TW201536542A - Manufacturing method of support substrate with resin layer, manufacturing method of glass laminated body and manufacturing method of electronic device - Google Patents

Manufacturing method of support substrate with resin layer, manufacturing method of glass laminated body and manufacturing method of electronic device Download PDF

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Publication number
TW201536542A
TW201536542A TW103144171A TW103144171A TW201536542A TW 201536542 A TW201536542 A TW 201536542A TW 103144171 A TW103144171 A TW 103144171A TW 103144171 A TW103144171 A TW 103144171A TW 201536542 A TW201536542 A TW 201536542A
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support substrate
layer
curable
resin layer
substrate
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TW103144171A
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Chinese (zh)
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TWI652165B (en
Inventor
Yuichi Hino
Yutaka Otsubo
Takuya Nagano
Katsumichi Shirakura
Kosuke Takada
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Asahi Glass Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025Transfer laminating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006Delaminating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B2037/0092Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding in which absence of adhesives is explicitly presented as an advantage
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment

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  • Laminated Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The present invention relates to a method for manufacturing a support substrate with an attached resin layer which includes a support substrate and a silicon resin layer and is used to manufacture a glass laminate by laminating a glass substrate on the silicon resin layer. The method includes: an application process of forming a curable silicon composition layer on the support substrate by applying a curable silicon composition including curable silicon and a solvent on the support substrate, and then obtaining a curable layer attachment support substrate including the support substrate and the silicon composition layer; an insertion process of inserting the curable layer attachment support substrate into a heat processing apparatus and then stacking the curable layer attachment support substrate on support pins in the heat processing apparatus; a first heating process of arranging a heating plate on an upper side of the curable silicon composition layer of the curable layer attachment support substrate, executing ventilation, performing a heating process on the curable layer attachment support substrate at a first temperate or lower, and removing the solvent remaining on the curable silicon composition layer; a moving process of placing the curable silicon composition layer apart from the heating plate after the first heating process; an extraction process of extracting the curable layer attachment support substrate from the heating process apparatus; and a second heating process of performing a heat process on the curable layer attachment support substrate at a second temperature higher than the first temperature.

Description

附樹脂層之支持基板之製造方法、玻璃積層體之製造方法及電子裝置之製造方法 Manufacturing method of supporting substrate with resin layer, method for producing glass laminate, and method for manufacturing electronic device

本發明係關於一種附樹脂層之支持基板之製造方法、玻璃積層體之製造方法及電子裝置之製造方法。 The present invention relates to a method for producing a support substrate with a resin layer, a method for producing a glass laminate, and a method for producing an electronic device.

近年來,太陽電池(PV)、液晶面板(LCD)、有機EL(Electroluminescence,電致發光)面板(OLED)等裝置(電子設備)之薄型化、輕量化不斷進展,該等裝置所使用之玻璃基板之薄板化正不斷發展。若因薄板化導致玻璃基板之強度不足,則於裝置之製造步驟中,玻璃基板之操作性降低。 In recent years, thinner and lighter devices (electronic devices) such as solar cells (PV), liquid crystal panels (LCDs), and organic EL (Electroluminescence) panels (OLEDs) have been developed, and the glass used in such devices has been progressing. The thinning of the substrate is constantly evolving. If the strength of the glass substrate is insufficient due to thinning, the handleability of the glass substrate is lowered in the manufacturing process of the device.

最近,為了應對上述課題,而提出有如下方法,即準備積層有玻璃基板與補強板之玻璃積層體,於玻璃積層體之玻璃基板上形成顯示裝置等電子裝置用構件後,將補強板自玻璃基板分離(例如,參照專利文獻1)。補強板具有支持基板、及固定於該支持基板上之聚矽氧樹脂層,且將聚矽氧樹脂層與玻璃基板以可剝離之方式進行密接。於玻璃積層體之聚矽氧樹脂層與玻璃基板之界面將補強板剝離,自玻璃基板分離之補強板可與新的玻璃基板積層,而作為玻璃積層體進行再利用。 Recently, in order to cope with the above-mentioned problems, a glass laminate in which a glass substrate and a reinforcing plate are laminated is prepared, and a member for an electronic device such as a display device is formed on a glass substrate of a glass laminate, and then the reinforcing plate is made of glass. The substrate is separated (for example, refer to Patent Document 1). The reinforcing plate has a supporting substrate and a polyoxyalkylene resin layer fixed to the supporting substrate, and the polyoxyxylene resin layer and the glass substrate are adhered to each other in a peelable manner. The reinforcing plate is peeled off at the interface between the polyoxygen resin layer of the glass laminate and the glass substrate, and the reinforcing plate separated from the glass substrate can be laminated with a new glass substrate to be reused as a glass laminate.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開第2007/018028號 [Patent Document 1] International Publication No. 2007/018028

另一方面,自先前已知有將表面配置有塗膜之支持基板載置於複數個支持銷之頂部而進行加熱乾燥之方法。又,作為進行加熱乾燥之方法,已知有使用設置有加熱板之加熱處理裝置之方法。 On the other hand, a method in which a support substrate having a coating film on its surface is placed on top of a plurality of support pins and heated and dried is known. Further, as a method of performing heat drying, a method of using a heat treatment apparatus provided with a hot plate is known.

本發明者等人依據專利文獻1所記載之方法而製作補強板時,將表面配置有藉由加熱而成為聚矽氧樹脂層之塗膜的支持基板載置於設置於加熱處理裝置內之複數個支持銷之頂部,於塗膜上配置加熱板而進行預烘烤處理,其後實施後烘烤處理而形成聚矽氧樹脂層後,於聚矽氧樹脂層上積層玻璃基板而製作玻璃積層體。繼而,對所獲得之玻璃積層體實施加熱處理,對玻璃基板之剝離性進行評價,結果發現聚矽氧樹脂層之一部分凝聚破壞而附著於玻璃基板表面上。 When the inventors of the present invention produced the reinforcing plate according to the method described in Patent Document 1, the supporting substrate on which the coating film of the polyoxyxylene resin layer is heated by the surface is placed on the plurality of heat treatment devices. On the top of each of the support pins, a hot plate is placed on the coating film to perform a prebaking treatment, and then a post-baking treatment is performed to form a polyoxyxylene resin layer, and then a glass substrate is laminated on the polyoxynoxy resin layer to form a glass laminate. body. Then, the obtained glass laminate was subjected to heat treatment, and the peeling property of the glass substrate was evaluated. As a result, it was found that one of the polyoxynitride layers was agglomerated and adhered to the surface of the glass substrate.

若聚矽氧樹脂附著於玻璃基板,則所獲得之電子裝置不適合用作製品,因此有電子裝置之良率降低,生產性降低之虞。 If the polyoxyxene resin is attached to the glass substrate, the obtained electronic device is not suitable for use as a product, and thus the yield of the electronic device is lowered, and the productivity is lowered.

本發明係鑒於上述課題而完成者,其目的在於提供一種具有支持基板及聚矽氧樹脂層之附樹脂層之支持基板之製造方法,該附樹脂層之支持基板係用於剝離玻璃基板時更為抑制聚矽氧樹脂層之凝聚破壞的玻璃積層體之製造。 The present invention has been made in view of the above problems, and an object of the invention is to provide a method for producing a support substrate having a resin layer supporting a substrate and a polyoxynitride resin layer, wherein the support substrate for the resin layer is used for peeling off the glass substrate. The production of a glass laminate for suppressing aggregation failure of the polyoxyn resin layer.

又,本發明之目的亦在於提供一種使用藉由該附樹脂層之支持基板之製造方法製造之附樹脂層之支持基板的玻璃積層體之製造方法、及使用該玻璃積層體之電子裝置之製造方法。 Moreover, an object of the present invention is to provide a method for producing a glass laminate using a support substrate with a resin layer produced by the method for producing a support substrate with a resin layer, and an electronic device using the glass laminate. method.

本發明者等人為解決上述課題而進行努力研究,結果完成本發明。 The inventors of the present invention have diligently studied to solve the above problems, and as a result, have completed the present invention.

即,本發明之第1態樣係一種附樹脂層之支持基板之製造方法,該附樹脂層之支持基板具有支持基板與設置於支持基板之單面之聚矽 氧樹脂層,且用於在聚矽氧樹脂層上積層玻璃基板而製造玻璃積層體,該附樹脂層之支持基板之製造方法依序包含:塗佈步驟,其係將包含硬化性聚矽氧與溶劑之硬化性聚矽氧組合物塗佈於支持基板上,於支持基板上形成硬化性聚矽氧組合物層,而獲得包含支持基板及硬化性聚矽氧組合物層之附硬化性層之支持基板;搬入步驟,其係向加熱處理裝置內搬入附硬化性層之支持基板,並於加熱處理裝置內之支持銷上載置附硬化性層之支持基板;第1加熱步驟,其係於附硬化性層之支持基板之硬化性聚矽氧組合物層上部配置加熱板,一面進行排氣,一面於第1溫度以下的溫度對附硬化性層之支持基板進行加熱處理,而將殘留於硬化性聚矽氧組合物層之溶劑去除;移動步驟,其係於第1加熱步驟後,使實施過加熱處理之硬化性聚矽氧組合物層離開加熱板;搬出步驟,其係將附硬化性層之支持基板自加熱處理裝置搬出;及第2加熱步驟,其係於較第1溫度高之第2溫度下對附硬化性層之支持基板進行加熱處理,而獲得聚矽氧樹脂層。 That is, the first aspect of the present invention is a method of manufacturing a support substrate with a resin layer having a support substrate and a single side disposed on the support substrate. An oxygen resin layer for laminating a glass substrate on a polyoxyxene resin layer to produce a glass laminate, and the method for manufacturing the support substrate of the resin layer includes, in order, a coating step, which comprises containing a curable polysiloxane The curable polyaluminoxy composition with a solvent is applied onto the support substrate to form a hardenable polyoxynitride composition layer on the support substrate, thereby obtaining a hardenable layer including the support substrate and the curable polyoxynitride composition layer. a support substrate; a carry-in step of loading a support substrate having a curable layer into a heat treatment device, and placing a support substrate on which a curable layer is placed on a support pin in the heat treatment device; and the first heating step is performed on the support substrate A heating plate is disposed on the upper portion of the curable polyoxynitride composition layer of the support substrate with the curable layer, and while the exhaust gas is exhausted, the support substrate having the curable layer is heat-treated at a temperature equal to or lower than the first temperature, and remains on the support substrate. a solvent removal step of the curable polydecane oxide composition layer; and a moving step of removing the hardened polyoxyxide composition layer subjected to the heat treatment from the heating plate after the first heating step; a step of carrying out the support substrate with the curable layer from the heat treatment device, and a second heating step of heat-treating the support substrate with the curable layer at a second temperature higher than the first temperature. A polyoxygenated resin layer was obtained.

於第1態樣中,硬化性聚矽氧較佳為包含具有烯基之有機烯基聚矽氧烷、及具有鍵結於矽原子之氫原子之有機氫聚矽氧烷。 In the first aspect, the curable polyfluorene oxide is preferably an organic alkenyl polyoxyalkylene having an alkenyl group and an organic hydrogen polyoxyalkylene having a hydrogen atom bonded to a deuterium atom.

於第1態樣中,第1溫度較佳為滿足溶劑之初餾點-30℃≦第1溫度≦溶劑之初餾點+30℃。 In the first aspect, the first temperature preferably satisfies the initial boiling point of the solvent -30 ° C ≦ the first temperature 初 the initial boiling point of the solvent + 30 ° C.

本發明之第2態樣係一種玻璃積層體之製造方法,其具有積層步驟:於藉由第1態樣製造之附樹脂層之支持基板中之聚矽氧樹脂層上積層玻璃基板,而獲得依序具有支持基板、聚矽氧樹脂層、及玻璃基板之玻璃積層體。 A second aspect of the present invention provides a method for producing a glass laminate having a lamination step of laminating a glass substrate on a polyoxynated resin layer in a support substrate with a resin layer produced in the first aspect. The glass laminate of the support substrate, the polyoxymethylene resin layer, and the glass substrate is sequentially provided.

本發明之第3態樣係一種電子裝置之製造方法,其包含:構件形成步驟,其係於藉由第2態樣製造之玻璃積層體之玻璃基板之表面上形成電子裝置用構件,而獲得附電子裝置用構件之積層體;及分離步驟,其係自附電子裝置用構件之積層體去除附樹脂層之支持基板,而 獲得具有玻璃基板與電子裝置用構件之電子裝置。 A third aspect of the present invention provides a method of manufacturing an electronic device, comprising: a member forming step of forming a member for an electronic device on a surface of a glass substrate of a glass laminate manufactured by the second aspect; a laminate having a member for an electronic device; and a separating step of removing the support substrate with the resin layer from the laminate of the member for the electronic device; An electronic device having a member for a glass substrate and an electronic device is obtained.

根據本發明,可提供一種具有支持基板及聚矽氧樹脂層之附樹脂層之支持基板之製造方法,該附樹脂層之支持基板係用於更為抑制剝離玻璃基板時之聚矽氧樹脂層之凝聚破壞的玻璃積層體之製造。 According to the present invention, it is possible to provide a method of manufacturing a support substrate having a resin layer supporting a substrate and a polyoxyxylene resin layer, the support substrate of the resin layer being used for more suppressing the polyoxyalkylene resin layer when the glass substrate is peeled off. The manufacture of agglomerated glass laminates.

又,根據本發明,亦可提供一種使用藉由該附樹脂層之支持基板之製造方法製造之附樹脂層之支持基板的玻璃積層體之製造方法、及使用該玻璃積層體之電子裝置之製造方法。 Moreover, according to the present invention, a method for producing a glass laminate using a support substrate with a resin layer produced by the method for producing a support substrate with a resin layer, and an electronic device using the glass laminate can be provided. method.

10‧‧‧支持基板 10‧‧‧Support substrate

12‧‧‧硬化性聚矽氧組合物層 12‧‧‧ hardened polysiloxane composition layer

14‧‧‧附硬化性層之支持基板 14‧‧‧Support substrate with hardened layer

16‧‧‧聚矽氧樹脂層 16‧‧‧Polyoxy resin layer

16a‧‧‧聚矽氧樹脂層中之與支持基板側相反側之表面 16a‧‧‧ Surface of the polyoxyl resin layer opposite to the support substrate side

18‧‧‧附樹脂層之支持基板 18‧‧‧Support substrate with resin layer

20‧‧‧玻璃基板 20‧‧‧ glass substrate

20a‧‧‧玻璃基板之第1主面 20a‧‧‧1st main surface of the glass substrate

20b‧‧‧玻璃基板之第2主面 20b‧‧‧2nd main surface of the glass substrate

22‧‧‧電子裝置用構件 22‧‧‧Members for electronic devices

24‧‧‧附電子裝置用構件之積層體 24‧‧‧Laminated body of components for electronic devices

26‧‧‧電子裝置 26‧‧‧Electronic devices

30‧‧‧加熱處理裝置 30‧‧‧heat treatment unit

32‧‧‧加熱室 32‧‧‧heating room

34‧‧‧支持銷 34‧‧‧Support pins

36‧‧‧支持台 36‧‧‧Support Desk

38‧‧‧加熱板 38‧‧‧heating plate

40‧‧‧排氣管 40‧‧‧Exhaust pipe

42‧‧‧搬入出口 42‧‧‧ Moving into the exit

100‧‧‧玻璃積層體 100‧‧‧glass laminate

圖1係表示本發明之附樹脂層之支持基板之製造方法的製造步驟之流程圖。 Fig. 1 is a flow chart showing the manufacturing steps of a method for producing a support substrate with a resin layer of the present invention.

圖2(A)及(B)係以步驟順序表示本發明之附樹脂層之支持基板之製造方法的一實施形態之模式剖面圖。 2(A) and 2(B) are schematic cross-sectional views showing an embodiment of a method of manufacturing a support substrate with a resin layer of the present invention in the order of steps.

