JPS6453408A - Manufacture of single crystal multilayer film - Google Patents

Manufacture of single crystal multilayer film

Info

Publication number
JPS6453408A
JPS6453408A JP20931687A JP20931687A JPS6453408A JP S6453408 A JPS6453408 A JP S6453408A JP 20931687 A JP20931687 A JP 20931687A JP 20931687 A JP20931687 A JP 20931687A JP S6453408 A JPS6453408 A JP S6453408A
Authority
JP
Japan
Prior art keywords
single crystal
amorphous
deposited
multilayer film
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20931687A
Other languages
Japanese (ja)
Inventor
Kiyokazu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20931687A priority Critical patent/JPS6453408A/en
Publication of JPS6453408A publication Critical patent/JPS6453408A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To easily manufacture a semiconductor single crystal multilayer film having a smooth mirror face, by a method wherein at least two or more layers of amorphous thin films are deposited on a semiconductor single crystal substrate in the order of the solid phase growth speed starting from the film having the highest growth speed, and after a crystallizing work is conducted from the bottom layer so that the deposited layers other than the top layer can be maintained in the substrate crystal orientation, the top layer of the deposition layer is removed by etching, and the semiconductor single crystal multilayer having uniform mirror face can be manufactured easily. CONSTITUTION:Amorphous Ge 2 is deposited on an Si single crystal substrate 1, and an amorphous Si 3 is deposited thereon. Then, the amorphous Ge 2 is formed into a crystallized Ge 4 by solid-phase growth by conducting annealing. Then, the top layer of amorphous Si layer 3 is removed by etching, and the crystallized Ge 4 is obtained on the Si single crystal substrate 1. Through the above-mentioned procedures, the semiconductor single crystal multilayer film having the non-roughened mirror surface can be obtained.
JP20931687A 1987-08-25 1987-08-25 Manufacture of single crystal multilayer film Pending JPS6453408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20931687A JPS6453408A (en) 1987-08-25 1987-08-25 Manufacture of single crystal multilayer film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20931687A JPS6453408A (en) 1987-08-25 1987-08-25 Manufacture of single crystal multilayer film

Publications (1)

Publication Number Publication Date
JPS6453408A true JPS6453408A (en) 1989-03-01

Family

ID=16570933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20931687A Pending JPS6453408A (en) 1987-08-25 1987-08-25 Manufacture of single crystal multilayer film

Country Status (1)

Country Link
JP (1) JPS6453408A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000003400A1 (en) * 1998-07-08 2000-01-20 Carl Zeiss SiO2 COATED MIRROR SUBSTRATE FOR EUV

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000003400A1 (en) * 1998-07-08 2000-01-20 Carl Zeiss SiO2 COATED MIRROR SUBSTRATE FOR EUV
US6453005B2 (en) * 1998-07-08 2002-09-17 Carl-Zeïss-Stiftung SiO2-coated mirror substrate for EUV

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