NL1037068C2

NL1037068C2 - SEMICONDUCTOR SUBSTRATE TRANSFER / treatment-TUNNEL ESTABLISHMENT WHICH IN ITS OPERATION IN MULTIPLE STRIP SHAPE UP SPLIT-SECTIONS IT ABOVE THE SUCCESSIVE, UNINTERRUPTED BENEATH ALONG moving SEMICONDUCTOR SUBSTRATE-SECTIONS UNINTERRUPTED PLACE OF HEAT TREATMENT UNDER VIBRATION CONDITION OF IT IN THE PRECEDING PORTION THEREOF applied LAYER OF THE COMBINATION OF LIQUID CARRYING MEDIUM AND PARTICLES OF A SEMICONDUCTOR SUBSTANCE.

Info

Publication number: NL1037068C2
Application number: NL1037068A
Authority: NL
Inventors: Edward Bok
Original assignee: Edward Bok
Priority date: 2009-06-23
Filing date: 2009-06-23
Publication date: 2010-12-27

Description

Semiconductor substraat transfer/behandelings-tunnelopstelling, waarbij tijdens de werking ervan in meerdere stripvormige bovenspleet-gedeeltes ervan boven de opvolgende, ononderbroken eronderl3ngs verplaatsende 5 semiconductor substraat-gedeeltes het ononderbroken plaatsvinden van een warmte-behandeling onder trilconditie van de daarop in een voorgaand gedeelte ervan opgebrachte laag van de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie.Semiconductor substrate transfer / treatment tunnel arrangement, wherein during its operation in a plurality of strip-shaped upper slit portions thereof above the successive, continuously moving semiconductor substrate portions, the continuous occurrence of a heat treatment under the vibrating condition of the subsequently in a preceding portion thereof applied layer of the combination of liquid carrier medium and particles of a semiconductor substance.

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Semiconductor substraat transfer/behandelings-tunnelopstelling, waarin tenminste plaatselijk ter plaatse van het centrale boven-behandelingsgedeelte ervan de opname van een stripvormige boven-spleetsectie, welke zich 15 uitstrekt in dwarsrichting ervan boven de opvolgende, zich tijdens de werking ervan ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes en waarbij met behulp van een stripvormige opstelling, welke is opgenomen in het boventunnelblok, het daarmede 20 ononderbroken plaatsvinden van een warmte-behandelings-proces onder trilconditie van de daarop in een voorgaande stripvormige sectie van deze tunnel-opstelling opgebrachte micrometer hoge laag van de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie 25 in vloeibare- of vaste vorm ervan.Semiconductor substrate transfer / treatment tunnel arrangement, in which at least locally at the central upper treatment portion thereof the accommodation of a strip-shaped upper slit section, extending transversely thereof above the subsequent semiconductor substrate moving continuously underneath during its operation portions and in which, with the aid of a strip-shaped arrangement which is incorporated in the upper tunnel block, a heat treatment process takes place without interruption under the vibrating condition of the micrometer-high layer applied thereto in a previous strip-shaped section of this tunnel arrangement the combination of liquid carrier medium and particles of a semiconductor substance in liquid or solid form thereof.

Daarbij door de warmte-ontwikkeling van deze opstelling het ononderbroken plaatsvinden van verdamping van tenminste het hoofd-gedeelte van dit vloeibare draagmedium onder afvoer van de bewerkstelligde damp via een, gezien 30 in de verplaatsingsrichting van deze semiconductor substraat-gedeeltes, daarop-volgende stripvormige afvoer-sectie van het boventunnelblok en tenminste terplaatse van het laatste gedeelte van deze opstelling het bewerkstelligd zijn van neerslag van het resterende gedeelte van het 35 toegevoérde medium op de opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes onder een contactloze conditie ervan met de onderwand van deze opstelling en het daarop-volgend onderwand-gedeelte van dit boventunnelblok tot tenminste deze daarop-volgende 1037068 2 stripvormige medium-afvoersectie .Thereby, due to the heat development of this arrangement, the uninterrupted occurrence of evaporation of at least the main part of this liquid carrier medium while discharging the produced vapor via a strip-shaped drain, viewed in the direction of displacement of these semiconductor substrate portions section of the upper tunnel block and at least at the location of the last part of this arrangement the precipitation of the remaining part of the supplied medium on the subsequent semiconductor substrate sections moving underneath it under a contactless condition thereof with the bottom wall of this arrangement and the subsequent bottom wall portion of this upper tunnel block to at least this subsequent 1037068 2 strip-shaped medium discharge section.

Het is van het grootste belang, dat zulk een vloeibaar draagmedium en deeltjes van een semiconductor substantie optimaal gelijkmatig over de gehele breedte van dit centrale 5 semiconductor behandelings-gedeelte wordt toegevoerd.It is of the utmost importance that such a liquid carrier medium and particles of a semiconductor substance are supplied optimally uniformly over the entire width of this central semiconductor treatment part.

Daartoe is in het ondergedeelte van dit boventunnelblok vóór dit trilelement-gedeelte een mini stripvormig onder-mediumtoevoerblok opgenomen, welke een groot aantal in dwarsrichting naast elkaar gelegen medium-toevoerkanalen 10 bevat ten behoeve van het daarin gespreid toevoeren van deze combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie naar tenminste een eronder gelegen boven-spleetgedeelte.To this end, a mini-strip-shaped sub-medium supply block is included in the lower part of this upper tunnel block in front of this vibrating element part, which mini-channel contains a large number of transversely adjacent medium supply channels for the purpose of supplying this combination of liquid carrier medium and particles spread therein. from a semiconductor substance to at least an upper slit portion below it.

In het bovengedeelte van dit boventunnelblok daarbij de 15 opname van een stripvormig medium-toevoerblok, waarin de opname van een stripvormig medium-spreidblok ten behoeve van het daarin plaatsvinden van spreiding van het toegevoerde medium in dwarsrichting van het boventunnelblok.In the upper part of this upper tunnel block there is the accommodation of a strip-shaped medium supply block, in which the accommodation of a strip-shaped medium spreading block for the purpose of spreading the supplied medium therein in the transverse direction of the upper tunnel block.

In het daarboven opgenomen stripvormige medium-20 toevoerblok vindt daarbij de ononderbroken toevoer van deze combinatie van draagmedium en deeltjes van een semiconductor substantie plaats, met op dit blok de aansluiting van een medium-toevoerleiding, welke is aangesloten op een inrichting, waarin het mengen van het 25 vloeibaardraagmedium en de deeltjes van een semiconductor substantie plaats vindt.In the strip-shaped medium supply block included above, the continuous supply of this combination of carrier medium and particles of a semiconductor substance takes place, with the connection of a medium supply line connected to a device in which the mixing of the liquid carrier medium and the particles of a semiconductor substance take place.

Als gunstige uitvoeting van zulk een stripvormig trilelement-opstelling een transducer-opstelling, welke daarby is opgenomen in het boven- of ondertunnelblok.As a favorable embodiment of such a strip-shaped vibrating element arrangement, a transducer arrangement, which is included in the upper or lower tunnel block.

30 Zulk een stripvormige transducer bestaat daarbij typisch uit een aantal, in tenminste de dwarsrichting ervan naast elkaar gelegen dunne ultra-vlakke di-electrische schijven, met een optimaal gelijke hoogte ervan en zulks in een ronde of rechthoekige vorm en waarbij deze schijven met een 35 hecht-substantie verankerd zijn op een dun metalen drukwand-gedeelte van een boven- of ondertunnelblok.Such a strip-shaped transducer typically consists of a number of thin ultra-flat dielectric disks adjacent to each other in at least the transverse direction, with an optimally equal height thereof, and this in a round or rectangular shape and wherein these disks having a 35 adhesive substance are anchored to a thin metal pressure wall portion of an upper or lower tunnel block.

Zoals deze transducer-opstelling daarbij typisch is opgenomen in een uitwisselbaar metalen stripvormig 3 transducer-blok, bevat deze typisch mede zulk een toevoer-inrichting voor de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie en een stripvormig afvoer-gedeelte ten behoeve van de 5 afvoer van het door deze transducer verdampte vloeibare medium en zijn deze di-electrische schijven verankèrd op het metalen drukwand-gedeelte van dit blok.As this transducer arrangement is typically included in an interchangeable metal strip-shaped transducer block, it typically also includes such a feed device for the combination of liquid carrier medium and particles of a semiconductor substance and a strip-shaped discharge section for the purpose of the 5 drainage of the liquid medium evaporated by this transducer and these dielectric disks are anchored on the metal pressure wall portion of this block.

Daarbij bevat zulk een drukwand-gedeelte van deze transducer rondom ervan een eveneens dun membraam-gedeelte. 10 Op de bovenwand van deze schijven is daarbij een stripvormig dunwandig metalen electrode-plaat gehecht, met ter plaatse van typisch een uiteinde ervan de aansluiting erop van een electrisch toevoer-systeem vanaf een inrichting, waarin het ononderbroken plaatsvinden van 15 het opwekken en onderhouden van electrische trillingen onder zulk een tril-conditie ervan.In addition, such a pressure wall portion of this transducer contains a thin membrane portion around it. A strip-shaped thin-walled metal electrode plate is thereby adhered to the upper wall of these discs, with the connection of an electrical supply system thereto at a typical end thereof from a device in which the uninterrupted generation and maintenance of electrical vibrations under such a vibration condition thereof.

Daarbij elke mogelijke hoogte van deze trillingen, vanaf zeer laag, typische hoog-frequent (HF) tot zeer hoog, typisch megasonisch hoog-frequent (MHF).In addition, every possible height of these vibrations, from very low, typical high-frequency (HF) to very high, typically megasonic high-frequency (MHF).

20 Bij zulk een relatief laag-frequent trillen van deze transducer de daardoor mogelijke opname ervan in een stripvormige sectie van het ondertunnelblok en waarbij het ononderbroken plaatsvinden van het meetrillen van de opvolgende, ononderbroken erbovenlangs verplaatsende 25 semiconductor substraat-gedeeltes, met zelfs een relatief grote dikte ervan onder toepassing daarbij van een tenminste 0,1 mm dikke ononderbroken metalen band als een tijdelijke semiconductor onderlaag ervan.With such a relatively low-frequency vibration of this transducer, its thereby possible incorporation into a strip-shaped section of the sub-tunnel block and wherein the continuous occurrence of the measuring vibration of the subsequent semiconductor substrate sections moving continuously along it, with even a relatively large thickness thereof using a continuous metal band at least 0.1 mm thick as a temporary semiconductor backing layer thereof.

