US20010028518A1 - SiO2-coated mirror substrate for EUV - Google Patents

SiO2-coated mirror substrate for EUV Download PDF

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US20010028518A1
US20010028518A1 US09/756,018 US75601801A US2001028518A1 US 20010028518 A1 US20010028518 A1 US 20010028518A1 US 75601801 A US75601801 A US 75601801A US 2001028518 A1 US2001028518 A1 US 2001028518A1
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mirror
substrate
cover layer
amorphous
euv
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US6453005B2 (en
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Winfried Kaiser
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Carl Zeiss SMT GmbH
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Carl Zeiss AG
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/062—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements the element being a crystal
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Definitions

  • This invention relates to a mirror substrate, a mirror with such a mirror substrate, and a production process therefor, and also an EUV projection exposure device therewith.
  • Monocrystalline silicon is a preferred substrate material for robust mirrors with a high thermal loading and best shape stability.
  • EUV mirrors are preferred applications in EUV lithography, for the mirrors of illumination, mask and projection objective. Their quality of polishing is then decisive for the usability of the whole system. This follows, e.g., from K. Hoh, Bull. Electrotechn. Lab. 49, No. 12, October 1985, pp. 47-54; T. E. Jewell et al., Proc. SPIE, Vol. 1527 (1991); and David M. Williamson, OSA IODC Conference Paper LWA 2-1, pp. 181-184, Jun. 10, 1998.
  • An X-ray mirror is known from Japanese Patent Document JP-B2-96/032 592, in which a matrix with sintered SiC is coated with crystalline SiC, by which means a precisely smooth surface is obtained.
  • the invention has as its object the provision of a mirror substrate which combines the positive properties of the silicon single crystal substrate with outstanding “superpolish” properties.
  • a mirror substrate of crystal wherein an amorphous cover layer is applied to the substrate, and the amorphous cover layer is covered with a multilayer reflecting layer.
  • a thin, amorphous layer e.g. of quartz glass, amorphous SiO 2 , or Al 2 O 3 , is applied to a substrate member comprising a crystal with low thermal expansion and high thermal conductivity (diamond, BN, SiC, silicon, as examples).
  • a cover layer which is known to be well suited for “super-polish” is thereby prepared, without impairing the other properties of the substrate.
  • the invention also includes the following features:
  • the substrate comprises at least one of the following materials: diamond, BN, SiC, or silicon.
  • the cover layer comprises at least one of the following amorphous materials: quartz glass, SiO 2 or Al 2 O 3 .
  • the amorphous cover layer has a thickness in the range of 1 ⁇ m through 100 ⁇ m.
  • the micro-roughness of the amorphous cover layer is in the angstrom range.
  • the multilayer reflection layers are constituted for a wavelength region of 10 nm to 20 nm, preferably 13 nm.
  • the mirror has a curved surface.
  • a substrate of crystal is shaped close to the final contour, an amorphous cover layer is deposited on the mirror side of the substrate, an optical final polishing takes place and a multilayer reflecting layer is applied.
  • the amorphous cover layer is deposited by means of CVD.
  • Application of mirrors according to the invention in EUV projection exposure devices comprises an EUV projection exposure device with an EUV source, an illuminating optics, a mask, a projection objective, and a wafer, wherein at least one mirror according to the invention is contained in the illuminating optics or in the projection objective.
  • FIG. 1 shows schematically an EUV projection exposure device according to the invention.
  • EUV projection exposure device includes a EUV source 1 , e.g., a synchrotron or a laser plasma focus source, which produces a EUV beam 2 with, e.g., 13 nm wavelength, or another wavelength in the preferred range of about 10-20 nm, for which suitable multilayer reflecting layers (see the reflecting layer 533 , below) are available.
  • EUV source 1 e.g., a synchrotron or a laser plasma focus source
  • a EUV beam 2 with, e.g., 13 nm wavelength, or another wavelength in the preferred range of about 10-20 nm, for which suitable multilayer reflecting layers (see the reflecting layer 533 , below) are available.
  • An illuminating optics 3 serves for the suitable shaping of the EUV light as regards light conducting value, pupil filling, homogeneity, telecentricity, and the like.
  • the mask 4 is thereby illuminated, shown as a transmission mask, but in many cases, however, preferably as a reflection mask.
  • This mask 4 is imaged on a reduced scale by a projection objective 5 onto the object 6 , the wafer.
  • the projection objective 5 contains, as in many known designs, four curved mirrors 51 , 52 , 53 , 54 .
  • the structure according to the invention is representatively shown on mirror 53 of these, with the silicon single crystal substrate 531 , a thin cover layer 532 of amorphous quartz, which with “super-polish” defines the highly accurate final contour of the mirror 53 , and the multilayer reflecting layer 533 .
  • the latter provides, as a distributed Bragg reflector, a relatively high reflectivity of about 40-60% for a given spectral region.
  • the shape of the substrate 531 is determined by the requirements of mechanical stability, cooling, installation into a mount, matching to the beam path (vignetting), and the like.
  • the usable surface is first precisely optically polished to near the final contour.
  • the thin amorphous quartz layer is then deposited.
  • the CVD process for example, is suitable for this. Deformations of the mirror surfaces due to strains in the layer 532 can be kept to a minimum by the process parameters and after-treatments. They can be kept to a minimum by deflection during the shaping of the substrate 531 and by corresponding polishing of the quartz layer 532 .
  • the amorphous quartz layer 532 thus does not serve as an adhesive base, diffusion barrier, or similar auxiliary layer of the multilayer reflection layers 533 , but rather as the material which supports the contour of the mirror 53 .
  • a reflection layer 533 constructed as a multilayer EUV reflection layer, is then arranged on this layer 532 in a known manner.
  • Mirrors constructed in this manner can of course be used at any other place of the projection exposure device and also in other devices, e.g., X-ray microscopes or telescopes.
  • Each material of the substrate member, which is used for the “bulk”, such as the above mentioned materials of low thermal expansion and at the same time high thermal conductivity, can be provided with a thin cover layer of material which can well be polished to optical quality. Conformity as regards adhesion properties, strains, corrosion, and the like can be attained with known criteria.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Mirror substrate of crystal, especially silicon crystal, on which an amorphous layer, especially a quartz glass layer, is applied.