圖3係表示加熱處理裝置之構成之模式剖面圖。 Fig. 3 is a schematic cross-sectional view showing the configuration of a heat treatment apparatus.

圖4係本發明之玻璃積層體之模式剖面圖。 Figure 4 is a schematic cross-sectional view showing a glass laminate of the present invention.

圖5(A)及(B)係以步驟順序表示本發明之電子裝置之製造方法之一實施形態的模式剖面圖。 5(A) and 5(B) are schematic cross-sectional views showing an embodiment of a method of manufacturing an electronic device according to the present invention in order of steps.

以下,針對本發明之較佳實施態樣,參照圖式進行說明,但本發明並不受以下之實施形態限制,於不脫離本發明之範圍之情況下,可於以下之實施形態中施加各種變化及置換。 In the following, the preferred embodiments of the present invention are described with reference to the drawings, but the present invention is not limited to the following embodiments, and various embodiments may be applied in the following embodiments without departing from the scope of the invention. Change and replacement.

本發明者等人對上述問題進行研究時發現,使用配置於硬化性聚矽氧組合物層之上部之加熱板對硬化性聚矽氧組合物層進行乾燥時,殘留於硬化性聚矽氧組合物層之溶劑揮發而滯留於加熱板與硬化性聚矽氧組合物層之間,其係上述問題之原因之一。若此種滯留之揮發溶劑大量存在,則殘留溶劑難以自硬化性聚矽氧組合物層揮發,並 且自加熱處理裝置將附硬化性層之支持基板搬出時,溶劑再次回到硬化性聚矽氧組合物層上,而硬化性聚矽氧組合物層之硬化性降低,作為結果,推測凝聚破壞變得容易進行。 The inventors of the present invention have studied the above problems and found that when the layer of the curable polydecane oxide composition is dried using a hot plate disposed on the upper portion of the layer of the curable polydecane oxide composition, it remains in the curable polyoxyl combination. The solvent of the layer is volatilized and stays between the hot plate and the layer of the curable polyoxynitride composition, which is one of the causes of the above problems. If such a residual volatile solvent is present in a large amount, it is difficult for the residual solvent to volatilize from the layer of the curable polyoxo composition, and When the support substrate with the curable layer is carried out from the heat treatment device, the solvent returns to the curable polyoxynitride composition layer again, and the hardenability of the curable polyoxynitride composition layer is lowered, and as a result, the aggregation failure is presumed. It becomes easy to carry out.

因此,推測可藉由如下方式而獲得所需之效果,即於加熱結束後使加熱板與硬化性聚矽氧組合物層遠離而使兩者之間之空間擴大,藉此促進溶劑之排氣,從而所滯留之溶劑濃度降低,而使對聚矽氧樹脂層之影響降低。 Therefore, it is presumed that the desired effect can be obtained by, after the end of the heating, the heating plate and the curable polyaluminoxy composition layer are separated to expand the space between the two, thereby promoting the solvent exhaust. Therefore, the concentration of the solvent remaining is lowered, and the influence on the polyoxymethylene resin layer is lowered.

圖1係表示本發明之附樹脂層之支持基板之製造方法中之製造步驟的流程圖。如圖1所示,附樹脂層之支持基板之製造方法包含:塗佈步驟S102、搬入步驟S104、第1加熱步驟S106、移動步驟S108、搬出步驟S110、及第2加熱步驟S112。 Fig. 1 is a flow chart showing the manufacturing steps in the method for producing a support substrate with a resin layer of the present invention. As shown in FIG. 1, a manufacturing method of a support substrate with a resin layer includes a coating step S102, a loading step S104, a first heating step S106, a moving step S108, a carrying-out step S110, and a second heating step S112.

以下,對各步驟中所使用之材料及其程序進行詳述。首先,對塗佈步驟S102進行詳述。 Hereinafter, the materials used in the respective steps and their procedures will be described in detail. First, the coating step S102 will be described in detail.

<塗佈步驟> <Coating step>

塗佈步驟S102係將包含硬化性聚矽氧與溶劑之硬化性聚矽氧組合物塗佈於支持基板上,而於支持基板上形成硬化性聚矽氧組合物層,從而獲得包含支持基板及硬化性聚矽氧組合物層之附硬化性層之支持基板的步驟。藉由實施該步驟S102,而可如圖2(A)所示般於支持基板10上形成硬化性聚矽氧組合物層12而獲得附硬化性層之支持基板14。 In the coating step S102, a curable polyfluorene oxide composition containing a curable polyfluorene oxide and a solvent is applied onto a support substrate, and a curable polyoxynitride composition layer is formed on the support substrate, thereby obtaining a support substrate and The step of supporting the substrate with the hardenable layer of the hardenable polyoxynitride composition layer. By performing this step S102, the curable polysilicon composition layer 12 can be formed on the support substrate 10 as shown in FIG. 2(A) to obtain the support substrate 14 with the curable layer.

以下,首先對本步驟S102中所使用之材料(支持基板、硬化性聚矽氧組合物)進行詳述,其後對該步驟S102之程序進行詳述。 Hereinafter, the materials (support substrate, curable polyfluorene oxide composition) used in the step S102 will be described in detail first, and then the procedure of the step S102 will be described in detail.

(支持基板) (support substrate)

支持基板10係具有表面及背面2個主面,且與下述之聚矽氧樹脂層16協動,支持並補強下述之玻璃基板20,而於下述之構件形成步驟(電子裝置用構件之製造步驟)中防止電子裝置用構件之製造時玻璃基 板20之變形、損傷、破損等。又,於使用厚度較先前薄之玻璃基板之情形時,可藉由製成與先前之玻璃基板相同厚度之玻璃積層體,而於構件形成步驟中使用適合先前之厚度之玻璃基板之製造技術或製造設備,其亦為使用支持基板10之目的之一。 The support substrate 10 has two main surfaces, a front surface and a back surface, and cooperates with the polyoxyxene resin layer 16 described below to support and reinforce the glass substrate 20 described below, and the member forming step (electronic device member) described below Glass-based in the manufacture of components for preventing electronic devices in the manufacturing step) Deformation, damage, damage, etc. of the board 20. Moreover, in the case of using a glass substrate having a thickness smaller than that of the prior art, a glass laminate having the same thickness as the previous glass substrate can be used, and a manufacturing method suitable for the glass substrate of the previous thickness can be used in the member forming step or The manufacturing equipment is also one of the purposes of using the support substrate 10.

作為支持基板10,例如可使用玻璃板、塑膠板、SUS(Steel Use Stainless,日本不鏽鋼標準)板等金屬板、陶瓷板等。於構件形成步驟伴隨著熱處理之情形時,支持基板10較佳為由與玻璃基板20之線膨脹係數之差較小之材料形成,更佳為由與玻璃基板20相同之材料形成。即,支持基板10較佳為玻璃板。尤其是支持基板10較佳為包含與玻璃基板20相同之玻璃材料之玻璃板。 As the support substrate 10, for example, a glass plate, a plastic plate, a metal plate such as a SUS (Steel Use Stainless) plate, a ceramic plate, or the like can be used. In the case where the member forming step is accompanied by heat treatment, the support substrate 10 is preferably formed of a material having a small difference in linear expansion coefficient from the glass substrate 20, and more preferably formed of the same material as the glass substrate 20. That is, the support substrate 10 is preferably a glass plate. In particular, the support substrate 10 is preferably a glass plate containing the same glass material as the glass substrate 20.

關於支持基板10之厚度,可厚於玻璃基板20,亦可薄於玻璃基板20。較佳為基於玻璃基板20之厚度、樹脂層16之厚度、及玻璃積層體之厚度而選擇支持基板10之厚度。例如,現行之構件形成步驟係為了對厚度0.5mm之基板進行處理而設計者,於玻璃基板20之厚度與樹脂層16之厚度之和為0.1mm之情形時,將支持基板10之厚度設為0.4mm。支持基板10之厚度於通常之情形時較佳為0.2~5.0mm。 The thickness of the support substrate 10 may be thicker than the glass substrate 20 or thinner than the glass substrate 20. The thickness of the support substrate 10 is preferably selected based on the thickness of the glass substrate 20, the thickness of the resin layer 16, and the thickness of the glass laminate. For example, the current member forming step is designed to treat a substrate having a thickness of 0.5 mm. When the sum of the thickness of the glass substrate 20 and the thickness of the resin layer 16 is 0.1 mm, the thickness of the support substrate 10 is set to 0.4mm. The thickness of the support substrate 10 is preferably 0.2 to 5.0 mm in the usual case.

於支持基板10為玻璃板之情形時,關於玻璃板之厚度,就操作容易、難以破損等理由而言,較佳為0.08mm以上。又,關於玻璃板之厚度,就於電子裝置用構件形成後進行剝離時,期望有如不破損而適度彎曲之剛性之理由而言,較佳為1.0mm以下。 When the support substrate 10 is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more for reasons of easy handling and difficulty in damage. In addition, when the thickness of the glass plate is peeled off after the member for electronic device is formed, it is preferably 1.0 mm or less for the reason that the rigidity is moderately bent without being damaged.

支持基板10與玻璃基板20之於25~300℃下之平均線膨脹係數(以下,簡稱為「平均線膨脹係數」)之差較佳為500×10-7/℃以下,更佳為300×10-7/℃以下,進而較佳為200×10-7/℃以下。若差過大,則於構件形成步驟中之加熱冷卻時,有玻璃積層體猛烈地彎曲,或玻璃基板20與下述之附樹脂層之支持基板18剝離之可能性。於玻璃基板20之材料與支持基板10之材料相同之情形時,可抑制上述問題產生。 The difference between the average linear expansion coefficient (hereinafter, simply referred to as "average linear expansion coefficient") of the support substrate 10 and the glass substrate 20 at 25 to 300 ° C is preferably 500 × 10 -7 / ° C or less, more preferably 300 × 10 -7 / ° C or less, further preferably 200 × 10 -7 / ° C or less. When the difference is too large, the glass laminate is strongly bent during the heating and cooling in the member forming step, or the glass substrate 20 may be peeled off from the support substrate 18 with the resin layer described below. When the material of the glass substrate 20 is the same as the material of the support substrate 10, the above problem can be suppressed.

(硬化性聚矽氧組合物) (curable polyoxyl composition)

硬化性聚矽氧組合物至少含有硬化性聚矽氧與溶劑。如下所述,可藉由將該硬化性聚矽氧組合物塗佈於支持基板10上而獲得含有硬化性聚矽氧之硬化性聚矽氧組合物層。 The curable polydecene oxide composition contains at least a curable polyfluorene oxide and a solvent. As described below, the curable polyfluorene-containing composition of the curable polyfluorene oxide can be obtained by applying the curable polydecane oxide composition onto the support substrate 10.

以下,對該組合物中所含有之材料進行詳述。 Hereinafter, the materials contained in the composition will be described in detail.

所謂硬化性聚矽氧,係進行硬化而成為聚矽氧樹脂之化合物或組合物。此種硬化性聚矽氧係根據其硬化機制而被分類為縮合反應型聚矽氧、加成反應型聚矽氧、紫外線硬化型聚矽氧及電子束硬化型聚矽氧等,可使用上述中任一種之硬化型聚矽氧。該等中較佳為加成反應型聚矽氧。其原因在於:硬化反應容易進行,且形成聚矽氧樹脂層時之剝離性之程度良好,並且耐熱性亦較高。 The curable polyfluorene is a compound or composition which is cured to form a polyoxyxylene resin. The curable polyfluorene oxide is classified into a condensation reaction type polyoxane, an addition reaction type polyoxane, an ultraviolet curing type polyfluorene oxygen, and an electron beam curing type polyoxane according to the hardening mechanism. Any of the hardened polyfluorenes. Among these, an addition reaction type polyoxane is preferred. The reason for this is that the hardening reaction proceeds easily, and the degree of peeling property when the polyoxynoxy resin layer is formed is good, and the heat resistance is also high.

加成反應型聚矽氧係含有主劑及交聯劑,且於鉑系觸媒等觸媒之存在下進行硬化之硬化性組合物。加成反應型聚矽氧之硬化係藉由加熱處理而促進。加成反應型聚矽氧中之主劑較佳為具有鍵結於矽原子之烯基(乙烯基等)之有機聚矽氧烷(即,有機烯基聚矽氧烷;再者,較佳為直鏈狀),且烯基等成為交聯點。加成反應型聚矽氧中之交聯劑較佳為具有鍵結於矽原子之氫原子(氫化矽烷基)之有機聚矽氧烷(即,有機氫聚矽氧烷;再者,較佳為直鏈狀),且氫化矽烷基等成為交聯點。 The addition reaction type polyoxo oxygen-based composition contains a main component and a crosslinking agent, and is hardened by the presence of a catalyst such as a platinum-based catalyst. The hardening of the addition reaction type polyoxygen is promoted by heat treatment. The main component in the addition reaction type polyoxo is preferably an organic polyoxyalkylene having an alkenyl group (vinyl group or the like) bonded to a halogen atom (i.e., an organic alkenyl polyoxyalkylene; further, preferably It is a linear chain), and an alkenyl group etc. become a crosslinking point. The crosslinking agent in the addition reaction type polyoxo is preferably an organic polyoxyalkylene having a hydrogen atom (hydrogenated alkylene group) bonded to a halogen atom (that is, an organic hydrogen polyoxyalkylene; further, preferably It is linear), and a hydrogenated alkylene group or the like becomes a crosslinking point.

加成反應型聚矽氧係藉由主劑與交聯劑之交聯點進行加成反應而進行硬化。再者,就源自交聯結構之耐熱性更優異之方面而言,有機氫聚矽氧烷之鍵結於矽原子之氫原子相對於有機烯基聚矽氧烷之烯基的莫耳比較佳為0.5~2。 The addition reaction type polyoxymethylene is hardened by an addition reaction of a crosslinking point of a main agent and a crosslinking agent. Further, in terms of the more excellent heat resistance derived from the crosslinked structure, the molar ratio of the hydrogen atom of the organohydrogenpolyoxyalkylene bonded to the hydrogen atom of the halogen atom relative to the alkenyl group of the organic alkenyl polyoxyalkylene is further compared. Good for 0.5~2.

硬化性聚矽氧組合物包含溶劑。溶劑較佳為可容易地使各種成分溶解,且可容易地被揮發去除者。具體而言,例如可列示:乙酸丁酯、庚烷、2-庚酮、1-甲氧基-2-丙醇乙酸酯、甲苯、二甲苯、 THF(Tetrahydrofuran,四氫呋喃)、氯仿等。其中,較佳為飽和烴,可自各種飽和烴(直鏈狀飽和烴、支鏈狀飽和烴、脂環式飽和烴)之1種或2種以上使用成為實際之各種飽和烴溶劑。例如可列舉:Isopar G(Exxon Mobil有限公司製造)、Isopar L(Exxon Mobil有限公司製造)、Isopar H(Exxon Mobil有限公司製造)、Isopar M(Exxon Mobil有限公司製造)、NORPAR 13(Exxon Mobil有限公司製造)、NORPAR 15(Exxon Mobil有限公司製造)、Exxsol D40(Exxon Mobil有限公司製造)、Exxsol D60(Exxon Mobil有限公司製造)、Exxsol D80(Exxon Mobil有限公司製造)、Neothiosol(中央化成股份有限公司製造)、IP Solvent 2028(出光興產股份有限公司製造)。 The curable polydecyloxy composition comprises a solvent. The solvent is preferably one which can easily dissolve various components and can be easily removed by volatilization. Specifically, for example, butyl acetate, heptane, 2-heptanone, 1-methoxy-2-propanol acetate, toluene, xylene, THF (Tetrahydrofuran, tetrahydrofuran), chloroform, and the like. In particular, a saturated hydrocarbon is used, and one or two or more kinds of various saturated hydrocarbons (linear saturated hydrocarbons, branched saturated hydrocarbons, and alicyclic saturated hydrocarbons) can be used as practical various saturated hydrocarbon solvents. For example, Isopar G (manufactured by Exxon Mobil Co., Ltd.), Isopar L (manufactured by Exxon Mobil Co., Ltd.), Isopar H (manufactured by Exxon Mobil Co., Ltd.), Isopar M (manufactured by Exxon Mobil Co., Ltd.), NORPAR 13 (Exxon Mobil Co., Ltd.) Made by the company), NORPAR 15 (manufactured by Exxon Mobil Co., Ltd.), Exxsol D40 (manufactured by Exxon Mobil Co., Ltd.), Exxsol D60 (manufactured by Exxon Mobil Co., Ltd.), Exxsol D80 (manufactured by Exxon Mobil Co., Ltd.), Neothiosol (Centralized Chemicals Co., Ltd.) Made by the company), IP Solvent 2028 (manufactured by Idemitsu Kosan Co., Ltd.).