Verder in een stripvormige sectie van deze tunnel-30 opstelling in het ondertunnelblok de opname van zulk een uitwisselbare stripvormige ondertransducer-opstelling en in het boventunnelblok de opname van een uitwisselbaar stripvormig blok, waarin in een compartiment ervan de opstelling van een roterende nokkenas-opstelling ten 35 behoeve van het typisch hoog-frequent trillend op en neer verplaatsen van het zich eronder bevindende stripvormige drukwand-gedeelte ervan.Furthermore, in a strip-shaped section of this tunnel arrangement, in the sub-tunnel block the accommodation of such an interchangeable strip-shaped sub-transducer arrangement and in the upper tunnel block the accommodation of an interchangeable strip-shaped block, in which the arrangement of a rotating camshaft arrangement is arranged in a compartment thereof. For the purpose of typically high-frequency vibrating up and down movement of the strip-shaped pressure wall portion thereof located below.

Daarbij het tijdelijk onderhouden van een overdruk van 4 het medium in het stripvormige transducer-compartiment ten opzichte van de druk van het medium in het erboven gelegen nokkenas-compartiment ten behoeve van het tijdelijk onderhouden van een opwaartse verplaatsings-5 conditie van deze stripvormige trillende transducer, daartoe tevens fungerend als laag-frequent pulserende drukwand, tot op een micrometer hoge afstand onder de daarmede eveneens trillende opvolgende semiconductor substraat-gedeeltes met de erop neergeslagen deeltjes 10 van een semiconductor substantie ten behoeve van de bewerkstelliging van een optimale vlakheid van deze laag van deeltjes van de semiconductor substantie.Thereby temporarily maintaining an overpressure of the medium in the strip-shaped transducer compartment relative to the pressure of the medium in the overhead camshaft compartment for the purpose of temporarily maintaining an upward displacement condition of this strip-shaped vibrating transducer , to this end also serving as a low-frequency pulsed pressure wall, up to a micrometer high distance below the successive semiconductor substrate portions with the particles of a semiconductor substance deposited thereon for the purpose of achieving an optimum flatness of this layer of particles of the semiconductor substance.

Op de bovenzijde van het transducer-compartiment, welke is opgenomen in het boventunnelblok ter plaatse van het 15 begin-gedeelte ervan de opname van een toevoer van gasvormig medium en ter plaatse van het eind-gedeelte ervan een afvoer ten behoeve van het mede bijdragen in het tijdens de werking van de daarin opgenomen transducer onderhouden van een toenemende hoogte van het bovenspleet-20 gedeelte onder deze transducer in de richting van de erachter opgenomen stripvormige afvoersectie voor het verdampte medium.On the upper side of the transducer compartment, which is accommodated in the upper tunnel block at the location of its initial part, the reception of a supply of gaseous medium and at the location of its end part, a drain for co-contributing to maintaining, during the operation of the transducer contained therein, an increasing height of the upper slit portion below this transducer in the direction of the strip-shaped discharge section for the evaporated medium received thereafter.

Bij de opname van zulk een strip vormige boven- of onder transducer, welke tevens fungeert als warmtebron in 25 zulk een uitwisselbaar transducer blok, is daarbij tenminste in hoogterichting opzij ervan de opname van een stripvormig warmte-isolerend blok ten behoeve van het beperken van warmte-verlies ervan.When receiving such a strip-shaped top or bottom transducer, which also acts as a heat source in such an exchangeable transducer block, the position of a strip-shaped heat-insulating block for the purpose of limiting heat is at least in the lateral direction thereof. loss of it.

Bij toepassing van zulk een transducer in het 30 boventunnelblok daarbij in de onderwand van dit warmte-isolerende blok de opname van multi mini naast elkaar gelegen doorlaat-groeven voor dit gasvormige medium.When such a transducer is used in the upper tunnel block, the bottom wall of this heat-insulating block accommodates multi-mini adjacent pass-through grooves for this gaseous medium.

Met behulp van deze, mede in dwarsrichting uitstrekkende groeven in combinatie met deze trillende 35 transducer het daarbij onderhoden van een micrometer hoog, met gasvormig medium gevuld gedeelte tussen dit blok en deze transducer onder het daarbij onderhouden van een mechanisch contactloze conditie van deze trillende 5 transducer in dit blok.With the aid of these co-extending grooves in combination with this vibrating transducer, a micron-high portion filled with gaseous medium is thereby taught between this block and this transducer, while maintaining a mechanically contactless condition of this vibrating transducer in this block.

In deze tunnel-opstelling vindt verder tenminste plaatselijk na het opbrengen van zulk een micrometer hoge semiconductor laag van vaste deeltjes, typisch een 5 di-electrische laag, onder toepassing van zulk een trilelement-opstelling, tevens fungerend als warmtebron, in tenminste één volgend gedeelte ervan het herhalen van zulk een semiconductor laag-opbouw plaats.Furthermore, in this tunnel arrangement, at least locally after the application of such a micrometer-high semiconductor layer of solid particles, typically a dielectric layer, using such a vibrating element arrangement, also serving as a heat source, in at least one subsequent portion repeating such a semiconductor layer structure takes place.

In een gunstige werkwijze vindt daarbij na het 10 bewerkstelligd zijn van zulk een micrometer hoge laag van een typisch di-electrische substantie met behulp van mini stripvormig .electrisch verwarmings-element, welke is opgenomen in de onderwand van het boventunnelblok, het samensmelten ervan plaats, met in een volgende tunnel-15 sectie door afkoeling het bewerkstelligen van een micrometer hoge laag in een vaste toestand ervan.In a favorable method, after such a micrometer-high layer of a typical dielectric substance has been effected, the fusion thereof takes place with the aid of a mini-strip-shaped, selective heating element, which is incorporated in the bottom wall of the upper tunnel block, having a micrometer high layer in a solid state thereof in a subsequent tunnel section by cooling.

Zulk een electrische verwarmings-inrichting is verder gedetailleerd in een aantal Figuren aangegeven.Such an electric heating device is further detailed in a number of Figures.

Verder is zulk een verwarmings-proces van een 20 opgebrachte laag van deeltjes van een semiconductor substantie reeds omschreven in de bijgaande Nederlandse Octrooi-aanvrage No. 4.Furthermore, such a heating process of an applied layer of particles of a semiconductor substance has already been described in the accompanying Dutch Patent Application no. 4.

Als alternatief vindt na het bewerkstelligd zijn van een aantal van deze opgebouwde lagen zulk een oven-25 behandeling plaats.Alternatively, after a number of these layers have been built up, such an oven treatment takes place.

Achter de in het boventunnelblok opgenomen stripvormige medium toevoer-inrichting voor de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie in vaste toestand ervan is een met vloeibaar medium 30 gevuld uitwisselbaar stripvormig semiconductor blok opgenomen, waarbij in het compartiment ervan de opname van een stripvormige, zich verdraaiende nokkenas-opstelling, bevattende een stripvormige drukplaatsectie, met daarin opgenomen een dunwandig electrisch verwarmings-element ten 35 behoeve van het daarmede verdampen van het toegevoerde vloeibare draagmedium.Behind the strip-shaped medium feed device for the combination of liquid carrier medium and particles of a semiconductor substance in its solid state contained in the upper tunnel block is an exchangeable strip-shaped semiconductor block filled with liquid medium, the compartment of which accommodates a strip-shaped , rotating camshaft arrangement, comprising a strip-shaped pressure plate section, including a thin-walled electric heating element for evaporating the supplied liquid carrier medium therewith.

Daarbij een zodanige profilering van de nokken ervan, dat daarmede een langzame opwaartse en een daarop 6 volgende snelle neerwaartse verplaatsing van de· drukplaat-sectie plaats vindt ten behoeve van een optimaal opbreng-proces voor deeltjrs van zulk een vaste semiconductor substantie.Thereby profiling of its cams such that a slow upward and subsequent rapid downward displacement of the printing plate section takes place for the purpose of an optimum application process for particles of such a solid semiconductor substance.

5 Als alternatieve uitvoering van deze nokken of een tegengestelde verdraai-richting van deze nokkenas een zodanige profilering ervan, dat daarbij, gezien in de draai-richting ervan, welke daarbij tegengesteld is, het daarmede bewerkstelligen van een snelle opwaartse en een 10 daarop volgende langzame neerwaartse verplaatsing van deze drukwandsectie ten behoeve van het met deze nokkenas-opstelling plaatsvinden van een optimaal semiconductor behandelings-proces, zoals onder andere reinigen, etsen, strippen of spoelen.As an alternative embodiment of these cams or an opposite direction of rotation of this camshaft, such a profiling is such that, seen in the direction of rotation thereof, which is opposite, thereby effecting a rapid upward and a subsequent slow downward movement of this pressure wall section for the purpose of an optimum semiconductor treatment process taking place with this camshaft arrangement, such as, among other things, cleaning, etching, stripping or rinsing.

15 Zulk een nokkenas-opstelling is eveneens aangegeven in deze Nederlandse Octrooi-aanvrage No. 4.Such a camshaft arrangement is also indicated in this Dutch Patent Application no. 4.

Verder voor deze semiconductor tunnel-opstelling de mogelijke combinatie van een strip vormige hoog-frequent trillende onder-transducer, welke is opgenomen in het 20 ondertunnelblok, en een daarboven gelegen stripvormige zeer hoog-frequent trillende boven-trahsducer, welke is opgenomen in het boventunnelblok.Furthermore, for this semiconductor tunnel arrangement, the possible combination of a strip-shaped high-frequency vibrating lower transducer, which is included in the sub-tunnel block, and a superimposed strip-shaped very high-frequency vibrating upper-transducer, which is incorporated in the upper tunnel block .

Daarbij elke gewenst wordende semiconductor uitvoering en werkwijze van deze combinatie van een onder- en boven-25 transducer.In addition, any desired semiconductor design and method of this combination of a top and bottom transducer.

Verder in opvolgende secties van het boventunnelblok de opname van een toevoer-inrichting voor de gescheiden toevoer van hoog-kokend vloeibaar draagmedium en de toevoer van de combinatie van laag-kokend vloeibaar 30 draagmedium en deeltjes van een semiconductor substantie in vaste vorm ervan.Furthermore, in subsequent sections of the upper tunnel block the inclusion of a feed device for the separate supply of high-boiling liquid carrier medium and the supply of the combination of low-boiling liquid carrier medium and particles of a semiconductor substance in its solid form.

