。
本発明のレジスト下層膜がこれらの上層レジストに対するドライエッチング速度の向上と、基板加工時等の耐ドライエッチング性を具備するものである。
本発明のレジスト下層膜形成組成物によるレジスト下層膜は、スルホニル基と吸光基を含む有機基を含むシラン化合物、その加水分解物、その加水分解縮合物を含有することにより、露光と現像後のレジストパターンの形状が矩形になる。これにより微細なパターンによる基板加工が可能になる。
例えば特許文献に記載のスルホンアミド基を有するシラン化合物を用いたレジスト下層膜によるレジストパターンはフッティング傾向になりやすいが、本件発明のスルホン構造とアミノ構造を有するシラン化合物を用いたレジスト下層膜はレジストパターンのフッティング傾向を改善することができる。
そして、本発明はシランとして加水分解性オルガノシラン、その加水分解物、及びその加水分解縮合物のうちの少なくとも1種含み、該シランが式(1-a)又は式(1-b)で表されるシラン化合物であるリソグラフィー用レジスト下層膜形成組成物に関する。
シラン全体中で式(1-a)又は式(1-b)で表されるシランの割合が50モル%未満、例えば0.5乃至30モル%、0.5乃至25モル%、0.5乃至15モル%、又は0.5乃至10モル%の割合で含有することができる。
本発明のレジスト下層膜形成組成物は、式(1-a)又は式(1-b)で表されるシラン化合物である加水分解性オルガノシラン、その加水分解物、又はその加水分解縮合物と、溶剤とを含む。そして任意成分として酸、水、アルコール、硬化触媒、酸発生剤、他の有機ポリマー、吸光性化合物、及び界面活性剤等を含むことができる。
また、本発明では、式(1-a)で表されるシラン化合物と式(1-b)で表されるシラン化合物とを併用することができ、本発明のレジスト下層膜形成組成物は、式(1-a)で表されるシラン化合物、式(1-b)で表されるシラン化合物、式(1-a)で表されるシラン化合物の加水分解物、式(1-b)で表されるシラン化合物の加水分解物、式(1-a)で表されるシラン化合物の加水分解縮合物、式(1-b)で表されるシラン化合物の加水分解縮合物及び式(1-a)で表されるシラン化合物と式(1-b)で表されるシラン化合物との加水分解縮合物、のうち1種又は2種以上を含むことができる。
本発明のレジスト下層膜形成組成物における固形分は、例えば0.1乃至50質量%、又は0.1乃至30質量%、0.1乃至25質量%である。ここで固形分とはレジスト下層膜形成組成物の全成分から溶剤成分を除いたものである。
固形分中に占める加水分解性オルガノシラン、その加水分解物、及びその加水分解縮合物の割合は、20質量%以上であり、例えば50乃至100質量%、60乃至100質量%、70乃至100質量%である。
本発明に用いられる加水分解性オルガノシランは式(1-a)又は式(1-b)で表される構造を有する。
式(1-a)で表されるシラン化合物の例として、式(2)で表されるシラン化合物を例示することができる。
式(1)中、R1、R3、及びR4のうち少なくとも1つの基は、炭素原子数1乃至10のアルキレン基の末端に-Si(X)3基が結合した基を表し、残りの基は水素原子、炭素原子数1乃至10のアルキル基、又は炭素原子数6乃至40のアリール基を表し、R2は炭素原子数1乃至10のアルキレン基、又は炭素原子数6乃至40のアリーレン基を表す。但し上記Xはアルコキシ基、アシルオキシ基、又はハロゲン原子を表す。
式(2)中、R6、R7、R9、及びR10のうち少なくとも1つの基は、炭素原子数1乃至10のアルキレン基の末端に-Si(X)3基が結合した基を表し、残りの基は水素原子、炭素原子数1乃至10のアルキル基、又は炭素原子数6乃至40のアリール基を表し、R5及びR8は炭素原子数1乃至10のアルキレン基、又は炭素原子数6乃至40のアリーレン基を表す。但し上記Xはアルコキシ基、アシルオキシ基、又はハロゲン原子を表す。
また、炭素原子数1乃至10のアルキレン基は、上記アルキル基に対応するアルキレン基を挙げることができる。そして、メチレン基、エチレン基、プロピレン基を好ましく用いることもできる。
中でもフェニル基を好ましく用いることができる。
また、炭素原子数6乃至40のアリーレン基としては上記アリール基に対応するアリーレン基を挙げることができる。そして、フェニレン基を好ましく用いることができる。
上記加水分解性シランの加水分解基はアルコキシ基、アシルオキシ基、及びハロゲン原子が挙げられる。
炭素原子数2乃至20のアシルオキシ基は、例えばメチルカルボニルオキシ基、エチルカルボニルオキシ基、n-プロピルカルボニルオキシ基、i-プロピルカルボニルオキシ基、n-ブチルカルボニルオキシ基、i-ブチルカルボニルオキシ基、s-ブチルカルボニルオキシ基、t-ブチルカルボニルオキシ基、n-ペンチルカルボニルオキシ基、1-メチル-n-ブチルカルボニルオキシ基、2-メチル-n-ブチルカルボニルオキシ基、3-メチル-n-ブチルカルボニルオキシ基、1,1-ジメチル-n-プロピルカルボニルオキシ基等が挙げられる。
ハロゲン原子としてはフッ素、塩素、臭素、ヨウ素等が挙げられる。
式(1-a)で表されるシラン化合物、式(1-b)で表されるシラン化合物、及び式(2)で表されるシラン化合物(加水分解性オルガノシラン)は例えば以下に例示することができる。下記式中でXは上記アルコキシ基、上記アシルオキシ基、又は上記ハロゲン原子を表す。
また、本発明では上記式(1-a)又は式(1-b)で表されるシラン化合物(加水分解性オルガノシラン)の加水分解縮合物、及び式(1-a)又は式(1-b)で表されるシラン化合物(加水分解性オルガノシラン)と式(3)で表される有機ケイ素化合物(加水分解性オルガノシラン)との加水分解縮合物のうちの少なくとも1種を用いることができる。
更に、本発明では式(1-a)又は式(1-b)で表されるシラン化合物(加水分解性オルガノシラン)と、式(3)で表される有機ケイ素化合物(加水分解性オルガノシラン)を併用して使用することができる。式(1-a)又は式(1-b)で表されるシラン化合物(加水分解性オルガノシラン)、その加水分解物、及びその加水分解縮合物のうちの少なくとも1種と、式(3)で表される有機ケイ素化合物、その加水分解物、及びその加水分解縮合物のうちの少なくとも1種を併用して使用することができる。
また、本発明のレジスト下層膜形成組成物は、式(1-a)で表されるシラン化合物、式(1-b)で表されるシラン化合物、式(1-a)で表されるシラン化合物の加水分解物、式(1-b)で表されるシラン化合物の加水分解物、式(1-a)で表されるシラン化合物の加水分解縮合物、式(1-b)で表されるシラン化合物の加水分解縮合物、式(1-a)で表されるシラン化合物と式(1-b)で表されるシラン化合物との加水分解縮合物のうちの少なくとも1種と、
式(3)で表される有機ケイ素化合物、その加水分解物、その加水分解縮合物、式(1-a)で表されるシラン化合物と式(3)で表される有機ケイ素化合物との加水分解縮合物、式(1-b)で表されるシラン化合物と式(3)で表される有機ケイ素化合物との加水分解縮合物、及び式(1-a)で表されるシラン化合物と式(1-b)で表されるシラン化合物と式(3)で表される有機ケイ素化合物との加水分解縮合物のうちの少なくとも1種を併用して使用することができる。
上記の式(1-a)又は式(1-b)で表されるシラン化合物(加水分解性オルガノシラン)と、式(3)で表される有機ケイ素化合物との割合はモル比で1:0乃至1:200の範囲で使用することができる。良好なレジスト形状を得るためには式(1-a)又は式(1-b)で表されるシラン化合物(加水分解性オルガノシラン)と、式(3)で表される有機ケイ素化合物との割合はモル比で1:199乃至1:2の範囲で用いることができる。