Description

    CROSS-REFERENCES TO RELATED APPLICATIONS
  • This is a continuation of PCT/EP99/04209, which is pending.[0001]
    • STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
  • Not applicable. [0002]
    • REFERENCE TO A MICROFICHE APPENDIX
  • Not applicable. [0003]
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0004]
  • This invention relates to a mirror substrate, a mirror with such a mirror substrate, and a production process therefor, and also an EUV projection exposure device therewith. [0005]
  • Monocrystalline silicon is a preferred substrate material for robust mirrors with a high thermal loading and best shape stability. [0006]
  • For applications in the X-ray region, in particular for soft X-radiation, also termed “extreme ultraviolet” (EUV), extremely smooth surfaces with micro-roughness values in the angstrom range are required. This is attained with so-called “super-polish”. [0007]
  • It has been found by experience that silicon substrates can be homogeneously polished to this standard only poorly or not at all homogeneously over sufficiently large surfaces, particularly in the case of strongly curved surfaces. [0008]
  • 2. Discussion of Relevant Art [0009]
  • The preferred application of such EUV mirrors is in EUV lithography, for the mirrors of illumination, mask and projection objective. Their quality of polishing is then decisive for the usability of the whole system. This follows, e.g., from K. Hoh, Bull. Electrotechn. Lab. 49, No. 12, October 1985, pp. 47-54; T. E. Jewell et al., Proc. SPIE, Vol. 1527 (1991); and David M. Williamson, OSA IODC Conference Paper LWA 2-1, pp. 181-184, Jun. 10, 1998. [0010]
  • An X-ray mirror is known from Japanese Patent Document JP-B2-96/032 592, in which a matrix with sintered SiC is coated with crystalline SiC, by which means a precisely smooth surface is obtained. [0011]
    • SUMMARY OF THE INVENTION
  • The invention has as its object the provision of a mirror substrate which combines the positive properties of the silicon single crystal substrate with outstanding “superpolish” properties. [0012]
  • This object is attained by a mirror substrate of crystal, wherein an amorphous cover layer is applied to the substrate, and the amorphous cover layer is covered with a multilayer reflecting layer. According to one feature of the invention, a thin, amorphous layer, e.g. of quartz glass, amorphous SiO[0013] 2, or Al2O3, is applied to a substrate member comprising a crystal with low thermal expansion and high thermal conductivity (diamond, BN, SiC, silicon, as examples). A cover layer which is known to be well suited for “super-polish” is thereby prepared, without impairing the other properties of the substrate.
  • The invention also includes the following features: [0014]
  • The substrate comprises at least one of the following materials: diamond, BN, SiC, or silicon. [0015]
  • The cover layer comprises at least one of the following amorphous materials: quartz glass, SiO[0016] 2 or Al2O3.
  • The amorphous cover layer has a thickness in the range of 1 μm through 100 μm. [0017]
  • The micro-roughness of the amorphous cover layer is in the angstrom range. [0018]
  • The multilayer reflection layers are constituted for a wavelength region of 10 nm to 20 nm, preferably 13 nm. [0019]
  • The mirror has a curved surface. [0020]
  • In a production process for such a mirror, a substrate of crystal is shaped close to the final contour, an amorphous cover layer is deposited on the mirror side of the substrate, an optical final polishing takes place and a multilayer reflecting layer is applied. [0021]
  • The amorphous cover layer is deposited by means of CVD. [0022]