Daarbij met behulp van een eerste, daarin opgenomen transducer door verdamping van het laag-kokende vloeibare draagmedium het bewerkstelligen van neerslag van de 35 combinatie van het hoog-kokende vloeibare draagmedium en deze deeltjes van een vaste substantie en met behulp van een tweede transducer, mede fungerend als een versterkte warmtebron, onder het begin-gedeelte ervan het plaatsvinden 7 van verdamping van dit hoger-kokende vloeibare draag-medium onder het plaatsvinden van uitdrijving van het verdampte medium uit deze opgebrachte semiconductor laag en vervolgens daarmede onder het eind-gedeelte ervan het 5 plaatsvinden van het smelten van deze resterende laag van deeltjes van deze semiconductor substantie onder de vorming van een vloeibare micrometer hoge laag ervan.Thereby, with the aid of a first transducer included therein by evaporation of the low-boiling liquid carrier medium, effecting precipitation of the combination of the high-boiling liquid carrier medium and these particles of a solid substance and with the aid of a second transducer, acting as an amplified heat source, below its initial portion, vaporization of this higher-boiling liquid carrier medium occurs upon expulsion of the vaporized medium from this applied semiconductor layer and then therewith below the end portion thereof 5 occurrence of the melting of this remaining layer of particles of this semiconductor substance to form a liquid micrometer high layer thereof.

Verder typisch in een stripvormige sectie van het boventunnelblok achter de opname daarin van zulk een 10 stripvormige medium toevoer-inrichting een stripvormig uitwisselbaar blok, waarin de opname van een compartiment, bevattende zulk een stripvormige transducer-opstelling en typisch een daarop volgende medium-afvoergroef , met aansluiting daarop van een afvoer-systeem voor het 15 daarmede verdampte medium ten behoeve van het onderhouden van een zeer hoog-frequente tril-conditie van het stripvormige onder wand-gedeelte van dit blok en waarbij onder dit blok in het ondertunnelblok eveneens de opname van een uitwisselbaar blok, bevattende eveneens een 20 stripvormig compartiment, waarin eveneens de opname van een nokkenas-opstelling met daarboven een stripvormige drukwand-gedeelte van dit blok ten behoeve van het met behulp van toegevoerd vloeibaar medium via een voorgaande stripvormige toevoer-inrichting in dit blok het 25 bewerkstelligen en vervolgens onderhouden van een micrometer hoge film ervan tussen dit drukwand-gedeelte en de opvolgende, ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes ten behoeve van het daarmede ononderbroken plaatsvinden van een semiconductor 30 behandelings-proces mede onder tril-conditie van deze opvolgende semiconductor substraat-gedeeltes.Furthermore, typically in a strip-shaped section of the upper tunnel block behind the accommodation therein of such a strip-shaped medium supply device, a strip-shaped exchangeable block, in which the accommodation of a compartment containing such a strip-shaped transducer arrangement and typically a subsequent medium discharge groove, with connection thereto of a discharge system for the medium evaporated therewith for the purpose of maintaining a very high-frequency vibrating condition of the strip-shaped bottom wall portion of this block and wherein also under this block in the sub-tunnel block an exchangeable block, also comprising a strip-shaped compartment, in which also the accommodation of a camshaft arrangement with above it a strip-shaped pressure wall part of this block for the liquid medium supplied via a preceding strip-shaped feed device in this block effecting and subsequently maintaining a micrometer ho a film thereof between this pressure wall section and the subsequent semiconductor substrate sections continuously moving along it for the purpose of the continuous occurrence of a semiconductor treatment process also under the vibrating condition of these successive semiconductor substrate sections.

Daarbij hebben de nokken van deze nokkenas-opstelling, gezien in de verplaatsings-richting ervan, een korte oplopende hoogte en daarachter een relatief lange aflopende 35 hoogte ervan, ten behoeve van het met behulp van deze trillende boven-transducer, daarbij tevens fungerend als warmtebron, het bewerkstelligen van een micrometer hoge laag gesmolten di-electrische substantie.In this case, the cams of this camshaft arrangement, viewed in the direction of movement thereof, have a short ascending height and thereafter a relatively long descending height thereof, for the purpose of using this vibrating upper transducer, thereby also serving as a heat source effecting a micrometer high layer of molten dielectric substance.

8 Ια een daarop volgende stripvormige afkoelsectie van deze tunnel-opstelling het bewerkstelligen van een aanvulbare micrometer hoge vaste laag ervan, welke daarbij verankerd is op de reeds in voorgaande tunnel-secties 5 opgebouwde di-electrische laag.8 a subsequent strip-shaped cooling section of this tunnel arrangement for effecting a replenishing micrometer-high fixed layer thereof, which is thereby anchored on the dielectric layer already built up in previous tunnel sections.

Verder daarbij werkwijzen voor deze semiconductor opstelling, welke reeds zijn omschreven in deze aanvrage No. 4.Furthermore, methods for this semiconductor arrangement, which have already been described in this application no. 4.

In deze semiconductor tunnel-opstelling verder 10 plaatselijk de opname van een aantal opvolgende semiconductor behandelings-secties voor de ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes en tenminste plaatselijk in het boven- en ondertunnelblok de opname van een aantal opvolgende 15 trilelement-opstellingen, welke mede fungeren als warmtebron ten behoeve van het daarmede plaatsvinden van een ononderbroken semiconductor behandelings-proces van de opvolgende, ononderbroken eronder- of erbovenlangs verplaatsende semiconductor substraat-gedeeltes.In this semiconductor tunnel arrangement, furthermore, locally the inclusion of a number of successive semiconductor treatment sections for the continuous moving semiconductor substrate sections and at least locally in the upper and lower tunnel blocks the inclusion of a number of successive vibrating element arrangements, which also act as a heat source for the purpose of thereby taking place a continuous semiconductor treatment process of the successive, continuous underneath or superimposed semiconductor substrate portions.

20 Verdere gunstige kenmerken van deze semiconductor tunnel-opstelling onder tenminste plaatselijk de toepassing van zulke stripvormige semiconductor trilelement-opstellingen, welke zijn opgenomen in het boven- en ondertunnelblok ervan en fungeren mede als trillende 25 warmtebron, volgen uit de aangegeven Figuren en de beschrijving ervan.Further favorable features of this semiconductor tunnel arrangement including at least locally the use of such strip-shaped semiconductor vibrating element arrangements, which are included in its upper and lower tunnel blocks and also function as a vibrating heat source, follow from the indicated Figures and their description. .

Zulke, in deze tunnel-opstelling opgenomen stripvormige trilelement-opstellingen en de andere semiconductor opstellingen alsmede de werkwijzen ervan zijn tevens 30 toepasbaar in de gelijktijdig net deze Octrooi-aanvrage ingadiende andere Nederlandse Octrooi-aanvragen betreffende zulk een semiconductor substraat transfer/ behandelings-tunnelopstelling en zulks in een al dan niet aangepaste vorm ervan.Such strip-shaped vibratory element arrangements and the other semiconductor arrangements included in this tunnel arrangement and their methods can also be used in the other Dutch Patent Applications filed simultaneously with this Patent Application concerning such a semiconductor substrate transfer / treatment tunnel arrangement and this in a modified form or not.

35 Tevens zijn de in deze andere Octrooi-aanvragen aangegeven en omschreven middelen en werkwijzen eveneens toepasbaar in deze semiconductor tunnel-opstelling en zulks eveneens in een al dan niet daartoe aangepaste vorm 9 ervan .The means and methods specified and described in these other Patent Applications are also applicable to this semiconductor tunnel arrangement and this also in a form 9 of which it is adapted or not adapted thereto.

Figuur 1 toont in een stripvormige sectie van het boventunnelblok achter de daarin opgenomen stripvormige 5 medium toevoer-inrichting voor de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie in vaste toestand ervan een in een met vloeibaar medium gevuld compartiment van een uitwisselbaar stripvormig blok opgenomen zich verdraaiende nokkenas-opstelling, 10 bevattende een stripvormige drukwandsectie,met daarin opgenomen een dunwandig electrisch verwarmings-element ten behoeve van het daarmede tenminste verdampen van het toegevoerde vloeibare draagmedium en waarby met behulp van deze verdraaiende nokkenas het tevens onderhouden 15 van een typisch laag-frequente pulseer-conditie van deze drukwandsectie onder het daarmede ononderbroken plaatsvinden van een semiconductor behandelings-proces van de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes.Figure 1 shows in a strip-shaped section of the upper tunnel block behind the strip-shaped medium supply device incorporated therein for the combination of liquid carrier medium and particles of a semiconductor substance in its solid state a compartment of an exchangeable strip-shaped block filled with liquid medium rotating camshaft arrangement, comprising a strip-shaped pressure wall section, including a thin-walled electric heating element for the purpose of at least evaporating the supplied liquid carrier medium and, by means of this rotating camshaft, also maintaining a typical layer frequent pulsing condition of this pressure wall section with the consequent uninterrupted occurrence of a semiconductor treatment process of the subsequent, continuously moving semiconductor substrate sections along it.

20 Figuren 2A en ® tonen daarbij sterk vergroot het ononderbroken plaatsvinden van de opbouw van een micrometer hoge di-electrische substantie op de reeds in een voorgaande tunnelsectie opgebouwde relatief hoge laag ervan.Figs. 2A and ® show greatly increased the uninterrupted occurrence of the construction of a micrometer-high dielectric substance on its relatively high layer already built up in a previous tunnel section.

25 Figuren 3 ^ e(1 B tonen daarbij sterk vergroot het ononderbroken plaatsvinden van de opbouw van een micrometer hoge laag di-electrische substantie op de reeds in een voorgaande tunnelsectie opgebouwde micrometer hoge laag Figuur 4 toont de in de Figuurl aangegeven nokkenas-30 opstelling in het midden-gedeelte van een stripvormig compartiment van een uitwisselbaar blok, welke drukdicht is bevestigd op het boventunnelblok en waarbij eronder in het ondertunnelblok een eveneens met vloeinaar medium gevuld stripvormig compartiment van zulk een uitwisselbaar 35 blok met als boven-gedeelte ervan een stripvormige, in hoogterichting verplaatsbaar drukwand-gedeelte van dit blok ten behoeve van het met behulp van het opvolgend toe-en afvoeren van het vloeibare medium naar en vanaf 10 dit compartiment het daar bij onderhouden van een opvolgend op- en neerwaarts verplaatsen ervan en daarmede van de ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes onder typisch een mechanisch contact 5 ermede ten behoeve van het daarmede plaatsvinden van een semiconductor behandelings-proces van deze opvolgende substraat-gedeeltes onder de combinatie van een typisch hoog-frequent trillend stripvormig onderwand-gedeelte van het boventunnelblok en het laag-frequent pulserend 10 stripvormig bovenwand-gedeelte van het ondertunnelblok.Figures 3 ^ e (1B show greatly enlarged the uninterrupted occurrence of the construction of a micrometer high layer of dielectric substance on the micrometer high layer already built up in a previous tunnel section. Figure 4 shows the camshaft arrangement shown in Figure 1 in the middle part of a strip-shaped compartment of an interchangeable block, which is pressure-tightly mounted on the upper tunnel block and below which in the under-tunnel block is a strip-shaped compartment of such an exchangeable block, also filled with flux medium, with a strip-shaped upper part thereof, height-displaceable pressure wall portion of this block for the purpose of the subsequent supply and discharge of the liquid medium to and from this compartment, while maintaining a subsequent up and down movement thereof and thereby of the continuous semiconductor substrate portions moving thereabove under typically a mecha technical contact for the purpose of the subsequent occurrence of a semiconductor treatment process of these successive substrate portions under the combination of a typical high-frequency vibrating strip-shaped lower wall portion of the upper tunnel block and the low-frequency pulsating strip-shaped upper wall portion from the sub-tunnel block.