これらは加水分解縮合物(ポリオルガノシロキサンのポリマー)として使用することが好ましく、式(1-a)又は式(1-b)で表されるシラン化合物(加水分解性オルガノシラン)と式(3)で表される有機ケイ素化合物(加水分解性オルガノシラン)との加水分解縮合物(ポリオルガノシロキサンのポリマー)を用いることが好ましい。
式(3)で表される有機ケイ素化合物(加水分解性オルガノシラン)中のR1はアルキル基、アリール基、アラルキル基、ハロゲン化アルキル基、ハロゲン化アリール基、ハロゲン化アラルキル基、アルケニル基、又はエポキシ基、アクリロイル基、メタクリロイル基、メルカプト基、アルコキシアリール基、アシルオキシアリール基、イソシアヌレート基、ヒドロキシ基、環状アミノ基、もしくはシアノ基を有する有機基、又はそれらの組み合わせであり、且つSi-C結合によりケイ素原子と結合しているものであり、R2はアルコキシ基、アシルオキシ基、又はハロゲン原子を表し、aは0乃至3の整数を表す。
R1、及びR2で表されるアルキル基、アリール基、アラルキル基、ハロゲン化アルキル基、ハロゲン化アリール基、ハロゲン化アラルキル基、アルケニル基、又はエポキシ基、アクリロイル基、メタクロロイル基、メルカプト基、アルコキシアリール基、アシルオキシアリール基、イソシアヌレート基、ヒドロキシ基、環状アミノ基、もしくはシアノ基を有する有機基、更には加水分解性基に含まれるアルコキシ基、アシルオキシ基、又はハロゲン原子は、上述式(1-a)及び式(1-b)に記載されたものを例示することができる。
特にテトラメトキシシラン、テトラエトキシシラン等のテトラアルコキシシランと、フェニルトリメトキシシラン、フェニルトリエトキシシラン等のフェニルトリアルコキシシランとの組み合わせが好ましい。更にこれらの組み合わせにメチルトリメトキシシラン、メチルトリエトキシシラン等のアルキルトリアルコキシシランを組み合わせることが好ましい。
上記アルキル基、アルコキシ基、アシルオキシ基、又はハロゲン原子は式(1-a)及び式(1-b)に例示したものを用いることができる。またアルキレン基、アリーレン基は上記アルキル基、及びアリール基に対応する2価の有機基を例示することができる。
式(4)で表される有機ケイ素化合物(加水分解性オルガノシラン)は例えば、メチレンビストリメトキシシラン、メチレンビストリクロロシラン、メチレンビストリアセトキシシラン、エチレンビストリエトキシシラン、エチレンビストリクロロシラン、エチレンビストリアセトキシシラン、プロピレンビストリエトキシシラン、ブチレンビストリメトキシシラン、フェニレンビストリメトキシシラン、フェニレンビストリエトキシシラン、フェニレンビスメチルジエトキシシラン、フェニレンビスメチルジメトキシシラン、ナフチレンビストリメトキシシラン、ビストリメトキシジシラン、ビストリエトキシジシラン、ビスエチルジエトキシジシラン、ビスメチルジメトキシジシラン等が挙げられる。
式(1-a)又は(1-b)で表されるシラン化合物(加水分解性オルガノシラン)と式(3)で表される有機ケイ素化合物(加水分解性オルガノシラン)との加水分解縮合物の具体例として以下に例示される。
GPCの測定条件は、例えばGPC装置(商品名HLC-8220GPC、東ソー株式会社製)、GPCカラム(商品名ShodexKF803L、KF802、KF801、昭和電工製)、カラム温度は40℃、溶離液(溶出溶媒)はテトラヒドロフラン、流量(流速)は1.0ml/min、標準試料はポリスチレン(昭和電工株式会社製)を用いて行うことができる。
アルコキシシリル基、アシロキシシリル基、又はハロゲン化シリル基の加水分解には、加水分解性基の1モル当たり、0.5乃至100モル、好ましくは1乃至10モルの水を用いる。
また、加水分解性基の1モル当たり0.001乃至10モル、好ましくは0.001乃至1モルの加水分解触媒を用いることができる。
加水分解と縮合を行う際の反応温度は、通常20乃至80℃である。
加水分解は完全に加水分解を行うことも、部分加水分解することでも良い。即ち、加水分解縮合物中に加水分解物やモノマーが残存していても良い。
加水分解し縮合させる際に触媒を用いることができる。
加水分解触媒としては、金属キレート化合物、有機酸、無機酸、有機塩基、無機塩基を挙げることができる。
加水分解触媒としての無機酸は、例えば塩酸、硝酸、硫酸、フッ酸、リン酸等を挙げることができる。
加水分解触媒としての有機塩基は、例えばピリジン、ピロール、ピペラジン、ピロリジン、ピペリジン、ピコリン、トリメチルアミン、トリエチルアミン、モノエタノールアミン、ジエタノールアミン、ジメチルモノエタノールアミン、モノメチルジエタノールアミン、トリエタノールアミン、ジアザビシクロオクタン、ジアザビシクロノナン、ジアザビシクロウンデセン、テトラメチルアンモニウムハイドロオキサイド等を挙げることができる。無機塩基としては、例えばアンモニア、水酸化ナトリウム、水酸化カリウム、水酸化バリウム、水酸化カルシウム等を挙げることができる。これら触媒の内、金属キレート化合物、有機酸、無機酸が好ましく、これらは1種あるいは2種以上を同時に使用しても良い。
特に、アセトン、メチルエチルケトン、メチル-n-プロピルケトン、メチル-n-ブチルケトン、ジエチルケトン、メチル-i-ブチルケトン、メチル-n-ペンチルケトン、エチル-n-ブチルケトン、メチル-n-ヘキシルケトン、ジ-i-ブチルケトン、トリメチルノナノン、シクロヘキサノン、メチルシクロヘキサノン、2,4-ペンタンジオン、アセトニルアセトン、ジアセトンアルコール、アセトフェノン、フェンチョン(1,1,3-トリメチル-2-ノルボルネン)等のケトン系溶媒が溶液の保存安定性の点で好ましい。
上記有機酸としては、例えばシュウ酸、マロン酸、メチルマロン酸、コハク酸、マレイン酸、リンゴ酸、酒石酸、フタル酸、クエン酸、グルタル酸、クエン酸、乳酸、サリチル酸等が挙げられる。中でも、シュウ酸、マレイン酸等が好ましい。加える有機酸は縮合物(ポリオルガノシロキサン)100質量部に対して0.5乃至5.0質量部である。また加える水は純水、超純水、イオン交換水等を用いることができ、その添加量はレジスト下層膜形成組成物100質量部に対して1乃至20質量部とすることができる。
また加えるアルコールとしては塗布後の加熱により飛散しやすいものが好ましく、例えばメタノール、エタノール、プロパノール、イソプロパノール、ブタノール等が挙げられる。加えるアルコールはレジスト下層膜形成組成物100質量部に対して1乃至20質量部とすることができる。
また、添加剤としてビスフェノールS、又はビスフェノールS誘導体を添加することができる。ビスフェノールS、又はビスフェノールS誘導体はポリオルガノシロキサン100質量部に対して、0.01乃至20質量部、または0.01乃至10質量部、または0.01乃至5質量部である。
有機ポリマー化合物を使用することにより、本発明のリソグラフィー用下層膜形成組成物から形成されるレジスト下層膜のドライエッチング速度(単位時間当たりの膜厚の減少量)、減衰係数及び屈折率等を調整することができる。
有機ポリマー化合物としては特に制限はなく、種々の有機ポリマーを使用することができる。縮重合ポリマー及び付加重合ポリマー等を使用することができる。ポリエステル、ポリスチレン、ポリイミド、アクリルポリマー、メタクリルポリマー、ポリビニルエーテル、フェノールノボラック、ナフトールノボラック、ポリエーテル、ポリアミド、ポリカーボネート等の付加重合ポリマー及び縮重合ポリマーを使用することができる。吸光部位として機能するベンゼン環、ナフタレン環、アントラセン環、トリアジン環、キノリン環、及びキノキサリン環等の芳香環構造を有する有機ポリマーが好ましく使用される。