其中,就如下述般於第1加熱步驟中溶劑容易揮發之方面而言,較佳為使用初餾點(大氣壓下)為210℃以下之溶劑。 In the above, in the first heating step, it is preferred to use a solvent having an initial boiling point (at atmospheric pressure) of 210 ° C or less.

於硬化性聚矽氧組合物所含有之硬化性聚矽氧為加成反應型聚矽氧之情形時,硬化性聚矽氧組合物中亦可進而含有觸媒(尤其是鉑族金屬系觸媒)、或反應抑制劑。 When the curable polyfluorene oxide contained in the curable polyoxynene composition is an addition reaction type polyoxane, the curable polyoxynoxy composition may further contain a catalyst (especially a platinum group metal contact). Medium), or a reaction inhibitor.

鉑族金屬系觸媒(矽氫化用鉑族金屬觸媒)係用以進行、促進上述有機烯基聚矽氧烷中之烯基、與上述有機氫聚矽氧烷中之氫原子之矽氫化反應之觸媒。作為鉑族金屬系觸媒,可列舉:鉑系、鈀系、銠系等觸媒,就經濟性、反應性之方面而言,尤佳為使用鉑系觸媒。 A platinum group metal catalyst (a platinum group metal catalyst for hydrogenation) is used to carry out and promote the hydrogenation of an alkenyl group in the above organic alkenyl polyoxyalkylene and a hydrogen atom in the above organic hydrogen polyoxyalkylene. Catalyst for reaction. Examples of the platinum group-based catalyst include platinum-based, palladium-based, and lanthanide-based catalysts. In terms of economy and reactivity, it is particularly preferable to use a platinum-based catalyst.

反應抑制劑(矽氫化用反應抑制劑)係抑制上述觸媒(尤其是鉑族金屬系觸媒)於常溫下之觸媒活性,而使硬化性聚矽氧組合物之使用壽命變長之所謂適用期延長劑(亦稱為延遲劑)。作為反應抑制劑,例如可列舉:各種有機氮化合物、有機磷化合物、乙炔系化合物、肟化合物、有機氯化合物等。尤佳為乙炔系化合物(例如乙炔醇類及乙炔醇之矽烷化物)。 The reaction inhibitor (reaction inhibitor for hydrazine hydrogenation) suppresses the catalytic activity of the above-mentioned catalyst (especially a platinum group metal catalyst) at normal temperature, and the life of the hardenable polyfluorene composition becomes long. Applicable period extender (also known as retarder). Examples of the reaction inhibitor include various organic nitrogen compounds, organic phosphorus compounds, acetylene compounds, hydrazine compounds, and organic chlorine compounds. It is especially preferred to be an acetylene compound (for example, a decyl alcohol and a decyl alcohol of an acetylene alcohol).

(步驟之順序) (order of steps)

於支持基板上塗佈上述硬化性聚矽氧組合物之方法並無特別限制,可採用公知之方法。例如作為塗佈方法,可列舉:噴塗法、模具塗佈法、旋轉塗佈法、浸漬塗佈法、輥塗法、棒式塗佈法、網版印刷法、凹版塗佈法等。可自上述方法中,視硬化性聚矽氧組合物之種類而適當進行選擇。 The method of applying the curable polyfluorene oxide composition on the support substrate is not particularly limited, and a known method can be employed. Examples of the coating method include a spray coating method, a die coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method. From the above methods, it can be appropriately selected depending on the kind of the curable polysiloxane composition.

再者,硬化性聚矽氧組合物層之厚度並無特別限制,以可獲得下述之具有較佳厚度之聚矽氧樹脂層之方式適當進行調整。 Further, the thickness of the layer of the curable polydecane oxide composition is not particularly limited, and may be appropriately adjusted so as to obtain a polyoxynitride resin layer having a preferable thickness as described below.

<搬入步驟> <Moving step>

搬入步驟S104係向加熱處理裝置內搬入附硬化性層之支持基板,並於加熱處理裝置內之支持銷上載置附硬化性層之支持基板之步驟。藉由實施本步驟,而如圖3所示般於加熱處理裝置30內之支持銷34之頂端(頂部)上載置附硬化性層之支持基板14。再者,支持銷34係支持附硬化性層之支持基板14中之支持基板10之背面(與有硬化性聚矽氧組合物層之側相反側之面)。 In the loading step S104, the support substrate having the curable layer is carried into the heat treatment device, and the support substrate on which the curable layer is placed is placed on the support pin in the heat treatment device. By carrying out this step, the support substrate 14 to which the curable layer is attached is placed on the top end (top) of the support pin 34 in the heat treatment device 30 as shown in FIG. Further, the support pin 34 supports the back surface of the support substrate 10 in the support substrate 14 with the curable layer (the side opposite to the side having the curable polyoxynitride composition layer).

以下,首先對本步驟中所使用之加熱處理裝置30進行詳述。 Hereinafter, the heat treatment apparatus 30 used in this step will be described in detail first.

圖3係表示本發明之加熱處理裝置30之一例之概略的剖面圖。加熱處理裝置30係用以實施於下述之第1加熱步驟S106中之加熱處理之裝置,係所謂預烘烤裝置。 Fig. 3 is a cross-sectional view showing an outline of an example of the heat treatment apparatus 30 of the present invention. The heat treatment device 30 is a device for performing heat treatment in the first heating step S106 described below, and is a so-called prebaking device.

加熱處理裝置30於加熱室32內包含支持附硬化性層之支持基板14之支持銷34、支持支持銷34之支持台36、及配置於附硬化性層之支持基板14之上部之板狀的加熱板38。 The heat treatment device 30 includes a support pin 34 for supporting the support substrate 14 with a curable layer, a support table 36 for supporting the support pin 34, and a plate shape disposed on the upper portion of the support substrate 14 with the curable layer in the heating chamber 32. The plate 38 is heated.

於圖3中,支持銷34僅圖示2根,但其根數並無特別限制。又,加熱處理裝置30具有未圖示之使加熱板38升降之升降機構,加熱板38於圖3中可上下移動。 In FIG. 3, only two support pins 34 are shown, but the number of the pins is not particularly limited. Further, the heat treatment device 30 has an elevating mechanism (not shown) for elevating and lowering the heating plate 38, and the heating plate 38 is vertically movable in Fig. 3 .

又,於加熱處理裝置30之上部設置有與排氣機構(未圖示)連接之排氣管40,自未圖示之氣體供給口向加熱處理裝置30內供給之空氣、 或自硬化性聚矽氧組合物層12揮發之溶劑等係自排氣管40被排出。進而,於加熱處理裝置30之側方設置有用以將附硬化性層之支持基板14搬入搬出之搬入出口42。 Further, an exhaust pipe 40 connected to an exhaust mechanism (not shown) is provided in an upper portion of the heat treatment device 30, and air supplied from the gas supply port (not shown) to the heat treatment device 30 is provided. The solvent or the like which is volatilized from the sclerosing polyoxygen composition layer 12 is discharged from the exhaust pipe 40. Further, a loading port 42 for loading and unloading the support substrate 14 with the curable layer on the side of the heat treatment device 30 is provided.

作為本步驟S104之程序,係經由搬入出口42而將附硬化性層之支持基板14搬入加熱處理裝置30內,並於支持銷34上載置附硬化性層之支持基板14。 In the procedure of the step S104, the support substrate 14 with the curable layer is carried into the heat treatment device 30 via the carry-in port 42, and the support substrate 14 to which the curable layer is placed is placed on the support pin 34.

<第1加熱步驟> <1st heating step>

第1加熱步驟S106係於附硬化性層之支持基板之硬化性聚矽氧組合物層上部配置加熱板,一面進行排氣一面於第1溫度以下的溫度對附硬化性層之支持基板進行加熱處理,而將殘留於硬化性聚矽氧組合物層之溶劑去除之步驟。本步驟S106係所謂預烘烤步驟,藉由實施本步驟S106,而可將殘留於硬化性聚矽氧組合物層中之溶劑去除,並且可藉由於適當溫度下進行加熱而使硬化性聚矽氧組合物表面平滑化。以上述方式實施預烘烤處理後,於下述之第2加熱步驟S112中實施後烘烤處理,藉此進一步去除殘留於所形成之聚矽氧樹脂層中之溶劑,藉此表面面狀變得更平坦,與玻璃基板之密接性更為提高。 In the first heating step S106, a heating plate is disposed on the upper portion of the curable polyoxynitride composition layer of the support substrate with the curable layer, and the support substrate having the curable layer is heated at a temperature equal to or lower than the first temperature while exhausting. The step of removing the solvent remaining in the layer of the hardenable polysiloxane composition is carried out. This step S106 is a so-called prebaking step. By performing the step S106, the solvent remaining in the layer of the curable polydecane oxide composition can be removed, and the curable polycondensation can be achieved by heating at a suitable temperature. The surface of the oxygen composition is smoothed. After performing the prebaking treatment in the above manner, the post-baking treatment is performed in the second heating step S112 described below, thereby further removing the solvent remaining in the formed polyoxynoxy resin layer, whereby the surface is changed. It is flatter and has better adhesion to the glass substrate.

於本步驟S106中,如圖3所示般於附硬化性層之支持基板14之上部配置加熱板38而實施加熱處理。再者,如圖3所示般,加熱板38係與硬化性聚矽氧組合物層12對向。 In the step S106, as shown in FIG. 3, the heating plate 38 is placed on the upper portion of the support substrate 14 to which the curable layer is attached, and heat treatment is performed. Further, as shown in FIG. 3, the heating plate 38 is opposed to the curable polyoxynitride composition layer 12.

加熱板38與硬化性聚矽氧組合物層12之距離並無特別限制,就有效率地將溶劑自硬化性聚矽氧組合物層12去除,並且抑制硬化性聚矽氧之分解之方面而言,較佳為30~120mm,更佳為60~90mm。 The distance between the heating plate 38 and the curable polyoxynitride composition layer 12 is not particularly limited, and the solvent is efficiently removed from the curable polyoxynitride composition layer 12, and the decomposition of the hardenable polyfluorene oxygen is suppressed. In other words, it is preferably 30 to 120 mm, more preferably 60 to 90 mm.

再者,於本步驟S106中,亦可一面使加熱板38與硬化性聚矽氧組合物層12之距離階段性地變化一面進行加熱處理。例如,亦可一面使加熱板38與硬化性聚矽氧組合物層12階段性地遠離,一面實施加熱處理。更具體而言,於加熱板38與硬化性聚矽氧組合物層12之間為距 離X之條件下進行加熱處理,繼而,亦可於較距離X使加熱板38與硬化性聚矽氧組合物層12更遠離之條件(加熱板38與硬化性聚矽氧組合物層12之距離Y>距離X)下再次實施加熱處理。 Further, in the step S106, the heat treatment may be performed while gradually changing the distance between the heating plate 38 and the curable polyoxynitride composition layer 12. For example, the heating plate 38 may be subjected to heat treatment while being gradually separated from the curable polyoxynitride composition layer 12. More specifically, the distance between the heating plate 38 and the curable polyoxynitride composition layer 12 is The heat treatment is carried out under the condition of X, and then the heating plate 38 and the hardenable polyoxynitride composition layer 12 may be further away from each other at a distance X (the heating plate 38 and the curable polyoxynitride composition layer 12). The heat treatment is again performed under the distance Y>distance X).

作為於本步驟S106中之加熱處理之條件,係根據所使用之溶劑或硬化性聚矽氧之種類而適當選擇最佳之條件,就溶劑之去除性更優異而硬化性聚矽氧組合物層之表面變得平坦,並且更為抑制硬化性聚矽氧之分解之方面而言,第1溫度較佳為溶劑之初餾點-30℃~溶劑之初餾點+30℃之範圍內。換言之,第1溫度較佳為滿足以下之關係式。 As a condition of the heat treatment in the step S106, the optimum conditions are appropriately selected depending on the type of the solvent or the curable polyfluorene to be used, and the solvent-removing polyoxynitride composition layer is more excellent in the solvent removal property. The surface is flat and the decomposition of the curable polyfluorene is further suppressed. The first temperature is preferably in the range of from -30 ° C of the initial boiling point of the solvent to the initial boiling point of the solvent + 30 ° C. In other words, the first temperature preferably satisfies the following relational expression.

式 溶劑之初餾點-30℃≦第1溫度≦溶劑之初餾點+30℃ The initial boiling point of the solvent is -30 ° C ≦ the first temperature ≦ the initial boiling point of the solvent + 30 ° C

再者,所謂溶劑之初餾點,意指依據JIS K0066(1992)而測得之值。JIS K0066(1992)之內容係作為參照而併入本文中。 Further, the initial boiling point of the solvent means a value measured in accordance with JIS K0066 (1992). The contents of JIS K0066 (1992) are incorporated herein by reference.

進而,作為第1加熱步驟中之第1溫度,就硬化性聚矽氧組合物層之表面變平坦,並且更為抑制硬化性聚矽氧之分解之方面而言,較佳為210℃以下。其中,就可更為抑制聚矽氧樹脂層之凝聚破壞之方面而言,較佳為150~210℃,更佳為180~205℃。 Furthermore, the first temperature in the first heating step is preferably 210 ° C or less in terms of flattening the surface of the curable polyfluorene oxide composition layer and further suppressing decomposition of the curable polyfluorene oxide. Among them, in terms of suppressing aggregation failure of the polyoxyxene resin layer, it is preferably 150 to 210 ° C, more preferably 180 to 205 ° C.

加熱時間並無特別限制,係根據所使用之溶劑或硬化性聚矽氧之種類而適當選擇最佳之條件,就殘留溶劑之去除性、及生產性之方面而言,較佳為1~5分鐘,更佳為2~3分鐘。 The heating time is not particularly limited, and the optimum conditions are appropriately selected depending on the type of the solvent to be used or the type of the curable polyfluorene oxide, and it is preferably 1 to 5 in terms of the removability of the residual solvent and the productivity. Minutes, preferably 2 to 3 minutes.

於本步驟S106中,一面實施排氣一面進行加熱處理。如圖3所示般於加熱處理裝置30內設置有排氣管40,於加熱處理時利用該排氣管40進行排氣。排氣量並無特別限制,就更有效率地將溶劑去除之方面而言,較佳為100L/min以上,更佳為900L/min以上。上限並無特別限制,就裝置之性能及經濟性之方面而言,較佳為2000L/min以下。 In the present step S106, heat treatment is performed while exhausting is performed. As shown in FIG. 3, an exhaust pipe 40 is provided in the heat treatment device 30, and is exhausted by the exhaust pipe 40 during the heat treatment. The amount of exhaust gas is not particularly limited, and is preferably 100 L/min or more, and more preferably 900 L/min or more in terms of more efficiently removing the solvent. The upper limit is not particularly limited, and is preferably 2000 L/min or less in terms of performance and economy of the device.