  • Application of mirrors according to the invention in EUV projection exposure devices comprises an EUV projection exposure device with an EUV source, an illuminating optics, a mask, a projection objective, and a wafer, wherein at least one mirror according to the invention is contained in the illuminating optics or in the projection objective.[0023]
    • BRIEF DESCRIPTION OF THE DRAWING
  • The invention will be described in more detail with reference to the drawing: [0024]
  • FIG. 1 shows schematically an EUV projection exposure device according to the invention.[0025]
    • DETAILED DESCRIPTION OF EMBODIMENT
  • The structure of such a EUV projection exposure device is known per se in numerous variants, e.g. from the above-cited reference Jewell and Williamson and the references cited therein. It includes a EUV source [0026] 1, e.g., a synchrotron or a laser plasma focus source, which produces a EUV beam 2 with, e.g., 13 nm wavelength, or another wavelength in the preferred range of about 10-20 nm, for which suitable multilayer reflecting layers (see the reflecting layer 533, below) are available.
  • An [0027] illuminating optics 3 serves for the suitable shaping of the EUV light as regards light conducting value, pupil filling, homogeneity, telecentricity, and the like. The mask 4 is thereby illuminated, shown as a transmission mask, but in many cases, however, preferably as a reflection mask. This mask 4 is imaged on a reduced scale by a projection objective 5 onto the object 6, the wafer.
  • The [0028] projection objective 5 contains, as in many known designs, four curved mirrors 51, 52, 53, 54. The structure according to the invention is representatively shown on mirror 53 of these, with the silicon single crystal substrate 531, a thin cover layer 532 of amorphous quartz, which with “super-polish” defines the highly accurate final contour of the mirror 53, and the multilayer reflecting layer 533. The latter provides, as a distributed Bragg reflector, a relatively high reflectivity of about 40-60% for a given spectral region.
  • The shape of the [0029] substrate 531 is determined by the requirements of mechanical stability, cooling, installation into a mount, matching to the beam path (vignetting), and the like. The usable surface is first precisely optically polished to near the final contour. The thin amorphous quartz layer is then deposited. The CVD process, for example, is suitable for this. Deformations of the mirror surfaces due to strains in the layer 532 can be kept to a minimum by the process parameters and after-treatments. They can be kept to a minimum by deflection during the shaping of the substrate 531 and by corresponding polishing of the quartz layer 532.
  • The [0030] amorphous quartz layer 532 thus does not serve as an adhesive base, diffusion barrier, or similar auxiliary layer of the multilayer reflection layers 533, but rather as the material which supports the contour of the mirror 53.
  • The final shaping processing, the so-called “super-polish”, thus follows after the coating with the [0031] quartz layer 532.
  • A [0032] reflection layer 533, constructed as a multilayer EUV reflection layer, is then arranged on this layer 532 in a known manner.
  • Mirrors constructed in this manner can of course be used at any other place of the projection exposure device and also in other devices, e.g., X-ray microscopes or telescopes. [0033]
  • Each material of the substrate member, which is used for the “bulk”, such as the above mentioned materials of low thermal expansion and at the same time high thermal conductivity, can be provided with a thin cover layer of material which can well be polished to optical quality. Conformity as regards adhesion properties, strains, corrosion, and the like can be attained with known criteria. [0034]