そのような有機ポリマー化合物としては、例えば、ベンジルアクリレート、ベンジルメタクリレート、フェニルアクリレート、ナフチルアクリレート、アントリルメタクリレート、アントリルメチルメタクリレート、スチレン、ヒドロキシスチレン、ベンジルビニルエーテル及びN-フェニルマレイミド等の付加重合性モノマーをその構造単位として含む付加重合ポリマーや、フェノールノボラック及びナフトールノボラック等の縮重合ポリマーが挙げられる。
有機ポリマー化合物として付加重合ポリマーが使用される場合、そのポリマー化合物は単独重合体でもよく共重合体であってもよい。付加重合ポリマーの製造には付加重合性モノマーが使用される。そのような付加重合性モノマーとしてはアクリル酸、メタクリル酸、アクリル酸エステル化合物、メタクリル酸エステル化合物、アクリルアミド化合物、メタクリルアミド化合物、ビニル化合物、スチレン化合物、マレイミド化合物、マレイン酸無水物、アクリロニトリル等が挙げられる。
メタクリル酸エステル化合物としては、メチルメタクリレート、エチルメタクリレート、ノルマルヘキシルメタクリレート、イソプロピルメタクリレート、シクロヘキシルメタクリレート、ベンジルメタクリレート、フェニルメタクリレート、アントリルメチルメタクリレート、2-ヒドロキシエチルメタクリレート、2-ヒドロキシプロピルメタクリレート、2,2,2-トリフルオロエチルメタクリレート、2,2,2-トリクロロエチルメタクリレート、2-ブロモエチルメタクリレート、4-ヒドロキシブチルメタクリレート、2-メトキシエチルメタクリレート、テトラヒドロフルフリルメタクリレート、5-メタクリロイルオキシ-6-ヒドロキシノルボルネン-2-カルボキシリック-6-ラクトン、3-メタクリロキシプロピルトリエトキシシラン、グリシジルメタクリレート、2-フェニルエチルメタクリレート、ヒドロキシフェニルメタクリレート及びブロモフェニルメタクリレート等が挙げられる。
メタクリルアミド化合物、メタクリルアミド、N-メチルメタクリルアミド、N-エチルメタクリルアミド、N-ベンジルメタクリルアミド、N-フェニルメタクリルアミド、N,N-ジメチルメタクリルアミド及びN-アントリルアクリルアミド等が挙げられる。
ビニル化合物としては、ビニルアルコール、2-ヒドロキシエチルビニルエーテル、メチルビニルエーテル、エチルビニルエーテル、ベンジルビニルエーテル、ビニル酢酸、ビニルトリメトキシシラン、2-クロロエチルビニルエーテル、2-メトキシエチルビニルエーテル、ビニルナフタレン及びビニルアントラセン等が挙げられる。
スチレン化合物としては、スチレン、ヒドロキシスチレン、クロロスチレン、ブロモスチレン、メトキシスチレン、シアノスチレン及びアセチルスチレン等が挙げられる。
マレイミド化合物としては、マレイミド、N-メチルマレイミド、N-フェニルマレイミド、N-シクロヘキシルマレイミド、N-ベンジルマレイミド及びN-ヒドロキシエチルマレイミド等が挙げられる。
ポリマーとして縮重合ポリマーが使用される場合、そのようなポリマーとしては、例えば、グリコール化合物とジカルボン酸化合物との縮重合ポリマーが挙げられる。グリコール化合物としてはジエチレングリコール、ヘキサメチレングリコール、ブチレングリコール等が挙げられる。ジカルボン酸化合物としては、コハク酸、アジピン酸、テレフタル酸、無水マレイン酸等が挙げられる。また、例えば、ポリピロメリットイミド、ポリ(p-フェニレンテレフタルアミド)、ポリブチレンテレフタレート、ポリエチレンテレフタレート等のポリエステル、ポリアミド、ポリイミドが挙げられる。
有機ポリマー化合物としては、重量平均分子量が、例えば1000乃至1000000であり、または3000乃至300000であり、または5000乃至200000であり、または10000乃至100000であるポリマー化合物を使用することができる。
有機ポリマー化合物は一種のみを使用することができ、または二種以上を組み合わせて使用することができる。
有機ポリマー化合物が使用される場合、その割合としては、縮合物(ポリオルガノシロキサン)100質量部に対して、1乃至200質量部、または5乃至100質量部、または10乃至50質量部、または20乃至30質量部である。
本発明のレジスト下層膜形成組成物では酸発生剤を含有することができる。
酸発生剤としては、熱酸発生剤や光酸発生剤が挙げられる。
光酸発生剤は、レジストの露光時に酸を生ずる。そのため、下層膜の酸性度の調整ができる。これは、下層膜の酸性度を上層のレジストとの酸性度に合わせるための一方法である。また、下層膜の酸性度の調整によって、上層に形成されるレジストのパターン形状の調整ができる。
本発明のレジスト下層膜形成組成物に含まれる光酸発生剤としては、オニウム塩化合物、スルホンイミド化合物、及びジスルホニルジアゾメタン化合物等が挙げられる。
スルホンイミド化合物としては、例えばN-(トリフルオロメタンスルホニルオキシ)スクシンイミド、N-(ノナフルオロノルマルブタンスルホニルオキシ)スクシンイミド、N-(カンファースルホニルオキシ)スクシンイミド及びN-(トリフルオロメタンスルホニルオキシ)ナフタルイミド等が挙げられる。
ジスルホニルジアゾメタン化合物としては、例えば、ビス(トリフルオロメチルスルホニル)ジアゾメタン、ビス(シクロヘキシルスルホニル)ジアゾメタン、ビス(フェニルスルホニル)ジアゾメタン、ビス(p-トルエンスルホニル)ジアゾメタン、ビス(2,4-ジメチルベンゼンスルホニル)ジアゾメタン、及びメチルスルホニル-p-トルエンスルホニルジアゾメタン等が挙げられる。
光酸発生剤が使用される場合、その割合としては、縮合物(ポリオルガノシロキサン)100質量部に対して、0.01乃至5質量部、または0.1乃至3質量部、または0.5乃至1質量部である。
界面活性剤は、本発明のリソグラフィー用レジスト下層膜形成組成物を基板に塗布した際に、ピンホール及びストレーション等の発生を抑制するのに有効である。
本発明のレジスト下層膜形成組成物に使用される溶剤としては、前記の固形分を溶解できる溶剤であれば、特に制限なく使用することができる。そのような溶剤としては、例えば、メチルセロソルブアセテート、エチルセロソルブアセテート、プロピレングリコール、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、メチルイソブチルカルビノール、プロピレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエテルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート、プロピレングリコールモノブチルエーテルアセテート、トルエン、キシレン、メチルエチルケトン、シクロペンタノン、シクロヘキサノン、2-ヒドロキシプロピオン酸エチル、2-ヒドロキシ-2-メチルプロピオン酸エチル、エトキシ酢酸エチル、ヒドロキシ酢酸エチル、2-ヒドロキシ-3-メチルブタン酸メチル、3-メトキシプロピオン酸メチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸エチル、3-エトキシプロピオン酸メチル、ピルビン酸メチル、ピルビン酸エチル、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノプロピルエーテル、エチレングリコールモノブチルエーテル、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノプロピルエーテルアセテート、エチレングリコールモノブチルエーテルアセテート、