再者,關於上述排氣量,於將自排氣管40之排氣全開時設為100%之情形時,較佳為50%以上,更佳為75%以上,進而較佳為 100%。 In addition, when the amount of the exhaust gas is 100% when the exhaust gas from the exhaust pipe 40 is fully opened, it is preferably 50% or more, more preferably 75% or more, and further preferably 100%.

實施本步驟S106時,亦可自未圖示之氣體供給口供給氣體。藉由供給氣體,而可有效率地將加熱室32內之揮發溶劑去除。所供給之氣體之種類並無特別限制,可列舉:空氣、或氮氣等惰性氣體等。 When the step S106 is performed, the gas may be supplied from a gas supply port (not shown). The volatile solvent in the heating chamber 32 can be efficiently removed by supplying a gas. The type of the gas to be supplied is not particularly limited, and examples thereof include an inert gas such as air or nitrogen.

氣體之供給量並無特別限制,就更有效率地將溶劑去除之方面而言,較佳為100L/min以上,更佳為900L/min以上。上限並無特別限制,就裝置之性能及經濟性之方面而言,較佳為2000L/min以下。 The amount of supply of the gas is not particularly limited, and is more preferably 100 L/min or more, and more preferably 900 L/min or more in terms of more efficiently removing the solvent. The upper limit is not particularly limited, and is preferably 2000 L/min or less in terms of performance and economy of the device.

又,作為所供給之氣體,就硬化性聚矽氧組合物層中之殘留溶劑之去除性更優異之方面而言,較佳為加熱空氣。加熱空氣之溫度並無特別限制,就溶劑之去除性與硬化性聚矽氧組合物層之表面平滑性之方面而言,較佳為100~150℃。 Moreover, as the gas to be supplied, it is preferable to heat the air in terms of the removability of the residual solvent in the curable polyoxynitride composition layer. The temperature of the heated air is not particularly limited, and is preferably 100 to 150 ° C in terms of solvent removal property and surface smoothness of the curable polyoxynitride composition layer.

<移動步驟> <moving step>

移動步驟S108係上述第1加熱步驟S106後,使實施過加熱處理之硬化性聚矽氧組合物層與加熱板遠離之步驟。更具體而言,於圖3中,使加熱板38向箭頭之方向進行移動,藉此使硬化性聚矽氧組合物層12與加熱板38遠離而擴大兩者間之距離,從而擴展兩者之間之空間。藉由實施本步驟S108,而可使滯留於硬化性聚矽氧組合物層12與加熱板38之間之溶劑之濃度變薄,從而溶劑之去除性提高,並且可抑制溶劑再次向硬化性聚矽氧組合物層12上附著。 The moving step S108 is a step of separating the curable polyfluorinated composition layer subjected to the heat treatment from the heating plate after the first heating step S106. More specifically, in FIG. 3, the heating plate 38 is moved in the direction of the arrow, thereby moving the curable polyoxynitride composition layer 12 away from the heating plate 38 to expand the distance therebetween, thereby expanding both. The space between them. By performing the step S108, the concentration of the solvent remaining between the curable polydecane oxide composition layer 12 and the heating plate 38 can be made thin, so that the solvent removal property is improved, and the solvent can be suppressed from being hardened again. The layer of the oxygen-containing composition 12 is attached.

如上述般於加熱處理裝置30中包含未圖示之使加熱板38升降之升降機構,藉由該升降機構,而使加熱板38以遠離硬化性聚矽氧組合物層12之方式進行移動。 As described above, the heat treatment device 30 includes an elevating mechanism (not shown) for elevating and lowering the heating plate 38, and the elevating mechanism moves the heating plate 38 away from the curable polysilicon composition layer 12.

作為硬化性聚矽氧組合物層12與加熱板38所遠離之距離,較佳為自上述第1加熱步驟S106時之兩者之距離進一步隔開20mm以上,更佳為隔開40mm以上。上限並無特別限制,但就裝置上之尺寸之問題而言,通常大多為100mm以下。 The distance from the curable polysiloxane composition layer 12 and the heating plate 38 is preferably further separated by a distance of 20 mm or more from the first heating step S106, and more preferably 40 mm or more. The upper limit is not particularly limited, but in terms of the size of the device, it is usually 100 mm or less.

加熱板38之移動時間並無特別限制,就生產性之方面而言,較佳為5秒以內,更佳為3秒以內。 The moving time of the heating plate 38 is not particularly limited, and in terms of productivity, it is preferably within 5 seconds, more preferably within 3 seconds.

再者,於圖3之態樣中,加熱板38移動,從而硬化性聚矽氧組合物層12與加熱板38之間之距離擴大,但本步驟S108之程序並不限定於該態樣,亦可使包含硬化性聚矽氧組合物層12之附硬化性層之支持基板14移動而使兩者遠離。例如於支持銷為所謂頂起銷之情形時,亦可於第1加熱步驟S106後使支持附硬化性層之支持基板之頂起銷降下,而使硬化性聚矽氧組合物層與加熱板遠離。 Furthermore, in the aspect of FIG. 3, the heating plate 38 is moved, so that the distance between the hardened polyoxynitride composition layer 12 and the heating plate 38 is enlarged, but the procedure of this step S108 is not limited to this aspect. The support substrate 14 including the hardenable layer of the curable polyoxyn composition layer 12 may be moved to keep the two away. For example, when the support pin is a so-called jacking pin, the jacking pin of the support substrate supporting the hardenable layer may be lowered after the first heating step S106, and the hardenable polyoxynitride composition layer and the heating plate may be used. keep away.

<搬出步驟> <Moving out step>

搬出步驟S110係自加熱處理裝置將附硬化性層之支持基板搬出之步驟。 The carry-out step S110 is a step of carrying out the support substrate with the curable layer from the heat treatment device.

本步驟S110中,經由加熱處理裝置30之搬入出口42而將附硬化性層之支持基板14自加熱處理裝置30內搬出。即,打開搬入出口42,自加熱處理裝置30內回收附硬化性層之支持基板14。 In the step S110, the support substrate 14 with the curable layer is carried out from the heat treatment device 30 via the carry-in port 42 of the heat treatment device 30. That is, the carry-in port 42 is opened, and the support substrate 14 with the curable layer is recovered from the inside of the heat treatment apparatus 30.

<第2加熱步驟> <2nd heating step>

第2加熱步驟S112係於較上述第1溫度高之第2溫度下對上述搬出步驟S110中所回收之附硬化性層之支持基板進行加熱處理,而獲得聚矽氧樹脂層之步驟。本步驟S112係所謂後烘烤處理,藉由實施本步驟S112,而進一步去除硬化性聚矽氧組合物層中之溶劑,藉此硬化性聚矽氧之硬化進行而可獲得聚矽氧樹脂層。藉由實施本步驟,可獲得如圖2(B)所示般包含支持基板10與聚矽氧樹脂層16之附樹脂層之支持基板18。 The second heating step S112 is a step of obtaining a polysilicon oxide resin layer by heat-treating the support substrate of the curable layer recovered in the carry-out step S110 at a second temperature higher than the first temperature. In this step S112, a so-called post-baking treatment is carried out, and by performing the step S112, the solvent in the layer of the curable polyfluorene oxide composition is further removed, whereby the hardening of the poly-oxygen oxide is carried out to obtain a polyoxynitride resin layer. . By carrying out this step, the support substrate 18 including the resin-attached layer supporting the substrate 10 and the polyoxy-oxygen resin layer 16 as shown in Fig. 2(B) can be obtained.

本步驟S112中之加熱處理之方法並無特別限制,可使用烘箱等公知之加熱裝置。 The method of the heat treatment in the step S112 is not particularly limited, and a known heating device such as an oven can be used.

關於本步驟S112之加熱處理之溫度條件,係於較上述之第1加熱步驟S106之第1溫度高之溫度下實施加熱處理。第1溫度與第2溫度之 差並無特別限制,係根據所使用之硬化性聚矽氧或溶劑之種類而適當選擇最佳之條件,就更為抑制聚矽氧樹脂層之凝聚破壞之方面而言,較佳為10~100℃,更佳為30~70℃。 The temperature condition of the heat treatment in this step S112 is performed at a temperature higher than the first temperature of the first heating step S106 described above. First temperature and second temperature The difference is not particularly limited, and the optimum conditions are appropriately selected depending on the type of the hardening polysiloxane or the solvent to be used, and the aggregation failure of the polyoxyxene resin layer is further suppressed. 100 ° C, more preferably 30 to 70 ° C.

其中,作為第2溫度,較佳為超過210℃。就自硬化性聚矽氧組合物層12中之溶劑去除、及硬化反應更優異之方面而言,較佳為超過210℃且為250℃以下。加熱時間係根據所使用之材料而適當選擇最佳之條件,就生產性及溶劑之去除性之方面而言,較佳為10~120分鐘,更佳為20~60分鐘。 Among them, the second temperature is preferably more than 210 °C. The solvent removal and the hardening reaction in the self-hardening polysiloxane composition layer 12 are preferably more than 210 ° C and not more than 250 ° C. The heating time is appropriately selected depending on the materials to be used, and is preferably from 10 to 120 minutes, more preferably from 20 to 60 minutes, in terms of productivity and solvent removal.

(附樹脂層之支持基板) (Support substrate with resin layer)

藉由經過上述步驟,而可獲得包含支持基板10、與固定於支持基板10上之聚矽氧樹脂層16的附樹脂層之支持基板18。 By the above steps, the support substrate 18 including the support substrate 10 and the resin layer attached to the polyoxyalkylene resin layer 16 fixed on the support substrate 10 can be obtained.

該附樹脂層之支持基板18係用以如圖4所示般於聚矽氧樹脂層16上積層玻璃基板20而製造玻璃積層體100。 The support substrate 18 with the resin layer is used to laminate the glass substrate 20 on the polyoxynitride layer 16 as shown in FIG. 4 to produce the glass laminate 100.

附樹脂層之支持基板18中之聚矽氧樹脂層16係藉由於支持基板10上實施硬化性聚矽氧組合物層12之硬化反應而被固定於支持基板10之單面上,又,以可剝離之方式與下述之玻璃基板20進行密接。聚矽氧樹脂層16係防止玻璃基板20之錯位直至進行將玻璃基板20與支持基板10進行分離之操作,並且防止由於分離操作而容易地自玻璃基板20剝離,玻璃基板20等由於分離操作而破損。又,聚矽氧樹脂層16係被固定於支持基板10,於分離操作中未使聚矽氧樹脂層16與支持基板10剝離,可藉由分離操作而獲得附樹脂層之支持基板18。 The polyoxynoxy resin layer 16 in the support substrate 18 with the resin layer is fixed to one side of the support substrate 10 by the hardening reaction of the curable polyoxynitride composition layer 12 on the support substrate 10, The detachable method is in close contact with the glass substrate 20 described below. The polyoxygenated resin layer 16 prevents the misalignment of the glass substrate 20 until the operation of separating the glass substrate 20 from the support substrate 10 is performed, and is prevented from being easily peeled off from the glass substrate 20 due to the separation operation, and the glass substrate 20 or the like is separated by the operation. damaged. Further, the polyoxyxene resin layer 16 is fixed to the support substrate 10, and the polyoxynitride resin layer 16 is not peeled off from the support substrate 10 during the separation operation, and the support substrate 18 with the resin layer can be obtained by a separation operation.

聚矽氧樹脂層16之與玻璃基板20接觸之表面係以可剝離之方式密接於玻璃基板20之第1主面。本發明中,將該聚矽氧樹脂層16表面之可容易剝離之性質稱為易剝離性(剝離性)。 The surface of the polyoxyxene resin layer 16 that is in contact with the glass substrate 20 is detachably adhered to the first main surface of the glass substrate 20. In the present invention, the property of easily peeling off the surface of the polyoxyalkylene resin layer 16 is referred to as easy peelability (peelability).

於本發明中,對於上述固定與可剝離之密接而言,剝離強度(即,剝離所需要之應力)存在差異,固定意指相對於密接,剝離強度 較大。又,所謂可剝離之密接,亦意指於可剝離之同時,於不產生所固定之面之剝離之情況下可剝離。具體而言,於本發明之玻璃積層體中,進行將玻璃基板20與支持基板10進行分離之操作之情形時,意指於密接之面剝離,於固定之面未剝離之情況。因此,於玻璃積層體中,若進行將玻璃基板20與支持基板10進行分離之操作,則玻璃積層體被分成玻璃基板20與附樹脂層之支持基板18兩者。 In the present invention, there is a difference in the peel strength (that is, the stress required for peeling) for the above-mentioned fixed and peelable close contact, and the fixed means the peel strength with respect to the close contact. Larger. Further, the term "peelable" means that it can be peeled off and peeled off without causing peeling of the surface to be fixed. Specifically, in the case where the glass substrate 20 and the support substrate 10 are separated from each other in the glass laminate of the present invention, it means that the surface to be adhered is peeled off, and the surface to be fixed is not peeled off. Therefore, in the operation of separating the glass substrate 20 and the support substrate 10 in the glass laminate, the glass laminate is divided into both the glass substrate 20 and the support substrate 18 with the resin layer.

即,聚矽氧樹脂層16對支持基板10之表面之結合力相對高於聚矽氧樹脂層16對玻璃基板20之第1主面的結合力。 That is, the bonding strength of the polyoxyxylene resin layer 16 to the surface of the support substrate 10 is relatively higher than the bonding strength of the polyoxynoxy resin layer 16 to the first main surface of the glass substrate 20.

聚矽氧樹脂層16之厚度並無特別限定,較佳為2~100μm,更佳為3~50μm,進而較佳為7~20μm。若聚矽氧樹脂層16之厚度為上述範圍,則即便於聚矽氧樹脂層16與玻璃基板20之間存在氣泡或異物,亦可抑制玻璃基板20之變形缺陷之產生。又,若聚矽氧樹脂層16之厚度過厚,則有因形成需要時間及材料,故而不經濟,且耐熱性降低之情形。又,若聚矽氧樹脂層16之厚度過薄,則有聚矽氧樹脂層16與玻璃基板20之密接性降低之情形。 The thickness of the polyoxyxene resin layer 16 is not particularly limited, but is preferably 2 to 100 μm, more preferably 3 to 50 μm, still more preferably 7 to 20 μm. When the thickness of the polyoxyxene resin layer 16 is in the above range, even if air bubbles or foreign matter are present between the polyoxynoxy resin layer 16 and the glass substrate 20, the occurrence of deformation defects of the glass substrate 20 can be suppressed. Further, when the thickness of the polyoxyxene resin layer 16 is too thick, it takes time and material to form, which is uneconomical and the heat resistance is lowered. Further, when the thickness of the polyoxyxene resin layer 16 is too small, the adhesion between the polyoxynated resin layer 16 and the glass substrate 20 may be lowered.

<玻璃積層體之製造方法> <Method of Manufacturing Glass Laminate>

如上所述,經過上述步驟而獲得之附樹脂層之支持基板係用以於聚矽氧樹脂層上積層玻璃基板而製造玻璃積層體。 As described above, the support substrate with the resin layer obtained through the above steps is used to laminate a glass substrate on the polyoxynitride layer to produce a glass laminate.

製造該玻璃積層體之方法並無特別限制,較佳為實施如下積層步驟,即於附樹脂層之支持基板中之聚矽氧樹脂層上積層玻璃基板,而獲得依序具有支持基板、聚矽氧樹脂層、及玻璃基板之玻璃積層體。 The method for producing the glass laminate is not particularly limited, and it is preferable to carry out a lamination step of laminating a glass substrate on the polyoxyalkylene resin layer in the support substrate with the resin layer, thereby obtaining a support substrate and a polylayer in sequence. An oxygen resin layer and a glass laminate of a glass substrate.

以下,對積層步驟之程序進行詳述。 Hereinafter, the procedure of the lamination step will be described in detail.