Claims (11)

I claim:
1. A mirror comprising:
a substrate of crystal,
an amorphous cover layer applied to said substrate,
and a reflecting layer that covers said amorphous cover layer.
2. The mirror according to
claim 1
, wherein said substrate comprises at least one of the following materials: diamond, BN, SiC, and silicon.
3. The mirror according to
claim 1
, wherein said cover layer comprises at least one of the following amorphous materials: quartz glass, SiO2, and Al2O3.
4. The mirror according to
claim 1
, wherein said amorphous cover layer has a thickness in the range of 1 μm through 100 μm.
5. (Amended) The mirror according to
claim 1
, wherein said amorphous cover layer has a micro-roughness in the angstrom range.
6. (Amended) The mirror according to
claim 1
, wherein said reflecting layer comprises a multilayer constituted for a wavelength region of 10 nm to 20 nm.
7. (Amended) The mirror according to
claim 6
, wherein said multilayer is constituted for a wavelength region of 13 nm.
8. The mirror according to
claim 1
, wherein said mirror has a curved surface.
9. A production process for a mirror, comprising the steps of
shaping a substrate of crystal close to its final contour,
depositing an amorphous cover layer on a mirror side of said substrate,
optical final polishing, and
applying a reflecting layer.
10. The production process according to
claim 9
, comprising depositing said amorphous cover layer by CVD.
11. (Amended) An EUV projection exposure device, comprising:
an EUV source,
an illuminating optics,
a mask,
a projection objective,
a wafer, and
at least one mirror comprising a substrate of crystal, an amorphous cover layer applied to said substrate, and a reflecting layer that covers said amorphous cover layer included in said illuminating optics or in said projection objective.
US09/756,018 1998-07-08 2001-01-05 SiO2-coated mirror substrate for EUV Expired - Lifetime US6453005B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19830449A DE19830449A1 (en) 1998-07-08 1998-07-08 SiO¶2¶ coated mirror substrate for EUV
DE19830449.8 1998-07-08
PCT/EP1999/004209 WO2000003400A1 (en) 1998-07-08 1999-06-17 SiO2 COATED MIRROR SUBSTRATE FOR EUV

Related Parent Applications (1)

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PCT/EP1999/004209 Continuation WO2000003400A1 (en) 1998-07-08 1999-06-17 SiO2 COATED MIRROR SUBSTRATE FOR EUV

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US6453005B2 US6453005B2 (en) 2002-09-17