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジプロピルエーテル、ジエチレングリコールジブチルエーテルプロピレングリコールモノメチルエーテル、プロピレングリコールジメチルエーテル、プロピレングリコールジエチルエーテル、プロピレングリコールジプロピルエーテル、プロピレングリコールジブチルエーテル、乳酸エチル、乳酸プロピル、乳酸イソプロピル、乳酸ブチル、乳酸イソブチル、ギ酸メチル、ギ酸エチル、ギ酸プロピル、ギ酸イソプロピル、ギ酸ブチル、ギ酸イソブチル、ギ酸アミル、ギ酸イソアミル、酢酸メチル、酢酸エチル、酢酸アミル、酢酸イソアミル、酢酸ヘキシル、プロピオン酸メチル、プロピオン酸エチル、プロピオン酸プロピル、プロピオン酸イソプロピル、プロピオン酸ブチル、プロピオン酸イソブチル、酪酸メチル、酪酸エチル、酪酸プロピル、酪酸イソプロピル、酪酸ブチル、酪酸イソブチル、ヒドロキシ酢酸エチル、2-ヒドロキシ-2-メチルプロピオン酸エチル、3-メトキシ-2-メチルプロピオン酸メチル、2-ヒドロキシ-3-メチル酪酸メチル、メトキシ酢酸エチル、エトキシ酢酸エチル、3-メトキシプロピオン酸メチル、3-エトキシプロピオン酸エチル、3-メトキシプロピオン酸エチル、3-メトキシブチルアセテート、3-メトキシプロピルアセテート、3-メチル-3-メトキシブチルアセテート、3-メチル-3-メトキシブチルプロピオネート、3-メチル-3-メトキシブチルブチレート、アセト酢酸メチル、トルエン、キシレン、メチルエチルケトン、メチルプロピルケトン、メチルブチルケトン、2-ヘプタノン、3-ヘプタノン、4-ヘプタノン、シクロヘキサノン、N、N-ジメチルホルムアミド、N-メチルアセトアミド、N,N-ジメチルアセトアミド、N-メチルピロリドン、4-メチル-2-ペンタノール、及びγ-ブチロラクトン等を挙げることができる。これらの溶剤は単独で、または二種以上の組み合わせで使用することができる。
半導体装置の製造に使用される基板(例えば、シリコンウエハー基板、シリコン/二酸化シリコン被覆基板、シリコンナイトライド基板、ガラス基板、ITO基板、ポリイミド基板、及び低誘電率材料(low-k材料)被覆基板等)の上に、スピナー、コーター等の適当な塗布方法により本発明のレジスト下層膜形成組成物が塗布され、その後、焼成することによりレジスト下層膜が形成される。焼成する条件としては、焼成温度80℃乃至250℃、焼成時間0.3乃至60分間の中から適宜、選択される。好ましくは、焼成温度150℃乃至250℃、焼成時間0.5乃至2分間である。ここで、形成される下層膜の膜厚としては、例えば、10乃至1000nmであり、または20乃至500nmであり、または50乃至300nmであり、または100乃至200nmである。
次いでそのレジスト下層膜の上に、例えばフォトレジストの層が形成される。フォトレジストの層の形成は、周知の方法、すなわち、フォトレジスト組成物溶液の下層膜上への塗布及び焼成によって行なうことができる。フォトレジストの膜厚としては例えば50乃至10000nmであり、または100乃至2000nmであり、または200乃至1000nmである。
本発明のレジスト下層膜の上に形成されるフォトレジストとしては露光に使用される光に感光するものであれば特に限定はない。ネガ型フォトレジスト及びポジ型フォトレジストのいずれも使用できる。ノボラック樹脂と1,2-ナフトキノンジアジドスルホン酸エステルとからなるポジ型フォトレジスト、酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと光酸発生剤からなる化学増幅型フォトレジスト、酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物とアルカリ可溶性バインダーと光酸発生剤とからなる化学増幅型フォトレジスト、及び酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物と光酸発生剤からなる化学増幅型フォトレジストなどがある。例えば、シプレー社製商品名APEX-E、住友化学工業(株)製商品名PAR710、及び信越化学工業(株)製商品名SEPR430等が挙げられる。また、例えば、Proc.SPIE,Vol.3999,330-334(2000)、Proc.SPIE,Vol.3999,357-364(2000)、やProc.SPIE,Vol.3999,365-374(2000)に記載されているような、含フッ素原子ポリマー系フォトレジストを挙げることができる。
また、本発明ではレジストとしてフォトレジストに変えて電子線リソグラフィー用レジスト、又はEUVリソグラフィー用レジストを用いることができる。電子線レジストとしてはネガ型、ポジ型いずれも使用できる。酸発生剤と酸により分解してアルカリ溶解速度を変化させる基を有するバインダーからなる化学増幅型レジスト、アルカリ可溶性バインダーと酸発生剤と酸により分解してレジストのアルカリ溶解速度を変化させる低分子化合物からなる化学増幅型レジスト、酸発生剤と酸により分解してアルカリ溶解速度を変化させる基を有するバインダーと酸により分解してレジストのアルカリ溶解速度を変化させる低分子化合物からなる化学増幅型レジスト、電子線によって分解してアルカリ溶解速度を変化させる基を有するバインダーからなる非化学増幅型レジスト、電子線によって切断されアルカリ溶解速度を変化させる部位を有するバインダーからなる非化学増幅型レジストなどがある。これらの電子線レジストを用いた場合も照射源を電子線としてフォトレジストを用いた場合と同様にレジストパターンを形成することができる。
また、EUVレジストとしてはメタクリレート樹脂系レジストを用いることができる。
現像液としては、水酸化カリウム、水酸化ナトリウムなどのアルカリ金属水酸化物の水溶液、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、コリンなどの水酸化四級アンモニウムの水溶液、エタノールアミン、プロピルアミン、エチレンジアミンなどのアミン水溶液等のアルカリ性水溶液を例として挙げることができる。さらに、これらの現像液に界面活性剤などを加えることもできる。現像の条件としては、温度5乃至50℃、時間10乃至600秒から適宜選択される。
また、本発明では現像液として有機溶剤を用いることができる。露光後に現像液(溶剤)によって現像が行なわれる。これにより、例えばポジ型フォトレジストが使用された場合は、露光されない部分のフォトレジストが除去され、フォトレジストのパターンが形成される。
まず、フォトレジストが除去された部分の本発明のレジスト下層膜(中間層)をドライエッチングによって取り除き、半導体基板を露出させる。本発明のレジスト下層膜のドライエッチングにはテトラフルオロメタン(CF4)、パーフルオロシクロブタン(C4F8)、パーフルオロプロパン(C3F8)、トリフルオロメタン、一酸化炭素、アルゴン、酸素、窒素、六フッ化硫黄、ジフルオロメタン、三フッ化窒素及び三フッ化塩素、塩素、トリクロロボラン及びジクロロボラン等のガスを使用することができる。レジスト下層膜のドライエッチングにはハロゲン系ガスを使用することが好ましい。ハロゲン系ガスによるドライエッチングでは、基本的に有機物質からなるフォトレジストは除去されにくい。それに対し、シリコン原子を多く含む本発明のレジスト下層膜はハロゲン系ガスによって速やかに除去される。そのため、レジスト下層膜のドライエッチングに伴うフォトレジストの膜厚の減少を抑えることができる。そして、その結果、フォトレジストを薄膜で使用することが可能となる。レジスト下層膜のドライエッチングはフッ素系ガスによることが好ましく、フッ素系ガスとしては、例えば、テトラフルオロメタン(CF4)、パーフルオロシクロブタン(C4F8)、パーフルオロプロパン(C3F8)、トリフルオロメタン、及びジフルオロメタン(CH2F2)等が挙げられる。