(積層步驟) (layering step)

積層步驟係於附樹脂層之支持基板18中之聚矽氧樹脂層16之表面上積層玻璃基板20,而獲得依序包含支持基板10、聚矽氧樹脂層 16、及玻璃基板20之玻璃積層體100的步驟。更具體而言,如圖4所示般將聚矽氧樹脂層16之與支持基板10側相反側之表面16a、與具有第1主面20a及第2主面20b之玻璃基板20之第1主面20a設為積層面,將聚矽氧樹脂層16與玻璃基板20進行積層而獲得玻璃積層體100。 The lamination step is to laminate the glass substrate 20 on the surface of the polyoxynoxy resin layer 16 in the support substrate 18 with the resin layer, and to obtain the support substrate 10 and the polyoxymethylene resin layer in this order. 16. The step of the glass laminate 100 of the glass substrate 20. More specifically, as shown in FIG. 4, the surface 16a of the polyoxy-oxygen resin layer 16 on the side opposite to the support substrate 10 side and the first glass substrate 20 having the first main surface 20a and the second main surface 20b are the first. The main surface 20a is an accumulation layer, and the polysilicon oxide resin layer 16 and the glass substrate 20 are laminated to obtain a glass laminate 100.

針對所使用之玻璃基板20,於下文進行詳述。 The glass substrate 20 to be used will be described in detail below.

將玻璃基板20積層於聚矽氧樹脂層16上之方法並無特別限制,可採用公知之方法。 The method of laminating the glass substrate 20 on the polyoxynoxy resin layer 16 is not particularly limited, and a known method can be employed.

例如,可列舉於常壓環境下於聚矽氧樹脂層16之表面上重疊玻璃基板20之方法。再者,亦可視需要,於聚矽氧樹脂層16之表面上重疊玻璃基板20後,使用輥或加壓而使玻璃基板20壓接於聚矽氧樹脂層16。藉由利用輥或加壓之壓接,而相對容易去除混入聚矽氧樹脂層16與玻璃基板20之間之氣泡,故而較佳。 For example, a method of laminating the glass substrate 20 on the surface of the polyoxyxene resin layer 16 under a normal pressure environment can be cited. Further, if necessary, the glass substrate 20 is placed on the surface of the polyoxyxene resin layer 16, and then the glass substrate 20 is pressure-bonded to the polyoxyalkylene resin layer 16 by using a roll or pressurization. It is preferable to remove bubbles which are mixed between the polyoxynoxy resin layer 16 and the glass substrate 20 by pressure bonding by a roll or pressurization.

若藉由真空層壓法或真空加壓法而將聚矽氧樹脂層16與玻璃基板20進行壓接,則抑制氣泡之混入或確保良好之密接,故而更佳。亦有如下優點,即藉由於真空下進行壓接,即便於殘留有微小之氣泡之情形時,亦無因加熱而使氣泡成長之情況,而難以導致玻璃基板20之變形缺陷。 When the polyoxyxylene resin layer 16 and the glass substrate 20 are pressure-bonded by a vacuum lamination method or a vacuum press method, it is more preferable to suppress the incorporation of air bubbles or to ensure good adhesion. There is also an advantage that even when fine bubbles remain in the vacuum bonding, the bubbles are not grown by heating, and deformation defects of the glass substrate 20 are hard to occur.

於積層玻璃基板20時,較佳為將與聚矽氧樹脂層16接觸之玻璃基板20之表面充分洗淨,而於潔淨度較高之環境下進行積層。潔淨度越高,玻璃基板20之平坦性變得越良好,故而較佳。 In the case of laminating the glass substrate 20, it is preferable to sufficiently wash the surface of the glass substrate 20 which is in contact with the polyoxynoxy resin layer 16, and to laminate it in an environment having a high degree of cleanliness. The higher the degree of cleanliness, the better the flatness of the glass substrate 20 becomes, which is preferable.

再者,積層玻璃基板20後,亦可視需要進行預退火處理(加熱處理)。藉由進行該預退火處理,從而積層之玻璃基板20之對聚矽氧樹脂層16之密接性提高,可成為適當之剝離強度,而於下述之構件形成步驟時變得難以產生電子裝置用構件之錯位等,而電子裝置之生產性提高。 Further, after the laminated glass substrate 20 is laminated, a pre-annealing treatment (heat treatment) may be performed as needed. By performing the pre-annealing treatment, the adhesion of the laminated glass substrate 20 to the polyoxynoxy resin layer 16 is improved, and the peel strength can be suitably obtained, and it becomes difficult to produce an electronic device in the member forming step described below. The dislocation of the components, etc., and the productivity of the electronic device is improved.

預退火處理之條件係視所使用之聚矽氧樹脂層16之種類而適當 選擇最佳之條件,就使玻璃基板20與聚矽氧樹脂層16之間之剝離強度變得更適當之方面而言,較佳為於300℃以上(較佳為300~400℃)之溫度下進行5分鐘以上(較佳為5~30分鐘)加熱處理。 The conditions of the pre-annealing treatment are appropriate depending on the type of the polyoxyxene resin layer 16 to be used. The optimum conditions are selected so that the peeling strength between the glass substrate 20 and the polyoxyxene resin layer 16 is more appropriate, preferably at a temperature of 300 ° C or higher (preferably 300 to 400 ° C). The heat treatment is carried out for 5 minutes or more (preferably 5 to 30 minutes).

(玻璃基板) (glass substrate)

玻璃基板20係其第1主面20a與聚矽氧樹脂層16接觸,且於其與聚矽氧樹脂層16側相反側之第2主面20b設置有電子裝置用構件。 In the glass substrate 20, the first main surface 20a is in contact with the polyoxynitride resin layer 16, and the second main surface 20b on the side opposite to the polyoxynitride resin layer 16 side is provided with an electronic device member.

玻璃基板20之種類可為通常者,例如可列舉LCD(liquid crystal display,液晶顯示裝置)、OLED(Organic Light-Emitting Diode,有機發光二極體)等顯示裝置用之玻璃基板等。玻璃基板20之耐化學品性、耐透濕性優異,且熱收縮率較低。作為熱收縮率之指標,可使用JIS R 3102(1995年修正)所規定之線膨脹係數。JIS R 3102(1995年修正)之內容係作為參照被併入本文中。 The type of the glass substrate 20 may be a normal one, and examples thereof include a glass substrate for a display device such as an LCD (liquid crystal display) or an OLED (Organic Light-Emitting Diode). The glass substrate 20 is excellent in chemical resistance and moisture permeability, and has a low heat shrinkage rate. As an index of the heat shrinkage rate, the linear expansion coefficient prescribed in JIS R 3102 (1995 Revision) can be used. The contents of JIS R 3102 (amended in 1995) are incorporated herein by reference.

若玻璃基板20之線膨脹係數較大,則因下述之構件形成步驟大多伴隨著加熱處理,故容易產生各種問題。例如於玻璃基板20上形成薄膜電晶體(TFT)之情形時,若於加熱下將形成有TFT之玻璃基板20進行冷卻,則有因玻璃基板20之熱收縮而導致TFT之錯位變得過大之虞。 When the linear expansion coefficient of the glass substrate 20 is large, since the member forming step described below is often accompanied by heat treatment, various problems are likely to occur. For example, when a thin film transistor (TFT) is formed on the glass substrate 20, if the glass substrate 20 on which the TFT is formed is cooled under heating, the misalignment of the TFT becomes excessive due to thermal contraction of the glass substrate 20. Hey.

玻璃基板20係使玻璃原料熔融並將熔融玻璃成形為板狀而獲得。此種成形方法可為通常者,例如可使用浮式法、熔融法、流孔下引法、富可法、魯伯法等。又,尤其是厚度較薄之玻璃基板20可利用將暫時成形為板狀之玻璃加熱至可成形之溫度,利用延伸等方法進行拉伸而使玻璃變薄之方法(再曳引法)進行成形而獲得。 The glass substrate 20 is obtained by melting a glass raw material and shaping the molten glass into a plate shape. Such a molding method may be a usual one, and for example, a float method, a melting method, a flow down method, a rich method, a Luber method, or the like may be used. Further, in particular, the glass substrate 20 having a small thickness can be formed by heating a glass which is temporarily formed into a plate shape to a temperature at which it can be formed, and stretching by a method such as stretching to thin the glass (re-drawing method). And get.

玻璃基板20之玻璃之種類並無特別限定,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、其他以氧化矽為主要成分之氧化物系玻璃。作為氧化物系玻璃,較佳為利用氧化物換算之氧化矽之含量為40~90質量%之玻璃。 The type of the glass of the glass substrate 20 is not particularly limited, and is preferably an alkali-free borosilicate glass, a borosilicate glass, a soda lime glass, a high cerium oxide glass, or another oxide-based glass containing cerium oxide as a main component. The oxide-based glass is preferably a glass having a content of cerium oxide in an amount of 40 to 90% by mass in terms of oxide.

作為玻璃基板20之玻璃,係採用適合電子裝置用構件之種類或其製造步驟之玻璃。例如液晶面板用之玻璃基板因鹼金屬成分之溶出容易對液晶產生影響,故由實質上不含有鹼金屬成分之玻璃(無鹼玻璃)(其中,包括通常鹼土金屬成分)構成。如上所述,玻璃基板20之玻璃係基於所適用之裝置之種類及其製造步驟而適當選擇。 As the glass of the glass substrate 20, a glass suitable for the type of the member for an electronic device or a manufacturing step thereof is used. For example, a glass substrate for a liquid crystal panel is likely to have an influence on liquid crystals due to elution of an alkali metal component, and therefore is composed of glass (alkali-free glass) containing substantially no alkali metal component (including a normal alkaline earth metal component). As described above, the glass of the glass substrate 20 is appropriately selected depending on the type of the apparatus to be applied and the manufacturing steps thereof.

關於玻璃基板20之厚度,就玻璃基板20之薄型化及/或輕量化之觀點而言,較佳為0.3mm以下,更佳為0.15mm以下,進而較佳為0.10mm以下。於玻璃基板20之厚度為0.3mm以下之情形時,可向玻璃基板20賦予良好之可撓性。於玻璃基板20之厚度為0.15mm以下之情形時,可將玻璃基板20捲取成輥狀。 The thickness of the glass substrate 20 is preferably 0.3 mm or less, more preferably 0.15 mm or less, and still more preferably 0.10 mm or less from the viewpoint of thickness reduction and/or weight reduction of the glass substrate 20. When the thickness of the glass substrate 20 is 0.3 mm or less, the glass substrate 20 can be provided with good flexibility. When the thickness of the glass substrate 20 is 0.15 mm or less, the glass substrate 20 can be wound into a roll shape.

又,就玻璃基板20之製造容易,及玻璃基板20之操作容易等理由而言,玻璃基板20之厚度較佳為0.03mm以上。 Moreover, the thickness of the glass substrate 20 is preferably 0.03 mm or more for the reason that the production of the glass substrate 20 is easy and the operation of the glass substrate 20 is easy.

再者,玻璃基板20亦可包含2層以上,於該情形時,形成各層之材料可為同種材料,亦可為異種材料。又,於該情形時,「玻璃基板20之厚度」意指全部層之合計之厚度。 Further, the glass substrate 20 may include two or more layers. In this case, the material forming each layer may be the same material or a different material. Moreover, in this case, "the thickness of the glass substrate 20" means the total thickness of all layers.

(玻璃積層體) (glass laminate)

玻璃積層體100係具有支持基板10、玻璃基板20及存在於該等之間之聚矽氧樹脂層16之積層體。聚矽氧樹脂層16係其一面與支持基板10接觸,並且其另一面與玻璃基板20之第1主面20a接觸。 The glass laminate 100 has a laminate of the support substrate 10, the glass substrate 20, and the polyoxynoxy resin layer 16 present between the layers. The polyoxyxene resin layer 16 is in contact with the support substrate 10 on one surface thereof, and the other surface thereof is in contact with the first main surface 20a of the glass substrate 20.

該玻璃積層體100係被使用至下述之構件形成步驟。即,該玻璃積層體100係被使用至於其玻璃基板20之第2主面20b表面上形成有液晶顯示裝置等電子裝置用構件為止。其後,形成有電子裝置用構件之玻璃積層體被分離為附樹脂層之支持基板18與電子裝置,附樹脂層之支持基板18不會成為構成電子裝置之部分。可於附樹脂層之支持基板18積層新的玻璃基板20而作為新的玻璃積層體100進行再利用。 This glass laminate 100 is used in the member forming step described below. In other words, the glass laminate 100 is used until a member for an electronic device such as a liquid crystal display device is formed on the surface of the second main surface 20b of the glass substrate 20. Thereafter, the glass laminate in which the member for electronic device is formed is separated into the support substrate 18 with the resin layer and the electronic device, and the support substrate 18 with the resin layer does not become a part constituting the electronic device. A new glass substrate 20 can be laminated on the support substrate 18 with the resin layer to be reused as a new glass laminate 100.

支持基板10與聚矽氧樹脂層16之界面具有剝離強度(x),若向支 持基板10與聚矽氧樹脂層16之界面施加超過剝離強度(x)之剝離方向之應力,則於支持基板10與聚矽氧樹脂層16之界面產生剝離。聚矽氧樹脂層16與玻璃基板20之界面具有剝離強度(y),若向聚矽氧樹脂層16與玻璃基板20之界面施加超過剝離強度(y)之剝離方向之應力,則於聚矽氧樹脂層16與玻璃基板20之界面產生剝離。 The interface between the support substrate 10 and the polyoxyxene resin layer 16 has a peel strength (x), if When the stress in the peeling direction exceeding the peel strength (x) is applied to the interface between the substrate 10 and the polyoxynoxy resin layer 16, peeling occurs at the interface between the support substrate 10 and the polyoxyxene resin layer 16. The interface between the polyoxyxene resin layer 16 and the glass substrate 20 has a peeling strength (y). When a stress exceeding the peeling strength (y) in the peeling direction is applied to the interface between the polyoxynoxy resin layer 16 and the glass substrate 20, Peeling occurs at the interface between the oxygen resin layer 16 and the glass substrate 20.

如上所述,於玻璃積層體100(亦意指下述之附電子裝置用構件之積層體)中,上述剝離強度(x)大於(高於)上述剝離強度(y)。因此,若向玻璃積層體100施加將支持基板10與玻璃基板20進行剝離之方向之應力,則玻璃積層體100係於聚矽氧樹脂層16與玻璃基板20之界面產生剝離而分離為玻璃基板20與附樹脂層之支持基板18。 As described above, in the glass laminate 100 (also referred to as a laminate of the member for electronic devices described below), the peel strength (x) is greater than (higher than) the peel strength (y). Therefore, when a stress in a direction in which the support substrate 10 and the glass substrate 20 are peeled off is applied to the glass laminate 100, the glass laminate 100 is peeled off at the interface between the polyoxynitride resin layer 16 and the glass substrate 20 to be separated into a glass substrate. 20 and a support substrate 18 with a resin layer.

即,聚矽氧樹脂層16係被固定於支持基板10上而形成附樹脂層之支持基板18,玻璃基板20以可剝離之方式密接於聚矽氧樹脂層16上。 That is, the polyoxyxene resin layer 16 is fixed to the support substrate 10 to form a support substrate 18 with a resin layer, and the glass substrate 20 is detachably adhered to the polyoxynoxy resin layer 16.

剝離強度(x)較佳為充分高於剝離強度(y)。提高剝離強度(x)意指可提高聚矽氧樹脂層16對支持基板10之附著力,且可維持於加熱處理後對玻璃基板20之相對較高之附著力。 The peel strength (x) is preferably sufficiently higher than the peel strength (y). Increasing the peel strength (x) means that the adhesion of the silicone resin layer 16 to the support substrate 10 can be improved, and the relatively high adhesion to the glass substrate 20 after the heat treatment can be maintained.