Figuur 5 toont de nokkenas-opstelling volgens de Figuur 4, waarby echter de positie ervan, gezien in de verplaatsingsrichting van deze opvolgende substraat-gedeeltes, in het achter-gedeelte van dit compartiment.Figure 5 shows the camshaft arrangement according to Figure 4, but with its position, viewed in the direction of movement of these successive substrate portions, in the rear portion of this compartment.

15 Figuren 6^ t/^ni tonen voor de nokkenas-opstellingen, welke zijn aangegeven in de Figuren 4 en 5, nokken met een zodanige profilering ervan, dat daarmede een langzame opwaartse en een daarop-volgende snelle neerwaartse verplaatsing van de daarin mede aangegeven drukwand-20 sectie plaats vindt ten behoeve van een optimaal opbreng-proces voor deeltjes van een vaste semiconductor substantie.Figures 6 to 7 show, for the camshaft arrangements shown in Figures 4 and 5, cams with a profiling thereof such that a slow upward and subsequent rapid downward movement of the co-indicated therein pressure wall section takes place for an optimum application process for particles of a solid semiconductor substance.

Figuren 6^** t/m EU tonen als alternatieve uitvoering van deze nokken een zodanige profilering ervan, dat daarbij 25 het daarmede bewerkstelligen van een snelle opwaartse en een daarop-volgende langzame neerwaartse verplaatsing van deze drukwand-sectie ten behoeve van het met deze nokkenas-opstelling plaatsvinden van een optimaal semiconductor behandelings-proces, zoals onder andere 30 reinigen, etsen, strippen of spoelen.Figures 6 ^ ** to EU show, as an alternative embodiment of these cams, such a profiling thereof that thereby effecting a rapid upward and a subsequent slow downward displacement of this pressure wall section for the purpose of camshaft arrangement of an optimum semiconductor treatment process, such as cleaning, etching, stripping or rinsing.

Figuur 7 toont in een gedeelte van de semiconductor tunnel-opstelling een stripvormige transducer-opstelling, welke is opgenomen in een uitwisselbaar stripvormig boventunnelblok-gedeelte en zulks tezamen met ervóór een 35 stripvormige inrichting ten behoeve van de ononderbroken toevoer van de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie en erachter een stripvormige afvoersectie ten behoeve van de afvoer 11 van het net behulp van deze tranducer verdampte vloeibare draagmedium.Figure 7 shows in a part of the semiconductor tunnel arrangement a strip-shaped transducer arrangement, which is included in an exchangeable strip-shaped upper tunnel block section and this together with a strip-shaped device for the uninterrupted supply of the combination of liquid carrier medium and particles of a semiconductor substance and behind it a strip-shaped discharge section for the discharge 11 of the liquid carrier medium evaporated using this tranducer.

Figuur 8 toont zeer sterk vergroot de doorsnede over de lijn 8-8 terplaatse van de onderwand van de warmte-5 isolerende laag in het boven-gedeelte van het transducer-compartiment tussen de daarin opgenomen toe- en afvoer-groef voor gasvormig medium ten behoeve van het vermijden van een mechanisch contact van deze transducer met deZe laag.Figure 8 shows, greatly enlarged, the section along the line 8-8 of the bottom wall of the heat-insulating layer in the upper part of the transducer compartment between the inlet and outlet groove for gaseous medium accommodated therein of avoiding mechanical contact of this transducer with this layer.

10 Figuur 9 toont de combinatie van een gedeeltelijk boven-aanzicht en van een doorsnede van een transducer-opstelling, waarin de opname van een aantal naast elkaar gelegen dunwandige cilindrische di-electrische schijven en waarbij het stripvormige onder-electrodegedeelte ervan 15 een deel is van het onderwand-gedeelte van een uitwisselbaar metalen transducerblok en de boven-electrodeplaat een electrische aansluiting ter plaatse van een uiteinde ervan bevat ten behoeve van de aansluiting van deze plaat op een electrische inrichting, 20 waarin de opwekking van een ononderbroken electrische spanning onder een tril-conditie ervan, met aldus tijdens de werking van deze tunnel-opstelling het onderhouden van zulk een tril-conditie van deze transducer-opstelling.Figure 9 shows the combination of a partial plan view and a sectional view of a transducer arrangement, in which the accommodation of a number of adjacent thin-walled cylindrical dielectric disks and wherein the strip-shaped lower electrode portion thereof is a part of the lower wall portion of an exchangeable metal transducer block and the upper electrode plate comprises an electrical connection at one end thereof for the connection of this plate to an electrical device, in which the generation of a continuous electrical voltage under a vibration condition thereof, thus maintaining such a vibration condition of this transducer arrangement during the operation of this tunnel arrangement.

Figuur 10 toont da ar bij vergroot de doorsnede over de 25 lijn 10-13 van de* transducer-opstelling volgens de Figuur 9.Figure 10 shows an enlarged sectional view along the line 10-13 of the transducer arrangement according to Figure 9.

Figuur 11 toont in een alternatieve uitvoering van deze transducer-opstelling een tweetal naast elkaar gelegen rijen van zulke cilindrische di-electrische 30 schijven.Figure 11 shows, in an alternative embodiment of this transducer arrangement, two adjacent rows of such cylindrical dielectric disks.

Figuur 12 toont voor zulk een transducer-opstelling een aantal in dwarsrichting ervan naast elkaar gelegen rechthoekige dunne di-electrische schijven.Fig. 12 shows a number of rectangular thin dielectric discs adjacent to each other for such a transducer arrangement.

Figuur 13 toont daarbij een tweetal naast elkaar 35 gelegen rijen van zulke rechthoekige di-electrische schijven.Figure 13 shows two rows of adjacent rectangular dielectric disks.

Figuur 14 toont de medium toevoer-inrichting, welke is aangegeven in de Figuur 1, met daarop op de 12 afvoerzyde ervan de aansluiting van een in het boventunnelblok opgenomen uitwisselbare stripvormige transducer-opstelling ten behoeve van het tenminste daarmede plaatsvinden van verdamping van dit typisch 5 laag-kokende vloeibare draag.medium en afvoer ervan via een daarop-volgende stripvormige afvoersectie van dit blok en waarbij gelijktijdig het tevens opbrengen van tenminste deze deeltjes van een semiconductor substantie op deze eronderlangs verplaatsende 10 semiconductor substraat-gedeeltes, in een volgende stripvormige sectie van de onderwand van het boventunnelblok de opname van een mini stripvormig electrisch verwarmings-element ten behoeve van het daarmede tenminste nagenoeg uitsluitend en ononderbroken 15 plaatsvinden van het smelten van de daarop neergeslagen deeltjes van een vaste semiconductor substantie en in een daarop-volgende afkoelsectie van dit blok de opname van een stripvormige afkoelsectie ten behoeve van de bewerkstelliging van een micrometer hoge laag van deze 20 semiconductor substantie.Figure 14 shows the medium supply device, which is indicated in Figure 1, with on its 12 discharge side the connection of an exchangeable strip-shaped transducer arrangement included in the upper tunnel block for the purpose of at least thereby causing evaporation of this typical low-boiling liquid carrier medium and discharge thereof through a subsequent strip-shaped drain section of this block and simultaneously applying also at least these particles of a semiconductor substance to these semiconductor substrate portions moving therebetween, in a subsequent strip-shaped section of the bottom wall of the upper tunnel block accommodating a mini-strip-shaped electric heating element for the purpose of at least substantially and continuously taking place the melting of the particles of a solid semiconductor substance deposited thereon and in a subsequent cooling section of this block the recording of a strip-shaped cooling section for effecting a micrometer-high layer of this semiconductor substance.

Figuren 15^, B en C tonen alternatieve uitvoeringen van dit stripvormige electrische verwarmings-element, welke daarbij omgeven is door een di-electrische warmte-isolerende omhulling, bevattende een mini warmte-25 doorlaatgroef, welke zich in benedenwaartse richting uitstrekt naar de onderwand ervan.Figures 15, B and C show alternative embodiments of this strip-shaped electric heating element, which is thereby surrounded by a dielectric heat-insulating envelope, comprising a mini heat-transmitting groove, which extends downwardly to its lower wall .

Figuren 16^, B en C tonen het met behulp van dit verwarmings-element plaatsvinden van het samensmelten van de micrometer hoge laag van deeltjes van een vaste 30 semiconductor substantie op een micrometer hoge en in een voldoende mate tijdelijke vloeibare hechtsubstantie, welke reeds in een voorgaand bovenspleet-gedeelte is opgebracht op de opvolgende, ononderbroken eronderlangs verplaatsende metalen band-gedeeltes als een tijdelijke 35 semiconductor onderlaag van de opvolgende semiconductor substraat-gedeeltes en waarbij in een volgende stripvormige afkoel-inrichting, welke is opgenomen in 13 het boventunnelblok en aangegeven in de Figuur 14, door afkoeling ervan de bewerkstelliging van typisch een micrometer hoge di-electrische laag, welke verankerd is op deze tijdelyke hechtlaag.Figures 16 ^, B and C show the melting of the micrometer-high layer of particles of a solid semiconductor substance to a micrometer-high and sufficiently temporary liquid adherent substance which are already present in a the preceding upper slit portion is applied to the successive, continuous metal band portions moving therebetween as a temporary semiconductor substrate of the succeeding semiconductor substrate portions and with a subsequent strip-shaped cooling device included in the upper tunnel block and indicated in Fig. 14, by cooling it, the realization of typically a micrometer-high dielectric layer, which is anchored on this temporary adhesive layer.

5 Figuur 17 toont de opname van zulk een stripvormige transducer-opstelling in het transducer-compartiment van een uitwisselbaar transducerblok, welke is opgenomen in het boventunnelblok en waarbij deze transducer verder daarbij zodanig is uitgevoerd, dat het mede fungeren ervan 10 als een stripvormige, typisch laag-frequent pulserende drukwand en waarbij daartoe het opvolgende plaatsvinden van de toe- en afvoer van typisch gasvormig medium naar en vanaf dit compartiment.Figure 17 shows the incorporation of such a strip-shaped transducer arrangement into the transducer compartment of an interchangeable transducer block, which is included in the upper tunnel block and wherein this transducer is furthermore designed in such a way that it co-acts as a strip-shaped, typically low-frequency pulsed pressure wall and with the subsequent taking place of the supply and discharge of typical gaseous medium to and from this compartment.