最後に、半導体基板の加工が行なわれる。半導体基板の加工はフッ素系ガスによるドライエッチングによって行なわれることが好ましい。
フッ素系ガスとしては、例えば、テトラフルオロメタン(CF4)、パーフルオロシクロブタン(C4F8)、パーフルオロプロパン(C3F8)、トリフルオロメタン、及びジフルオロメタン(CH2F2)等が挙げられる。
また、本発明のレジスト下層膜の上層には、フォトレジストの形成前に有機系の反射防止膜を形成することができる。そこで使用される反射防止膜組成物としては特に制限はなく、これまでリソグラフィープロセスにおいて慣用されているものの中から任意に選択して使用することができ、また、慣用されている方法、例えば、スピナー、コーターによる塗布及び焼成によって反射防止膜の形成を行なうことができる。
また、本発明のレジスト下層膜形成組成物が塗布される基板は、その表面にCVD法などで形成された有機系または無機系の反射防止膜を有するものであってもよく、その上に本発明の下層膜を形成することもできる。
また、レジスト下層膜形成組成物より形成されるレジスト下層膜は、デュアルダマシンプロセスで用いられるビアホールが形成された基板に適用され、ホールを隙間なく充填することができる埋め込み材として使用できる。また、凹凸のある半導体基板の表面を平坦化するための平坦化材として使用することもできる。
100mlナスフラスコに、N-メチルアミノプロピルトリエトキシシラン10.00g(0.05mol)、トリエチルアミン6.54g(0.06mol)、N,N-ジメチルホルムアミド33.1gを入れ、マグネチックスターラーにて攪拌しながら2-クロロエチルフェニルスルホン10.59g(0.05mol)、N,N-ジメチルホルムアミド21.2gの混合溶媒を滴下し、滴下終了後70℃に過熱し4時間反応させた。反応により生成したトリエチルアミン塩酸塩をろ過により除去し、ろ液をエバポレーターにて溶媒を除去後、酢酸エチル、水にて分液を行った。有機層を硫酸マグネシウムにて脱水処理後、ろ過を行い、エバポレーターにて酢酸エチルを除去し粗生成物を得た。粗生成物を減圧蒸留することで、目的物である化合物1(式(1-1)、Xがエトキシ基)を得た。
1H-NMR(500MHz):0.47ppm(t、2H)、1.30ppm(quint、2H)、2.02ppm(s、3H)、2.20ppm(t、2H)、2.61ppm(t、2H)、3.43~3.49(m、11H)、7.64~7.93ppm(m、5H)
100mlナスフラスコに、N-メチルアリルアミン5.00g(0.067mol)、4-フルオロフェニルメチルスルホン9.80g(0.056mol)、炭酸カリウム7.77g(0.056mol)、N-メチルピロリドン10.0gを入れ、60℃に加熱し8日間反応させた。反応液を、酢酸エチル、水にて分液を行った後、エバポレーターにて酢酸エチルを除去し中間体1の粗生成物を得た。
50mlナスフラスコに、中間体1を1.50g(0.006mol)、トリエトキシシラン1.18g(0.007mol)、白金触媒PI-Pt 0.08g、トルエン15gを入れ、加熱還流を行い6時間反応させた。白金触媒PI-Ptをろ過により除去し、エバポレーターにてトルエンを除去し粗生成物を得た。粗生成物を減圧蒸留することで、目的物である化合物2(式(1-2)、Xがエトキシ基)を得た。
1H-NMR(500MHz):0.58ppm(t、2H)、1.14ppm(t、9H)、1.58ppm(quint、2H)、2.98ppm(s、3H)、3.06ppm(s、3H)、3.40(t、2H)、3.75ppm(q、6H)、6.78~6.80ppm(m、2H)、7.61~7.63ppm(m、2H)
15.42g(70mol%)のテトラエトキシシラン、4.71g(25mol%)のメチルトリエトキシシラン、1.05g(5mol%)のフェニルトリメトキシシラン、31.77gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.01mol/lの塩酸7.05gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノメチルエーテルアセテート21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノメチルエーテルアセテート溶液を得た。プロピレングリコールモノエチルエーテルを加え、プロピレングリコールモノメチルエーテルアセテート/プロピレングリコールモノエチルエーテル20/80の溶媒比率として140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(E-1)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1600であった。
14.72g(70mol%)のテトラエトキシシラン、4.50g(25mol%)のメチルトリエトキシシラン、2.09g(5mol%)の3-(トリエトキシシリルプロピル)ジアリルイソシアヌレート、31.96gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.01mol/lの塩酸6.73gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノメチルエーテルアセテート21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノメチルエーテルアセテート溶液を得た。プロピレングリコールモノエチルエーテルを加え、プロピレングリコールモノメチルエーテルアセテート/プロピレングリコールモノエチルエーテル20/80の溶媒比率として140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(E-2)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1700であった。
15.36g(70mol%)のテトラエトキシシラン、4.60g(24.5mol%)のメチルトリエトキシシラン、1.04g(5mol%)のフェニルトリメトキシシラン、0.19g(0.5mol%)の化合物1、31.79gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.02mol/lの塩酸7.02gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノエチルエーテル21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノエチルエーテル溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(A-1)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1700であった。