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EP (1) EP1095379B1 (en)
JP (1) JP2002520601A (en)
KR (1) KR20010079499A (en)
DE (2) DE19830449A1 (en)
TW (1) TWI235245B (en)
WO (1) WO2000003400A1 (en)

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US20040174624A1 (en) * 2001-06-02 2004-09-09 Martin Weiser Reflecting device for electromagnetic waves
US20040202278A1 (en) * 2001-08-16 2004-10-14 Carl-Zeiss Stiftung Trading As Schott-Glas And Carl Zeiss Smt Ag Substrate material for X-ray optical components
US7145739B1 (en) 2002-03-07 2006-12-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Lightweight optical mirrors formed in single crystal substrate
US20080192223A1 (en) * 2007-02-14 2008-08-14 Carl Zeiss Smt Ag Method of producing a diffractive optical element and diffractive optical element produced by such a method
US20080280539A1 (en) * 2007-05-11 2008-11-13 Asml Holding N.V. Optical component fabrication using amorphous oxide coated substrates
US20080318066A1 (en) * 2007-05-11 2008-12-25 Asml Holding N.V. Optical Component Fabrication Using Coated Substrates
WO2012101090A1 (en) * 2011-01-25 2012-08-02 Carl Zeiss Smt Gmbh Process for producing a substrate for a reflective optical element for euv lithography
US20130052468A1 (en) * 2011-08-31 2013-02-28 United Of America As Represented By The Administrator Of The National Ae Method of making lightweight, single crystal mirror

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US7843632B2 (en) * 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
US6855380B2 (en) 2001-05-18 2005-02-15 Carl Zeiss Smt Ag Method for the production of optical components with increased stability, components obtained thereby and their use
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US20040174624A1 (en) * 2001-06-02 2004-09-09 Martin Weiser Reflecting device for electromagnetic waves
US7077533B2 (en) 2001-06-02 2006-07-18 Carl Zeiss Smt Ag Reflecting device for electromagnetic waves
US20040202278A1 (en) * 2001-08-16 2004-10-14 Carl-Zeiss Stiftung Trading As Schott-Glas And Carl Zeiss Smt Ag Substrate material for X-ray optical components
US7031428B2 (en) 2001-08-16 2006-04-18 Carl-Zeiss Smt Ag Substrate material for X-ray optical components
US7145739B1 (en) 2002-03-07 2006-12-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Lightweight optical mirrors formed in single crystal substrate
US20080192223A1 (en) * 2007-02-14 2008-08-14 Carl Zeiss Smt Ag Method of producing a diffractive optical element and diffractive optical element produced by such a method
US8259392B2 (en) 2007-02-14 2012-09-04 Carl Zeiss Smt Gmbh Method of producing a diffractive optical element and diffractive optical element produced by such a method
US20080280539A1 (en) * 2007-05-11 2008-11-13 Asml Holding N.V. Optical component fabrication using amorphous oxide coated substrates
US20080318066A1 (en) * 2007-05-11 2008-12-25 Asml Holding N.V. Optical Component Fabrication Using Coated Substrates
WO2012101090A1 (en) * 2011-01-25 2012-08-02 Carl Zeiss Smt Gmbh Process for producing a substrate for a reflective optical element for euv lithography
US20130052468A1 (en) * 2011-08-31 2013-02-28 United Of America As Represented By The Administrator Of The National Ae Method of making lightweight, single crystal mirror
US9075188B2 (en) * 2011-08-31 2015-07-07 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of making lightweight, single crystal mirror

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DE59902673D1 (en) 2002-10-17
EP1095379B1 (en) 2002-09-11
TWI235245B (en) 2005-07-01
US6453005B2 (en) 2002-09-17
KR20010079499A (en) 2001-08-22
WO2000003400A1 (en) 2000-01-20
JP2002520601A (en) 2002-07-09
EP1095379A1 (en) 2001-05-02
DE19830449A1 (en) 2000-01-27

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