Figuur 18 toont een stripvormige, typisch tenminste 15 laag-frequent pulserende transducer, waarbij de opname ervan in een stripvormig uitwisselbaar transducer-blok, welke is opgenomen in het ondertunnelblok ten behoeve van het daarmede ononderbroken plaatsvinden van het meetrillen van de opvolgende, ononderbroken erbovenlangs 20 verplaatsende semiconductor substraat-gedeeltes met een relatief grote dikte ervan, zoals daarbij de toepassing van een tenminste 0,1 mm dikke ononderbroken metalen band als een tijdelijke semiconductor onderlaag ervan.Figure 18 shows a strip-shaped, typically at least 15 low-frequency pulsed transducer, the incorporation thereof in a strip-shaped exchangeable transducer block, which is included in the sub-tunnel block for the continuous uninterrupted measurement of the subsequent, continuous, superimposed transducer 20 moving semiconductor substrate portions with a relatively large thickness thereof, such as the use of an at least 0.1 mm thick continuous metal band as a temporary semiconductor bottom layer thereof.

Figuur 19 toont de stripvormige transducer-opstelling 25 volgens de Figuur 18 en waarbij deze transducer tevens fungeert als stripvormige drukwand ten behoeve van het met behulp van het zeer laag-frequent pulserend toe- en afvoeren van het gasvormige medium naar en vanaf het transducer-compartiment in dit blok mede onderhouden 30 van een pulseer-conditie met zulk een uiterst lage pulseer-conditie ervan.Figure 19 shows the strip-shaped transducer arrangement according to Figure 18 and wherein this transducer also functions as a strip-shaped pressure wall for the purpose of supplying and discharging the gaseous medium to and from the transducer compartment with the aid of the very low-frequency pulsed supply and discharge. co-maintaining in this block a pulsating condition with such an extremely low pulsing condition.

Daarbij elke mogelijke hoogte van deze trillingen, vanaf zeer laag, typisch laag-frequent (LF) tot zeer hoog, typisch ultrasonisch hoog-frequent (UHF).In addition, every possible height of these vibrations, from very low, typically low-frequency (LF) to very high, typically ultrasonic high-frequency (UHF).

35 Zulk een typisch hoog-frequent trillen van deze transducer daarmede eveneens trillende opvolgende substraat-gedeeltes met de erop neergeslagen deeltjes van een semiconductor substantie.Such a typical high-frequency vibration of this transducer with it also vibrating successive substrate portions with the particles of a semiconductor substance deposited thereon.

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Daarbij elke gewenste wordende semiconductor uitvoering en werkwijze van deze combinatie van een onder- en boven-transducer.In addition, any desired semiconductor design and method of this combination of a top and bottom transducer.

Figuur 21 toont in een stripvormige sectie van de 5 semiconductor tunnel-opstelling in het ondertunnelblok de opname van zulk een uitwisselbare stripvormige ondertransducer-opstelling en in het boventunnelblok de opname van een uitwisselbaar stripvormig blok, waarin in een compartiment ervan de opstelling van een roterende 10 nokkenas-opstelling ten behoeve van het typisch hoogfrequent trillend op en neer verplaatsen van het zich eronder bevindende drukwand-gedeelte ervan en waarbij met behulp van deze onder-transducer het mede onderhouden van een typisch laag-frequente pulseer-conditie van de 15 opvolgende, ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes.Figure 21 shows in a strip-shaped section of the semiconductor tunnel arrangement in the sub-tunnel block the incorporation of such an interchangeable strip-shaped sub-transducer arrangement and in the upper tunnel block the incorporation of an exchangeable strip-shaped block, in which the arrangement of a rotating 10 camshaft arrangement for typically high-frequency vibrating up-and-down movement of its pressurized wall portion and with the aid of this lower transducer co-maintaining a typical low-frequency pulsing condition of the subsequent, uninterrupted semiconductor substrate portions moving thereabove.

Figuur 22 toont de opname in het boventunnelblok van een toevoer-inrichting voor de gescheiden toevoer van hoog-kokend vloeibaar draagmedium en de toevoer van de 20 combinatie van laag-kokend vloeibaar draagmedium en deeltjes van een semiconductor substantie in vaste vorm ervan en waarbij met behulp van een eerste, daarin opgenomen transducer door verdamping van het laag-kokende vloeibare draagmedium het bewerkstelligen van 25 neerslag van de combinatie van hoog-kokende vloeibare draagmedium en deze deeltjes van een vaste substantie.Figure 22 shows the incorporation into the upper tunnel block of a feed device for the separate supply of high-boiling liquid carrier medium and the supply of the combination of low-boiling liquid carrier medium and particles of a semiconductor substance in its solid form and with the aid of of a first transducer included therein by evaporation of the low-boiling liquid carrier medium effecting precipitation of the combination of high-boiling liquid carrier medium and these particles of a solid substance.

Figuur 23 toont de transducer-opstelling volgens de Figuur 22, met daarachter in het boventunnelblok de opname van een tweede transducer ten behoeve van het 30 daarmede verdampen van dit hoger-kokende vloeibare draagmedium onder het plaatsvinden van uitdrijving van het verdampte medium uit deze opgebrachte semiconductor laag en vervolgens door het mede fungeren ervan als oven-sectie daarmede onder het eind-gedeelte ervan het 35 plaatsvinden van het samensmelten van deze resterende laag van deeltjes van deze semiconductor substantie onder de vorming van een vloeibare micrometer hoge laag ervan.Figure 23 shows the transducer arrangement according to Figure 22, behind which in the upper tunnel block there is the reception of a second transducer for the purpose of evaporating this higher-boiling liquid carrier medium while expulsion of the evaporated medium from this applied semiconductor layer and then by co-acting as an oven section therewith below the end portion thereof the fusion of this remaining layer of particles of this semiconductor substance to form a liquid micrometer high layer thereof.

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Figuur 2k toont in deze tunnel-opstelling tenminste plaatselijk in het boventunnelblok de opname van een aantal opvolgende stripvormige semiconductoe behandelings-secties'-ervan, met daarin de opstelling van zulk een 5 stripvormige boven-transducer met ervóór zulk een stripvormige inrichting ten behoeve van de ononderbroken toevoer van de combinatie van vloeibaar draagmedium en deeltjes van een semiconductor substantie.in vaste vorm, typisch een di-electrische substantie, en daarachter zulk 10 een stripvormige afvoer-sectie ten behoeve van de afvoer van het met behulp van deze transducer-opstelling door verdamping van dit vloeibare draagmedium bewerkstelligde dampvormige medium, met ertussen de opname van een stripvormige mediumslot-opstelling onder toepassing van 15 een tweetal opvolgende toevoergroeven voor het slotmedium ten behoeve van het gescheiden houden van deze opvolgende semiconductor behandelings-secties en waarbij pas na het bewerkstelligd zijn van deze opgebouwde semiconductor lagen het plaatsvinden van zulk een oven-behandeling 20 ervan ten behoeve van tenminste mede het samensmelten van deze opgebrachte deeltjes van een di-electrische substantie.Figure 2k shows in this tunnel arrangement at least locally in the upper tunnel block the incorporation of a number of successive strip-shaped semiconductor treatment sections thereof, including the arrangement of such a strip-shaped upper transducer with such a strip-shaped device for the benefit of the uninterrupted supply of the combination of liquid carrier medium and particles of a semiconductor substance in solid form, typically a dielectric substance, and behind such a strip-shaped discharge section for the purpose of discharging it through this transducer arrangement by vaporization of this liquid carrier medium effected vaporous medium, with the inclusion of a strip-shaped medium slot arrangement in between using two successive feed grooves for the slot medium for the purpose of keeping these successive semiconductor treatment sections separate and with which only after they have been effected of this accumulated semicon The condition of such a furnace treatment was at least for the co-fusing of these applied particles of a dielectric substance.

Figuur 25 toont in een stripvormige sectie van het boventunnelblok achter de opname daarin van zulk een 25 stripvormige medium toevoer-inrichting een stripvormig uitwisselbaar blok, waarin de opname van een compartiment, bevattende zulk een stripvormige transducer-opstelling en typisch een daarop volgende medium-afvoergroef , met aansluiting daarop van een afvoer-systeem voor het 30 daarmede verdampte medium ten behoeve van het onderhouden van een zeer hoog-frequente tril-conditie van het stripvormige on.d.erwand-gedeelte van dit blok en waarbij onder dit blok in het ondertunnelblok eveneens de opname van een uitwisselbaar blok, bevattende eveneens een 35 stripvormig compartiment, waarin eveneens de opname van een nokkenas-opstelling met daarboven een stripvormige drukwand-gedeelte van dit blok ten behoeve van het met behulp van toegevoerd vloeibaar medium via een voorgaande 16 stripvormige toevoer-inrichting in dit blok het bewerkstelligen en vervolgens onderhouden van een micrometer hoge film ervan tussen dit drukwand-gedeelte en de opvolgende, ononderbroken erbovenlangs verplaatsende 5 semiconductor substraat-gedeeltes ten behoeve van het daarmede ononderbroken plaatsvinden van een semiconductor behandelings-proces mede onder tril-conditie van deze opvolgende semiconductor substraat-gedeeltes.Figure 25 shows in a strip-shaped section of the upper tunnel block behind the accommodation therein of such a strip-shaped medium supply device a strip-shaped exchangeable block, in which the accommodation of a compartment containing such a strip-shaped transducer arrangement and typically a subsequent medium discharge groove , followed by a discharge system for the medium evaporated therewith for the purpose of maintaining a very high-frequency vibration condition of the strip-shaped bottom wall portion of this block and wherein below this block in the sub-tunnel block also the accommodation of an exchangeable block, also comprising a strip-shaped compartment, in which also the accommodation of a camshaft arrangement with above it a strip-shaped pressure wall part of this block for the liquid medium supplied via a preceding 16 strip-shaped feed device in this block to establish and subsequently maintain a micrometer a high film thereof between this pressure wall portion and the subsequent semiconductor substrate portions continuously moving above it for the purpose of the continuous occurrence of a semiconductor treatment process partly under the vibrating condition of these successive semiconductor substrate portions.