14.66g(70mol%)のテトラエトキシシラン、4.39g(24.5mol%)のメチルトリエトキシシラン、2.08g(5mol%)の3-(トリエトキシシリルプロピル)ジアリルイソシアヌレート、0.18g(0.5mol%)の化合物1、31.79gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.02mol/lの塩酸6.70gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノエチルエーテル21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノエチルエーテル溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(A-2)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1800であった。
15.20g(70mol%)のテトラエトキシシラン、3.72g(20mol%)のメチルトリエトキシシラン、1.03g(5mol%)のフェニルトリメトキシシラン、1.26g(5mol%)の(4-メトキシベンジル)トリメトキシシラン、31.83gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.01mol/lの塩酸6.95gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノメチルエーテルアセテート21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノメチルエーテルアセテート溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(E-3)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1600であった。
14.53g(70mol%)のテトラエトキシシラン、3.55g(20mol%)のメチルトリエトキシシラン、2.06g(5mol%)の3-(トリエトキシシリルプロピル)ジアリルイソシアヌレート、1.21g(5mol%)の(4-メトキシベンジル)トリメトキシシラン、32.02gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.01mol/lの塩酸6.64gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノメチルエーテルアセテート21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノメチルエーテルアセテート溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(E-4)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1600であった。
15.14g(70mol%)のテトラエトキシシラン、3.61g(19.5mol%)のメチルトリエトキシシラン、1.03g(5mol%)のフェニルトリメトキシシラン、1.26g(5mol%)の(4-メトキシベンジル)トリメトキシシラン、0.19g(0.5mol%)の化合物1、31、85gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.02mol/lの塩酸6.92gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノエチルエーテル21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノエチルエーテル溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(A-3)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1700であった。
14.47g(70mol%)のテトラエトキシシラン、3.45g(19.5mol%)のメチルトリエトキシシラン、2.05g(5mol%)の3-(トリエトキシシリルプロピル)ジアリルイソシアヌレート、1.20g(5mol%)の(4-メトキシベンジル)トリメトキシシラン、0.18g(0.5mol%)の化合物1、32.03gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.02mol/lの塩酸6.62gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノエチルエーテル21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノエチルエーテル溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(A-4)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1800であった。
15.40g(70mol%)のテトラエトキシシラン、4.61g(24.5mol%)のメチルトリエトキシシラン、1.05g(5mol%)のフェニルトリメトキシシラン、0.12g(0.5mol%)のN-(3-トリエトキシシリプロピル)-4,5-ジヒドロイミダゾール、31.78gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.02mol/lの塩酸7.04gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノエチルエーテル21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノエチルエーテル溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(E-5)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1700であった。
15.39g(70mol%)のテトラエトキシシラン、4.70g(25mol%)のメチルトリエトキシシラン、0.94g(4.5mol%)のフェニルトリメトキシシラン、0.15g(0.5mol%)の4-メチルスルホニルメチルフェニルトリメトキシシラン、31.78gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.02mol/lの塩酸7.04gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノエチルエーテル21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノエチルエーテル溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(E-6)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1600であった。
15.37g(70mol%)のテトラエトキシシラン、4.70g(25mol%)のメチルトリエトキシシラン、0.94g(4.5mol%)のフェニルトリメトキシシラン、0.19g(0.5mol%)の3-(N-トリエトキシシリル)プロピルベンゼンスルホンアミド、31.79gのアセトンを100mlのフラスコに入れ、混合溶液をマグネチックスターラーにて撹拌しながら0.02mol/lの塩酸7.02gを混合溶液に滴下した。添加後、85℃に調整されたオイルバスにフラスコを移し、加温還流下で240分反応させた。その後、反応溶液を室温まで冷却し、反応溶液にプロピレングリコールモノエチルエーテル21gを加え、反応副生物であるエタノール、水、塩酸を減圧留去し、濃縮して加水分解縮合物(ポリマー)プロピレングリコールモノエチルエーテル溶液を得た。プロピレングリコールモノエチルエーテルを加え、140℃における固形残物換算で15重量パーセントとなるように調整した。生成物は式(E-7)のポリマーが主成分であり、加水分解物とモノマーが存在していた。ポリマーのGPCによる重量平均分子量はポリスチレン換算でMw1700であった。
