JPS6453408A - Manufacture of single crystal multilayer film - Google Patents
Manufacture of single crystal multilayer filmInfo
- Publication number
- JPS6453408A JPS6453408A JP20931687A JP20931687A JPS6453408A JP S6453408 A JPS6453408 A JP S6453408A JP 20931687 A JP20931687 A JP 20931687A JP 20931687 A JP20931687 A JP 20931687A JP S6453408 A JPS6453408 A JP S6453408A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- amorphous
- deposited
- multilayer film
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To easily manufacture a semiconductor single crystal multilayer film having a smooth mirror face, by a method wherein at least two or more layers of amorphous thin films are deposited on a semiconductor single crystal substrate in the order of the solid phase growth speed starting from the film having the highest growth speed, and after a crystallizing work is conducted from the bottom layer so that the deposited layers other than the top layer can be maintained in the substrate crystal orientation, the top layer of the deposition layer is removed by etching, and the semiconductor single crystal multilayer having uniform mirror face can be manufactured easily. CONSTITUTION:Amorphous Ge 2 is deposited on an Si single crystal substrate 1, and an amorphous Si 3 is deposited thereon. Then, the amorphous Ge 2 is formed into a crystallized Ge 4 by solid-phase growth by conducting annealing. Then, the top layer of amorphous Si layer 3 is removed by etching, and the crystallized Ge 4 is obtained on the Si single crystal substrate 1. Through the above-mentioned procedures, the semiconductor single crystal multilayer film having the non-roughened mirror surface can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20931687A JPS6453408A (en) | 1987-08-25 | 1987-08-25 | Manufacture of single crystal multilayer film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20931687A JPS6453408A (en) | 1987-08-25 | 1987-08-25 | Manufacture of single crystal multilayer film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6453408A true JPS6453408A (en) | 1989-03-01 |
Family
ID=16570933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20931687A Pending JPS6453408A (en) | 1987-08-25 | 1987-08-25 | Manufacture of single crystal multilayer film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453408A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000003400A1 (en) * | 1998-07-08 | 2000-01-20 | Carl Zeiss | SiO2 COATED MIRROR SUBSTRATE FOR EUV |
-
1987
- 1987-08-25 JP JP20931687A patent/JPS6453408A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000003400A1 (en) * | 1998-07-08 | 2000-01-20 | Carl Zeiss | SiO2 COATED MIRROR SUBSTRATE FOR EUV |
US6453005B2 (en) * | 1998-07-08 | 2002-09-17 | Carl-Zeïss-Stiftung | SiO2-coated mirror substrate for EUV |
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