Daarbij hebben de nokken van deze nokkenas-opstelling, 10 gezien in de verplaatsings-richting ervan, een korte oplopende hoogte en daarachter een relatief lange aflopende hoogte ervan, ten behoeve van het met behulp van deze trillende boven-transducer, daarbij tevens fungerend als warmtebron, het bewerkstelligen van een micrometer hoge 15 laag gesmolten di-electrische substantie.In addition, the cams of this camshaft arrangement, viewed in the direction of movement thereof, have a short ascending height and thereafter a relatively long descending height thereof, for the purpose of using this vibrating upper transducer, thereby also serving as a heat source effecting a micrometer high layer of molten dielectric substance.

Figuur 26 toont een sterk vergroot gedeelte van de combinatie van e$n stripvormige drukplaat-aectie van de onder-nokkenas volgens de Figuur 25 en waarbij de nokken ervan, gezien in de verplaatsings-richting ervan een 20 korte oplopende hoogte en daarachter een relatief lange aflopende hoogte ervan bevatten ten behoeve van het mede met behulp van de trillende boven-transducer, daarbij tevens fungerend als warmtebron, het bewerkstelligen van een pm hoge laag gesmolten di-25 electrische substantie, zoals is aangegeven in de Figuur 27.Figure 26 shows a greatly enlarged portion of the combination of a strip-shaped pressure plate section of the lower camshaft of Figure 25 and with its cams, viewed in its direction of movement, a short ascending height and a relatively long one behind it for the purpose of co-using the vibrating upper transducer, thereby also serving as a heat source, to effect a µm high layer of molten dielectric substance, as indicated in Figure 27.

Figuur 28 toont na het in de Figuur 27 aangegeven zijn van zulk een laag gesmolten di-electrische substantie in een daarop volgende stripvormige afkoelsectie het 30 bewerkstelligen van een aanvulbare pm hoge laag ervan, welke verankerd is op de reeds opgebrachte di-electrische laag.Fig. 28 shows such a layer of molten dielectric substance in a subsequent strip-shaped cooling section after being shown in Fig. 27 to effect a replenishable high layer thereof, which is anchored on the already applied dielectric layer.

Figuur 29 toont een alternatieve uitvoering van de nok-profilering van de nokkenas-opstelling, welke is 35 aangegeven in de Figuur 25 en waarbij, gezien in de verdraai-richting ervan, een relatief lange toenemende hoogte en een daarop volgende korte afnemende hoogte ervan ten behoeve van tenminste mede daarmede plaatsvinden van 17 een semiconductor behandelings-proces wan de bovenlaag van de opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes, zoals is aangegeven in de Figuur 30 en waarbij onder andere het plaatsvinden van een 5 reinigings-proces van de in voorgaande tunnel-secties bewerkstelligde typisch nanometer grote uitsparingen (crevices) in de bovenwand van de opvolgende substraat-gedeeltes en zoals zeer sterk vergroot is aangegeven in de Figuren 31 en 32.Figure 29 shows an alternative embodiment of the cam profiling of the camshaft arrangement, which is shown in Figure 25 and wherein, viewed in the direction of rotation thereof, a relatively long increasing height and a subsequent short decreasing height thereof for the benefit of, at least partly as a result of, a semiconductor treatment process where the upper layer of the successive, semiconductor substrate parts moving below it, as indicated in Figure 30, and wherein, among other things, the occurrence of a cleaning process of the aforementioned. Tunnel sections typically created nanometer-sized recesses (crevices) in the upper wall of the subsequent substrate portions and, as greatly increased, is shown in Figures 31 and 32.

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Figuur 1 toont voor de semiconductor tunnel-opstelling 10 in een stripvormige sectie van het boventunnelblok 18 achter de daarin opgenomen stripvormige medium toevoer-inrichting 12 voor de combinatie van 15 vloeibaar draagmedium 14 en deeltjes van een semiconductor substantie 16 in vaste toestand ervan een in een met vloeibaar medium 32 gevuld compartiment 20 van het uitwisselbare stripvormige blok 22 opgenomen zich verdraaiende nokkenas-opstelling 24, bevattende een 20 stripvormige drukwandsectie 26, met daarin opgenomen een dunwandig electrisch verwarmings-element 28 ten behoeve van het daarmede tenminste verdampen van het toegevoerde vloeibare draagmedium 14 en waarbij met behulp van deze verdraaiende nokkenas 24 het tevens onderhouden van een 25 typisch laag-frequente pulseer-conditie van deze drukwandsectie 26 onder het daarmede ononderbroken plaatsvinden van een semiconductor behandelings-proces van de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes 30.Figure 1 shows for the semiconductor tunnel arrangement 10 in a strip-shaped section of the upper tunnel block 18 behind the strip-shaped medium supply device 12 incorporated therein for the combination of liquid carrier medium 14 and particles of a solid-state semiconductor substance 16 in a solid state compartment 20 of exchangeable strip-shaped block 22 filled with liquid medium 32 and rotating camshaft arrangement 24, comprising a strip-shaped pressure wall section 26, containing a thin-walled electric heating element 28 for the purpose of at least evaporating the supplied liquid carrier medium 14 and wherein with the aid of this rotating camshaft 24 also maintaining a typical low-frequency pulsing condition of this pressure wall section 26 while a semiconductor treatment process of the successive, continuously moving semiconductor substrate-g moving underneath it is taking place. parts 30.

30 De medium toevoer-inrichting 12 is gedetailleerd aangegeven en omschreven in de gelijktijdig met deze Octrooi-aanvrage ingediende Octrooi-aanvrage Mo. 4.The medium feed device 12 is detailed and described in the patent application Mo filed simultaneously with this Patent Application. 4.

Figuren 2-4 en 2& tonen daarbij sterk vergroot het door verdamping van het vloeibare draagmedium 14 ononderbroken 35 plaatsvinden van de opbouw van een micrometer hoge di-electrische substantie 16 op de reeds in een voorgaand tunnel-gedeelte opgebouwde relatief hoge laag 36 ervan.Figs. 2-4 and 2 & i show a greatly enlarged view of the uninterrupted occurrence of the build-up of a micrometer-high dielectric substance 16 on its relatively high layer 36 already built up in a preceding tunnel section.

Figuren 34 en 3B tonen daarbij sterk vergroot het ononderbroken plaatsvinden van de opbouw van een 18 micrometer hoge laag di-electr.ische substantie 16 op de reeds in een voorgaand tunnel-gedeelte opgebouwde micrometer hoge laag 36.Figures 34 and 3B show greatly increased the uninterrupted occurrence of the construction of an 18-micron high layer of dielectric substance 16 on the micron-high layer 36 already built up in a preceding tunnel section.

Figuur 4 toont de in de Figuur 1 aangegeven nokkenas-5 opstelling 24 in het midden-gedeelte van een stripvormig compartiment 20 van een uitwisselbaar blok 22, welke drukdicht is bevestigd op het boventunnelblok 18 en waarbij eronder in het onder tunnel blok 38 een eveneens met vloeibaar medium 32 gevuld stripvormig onder-10 compartiment 40 van zulk een uitwisselbaar onderblok 42 met als boven-gedeelte ervan een stripvormige, in hoogterichting verplaatsbaar drukwand-gedeelte 44 van dit blok ten behoeve van het met behulp van het opvolgend toe- en afvoeren van het vloeibare medium 32. naaar en vanaf 15 dit compartiment 40 het daarbij onderhouden van een opvolgend op- en neerwaarts verplaatsen ervan en daarmede van de ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes 30 onder typisch een mechanisch contact ermede ten behoeve van het daarmede 20 plaatsvinden van een semiconductor behandelings-proces van deze opvolgende substraat-gedeeltes onder de combinatie van een typisch hoog-frequent trillend stripvormig onderwand-gedeelte 46 van het uitwisselbare bovenblok 22 en het laag-frequent pulserend stripvormig 25 bovenwand-gedeelte 44 van het ondertunnelblok 38.Figure 4 shows the camshaft arrangement 24 shown in Figure 1 in the middle portion of a strip-shaped compartment 20 of an interchangeable block 22, which is pressure-tightly mounted on the upper tunnel block 18 and with a lower part of the lower block 38 liquid medium 32 filled strip-shaped lower compartment 40 of such an interchangeable lower block 42 having as its upper part a strip-shaped, height-displaceable pressure wall portion 44 of this block for the purpose of the subsequent supply and removal of the liquid medium 32. after and from this compartment 40, thereby maintaining a subsequent up and down movement thereof and therewith of the continuous semiconductor substrate portions 30 moving along it, typically with a mechanical contact with it for the purpose of taking a 20 semiconductor treatment process of these successive substrate portions under the combination of ee n typical high-frequency vibrating strip-shaped lower wall portion 46 of the exchangeable upper block 22 and the low-frequency pulsating strip-shaped upper wall portion 44 of the sub-tunnel block 38.

Figuur 5 toont de nokkenas-opstelling 24 volgens de Figuur 4, waarbij echter de positie ervan, gezien in de verplaatsingsrichting van deze opvolgende substraat-gedeeltes, in het achter-gedeelte van dit compartiment 30 ten behoeve van het bijdragen in het onderhouden van een contactloze conditie van de zich op deze opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes opgebrachte laag van zulke deeltjes 16 van een di-electrische substantie met deze drukwandsectie 26.Figure 5 shows the camshaft arrangement 24 according to Figure 4, however, its position, viewed in the direction of movement of these successive substrate portions, in the rear portion of this compartment 30 for contributing to maintaining a contactless condition of the layer of such particles 16 of a dielectric substance applied to these successive, semiconductor substrate sections moving underneath it, with this pressure wall section 26.

35 Figuren 6^1 t/111 EI tonen voor de nokkenas- opstellingen 24, welke zijn aangegeven in de Figuren 4 en 5, nokken 50 met een zodanige profilering ervan, dat daarmede het nokgedeelte 52 bevattende een relatief grote 19 lengte ervan ten behoeve van het daarmede bewerkstelligen van een tijdelijke langzame opwaartse verplaatsing van de drukwand-sectie 26 plaats vindt, en met het korte nok-gedeelte 54 een daarop-volgende snelle neerwaartse 5 verplaatsing ervan geschiedt ten behoeve van het ononderbroken plaatsvinden van een optimaal opbreng-proces voor deze deeltjes 16 van de di-electrische substantie.Figures 6 ^ 1 to 111 show EI for the camshaft arrangements 24, which are shown in Figures 4 and 5, cams 50 with such a profiling that the cam portion 52 comprising a relatively large length thereof for the purpose of thereby effecting a temporary slow upward movement of the pressure wall section 26, and with the short cam portion 54 a subsequent rapid downward movement thereof takes place for the uninterrupted occurrence of an optimum application process for this particles 16 of the dielectric substance.