上記合成例1乃至合成例8で得られたケイ素含有ポリマー、酸、硬化触媒、添加剤、溶媒、水を表1に示す割合で混合し、0.1μmのフッ素樹脂製のフィルターで濾過することによって、レジスト下層膜形成用組成物の溶液をそれぞれ調製した。
表1中でマレイン酸はMA、N-(3-トリエトキシシリプロピル)-4,5-ジヒドロイミダゾールはIMIDTEOS、ビスフェノールSはBPS、プロピレングリコールモノメチルエーテルアセテートはPGMEA、プロピレングリコールモノエチルエーテルはPGEEと略した。水は超純水を用いた。各添加量は質量部で示した。ポリマーの添加量はポリマー溶液の質量ではなく、ポリマーの質量である。
実施例1乃至実施例14及び比較例1乃至比較例7のレジスト下層膜形成組成物を、スピンコート法にてシリコンウェハー上にそれぞれ塗布し、240℃のホットプレート上で1分間焼成させ、レジスト下層膜を形成した。その後、上塗りレジスト組成物の溶剤に用いられるプロピレングリコールモノメチルエーテルアセテート(PGMEA)に1分間浸漬し、浸漬の前後でのレジスト下層膜の膜厚の変化が1nm以下である場合は「良好(○)」と判断し、膜厚変化がそれ以上である場合は「不良(×)」と判断した。得られた結果を表2に示す。
実施例1乃至14、比較例1乃至7で調製したSi含有レジスト下層膜形成組成物をスピナーを用い、シリコンウェハー上にそれぞれ塗布した。ホットプレート上で200℃1分間加熱し、Si含有レジスト下層膜(膜厚0.05μm)を形成した。そして、これらのレジスト下層膜を分光エリプソメーター(J.A. Woollam社製、VUV-VASE VU-302)を用い、波長193nmでの屈折率(n値)及び光学吸光係数(k値、減衰係数とも呼ぶ)を測定した。
ドライエッチング速度の測定に用いたエッチャー及びエッチングガスは以下のものを用いた。
ES401(日本サイエンティフィック製):CF4
RIE-10NR(サムコ製):O2
実施例1乃至14、比較例1乃至7で調製したSi含有レジスト下層膜形成組成物の溶液をスピナーを用い、シリコンウェハー上に塗布した。ホットプレート上で240℃1分間加熱し、Si含有レジスト下層膜(膜厚0.08μm(CF4ガスでのエッチング速度測定用)、0.05μm(O2ガスでのエッチング速度測定用)をそれぞれ形成した。また、同様に下記記載の有機下層膜形成組成物をスピナーを用い、シリコンウェハー上に塗膜を形成した。エッチングガスとしてO2ガスを使用してドライエッチング速度を測定し、実施例1乃至実施例14、比較例1乃至比較例7のSi含有レジスト下層膜のドライエッチング速度との比較を行った。
プロピレングリコールモノメチルエーテルアセテート(PGMEA)に対する溶剤耐性、193nmの波長での屈折率n、193nmの波長での光学吸収係数k、フッ素系ガス(CF4ガス)でのエッチレート(エッチング速度:nm/分)、酸素系ガス(O2ガス)耐性は、(本願レジスト下層膜)/(有機下層膜)のエッチレート比で示した。
窒素下、100mL四口フラスコにカルバゾール(6.69g、0.040mol、東京化成工業(株)製)、9-フルオレノン(7.28g、0.040mol、東京化成工業(株)製)、パラトルエンスルホン酸一水和物(0.76g、0.0040mol、東京化成工業(株)製)を加え、1,4-ジオキサン(6.69g、関東化学(株)製)を仕込み撹拌し、100℃まで昇温し溶解させ重合を開始した。24時間後60℃まで放冷後、クロロホルム(34g、関東化学(株)製)を加え希釈し、メタノール(168g、関東化学(株)製)へ再沈殿させた。得られた沈殿物をろ過し、減圧乾燥機で80℃、24時間乾燥し、目的とするポリマー(式(F-1)、以下PCzFLと略す)9.37gを得た。
1H-NMR(400MHz,DMSO-d6):δ7.03-7.55(br,12H),δ7.61-8.10(br,4H),δ11.18(br,1H)
PCzFLのGPCによるポリスチレン換算で測定される重量平均分子量Mwは2800、多分散度Mw/Mnは1.77であった。
得られた樹脂20gに、架橋剤としてテトラメトキシメチルグリコールウリル(三井サイテック(株)製、商品名パウダーリンク1174)3.0g、触媒としてピリジニウムパラトルエンスルホネート0.30g、界面活性剤としてメガファックR-30(大日本インキ化学(株)製、商品名)0.06gを混合し、プロピレングリコールモノメチルエーテルアセテート88gに溶解させ溶液とした。その後、孔径0.10μmのポリエチレン製ミクロフィルターを用いて濾過し、更に、孔径0.05μmのポリエチレン製ミクロフィルターを用いて濾過して、多層膜によるリソグラフィープロセスに用いる有機レジスト下層膜形成組成物の溶液を調製した。
上記式で得られた有機下層膜(A層)形成組成物をシリコンウエハー上に塗布し、ホットプレート上で240℃で60秒間ベークし、膜厚200nmの有機下層膜(A層)を得た。その上に、実施例1乃至実施例10、比較例1乃至比較例7で得られたSi含有レジスト下層膜(B層)形成組成物を塗布し、ホットプレート上で240℃で45秒間ベークし、Si含有レジスト下層膜(B層)を得た。Si含有レジスト下層膜(B層)の膜厚は45nmであった。
B層の上に市販のフォトレジスト溶液(JSR(株)製、商品名AR2772)をスピナーによりそれぞれ塗布し、ホットプレート上で110℃にて60秒間ベークし、膜厚120nmのフォトレジスト膜(C層)を形成した。レジストのパターニングはNIKON社製ArF露光機S-307E(波長193nm、NA、σ:0.85、0.93/0.85(Dipole)液浸液:水)を用いて行った。ターゲットは現像後にフォトレジストのライン幅およびそのライン間の幅が0.065μmである、いわゆるラインアンドスペース(デンスライン)が形成されるように設定されたマスクを通して露光を行った。
その後、ホットプレート上110℃で60秒間ベークし、冷却後、60秒シングルパドル式工程にて2.38質量%濃度のテトラメチルアンモニウムヒドロキシド水溶液(現像液)で現像した。得られたフォトレジストパターンについて、大きなパターン剥がれやアンダーカット、ライン底部の太り(フッティング)が発生しないものを良好として評価した。
B層の上に市販のフォトレジスト溶液(富士フイルム(株)製、商品名FAiRS-9521NT05)をスピナーによりそれぞれ塗布し、ホットプレート上で100℃にて1分間加熱し、膜厚85nmのフォトレジスト膜(C層)を形成した。
続いて、(株)ニコン製NSR-S307Eスキャナー(波長193nm、NA、σ:0.85、0.93/0.85)を用い、現像後にフォトレジストのライン幅及びそのライン間の幅が0.065μm、すなわち0.065μmのラインアンドスペース(L/S)=1/1のデンスラインが形成されるように設定されたマスク、また現像後にフォトレジストのライン幅及びそのライン間の幅が0.060μm、すなわち0.060μmのラインアンドスペース(L/S)=1/1のデンスラインが形成されるように設定されたマスクにそれぞれを通して露光を行った。その後、ホットプレート上100℃で60秒間ベークし、冷却後、酢酸ブチル(溶剤現像液)を用いて60秒現像し、レジスト下層膜(B層)上にネガ型のパターンを形成した。
得られたフォトレジストパターンについて、大きなパターン剥がれやアンダーカット、ライン底部の太り(フッティング)が発生しないものを良好として評価した。