聚矽氧樹脂層16對支持基板10之附著力之提高係藉由如下方式達成,即如上述般使硬化性聚矽氧組合物層12於支持基板10上進行交聯硬化而形成聚矽氧樹脂層16。可利用交聯硬化時之接著力形成以較高之結合力結合於支持基板10之聚矽氧樹脂層16。 The improvement of the adhesion of the polyoxyxene resin layer 16 to the support substrate 10 is achieved by forming the curable polyoxyxene composition layer 12 on the support substrate 10 to form a polyfluorinated oxygen as described above. Resin layer 16. The polyoxynitride resin layer 16 bonded to the support substrate 10 with a high bonding force can be formed by the adhesion force at the time of cross-linking hardening.

另一方面,硬化性聚矽氧組合物層12之硬化物對玻璃基板20之結合力通常低於上述交聯硬化時所產生之結合力。 On the other hand, the bonding strength of the cured product of the curable polyoxynitride composition layer 12 to the glass substrate 20 is generally lower than that at the time of crosslinking hardening described above.

玻璃積層體100可用於各種用途,例如可列舉:製造下述之顯示裝置用面板、PV、薄膜2次電池、表面形成有電路之半導體晶圓等電子零件之用途等。再者,於該用途中,玻璃積層體100大多被暴露於高溫條件(例如360℃以上)下(例如1小時以上)。 The glass laminate 100 can be used for various purposes, and examples thereof include the use of a panel for a display device, a PV, a film secondary battery, and an electronic component such as a semiconductor wafer on which a circuit is formed. Further, in this application, the glass laminate 100 is often exposed to high temperature conditions (for example, 360 ° C or higher) (for example, 1 hour or longer).

此處,所謂顯示裝置用面板,包括LCD、OLED、電子紙、電漿顯示器面板、場發射面板、量子點LED面板、MEMS(Micro Electro Mechanical Systems,微電子機械系統)快門面板等。 Here, the panel for a display device includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.

<電子裝置(附構件之玻璃基板)及其製造方法> <Electronic device (glass substrate with attached members) and method of manufacturing the same>

本發明中,使用上述之玻璃積層體而製造包含玻璃基板與電子裝置用構件之電子裝置(附構件之玻璃基板)。 In the present invention, an electronic device (a glass substrate with a member) including a glass substrate and a member for an electronic device is produced by using the above-described glass laminate.

該電子裝置之製造方法並無特別限定,就電子裝置之生產性優異之方面而言,較佳為如下方法,即於上述玻璃積層體中之玻璃基板上形成電子裝置用構件而製造附電子裝置用構件之積層體,以聚矽氧樹脂層之玻璃基板側界面為剝離面,自所獲得之附電子裝置用構件之積層體分離為電子裝置與附樹脂層之支持基板。 The method of manufacturing the electronic device is not particularly limited, and in terms of excellent productivity of the electronic device, it is preferable to form an electronic device by forming a member for an electronic device on a glass substrate in the glass laminate. The laminated body of the member is separated into a supporting substrate of the electronic device and the resin-attached layer from the laminated body of the member for electronic device obtained by using the side surface of the glass substrate side of the polyoxyxene resin layer as a peeling surface.

以下,將於上述玻璃積層體中之玻璃基板上形成電子裝置用構件而製造附電子裝置用構件之積層體的步驟稱為構件形成步驟,將以聚矽氧樹脂層之玻璃基板側界面為剝離面,自附電子裝置用構件之積層體分離為電子裝置與附樹脂層之支持基板之步驟稱為分離步驟。 In the following, a step of forming a laminate for a member for an electronic device on a glass substrate in the glass laminate is referred to as a member forming step, and the glass substrate side interface of the polyoxyxene resin layer is peeled off. The step of separating the laminated body of the member for electronic device into the supporting substrate of the electronic device and the resin-attached layer is referred to as a separating step.

以下,針對各步驟中所使用之材料及程序進行詳述。 Hereinafter, the materials and procedures used in the respective steps will be described in detail.

(構件形成步驟) (component forming step)

構件形成步驟係於上述積層步驟中所獲得之玻璃積層體100中之玻璃基板20上形成電子裝置用構件之步驟。更具體而言,如圖5(A)所示般於玻璃基板20之第2主面20b(露出表面)上形成電子裝置用構件22而獲得附電子裝置用構件之積層體24。 The member forming step is a step of forming a member for an electronic device on the glass substrate 20 in the glass laminate 100 obtained in the above laminating step. More specifically, as shown in FIG. 5(A), the electronic device member 22 is formed on the second main surface 20b (exposed surface) of the glass substrate 20, and the laminated body 24 for the electronic device is obtained.

首先,針對本步驟中所使用之電子裝置用構件22進行詳述,其後對步驟之程序進行詳述。 First, the electronic device member 22 used in this step will be described in detail, and the procedure of the step will be described in detail later.

(電子裝置用構件(功能性元件)) (Mechanical components (functional components))

電子裝置用構件22係形成於玻璃積層體100中之玻璃基板20上,且係構成電子裝置之至少一部分之構件。更具體而言,作為電子裝置 用構件22,可列舉顯示裝置用面板、太陽電池、薄膜2次電池、或表面形成有電路之半導體晶圓等電子零件等所使用之構件(例如顯示裝置用構件、太陽電池用構件、薄膜2次電池用構件、電子零件用電路)。 The electronic device member 22 is formed on the glass substrate 20 in the glass laminate 100 and is a member constituting at least a part of the electronic device. More specifically, as an electronic device The member 22 is a member used for a display device panel, a solar cell, a thin film secondary battery, or an electronic component such as a semiconductor wafer on which a circuit is formed (for example, a member for a display device, a member for a solar cell, and a film 2). Sub-battery member, circuit for electronic parts).

例如,作為太陽電池用構件,就矽型而言,可列舉正極之氧化錫等透明電極、由p層/i層/n層表示之矽層、及負極之金屬等,除上述以外,亦可列舉對應於化合物型、色素增感型、量子點型等之各種構件等。 For example, as a member for a solar cell, a transparent electrode such as a tin oxide of a positive electrode, a tantalum layer represented by a p layer/i layer/n layer, a metal of a negative electrode, or the like may be used as the member for the solar cell, and the like. Various members and the like corresponding to a compound type, a dye-sensitized type, a quantum dot type, and the like are listed.

又,作為薄膜2次電池用構件,對於鋰離子型而言,可列舉正極及負極之金屬或金屬氧化物等透明電極、電解質層之鋰化合物、集電層之金屬、作為密封層之樹脂等,除上述以外,亦可列舉對應於鎳氫型、聚合物型、陶瓷電解質型等之各種構件等。 In addition, examples of the lithium ion type include a transparent electrode such as a metal or a metal oxide of a positive electrode and a negative electrode, a lithium compound of an electrolyte layer, a metal of a collector layer, a resin as a sealing layer, and the like. In addition to the above, various members such as a nickel-hydrogen type, a polymer type, and a ceramic electrolyte type may be mentioned.

又,作為電子零件用電路,對於CCD(Charge Coupled Device,電荷耦合元件)或CMOS(Complementary Metal Oxide Semiconductor,互補金氧半導體)而言,可列舉導電部之金屬、絕緣部之氧化矽或氮化矽等,除上述以外,亦可列舉對應於壓力感測器、加速度感測器等各種感測器或剛性印刷基板、軟性印刷基板、剛性軟性印刷基板等之各種構件等。 Further, as a circuit for an electronic component, a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) includes a metal of a conductive portion and yttrium oxide or nitridation of an insulating portion. In addition to the above, various members such as various sensors such as a pressure sensor and an acceleration sensor, or a rigid printed circuit board, a flexible printed circuit board, and a rigid flexible printed circuit board may be used.

(步驟之程序) (procedure of steps)

上述之附電子裝置用構件之積層體24之製造方法並無特別限定,視電子裝置用構件之構成構件之種類,利用先前公知之方法,於玻璃積層體100之玻璃基板20之第2主面20b上形成電子裝置用構件22。 The manufacturing method of the laminated body 24 of the member for electronic devices described above is not particularly limited, and the second main surface of the glass substrate 20 of the glass laminate 100 is formed by a conventionally known method depending on the type of the constituent members of the electronic device member. A member 22 for an electronic device is formed on 20b.

再者,電子裝置用構件22亦可並非最終形成於玻璃基板20之第2主面20b之構件之全部(以下稱為「全部構件」),而為全部構件之一部分(以下稱為「部分構件」)。亦可將自聚矽氧樹脂層16剝離之附部 分構件之玻璃基板於其後之步驟中製成附全部構件之玻璃基板(相當於下述之電子裝置)。 In addition, the electronic device member 22 may not be the entire member (hereinafter referred to as "all members") of the second main surface 20b of the glass substrate 20, and may be one part of all members (hereinafter referred to as "partial member" "). The part from which the polyoxynoxy resin layer 16 is peeled off may also be attached The glass substrate of the sub-members is formed into a glass substrate (corresponding to an electronic device described below) with all the members in the subsequent step.

又,對於自聚矽氧樹脂層16剝離之附全部構件之玻璃基板而言,亦可於其剝離面(第1主面20a)形成其他電子裝置用構件。又,亦可將附全部構件之積層體組合,其後自附全部構件之積層體將附樹脂層之支持基板18剝離而製造電子裝置。進而,亦可使用2片附全部構件之積層體而組裝電子裝置,其後自附全部構件之積層體將2片附樹脂層之支持基板18剝離,而製造具有2片玻璃基板之電子裝置。 Moreover, the glass substrate with all the members which are peeled off from the polyoxynoxy resin layer 16 may be formed with other electronic device members on the peeling surface (first main surface 20a). Moreover, the laminated body with all the members may be combined, and thereafter, the laminated body with the resin layer may be peeled off from the laminated body of all the members to manufacture an electronic device. Further, an electronic device can be assembled by using two laminated bodies with all the members, and then the laminated body with the resin layers removed from the laminated body of all the members, and an electronic device having two glass substrates can be manufactured.

例如,若以製造OLED之情形為例,則為了於玻璃積層體100之玻璃基板20之與聚矽氧樹脂層16側相反側之表面上(相當於玻璃基板20之第2主面20b)形成有機EL構造體,而進行如下各種層形成或處理,即形成透明電極;進而於形成有透明電極之面上蒸鍍電洞注入層‧電洞傳輸層‧發光層‧電子傳輸層等;形成背面電極;及使用密封板進行密封等。作為該等層形成或處理,具體而言,例如可列舉:成膜處理、蒸鍍處理、密封板之接著處理等。 For example, in the case of manufacturing an OLED, the surface of the glass substrate 20 of the glass laminate 100 on the side opposite to the side of the polyoxyxene resin layer 16 (corresponding to the second main surface 20b of the glass substrate 20) is formed. The organic EL structure is formed by forming or processing various layers to form a transparent electrode; and further depositing a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, etc. on the surface on which the transparent electrode is formed; Electrode; and sealing using a sealing plate. Specific examples of the formation or treatment of the layers include a film formation treatment, a vapor deposition treatment, and a subsequent treatment of a sealing plate.

又,例如於製造TFT-LCD之情形時,該製造方法具有TFT形成步驟、CF形成步驟、及貼合步驟等各種步驟,上述TFT形成步驟係於玻璃積層體100之玻璃基板20之第2主面20b上,使用抗蝕液,於藉由CVD(Chemical vapor deposition,化學氣相沈積)法及濺鍍法等通常之成膜法而形成之金屬膜及金屬氧化膜等進行圖案形成而形成薄膜電晶體(TFT);上述CF形成步驟係於另一玻璃積層體100之玻璃基板20之第2主面20b上,將抗蝕液用於圖案形成而形成彩色濾光片(CF);貼合步驟係將TFT形成步驟中所獲得之附TFT之積層體與CF形成步驟中所獲得之附CF之積層體進行積層。 Further, for example, in the case of manufacturing a TFT-LCD, the manufacturing method has various steps such as a TFT forming step, a CF forming step, and a bonding step, and the TFT forming step is applied to the second main member of the glass substrate 20 of the glass laminate 100. On the surface 20b, a metal film and a metal oxide film formed by a usual film formation method such as a CVD (Chemical Vapor Deposition) method or a sputtering method are used to form a film by using a resist liquid. a TFT (TFT); the CF forming step is performed on the second main surface 20b of the glass substrate 20 of the other glass laminate 100, and the resist liquid is used for pattern formation to form a color filter (CF); In the step, the laminated body of the TFT obtained in the TFT forming step and the laminated body of the CF obtained in the CF forming step are laminated.

於TFT形成步驟或CF形成步驟中,使用周知之光微影技術或蝕刻技術等而於玻璃基板20之第2主面20b形成TFT或CF。此時,可使用抗 蝕液作為圖案形成用之塗佈液。 In the TFT forming step or the CF forming step, TFT or CF is formed on the second main surface 20b of the glass substrate 20 by using a known photolithography technique or etching technique. At this point, you can use anti- The etching liquid is used as a coating liquid for pattern formation.

再者,於形成TFT或CF前,亦可視需要而將玻璃基板20之第2主面20b洗淨。作為洗淨方法,可使用周知之乾式洗淨或濕式洗淨。 Further, before forming the TFT or the CF, the second main surface 20b of the glass substrate 20 may be washed as needed. As the washing method, a dry cleaning or a wet washing which is well known can be used.

於貼合步驟中,使附TFT之積層體之薄膜電晶體形成面、與附CF之積層體之彩色濾光片形成面對向,並使用密封劑(例如,單元形成用紫外線硬化型密封劑)進行貼合。其後,向由附TFT之積層體與附CF之積層體所形成之單元內注入液晶材。作為注入液晶材之方法,例如有減壓注入法、滴加注入法。 In the bonding step, the thin film transistor forming surface of the laminated body with the TFT is formed to face the color filter of the laminated body with CF, and a sealing agent is used (for example, an ultraviolet curing type sealing agent for cell formation) ) to make a fit. Thereafter, a liquid crystal material is injected into a cell formed of a laminate body with TFTs and a laminate body with CF. As a method of injecting a liquid crystal material, for example, a pressure reduction injection method or a dropping injection method is available.

(分離步驟) (separation step)

分離步驟係如圖5(B)所示般,以聚矽氧樹脂層16與玻璃基板20之界面為剝離面,自上述構件形成步驟中所獲得之附電子裝置用構件之積層體24分離為積層有電子裝置用構件22之玻璃基板20(電子裝置)、與附樹脂層之支持基板18,而獲得包含電子裝置用構件22及玻璃基板20之電子裝置26的步驟。 In the separation step, as shown in FIG. 5(B), the interface between the polyoxyxene resin layer 16 and the glass substrate 20 is a peeling surface, and the laminated body 24 of the member for electronic device obtained in the above-described member forming step is separated into The glass substrate 20 (electronic device) of the electronic device member 22 and the support substrate 18 with the resin layer are laminated to obtain the electronic device 26 including the electronic device member 22 and the glass substrate 20.

於剝離時之玻璃基板20上之電子裝置用構件22為必需之全部構成構件之形成之一部分的情形時,亦可於分離後,將剩餘之構成構件形成於玻璃基板20上。 In the case where the electronic device member 22 on the glass substrate 20 at the time of peeling is a part of all necessary constituent members, the remaining constituent members may be formed on the glass substrate 20 after separation.