Figuren 6^^ t/m EÜ tonen als alternatieve uitvoering van deze nokken een zodanige profilering ervan, dat 10 daarbij het daarmede bewerkstelligen van een snelle opwaartse en een daarop-volgende langzame neerwaartse verplaatsing van deze drukwand-sectie 26 ten behoeve van het met deze nokkenas-opstelling plaatsvinden van een optimaal semiconductor behandelings-proces, zoals onder 15 andere reinigen, etsen, strippen of spoelen.Figs. 6 to 6 show, as an alternative embodiment of these cams, a profiling thereof such that thereby effecting a rapid upward and a subsequent slow downward displacement of this pressure wall section 26 for the purpose of camshaft arrangement of an optimum semiconductor treatment process, such as cleaning, etching, stripping or rinsing.

Figuur 7 toont in een gedeelte van de semiconductor tunnel-opstelling 10 een stripvormige transducer-opstelling 58, welke is opgenomen in een uitwisselbaar stripvormig boventunnelblok-gedeelte 22 en zulks tezamen 20 met ervóór een stripvormige inrichting 12' ten behoeve van een ononderbroken toevoer van de combinatie van vloeibaar draagmedium 14 en deeltjes van een semiconductor substantie in vaste vorm 16 of in vloeibare vorm 56 ervan en erachter een stripvormige afvoersectie 60 ten behoeve 25 van de afvoer van het met behulp van deze transducer verdampte vloeibare draagmedium 14.Figure 7 shows in a portion of the semiconductor tunnel arrangement 10 a strip-shaped transducer arrangement 58, which is included in an interchangeable strip-shaped upper tunnel block section 22 and this together with a strip-shaped device 12 'in front of an uninterrupted supply of the combination of liquid carrier medium 14 and particles of a semiconductor substance in solid form 16 or in liquid form 56 thereof and behind it a strip-shaped discharge section 60 for the discharge of the liquid carrier medium 14 evaporated with the aid of this transducer.

Figuur 8 toont zeer sterk vergroot de doorsnede over de lijn 8-8 van de Figuur 7 terplaatse van de onderwand van de warmte-isolerende laag 62 in het boven-gedeelte 30 van het transducer-compartiment 20 tussen de daarin opgenomen toe- en afvoergroef 64 en 66 voor gasvormig medium 68 ten behoeve van het mede met behulp van stromen gasvormig medium door de multi naast elkaar gelegen groeven 70 tussen deze toe- en af voer groeven het vermijden 35 van een mechanisch contact van deze transducer 58 met deze laag 62.Figure 8 shows a greatly enlarged cross-section along the line 8-8 of Figure 7 of the bottom wall of the heat-insulating layer 62 in the upper portion 30 of the transducer compartment 20 between the supply and discharge grooves 64 contained therein and 66 for gaseous medium 68 for the co-flow of gaseous medium through the multi-adjacent grooves 70 between these supply and discharge grooves, avoiding mechanical contact of this transducer 58 with this layer 62.

Met behulp van deze, mede in dwarsrichting uitstrekkende groeven 70 in combinatie met deze trillende transducer 58 20 het daarbij mede onderhouden van een micrometer hoog, met gasvormig medium gevuld gedeelte tussen deze laag 62 en deze transducer 58 onder het daarby onderhouden van zulk een mechanisch contactloze conditie van deze trillende 5 transducer in dit transducer-blok 22'.With the aid of these co-extending grooves 70 in combination with this vibrating transducer 58, the maintenance of a micrometer-high section filled with gaseous medium between this layer 62 and this transducer 58 while maintaining such a mechanically contactless one. condition of this vibrating transducer in this transducer block 22 '.

Daarbij de ononderbroken toevoer van het gasvormige medium 68 via de toevoer leiding 72 ter plaatse van het begin-gedeelte van dit compartiment 20 en ter plaatse van het eind-gedeelte ervan de afvoer van dit medium via de 10 af voer leiding 74 ten behoeve van het mede bijdragen in het tijdens de werking van deze tranducer 58 onderhouden van een toenemende hoogte van het bovenspleet-gedeelte 76 onder deze transducer in de richting van de erachter opgenomen stripvormige afvoersectie 66 voor het verdampte 15 medium.The continuous supply of the gaseous medium 68 via the supply line 72 at the start portion of this compartment 20 and at the end portion thereof the discharge of this medium via the discharge line 74 for the purpose of also contribute to maintaining an increasing height of the upper slit portion 76 below this transducer in the direction of the strip-shaped discharge section 66 for the evaporated medium contained behind this transducer.

Zulk een warm te-isolerend blok 62 fungeert daarbij tevens ten behoeve van het beperken van warmte-verlies van deze transducer 58.Such a heat-insulating block 62 also functions for the purpose of limiting heat loss of this transducer 58.

Zulk een semiconductor boven-transducer 58 is daarbij 20 aangesloten op een electrische generator, welke is opgenomen in de semiconductor facility, gelijktijdig ingediende Nederlandse Octrooi-aanvrage No. 7 van de aanvrager, en waarin het ononderbroken plaatsvinden van de opwekking en vervolgens het onderhouden van een 25 electriscne stroom met een mogelijke lage tot een zeer hoge tril-frequentie aan de uitgangszijde ervan.Such a semiconductor upper transducer 58 is thereby connected to an electric generator, which is included in the semiconductor facility, co-pending Dutch Patent Application no. 7 of the applicant, and in which the uninterrupted occurrence of the generation and then the maintenance of an electric current with a possible low to a very high vibration frequency on the output side thereof.

Figuur 9 toont de opname in de semiconductor tunnel-opstelling 10 ter plaatse van het centrale semiconductor behandelings-gedeelte 124 met in dwarsrichting aan 30 weerszijde ervan de mediumslot-opstelling 126, van de stripvorraige transducer-opstelling 58, welke als onderdeel van een uitwisselbaar transducerblok 84 is opgenomen in het boventunnelblok 18.Figure 9 shows the incorporation into the semiconductor tunnel arrangement 10 at the location of the central semiconductor treatment section 124 with the medium slot arrangement 126, transversely on either side thereof, of the strip-shaped transducer arrangement 58, which is part of an exchangeable transducer block 84 is included in the upper tunnel block 18.

Daarbij de combinatie van een gedeeltelijk boven-aanzicht 35 en doorsnede van het uitwisselbare transducer-huis 78, waarin de opname van een aantal naast elkaar gelegen dunwandige cilindrische di-electrische schijven 80 en waarbij het stripvormige onder-electrodegedeelte 82 ervan 21 een deel is van het onderwand-gedeelte van het uitwisselbare metalen transducerblok 84.The combination of a partial plan view 35 and sectional view of the interchangeable transducer housing 78, in which the accommodation of a number of adjacent thin-walled cylindrical dielectric disks 80 and wherein the strip-shaped lower electrode portion 82 thereof 21 forms part of the bottom wall portion of the exchangeable metal transducer block 84.

De boven-electrodeplaat 86 van dit blok bevat daarbij de electrische aansluiting 88 ter plaatse van een 5 uiteinde ervan ten behoeve van de aansluiting van deze plaat op een electrische generator, welke is aangegeven en omschreven in de bijgaande Nederlandse Octrooiaanvrage No. 7 van de aanvrager, en waarin de opwekking van een electrische spanning geschiedt onder een tril-10 conditie ervan, met aldus tijdens de werking van deze tunnel-opstelling 10 het continue onderhouden van zulk een tril-conditie van deze transducer-opstelling.The upper electrode plate 86 of this block herein comprises the electrical connection 88 at the location of one end thereof for the connection of this plate to an electric generator, which is indicated and described in the accompanying Netherlands Patent Application No. 7 of the applicant, and in which the generation of an electrical voltage is effected under a vibrating condition thereof, thus continuously maintaining such a vibrating condition of this transducer arrangement during the operation of this tunnel arrangement.

Figuur 10 toont daarbij vergroot de doorsnede over de lijn 10-10 van de transducer-opstelling 78 volgens de 15 riguur 9.Figure 10 shows an enlarged sectional view along the line 10-10 of the transducer arrangement 78 according to the rigging 9.

Figuur 11 toont in een alternatieve uitvoering 78' van deze transducer-opstelling een tweetal naast elkaar gelegen rijen van zulke mini cilindrische di-relectrische schijven 80' 20 Figuur 12 toont in een andere alternatieve uitvoering van deze transducer-opstelling een aantal in dwarsrichting ervan naast elkaar gelegen rechthoekige dunne di-electrische schijven 80 ' ' .Figure 11 shows, in an alternative embodiment 78 'of this transducer arrangement, two adjacent rows of such mini-cylindrical dielectric discs 80'. Figure 12 shows, in another alternative embodiment of this transducer arrangement, a number of transversely thereof in addition to superimposed rectangular thin dielectric discs 80 ''.

Figuur 13 toont daarbij in zulk een transducer-25 opstelling 78'’’ een tweetal naast elkaar gelegen rijen van zulke rechthoekige di-electrische schijven δΟ'''.Fig. 13 shows in such a transducer arrangement 78 '' 'two adjacent rows of such rectangular dielectric disks δΟ' ''.

Binnen het kader van de uitvinding kan voor zulk een transducer-opstelling tevens slechts één langwerpige dunne di-electrische plaat worden toegepast.Within the scope of the invention, for such a transducer arrangement, only one elongated thin dielectric plate can also be used.

30 Figuur 14 toont de medium toevoer-inrichting 12, welke is aangegeven in de Figuur 1, met daarop op de afvoerzijde ervan.de aansluiting van een in het boventunnelblok 18 opgenomen uitwisselbare stripvormige transducer-opstelling 58 ten behoeve van het tenminste 35 daarmede plaatsvinden van verdamping van dit typisch laag-kokende vloeibare draagmedium 14 en afvoer ervan via een daarop-volgende stripvormige afvoersectie 60 van dit blok en waarbij gelijktijdig het tevens opbrengen van 22 25 tenminste deze deeltjes van een semiconductor substantie 16 op deze eronderlangs verplaatsende semiconductor substraat-gedeeltes 30, in een volgende stripvormige sectie van de onderwand 90 van het boventunnelblok 18 de opname van een mini stripvormig electrisch verwarmings-30 element 92 ten behoeve van het daarmede tenminste nagenoeg uitsluitend en ononderbroken plaatsvinden van het smelten van de op deze opvolgende substraat-gedeeltes 30 neergeslagen deeltjes van een vaste semiconductor substantie 16 en in een daarop-volgend gedeelte van dit 35 blok de opname van een stripvormige afkoelsectie 94 ten behoeve van de bewerkstelliging van een micrometer hoge laag 96 van deze semiconductor substantie 16.Figure 14 shows the medium supply device 12, which is indicated in Figure 1, with on its discharge side the connection of an exchangeable strip-shaped transducer arrangement 58 accommodated in the upper tunnel block 18 for the purpose of at least 35 evaporation of this typically low-boiling liquid carrier medium 14 and discharge thereof via a subsequent strip-shaped discharge section 60 of this block and simultaneously applying at least these particles of a semiconductor substance 16 to these semiconductor substrate portions moving along it , in a subsequent strip-shaped section of the bottom wall 90 of the upper tunnel block 18 the accommodation of a mini-strip-shaped electric heating element 92 for the purpose of at least substantially and continuously taking place the melting of the deposits deposited on these successive substrate sections 30 particles of a solid semiconductor substance 1 6 and in a subsequent part of this block the inclusion of a strip-shaped cooling section 94 for the purpose of creating a micrometer-high layer 96 of this semiconductor substance 16.