Claims (10)
- 下記式(1-a)又は式(1-b)で表されるシラン化合物。
式(1-b)中、R6、R7、R9、及びR10のうち少なくとも1つの基は、炭素原子数1乃至10のアルキレン基の末端に-Si(X)3基が結合した基を表し、残りの基は水素原子、炭素原子数1乃至10のアルキル基、又は炭素原子数6乃至40のアリール基を表し、R5及びR8は炭素原子数1乃至10のアルキレン基、又は炭素原子数6乃至40のアリーレン基を表す。但し上記Xはアルコキシ基、アシルオキシ基、又はハロゲン原子を表す。) - シランとして加水分解性オルガノシラン、その加水分解物及びその加水分解縮合物のうちの少なくとも1種を含み、該シランが請求項1に記載の式(1-a)又は式(1-b)で表されるシラン化合物を含むリソグラフィー用レジスト下層膜形成組成物。
- 前記シランが式(3):
- 上記式(1-a)又は式(1-b)で表されるシラン化合物の加水分解縮合物、及び式(1-a)又は式(1-b)で表されるシラン化合物と式(3)で表される有機ケイ素化合物との加水分解縮合物のうちの少なくとも1種をポリマーとして含む請求項2乃至請求項4のいずれか1項に記載の組成物。
- 更に酸を含む請求項2乃至請求項5のいずれか1項に記載の組成物。
- 更に水を含む請求項2乃至請求項6のいずれか1項に記載の組成物。
- 請求項2乃至請求項7のいずれか1項に記載のレジスト下層膜形成組成物を半導体基板上に塗布し焼成することによって得られるレジスト下層膜。
- 請求項2乃至請求項7のいずれか1項に記載のレジスト下層膜形成組成物を半導体基板上に塗布し、焼成してレジスト下層膜を形成する工程、前記レジスト下層膜の上にレジスト用組成物を塗布しレジスト膜を形成する工程、前記レジスト膜を露光する工程、露光後にレジスト膜を現像してパターン化されたレジスト膜を得る工程、該パターン化されたレジスト膜のパターンに従いレジスト下層膜をエッチングする工程、並びにレジスト膜及びレジスト下層膜のパターンに従い半導体基板を加工する工程を含む半導体装置の製造方法。
- 半導体基板上に有機下層膜を形成する工程、その上に請求項2乃至請求項7のいずれか1項に記載のレジスト下層膜形成組成物を塗布し、焼成してレジスト下層膜を形成する工程、前記レジスト下層膜の上にレジスト用組成物を塗布しレジスト膜を形成する工程、前記レジスト膜を露光する工程、露光後に前記レジスト膜を現像してパターン化されたレジスト膜を得る工程、該パターン化されたレジスト膜のパターンに従いレジスト下層膜をエッチングする工程、該パターン化されたレジスト下層膜のパターンに従い有機下層膜をエッチングする工程、及び該パターン化された有機下層膜のパターンに従い半導体基板を加工する工程を含む半導体装置の製造方法。
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KR20170018816A (ko) | 2014-06-17 | 2017-02-20 | 닛산 가가쿠 고교 가부시키 가이샤 | 페닐기 함유 크로모퍼를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
KR20170033265A (ko) | 2014-07-15 | 2017-03-24 | 닛산 가가쿠 고교 가부시키 가이샤 | 할로겐화설포닐알킬기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물 |
KR20170093113A (ko) | 2014-12-08 | 2017-08-14 | 닛산 가가쿠 고교 가부시키 가이샤 | 할로겐함유 카르본산아미드기를 가지는 가수분해성 실란을 포함하는 리소그래피용 레지스트 하층막 형성 조성물 |
JP2022503618A (ja) * | 2018-10-19 | 2022-01-12 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | ポリシロキサン組成物 |
WO2022039246A1 (ja) * | 2020-08-21 | 2022-02-24 | 日産化学株式会社 | Euvレジスト下層膜形成組成物 |
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US11506980B2 (en) * | 2017-04-25 | 2022-11-22 | Nissan Chemical Corporation | Resist underlayer film forming composition using a fluorene compound |
CN110128365B (zh) * | 2019-05-10 | 2023-07-07 | 福建泓光半导体材料有限公司 | 一种抗蚀剂下层膜单体和组合物及图案形成方法 |
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KR20170018816A (ko) | 2014-06-17 | 2017-02-20 | 닛산 가가쿠 고교 가부시키 가이샤 | 페닐기 함유 크로모퍼를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
US10197917B2 (en) | 2014-06-17 | 2019-02-05 | Nissan Chemical Industries, Ltd. | Silicon-containing resists underlayer film-forming composition having phenyl group-containing chromophore |
US11175583B2 (en) | 2014-06-17 | 2021-11-16 | Nissan Chemical Industries, Ltd. | Silicon-containing resist underlayer film-forming composition having phenyl group-containing chromophore |
KR20170033265A (ko) | 2014-07-15 | 2017-03-24 | 닛산 가가쿠 고교 가부시키 가이샤 | 할로겐화설포닐알킬기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물 |
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Also Published As
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JPWO2013191203A1 (ja) | 2016-05-26 |
TWI583724B (zh) | 2017-05-21 |
TW201418332A (zh) | 2014-05-16 |
US20150159045A1 (en) | 2015-06-11 |
KR20150021542A (ko) | 2015-03-02 |
CN104395328A (zh) | 2015-03-04 |
JP6195078B2 (ja) | 2017-09-13 |
CN104395328B (zh) | 2017-06-16 |
US9494862B2 (en) | 2016-11-15 |
KR102134673B1 (ko) | 2020-08-26 |
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