將玻璃基板20與附樹脂層之支持基板18進行剝離之方法並無特別限定。具體而言,例如可向玻璃基板20與聚矽氧樹脂層16之界面插入銳利之刃具狀者,賦予剝離之起點後,吹送水與壓縮空氣之混合流體而進行剝離。較佳為以附電子裝置用構件之積層體24之支持基板10成為上側,電子裝置用構件22側成為下側之方式設置於壓盤上,將電子裝置用構件22側真空吸附於壓盤上(於兩面積層有支持基板之情形時依序進行),於該狀態下首先使刃具侵入玻璃基板20-聚矽氧樹脂層16界面。然後,其後利用複數個真空吸附墊吸附支持基板10側,自插入刃具處附近開始依序使真空吸附墊上升。藉此於聚矽氧樹脂層16與 玻璃基板20之界面或聚矽氧樹脂層16之凝聚破壞面形成空氣層,該空氣層擴展至界面或凝聚破壞面之整面,而可容易地剝離支持基板10。 The method of peeling the glass substrate 20 and the support substrate 18 with a resin layer is not specifically limited. Specifically, for example, a sharp blade can be inserted into the interface between the glass substrate 20 and the polyoxyxene resin layer 16, and after the origin of the peeling is given, the mixed fluid of water and compressed air is blown and peeled off. It is preferable that the support substrate 10 of the laminated body 24 for the electronic device-attached member is placed on the upper side, the electronic device member 22 side is placed on the pressure plate, and the electronic device member 22 side is vacuum-adsorbed to the pressure plate. (In the case where the two-layer layer has a supporting substrate, it is sequentially performed), and in this state, the blade is first invaded into the interface of the glass substrate 20-polyoxyalkylene resin layer 16. Then, the support substrate 10 side is adsorbed by a plurality of vacuum adsorption pads, and the vacuum adsorption pad is sequentially raised from the vicinity of the insertion blade. Thereby using the polyoxyalkylene resin layer 16 The interface of the glass substrate 20 or the agglomerated fracture surface of the polyoxyxene resin layer 16 forms an air layer which spreads over the entire surface of the interface or the agglomerated fracture surface, and the support substrate 10 can be easily peeled off.

又,支持基板10可與新的玻璃基板進行積層而製造本發明之玻璃積層體100。 Further, the support substrate 10 can be laminated with a new glass substrate to produce the glass laminate 100 of the present invention.

再者,於自附電子裝置用構件之積層體24分離電子裝置26時,可藉由控制利用離子化器之吹送或濕度,而更為抑制聚矽氧樹脂層16之碎片靜電吸附於電子裝置26之情況。 Further, when the electronic device 26 is separated from the laminated body 24 of the self-contained electronic device member, it is possible to suppress the electrostatic adsorption of the fragments of the polyoxynoxy resin layer 16 to the electronic device by controlling the blowing or humidity by the ionizer. 26 cases.

上述之電子裝置26之製造方法較佳用於如行動電話或PDA(Personal Digital Assistant,個人數位助理)之移動終端所使用之小型顯示裝置之製造。顯示裝置主要有LCD或OLED,作為LCD,包括TN(Twisted Nematic,扭轉向列)型、STN(Super Twisted Nematic,超扭轉向列)型、FE(Ferroelectric,鐵電)型、TFT(Thin-film transistor,薄膜電晶體)型、MIM(Metal-Insulator-Metal,金屬-絕緣層-金屬)型、IPS(In-Plane Switching,橫向電場效應)型、VA(Vertical Aligned,垂直配向)型等。基本上於被動驅動型、主動驅動型中之任一種顯示裝置之情形時亦可應用。 The above-described manufacturing method of the electronic device 26 is preferably used for the manufacture of a small display device used by a mobile terminal such as a mobile phone or a PDA (Personal Digital Assistant). Display devices mainly include LCD or OLED, and as LCD, including TN (Twisted Nematic), STN (Super Twisted Nematic), FE (Ferroelectric), TFT (Thin-film) Transistor, thin film transistor type, MIM (Metal-Insulator-Metal), IPS (In-Plane Switching) type, VA (Vertical Aligned) type, and the like. It can also be applied basically in the case of any of the passive driving type and the active driving type.

作為利用上述方法製造之電子裝置26,可列舉:具有玻璃基板與顯示裝置用構件之顯示裝置用面板、具有玻璃基板與太陽電池用構件之太陽電池、具有玻璃基板與薄膜2次電池用構件之薄膜2次電池、具有玻璃基板與電子裝置用構件之電子零件等。作為顯示裝置用面板,包括液晶面板、有機EL面板、電漿顯示器面板、場發射面板等。 The electronic device 26 manufactured by the above method includes a panel for a display device having a member for a glass substrate and a display device, a solar cell having a member for a glass substrate and a solar cell, and a member for a glass substrate and a secondary battery. A film secondary battery, an electronic component having a glass substrate and a member for an electronic device, and the like. The panel for a display device includes a liquid crystal panel, an organic EL panel, a plasma display panel, a field emission panel, and the like.

[實施例] [Examples]

以下,藉由實施例等而對本發明具體地進行說明,但本發明並不受該等例限定。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited by the examples.

於以下之實施例及比較例中,使用由無鹼硼矽酸玻璃構成之玻璃板 (長度880mm、寬度680mm、板厚0.2mm,線膨脹係數38×10-7/℃,旭硝子公司製造,商品名「AN100」)作為玻璃基板。又,作為支持基板,使用相同之由無鹼硼矽酸玻璃構成之玻璃板(長度920mm、寬度730mm、板厚0.5mm,線膨脹係數38×10-7/℃,旭硝子公司製造,商品名「AN100」)。 In the following examples and comparative examples, a glass plate composed of an alkali-free borosilicate glass (length 880 mm, width 680 mm, thickness 0.2 mm, linear expansion coefficient 38×10 -7 /° C., manufactured by Asahi Glass Co., Ltd., was used. The name "AN100" is used as a glass substrate. Further, as the support substrate, the same glass plate (length 920 mm, width 730 mm, plate thickness 0.5 mm, linear expansion coefficient 38×10 -7 /° C., manufactured by Asahi Glass Co., Ltd., trade name) was used. AN100").

<實施例1> <Example 1>

首先,利用鹼性水溶液將支持基板之表面洗淨,之後利用純水洗淨而潔淨化。 First, the surface of the support substrate is washed with an alkaline aqueous solution, and then washed with pure water to be cleaned.

繼而,利用模具塗佈機(塗佈速度:40mm/s,吐出量:8ml),於支持基板之第1主面上塗佈下述之溶液S,將包含未硬化之交聯性有機聚矽氧烷之層(硬化性聚矽氧組合物層)設置於支持基板上,而獲得附硬化性層之支持基板(塗佈量20g/m2)。 Then, using a die coater (coating speed: 40 mm/s, discharge amount: 8 ml), the following solution S was applied to the first main surface of the support substrate to contain an unhardened crosslinkable organic polyfluorene. The layer of the oxyalkylene (hardenable polyoxynitride composition layer) was provided on the support substrate to obtain a support substrate (coating amount: 20 g/m 2 ) having a curable layer.

(溶液S) (solution S)

將作為成分(A)之直鏈狀乙烯基甲基聚矽氧烷(Azmax公司製造,商品名「VDT-127」,25℃下之黏度:700-800cP(厘泊),有機聚矽氧烷1mol中之乙烯基之mol%:0.325)、作為成分(B)之直鏈狀甲基氫聚矽氧烷(Azmax公司製造,商品名「HMS-301」,25℃下之黏度:25-35cP(厘泊),1分子內之鍵結於矽原子之氫原子之數量:8個)以全部乙烯基與鍵結於矽原子之全部氫原子的莫耳比(氫原子/乙烯基)成為0.9之方式進行混合,相對於該矽氧烷混合物100重量份,混合作為成分(C)之下述式(1)所示之具有乙炔系不飽和基之矽化合物(沸點:120℃)1質量份。 Linear linear methyl polysiloxane (component A), manufactured by Azmax Co., Ltd., trade name "VDT-127", viscosity at 25 ° C: 700-800 cP (centipoise), organic polyoxymethane The mol% of the vinyl group in 1 mol: 0.325), the linear methyl hydrogen polyoxyalkylene as the component (B) (manufactured by Azmax, trade name "HMS-301", viscosity at 25 ° C: 25-35 cP (centipoise), the number of hydrogen atoms bonded to the deuterium atom in one molecule: 8) The molar ratio (hydrogen atom/vinyl group) of all the hydrogen atoms bonded to all the hydrogen atoms of the deuterium atom becomes 0.9. In this manner, 1 part by mass of the oxime compound having an acetylene-based unsaturated group (boiling point: 120 ° C) represented by the following formula (1) as the component (C) is mixed with 100 parts by weight of the mixture of the oxirane. .

HC≡C-C(CH3)2-O-Si(CH3)3 式(1) HC≡CC(CH 3 ) 2 -O-Si(CH 3 ) 3 (1)

繼而,相對於成分(A)與成分(B)與成分(C)之合計量,以鉑換算計鉑金屬濃度成為100ppm之方式添加鉑系觸媒(Shin-Etsu Silicones股份有限公司製造,商品名「CAT-PL-56」)而獲得有機聚矽氧烷組合物 之混合液。進而,相對於所獲得之混合液100重量份,添加IP solvent 2028(初餾點:200℃,出光興產製造)150重量份而獲得混合溶液。 Then, a platinum-based catalyst (manufactured by Shin-Etsu Silicones Co., Ltd., trade name) was added to the total amount of the component (A) and the component (B) and the component (C) in a platinum equivalent of platinum. "CAT-PL-56") to obtain an organopolyoxane composition Mixture. Furthermore, 150 parts by weight of IP solvent 2028 (initial boiling point: 200 ° C, manufactured by Idemitsu Kosan Co., Ltd.) was added to 100 parts by weight of the obtained mixed liquid to obtain a mixed solution.

繼而,經由圖3所示之加熱處理裝置內之搬入出口,將附硬化性層之支持基板搬入加熱室內,於設置於加熱室之底部之複數個支持銷之頂端載置上述附硬化性層之支持基板並封閉搬入出口。再者,支持銷之頂端係與附硬化性層之支持基板中之支持基板之背面側(與有硬化性聚矽氧組合物層之側相反側)的表面接觸。 Then, the support substrate with the curable layer is carried into the heating chamber through the loading and unloading port in the heat treatment device shown in FIG. 3, and the curable layer is placed on the tip end of the plurality of support pins provided at the bottom of the heating chamber. Support the substrate and close the loading and exiting. Further, the tip end of the support pin is in contact with the surface of the back side of the support substrate (the side opposite to the side having the curable polyoxynitride composition layer) in the support substrate with the curable layer.

於加熱處理裝置內,如圖3所示般於附硬化性層之支持基板之硬化性聚矽氧組合物層之上部配置加熱板,且硬化性聚矽氧組合物層與加熱板之距離為70mm。 In the heat treatment apparatus, as shown in FIG. 3, a heating plate is disposed on the upper portion of the curable polyoxynitride composition layer of the support substrate with the curable layer, and the distance between the curable polyoxynitride composition layer and the heating plate is 70mm.

首先,藉由該加熱板,於200℃下歷時60秒鐘對附硬化性層之支持基板進行加熱,繼而將硬化性聚矽氧組合物與加熱板之距離變更為80mm,進而進行90秒鐘加熱。 First, the support substrate having the curable layer was heated at 200 ° C for 60 seconds by the heating plate, and then the distance between the curable polysiloxane composition and the heating plate was changed to 80 mm, and further, 90 seconds was performed. heating.

再者,加熱處理時,於960L/min之條件下進行排氣(自排氣管之排氣量相當於全開時),並且於1000L/min之條件下供給加熱空氣(溫度120℃)。 Further, at the time of heat treatment, the exhaust gas was exhausted under conditions of 960 L/min (the amount of exhaust gas from the exhaust pipe was equivalent to full opening), and heated air (temperature: 120 ° C) was supplied under conditions of 1000 L/min.

加熱處理結束後,使加熱板以遠離硬化性聚矽氧組合物層之方式移動50mm。其後,打開加熱處理裝置之搬入出口,將實施過加熱處理之附硬化性層之支持基板自加熱處理裝置內搬出。 After the end of the heat treatment, the hot plate was moved 50 mm away from the layer of the curable polyoxynitride composition. Thereafter, the loading/unloading port of the heat treatment device is opened, and the supporting substrate with the curable layer subjected to the heat treatment is carried out from the heat treatment device.

其後,將上述加熱處理後之附硬化性層之支持基板放入另一加熱處理裝置,進而於250℃下實施1450秒鐘之加熱處理(後烘烤處理),而於支持基板之第1主面形成厚度8μm之聚矽氧樹脂層。 Thereafter, the support substrate with the curable layer after the heat treatment is placed in another heat treatment device, and further subjected to a heat treatment (post-baking treatment) at 250 ° C for 1450 seconds, and the first substrate is supported. The main surface was formed into a polyoxynitride resin layer having a thickness of 8 μm.

繼而,於室溫下,藉由大氣壓加壓而將玻璃基板與支持基板上之聚矽氧樹脂層面進行貼合,而獲得玻璃積層體S1。 Then, the glass substrate and the polyoxymethylene resin layer on the support substrate are bonded together by atmospheric pressure at room temperature to obtain a glass laminate S1.

於所獲得之玻璃積層體S1中,支持基板與玻璃基板係於與聚矽氧樹脂層之間不產生氣泡之情況下進行密接,沒有變形缺陷,平滑性 亦良好。再者,於玻璃積層體S1中,聚矽氧樹脂層與支持基板之層之界面之剝離強度大於玻璃基板之層與聚矽氧樹脂層之界面的剝離強度。 In the obtained glass laminate S1, the support substrate and the glass substrate are adhered to each other without generating bubbles between the polyoxynated resin layers, and there is no deformation defect and smoothness. Also good. Further, in the glass laminate S1, the peeling strength at the interface between the layer of the polyimide layer and the layer of the support substrate is larger than the peel strength at the interface between the layer of the glass substrate and the layer of the polyimide resin layer.

<實施例2> <Example 2>

將加熱處理時之排氣量自960L/min變更為500L/min,將加熱空氣之供給量自1000L/min變更為600L/min,除此以外,依據與實施例1相同之程序而製造玻璃積層體S2。再者,於玻璃積層體S2中,聚矽氧樹脂層與支持基板之層之界面之剝離強度大於玻璃基板之層與聚矽氧樹脂層之界面的剝離強度。 The glass laminate was produced according to the same procedure as in Example 1 except that the amount of exhaust gas during the heat treatment was changed from 960 L/min to 500 L/min, and the supply amount of the heated air was changed from 1000 L/min to 600 L/min. Body S2. Further, in the glass laminate S2, the peel strength at the interface between the layer of the polyimide layer and the layer of the support substrate is larger than the peel strength at the interface between the layer of the glass substrate and the layer of the polyimide resin layer.

<比較例1> <Comparative Example 1>

加熱處理結束後,不使加熱板移動而將加熱處理後之附硬化性層之支持基板自加熱處理裝置搬出,除此以外,依據與實施例1相同之程序而製造玻璃積層體C。 After the completion of the heat treatment, the glass laminate C was produced in the same manner as in Example 1 except that the heat-receiving sheet was moved and the support substrate with the curable layer after the heat treatment was removed from the heat treatment apparatus.

<凝聚破壞評價> <Cohesive failure evaluation>

將上述實施例及比較例中所獲得之玻璃積層體切割成100mm×75mm,於氮氣氛圍下,以350℃進行60分鐘加熱處理。 The glass laminate obtained in the above Examples and Comparative Examples was cut into 100 mm × 75 mm, and heat-treated at 350 ° C for 60 minutes in a nitrogen atmosphere.

然後,將加熱處理後之玻璃積層體切割成25mm×75mm,向4處角隅部中之1處之玻璃基板與聚矽氧樹脂層之界面插入厚度0.1mm之不鏽鋼製刃具10mm而形成剝離之切口部,向將玻璃基板與支持基板彼此分離之方向施加外力,而將玻璃基板與支持基板分離。 Then, the glass laminate after the heat treatment was cut into 25 mm × 75 mm, and a stainless steel blade having a thickness of 0.1 mm was inserted into the interface between the glass substrate and the polyoxynoxy resin layer at one of the four corner portions to form a peeling. The notch portion applies an external force to a direction separating the glass substrate from the support substrate, and separates the glass substrate from the support substrate.

藉由目視,觀察所剝離之玻璃基板之與聚矽氧樹脂層接觸之評價對象表面(25mm×65mm),求出聚矽氧樹脂層之附著率(%){(附著於所剝離之玻璃基板上之聚矽氧樹脂層側之表面之聚矽氧樹脂層的面積/觀察面積)×100},並依據以下基準進行評價。附著率越大,表示聚矽氧樹脂層之一部分越凝聚破壞。 The surface of the evaluation object (25 mm × 65 mm) in contact with the polyoxyxylene resin layer of the peeled glass substrate was observed by visual observation, and the adhesion rate (%) of the polyoxynoxy resin layer was determined { (attached to the peeled glass substrate) The area/observation area of the polyoxyalkylene resin layer on the surface of the upper polyoxyethylene resin layer side was ×100}, and was evaluated based on the following criteria. The greater the adhesion rate, the more agglomerated and destroyed one part of the polyoxymethylene resin layer.

「○」:附著率未達5%之情形 "○": the case where the adhesion rate is less than 5%

「△」:附著率為5%以上且未達10%之情形 "△": the case where the adhesion rate is 5% or more and less than 10%

「×」:附著率為10%以上之情形 "X": the case where the adhesion rate is 10% or more

進行上述凝聚破壞評價時,於實施例1中為「○」之評價結果,於實施例2中為「△」之評價結果,於比較例1中為「×」之評價結果。 In the case of the evaluation of the aggregation failure, the evaluation result of "○" in the first embodiment was the evaluation result of "△" in the second embodiment, and the evaluation result of "x" in the comparative example 1.

自該結果確認如下情況:於未實施使加熱板與硬化性聚矽氧組合物層遠離之處理之比較例1中,聚矽氧樹脂層之凝聚破壞容易進行。 From the results, it was confirmed that in the comparative example 1 in which the treatment of the hot plate and the curable polyfluorene oxide composition layer was not carried out, the aggregation failure of the polyoxymethylene resin layer was easily performed.

再者,自實施例1與實施例2之結果確認,排氣量較多者更為抑制凝聚破壞。 Further, from the results of Example 1 and Example 2, it was confirmed that the amount of exhaust gas was more suppressed by aggregation failure.

<實施例3> <Example 3>

本例中,使用實施例1中所獲得之玻璃積層體S1而製造OLED In this example, an OLED was produced using the glass laminate S1 obtained in Example 1.

首先,於玻璃積層體S1之玻璃基板之第2主面上,藉由電漿CVD法而依序將氮化矽、氧化矽、非晶矽成膜。繼而,藉由離子摻雜裝置而將低濃度之硼注入非晶矽層,於氮氣氛圍下進行加熱處理而進行脫氫處理。繼而,藉由雷射退火裝置而進行非晶矽層之結晶化處理。繼而,藉由使用光微影法之蝕刻及離子摻雜裝置,將低濃度之磷注入非晶矽層而形成N型及P型之TFT區域。繼而,於玻璃基板之第2主面側,藉由電漿CVD法將氧化矽膜成膜而形成閘極絕緣膜後,藉由濺鍍法而將鉬成膜,藉由使用光微影法之蝕刻而形成閘極電極。繼而,藉由光微影法與離子摻雜裝置,將高濃度之硼與磷注入N型、P型各自之所需區域而形成源極區域及汲極區域。繼而,於玻璃基板之第2主面側,以利用電漿CVD法之氧化矽之成膜形成層間絕緣膜,且藉由利用濺鍍法之鋁之成膜及藉由使用光微影法之蝕刻而形成TFT電極。繼而,於氫環境下,進行加熱處理而進行氫化處理後,以利用電漿CVD法之氮化矽之成膜形成鈍化層。繼而,於玻璃基板之第2主面側塗佈 紫外線硬化性樹脂,藉由光微影法而形成平坦化層及接觸孔。繼而,藉由濺鍍法將氧化銦錫成膜,藉由使用光微影法之蝕刻而形成像素電極。 First, on the second main surface of the glass substrate of the glass laminate S1, tantalum nitride, ruthenium oxide, and amorphous ruthenium are sequentially formed by a plasma CVD method. Then, boron of a low concentration is injected into the amorphous germanium layer by an ion doping apparatus, and heat treatment is performed in a nitrogen atmosphere to carry out dehydrogenation treatment. Then, the crystallization treatment of the amorphous germanium layer is performed by a laser annealing device. Then, by using a photolithography etching and ion doping apparatus, a low concentration of phosphorus is implanted into the amorphous germanium layer to form N-type and P-type TFT regions. Then, on the second main surface side of the glass substrate, a ruthenium oxide film is formed by a plasma CVD method to form a gate insulating film, and then molybdenum is formed by sputtering to form a film by using a photolithography method. The etching is performed to form a gate electrode. Then, by using a photolithography method and an ion doping apparatus, a high concentration of boron and phosphorus is implanted into a desired region of each of the N-type and the P-type to form a source region and a drain region. Then, on the second main surface side of the glass substrate, an interlayer insulating film is formed by film formation of cerium oxide by a plasma CVD method, and film formation by aluminum by sputtering method and by photolithography are used. The TFT electrode is formed by etching. Then, after performing a hydrogenation treatment in a hydrogen atmosphere, a passivation layer is formed by film formation of tantalum nitride by a plasma CVD method. Then, coating on the second main surface side of the glass substrate The ultraviolet curable resin is formed into a planarization layer and a contact hole by photolithography. Then, indium tin oxide is formed into a film by sputtering, and a pixel electrode is formed by etching using photolithography.

繼而,於玻璃基板之第2主面側,藉由蒸鍍法,依序將作為電洞注入層之4,4',4"-三(3-甲基苯基苯基胺基)三苯胺、作為電洞傳輸層之雙[(N-萘基)-N-苯基]聯苯胺、作為發光層之於8-羥喹啉鋁錯合物(Alq3)中混合有2,6-雙[4-[N-(4-甲氧基苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二腈(BSN-BCN)40體積%者、及作為電子傳輸層之Alq3成膜。繼而,藉由濺鍍法將鋁成膜,藉由使用光微影法之蝕刻形成對向電極。繼而,於玻璃基板之第2主面側,隔著紫外線硬化型之接著層而貼合另一片玻璃基板而進行密封。藉由上述程序而於玻璃基板上形成有機EL構造體。玻璃基板上具有有機EL構造體之玻璃積層體A(以下,稱為面板A)為本發明之附電子裝置用構件之積層體。 Then, on the second main surface side of the glass substrate, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine as a hole injection layer was sequentially deposited by a vapor deposition method. , as a hole transport layer, bis[(N-naphthyl)-N-phenyl]benzidine, as a light-emitting layer in the 8-hydroxyquinoline aluminum complex (Alq 3 ) mixed with 2,6-double [4-[N-(4-Methoxyphenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN) 40% by volume, and as an electron transport layer The Alq 3 is formed into a film. Then, aluminum is formed into a film by a sputtering method, and a counter electrode is formed by etching using a photolithography method. Then, on the second main surface side of the glass substrate, an ultraviolet curing type is interposed. The other glass substrate is bonded to the other layer and sealed. The organic EL structure is formed on the glass substrate by the above procedure. The glass laminate A (hereinafter referred to as panel A) having the organic EL structure on the glass substrate is A laminate of the member for an electronic device of the present invention.

繼而,使面板A之密封體側真空吸附於壓盤後,向面板A之角隅部之玻璃基板與樹脂層之界面插入厚度0.1mm之不鏽鋼製刃具,而向玻璃基板與樹脂層之界面賦予剝離之起點。然後,利用真空吸附墊吸附面板A之支持基板第1主面後,使吸附墊上升。此處,刃具之插入係與自離子化器(KEYENCE公司製造)將除電性流體向上述玻璃基板與樹脂層之界面進行吹送一起進行。繼而,自離子化器繼續向所形成之空隙吹送除電性流體,並且將水注入剝離鋒面,同時提昇真空吸附墊。其結果為,於壓盤上僅殘留形成有有機EL構造體之玻璃基板,可將附樹脂層之支持基板剝離。 Then, after the sealing body side of the panel A is vacuum-adsorbed to the platen, a stainless steel blade having a thickness of 0.1 mm is inserted into the interface between the glass substrate and the resin layer at the corner of the panel A, and the interface between the glass substrate and the resin layer is imparted. The starting point of stripping. Then, the first main surface of the support substrate of the panel A is adsorbed by the vacuum adsorption pad, and then the adsorption pad is raised. Here, the insertion of the blade is performed by blowing an electrostatic fluid to the interface between the glass substrate and the resin layer from an ionizer (manufactured by KEYENCE Co., Ltd.). Then, the ionizer continues to blow the neutralizing fluid to the formed voids, and injects water into the stripping front while lifting the vacuum adsorbing pad. As a result, only the glass substrate on which the organic EL structure is formed remains on the platen, and the support substrate with the resin layer can be peeled off.

繼而,使用雷射裁刀或刻劃-斷裂法將被分離之玻璃基板進行切割,分割為複數個單元後,將形成有有機EL構造體之玻璃基板與對向基板組合,實施模組形成步驟而製作OLED。以上述方式獲得之OLED於特性上沒有問題。 Then, the separated glass substrate is cut by a laser cutting or scribing-breaking method, and divided into a plurality of units, and then the glass substrate on which the organic EL structure is formed is combined with the counter substrate, and the module forming step is performed. And making OLED. The OLED obtained in the above manner has no problem in characteristics.

已詳細且參照特定之實施態樣對本發明進行了說明,但對從業者而言很明確,可不脫離本發明之精神及範圍而添加各種變更或修正。 The present invention has been described in detail with reference to the specific embodiments thereof.

本申請案係基於2013年12月17日提出申請之日本專利申請2013-260253者,且將其內容作為參照併入本文中。 The present application is based on Japanese Patent Application No. 2013-260253, filed on Dec.

10‧‧‧支持基板 10‧‧‧Support substrate

12‧‧‧硬化性聚矽氧組合物層 12‧‧‧ hardened polysiloxane composition layer

14‧‧‧附硬化性層之支持基板 14‧‧‧Support substrate with hardened layer

30‧‧‧加熱處理裝置 30‧‧‧heat treatment unit

32‧‧‧加熱室 32‧‧‧heating room

34‧‧‧支持銷 34‧‧‧Support pins

36‧‧‧支持台 36‧‧‧Support Desk

38‧‧‧加熱板 38‧‧‧heating plate

40‧‧‧排氣管 40‧‧‧Exhaust pipe

42‧‧‧搬入出口 42‧‧‧ Moving into the exit

Claims (5)

一種附樹脂層之支持基板之製造方法,該附樹脂層之支持基板具有支持基板與設置於支持基板之單面之聚矽氧樹脂層,且用於在上述聚矽氧樹脂層上積層玻璃基板而製造玻璃積層體,該附樹脂層之支持基板之製造方法依序包含:塗佈步驟,其係將包含硬化性聚矽氧與溶劑之硬化性聚矽氧組合物塗佈於上述支持基板上,於上述支持基板上形成硬化性聚矽氧組合物層,而獲得包含上述支持基板及上述硬化性聚矽氧組合物層之附硬化性層之支持基板;搬入步驟,其係向加熱處理裝置內搬入上述附硬化性層之支持基板,並於上述加熱處理裝置內之支持銷上載置上述附硬化性層之支持基板;第1加熱步驟,其係於上述附硬化性層之支持基板之上述硬化性聚矽氧組合物層上部配置加熱板,一面進行排氣,一面於第1溫度以下的溫度對上述附硬化性層之支持基板進行加熱處理,而將殘留於上述硬化性聚矽氧組合物層之上述溶劑去除;移動步驟,其係於上述第1加熱步驟後,使上述實施過加熱處理之上述硬化性聚矽氧組合物層離開上述加熱板;搬出步驟,其係將上述附硬化性層之支持基板自上述加熱處理裝置搬出;及第2加熱步驟,其係於較上述第1溫度高之第2溫度下對上述附硬化性層之支持基板進行加熱處理,而獲得聚矽氧樹脂層。 A manufacturing method of a support substrate with a resin layer, the support substrate with a resin layer having a support substrate and a polyoxyalkylene resin layer provided on one side of the support substrate, and for laminating a glass substrate on the polysilicon oxide resin layer The method for producing a glass laminate, the support substrate for the resin layer, comprises a coating step of applying a curable polyoxynoxy composition containing a curable polyfluorene oxide and a solvent to the support substrate. Forming a hardenable polyoxynitride composition layer on the support substrate to obtain a support substrate having a curable layer comprising the support substrate and the curable polyoxynitride composition layer; and carrying the step to the heat treatment device Carrying the support substrate with the curable layer therein, and placing the support substrate with the curable layer on the support pin in the heat treatment device; the first heating step is performed on the support substrate of the curable layer A heating plate is disposed on the upper portion of the curable polyoxynitride composition layer, and the supporting substrate of the hardenable layer is placed at a temperature lower than the first temperature while exhausting. The heat treatment is performed to remove the solvent remaining in the curable polyoxynitride composition layer; and the moving step is performed after the first heating step to cause the hardened polysulfonate composition layer subjected to the heat treatment Leaving the heating plate; carrying out the step of carrying out the support substrate with the curable layer from the heat treatment device; and performing a second heating step for the hardening at the second temperature higher than the first temperature The support substrate of the layer is subjected to heat treatment to obtain a polyoxymethylene resin layer. 如請求項1之附樹脂層之支持基板之製造方法,其中上述硬化性聚矽氧包含具有烯基之有機烯基聚矽氧烷、及具有鍵結於矽原子之氫原子之有機氫聚矽氧烷。 The method for producing a support substrate with a resin layer according to claim 1, wherein the hardenable polyfluorene oxide comprises an organic alkenyl polyoxyalkylene having an alkenyl group, and an organic hydrogen polycondensation having a hydrogen atom bonded to a germanium atom. Oxytomane. 如請求項1或2之附樹脂層之支持基板之製造方法,其中上述第1溫度滿足上述溶劑之初餾點-30℃≦第1溫度≦上述溶劑之初餾點+30℃。 The method for producing a support substrate with a resin layer according to claim 1 or 2, wherein the first temperature satisfies an initial boiling point of the solvent of -30 ° C ≦ a first temperature 初 an initial boiling point of the solvent + 30 ° C. 一種玻璃積層體之製造方法,其具有積層步驟:於藉由如請求項1至3中任一項之製造方法製造之附樹脂層之支持基板中的上述聚矽氧樹脂層上積層玻璃基板,而獲得依序具有支持基板、聚矽氧樹脂層、及玻璃基板之玻璃積層體。 A method for producing a glass laminate having a lamination step of laminating a glass substrate on the polyoxyalkylene resin layer in a support substrate with a resin layer manufactured by the production method according to any one of claims 1 to 3, A glass laminate having a support substrate, a polyoxymethylene resin layer, and a glass substrate is obtained in this order. 一種電子裝置之製造方法,其包含:構件形成步驟,其係於藉由如請求項4之製造方法製造之玻璃積層體之上述玻璃基板之表面上形成電子裝置用構件,而獲得附電子裝置用構件之積層體;及分離步驟,其係自上述附電子裝置用構件之積層體去除上述附樹脂層之支持基板,而獲得具有上述玻璃基板與上述電子裝置用構件之電子裝置。 A method of manufacturing an electronic device, comprising: a member forming step of forming an electronic device member on a surface of the glass substrate of the glass laminate produced by the manufacturing method of claim 4, thereby obtaining an electronic device And a separation step of removing the support substrate with the resin layer from the laminate of the member for electronic device, and obtaining an electronic device having the glass substrate and the member for the electronic device.
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