Daar bij is ook deze boven-transducer aangesloten op de 15 electrische generator, welke gedetailleerd is aangegeven en omschreven in de gel ijkt ijdig ingediende Nederlandse Octrooi-aanvrage No. 7 van de aanvrager.In addition, this upper transducer is also connected to the electric generator, which is detailed and described in the simultaneously filed Dutch Patent Application no. 7 from the applicant.

Figuren 15A, B en C tonen alternatieve uitvoeringen van dit in het boventunnelblok 18 op.genomen stripvormige 20 electrische verwarmings-element 92,'welke daarbij is omgeven door een di-electrische warmte-isolerende omhulling 96, bevattende een mini warmte-dóorlaatgroef 98, welke zich in benedenwaartse richting uitstrekt naar de onderwand ervan.Figures 15A, B and C show alternative embodiments of this strip-shaped electric heating element 92 accommodated in the upper tunnel block 18, which element is surrounded by a dielectric heat-insulating covering 96, comprising a mini heat-permeable groove 98, which extends downwardly to its bottom wall.

25 Figuren 16^» B en C tonen het met behulp van het verwarmings-element 92 plaatsvinden van het samensmelten van de micrometer hoge laag 100 van deeltjes van een vaste semiconductor substantie 16 naar een micrometer hoge vloeibare laag 102 op een micrometer hoge en in een 30 voldoende mate tijdelijke vloeibare hechtsubstantie 104, welke reeds in een voorgaand bovenspleet-gedeelte is opgebracht op de opvolgende, ononderbroken eronderlangs verplaatsende metalen band-gedeeltes 106 als een tijdelijke semiconductor onderlaag van de opvolgende 35 semiconductor substraat-gedeeltes en waarbij in een volgende stripvormige afkoel-inrichting 94, welke is opgenomen in het boventunnelblok 18 en aangegeven in de Figuur 14, door afkoeling ervan de bewerkstelliging van 23 typisch een micrometer hoge di-electrische vaste laag 108, welke verankerd is op deze tijdelijke hechtlaag 104.Figures 16, B and C show the melting of the micrometer high layer 100 of particles from a solid semiconductor substance 16 to a micrometer high liquid layer 102 on a micrometer high and in a 30 is a sufficient amount of temporary liquid adhesive substance 104, which has already been applied in a preceding upper slit portion to the subsequent, continuously moving metal band portions 106 therebetween as a temporary semiconductor substrate of the subsequent semiconductor substrate portions and wherein in a subsequent strip-shaped cooling device 94, which is contained in the upper tunnel block 18 and shown in Figure 14, by cooling it, the establishment of 23 typically a micrometer high dielectric solid layer 108 anchored to this temporary adhesive layer 104.

Figuur 17 toont de opname van zulk een stripvormige 5 transducer-opstelling 58 in het transducer- compartiment 20 van het uitwisselbare transducerblok 136, welke is opgenomen in het boventunnel blok 18 en waar bij deze transducer verder zodanig is uitgevoerd, dat het mede fungeren ervan als een stripvormige, typisch laag-10 frequent pulserende drukwand 110 en waarby daartoe het opvolgend plaatsvinden van de toe- en afvoer via de leiding 112 van typisch gasvormig medium 68 naar en vanaf dit compartiment.Figure 17 shows the incorporation of such a strip-shaped transducer arrangement 58 into the transducer compartment 20 of the interchangeable transducer block 136, which is included in the upper tunnel block 18 and where, furthermore, this transducer is designed such that its co-functioning as a a strip-shaped, typically low-frequency pulsed pressure wall 110, and whereupon for that purpose the subsequent take-up and delivery via the line 112 of typical gaseous medium 68 to and from this compartment.

Figuur 18 toont een stripvormige, typisch tenminste 15 laag-frequent pulserende onder-transducer 114, waarbij de opname ervan in het transducer-compartiment 116 van het stripvormige uitwisselbare onder-transducerblok 118, welke is opgenomen in het ondertunnelblok 38, ten behoeve van het daarmede ononderbroken plaatsvinden van 20 het meepulseren/trillen van de opvolgende, ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes 30 met een relatief grote dikte ervan, zoals daarbij de toepassing van een tenminste 0,1 mm dikke ononderbroken metalen band 106 als een tijdelijke 25 semiconductor onderlaag ervan, zoals is aangegeven in de andere Figuren van deze Octrooi-aanvrage.Fig. 18 shows a strip-shaped, typically at least 15 low-frequency pulsed lower-transducer 114, the incorporation thereof in the transducer compartment 116 of the strip-shaped exchangeable lower-transducer block 118, which is included in the sub-tunnel block 38, for the benefit thereof. continuous occurrence of the co-pulsing / vibrating of the subsequent semiconductor substrate portions 30 moving continuously along it, having a relatively large thickness thereof, such as the use of an at least 0.1 mm thick continuous metal strip 106 as a temporary semiconductor bottom layer thereof , as indicated in the other Figures of this Patent Application.

Figuur 19 toont de stripvormige transducer-opstelling 114 volgens de Figuur 18 en waarbij deze transducer tevens fungeert als een stripvormige 30 drukwand ten behoeve van het met behulp van het zeer laag-frequent pulserend toe- en afvoeren van het gasvormige medium 68 via de leiding 120 naar en vanaf het transducer-compartiment 116 in transducer-blok 118' mede onderhouden van een pulseer-conditie van deze 35 transducer met een uiterst lage pulseer-conditie ervan.Figure 19 shows the strip-shaped transducer arrangement 114 according to Figure 18 and wherein this transducer also functions as a strip-shaped pressure wall for the purpose of supplying and discharging the gaseous medium 68 via the conduit 120 with the aid of the very low-frequency pulsed supply and discharge. to and from the transducer compartment 116 in transducer block 118 'co-maintaining a pulsating condition of this transducer with an extremely low pulsing condition thereof.

Daarbij zulk een onder-transducer ten behoeve van het daarmede onderhouden van de combinatie van een typisch HF tril- en LF pulseer-conditie van de opvolgende, 24 ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes.In addition, such a lower transducer for maintaining therewith the combination of a typical HF vibration and LF pulsing condition of the subsequent 24 continuous semiconductor substrate portions moving along it.

Ook deze transducer-opstelling is daarbij aangesloten op een inrichting, waarin het ononderbroken plaatsvinden 5 van de opwekking van een electrische trilling met een zodanige frequentie ervan, dat deze toepasbaar is voor deze transducer.This transducer arrangement is also connected to a device in which the uninterrupted occurrence of the generation of an electric vibration with a frequency thereof is such that it is applicable to this transducer.

Deze electrische trilling-opwekinrichting is gedetailleerd aangegeven en omschreven in de gelijktijdig 10 ingediende Nederlandse Octrooi-aanvrage No 7 van de aanvrager.This electric vibration generating device is specified and described in detail in the Netherlands Patent Application No. 7 filed simultaneously with the applicant.

Figuur 20 toont voor deze semiconductor tunnel-opstelling 10 de combinatie van een stripvormige hoogfrequent trillende boven-transducer 58, welke is 15 opgenomen in het stripvormige boven-transducerblok 22 in het boventunnelblok 18 en een daaronder gelegen stripvormige typisch laag-frequent pulserende onder-transducer 114, welke is opgenomen in het onder-transducerblok 118 als een uitwisselbaar gedeelte van 20 het ondertunnelblok 38.Figure 20 shows for this semiconductor tunnel arrangement 10 the combination of a strip-shaped high-frequency vibrating upper transducer 58, which is included in the strip-shaped upper transducer block 22 in the upper tunnel block 18 and an underlying strip-shaped typical low-frequency pulsing lower transducer 114, which is included in the lower transducer block 118 as an interchangeable portion of the lower tunnel block 38.

Daarbij elke gewenst wordende semiconductor uitvoering en werkwijzen van deze combinatie van een onder- en boven-transducer.In addition, any desired semiconductor design and methods of this combination of a top and bottom transducer.

Ook deze uitwisselbare boven- en onder-transducers 25 22 en 114 zijn elk aangesloten op zulk een electrische tril-opwekinrichting, met daarbij elke mogelijke vorm en opbouw van zulk een opgewekte electrische trilling voor elk van deze beide transducers.These interchangeable upper and lower transducers 22 and 114 are also each connected to such an electrical vibration-generating device, with every possible shape and construction of such an generated electrical vibration for each of these two transducers.

Zulks ten behoeve van het ononderbroken plaatsvinden 30 van elk mogelijk semiconductor behandelings- of opbouw-proces voor de opvolgende, ononderbroken ertussendoor verplaatsende semiconductor substraatgedeeltes 30.Such for the purpose of the uninterrupted occurrence of any possible semiconductor treatment or build-up process for the successive, uninterrupted, semiconductor substrate portions 30 moving therebetween.

Figuur 21 toont in een stripvormige sectie van de semiconductor tunnel-opstelling 10 in het ondertunnelblok 35 38 de opname van zulk een in het uitwisselbare transducer- blok 118 opgenomen stripvormige ondertransducer-opstelling 114 en in het boventunnelblok 18 de opname van een uitwisselbaar stripvormig blok 22, waarin in het 25 compartiment 20 ervan de opstelling van een roterende nokkenas-opstelling 24 ten behoeve van het typisch hoogfrequent trillend op en neer verplaatsen van het zich eronder bevindende drukwand-gedeelte 26 ervan en waarbij 5 aet behulp van deze laag-frequent pulserende onder-transducer 114 het mede onderhouden van een laag-frequente pulseer-conditie van de opvolgende, ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes 30.Figure 21 shows in a strip-shaped section of the semiconductor tunnel arrangement 10 in the sub-tunnel block 38 the incorporation of such a strip-shaped sub-transducer arrangement 114 included in the interchangeable transducer block 118 and in the upper tunnel block 18 the inclusion of an interchangeable strip-shaped block 22 in which, in its compartment 20, the arrangement of a rotating camshaft arrangement 24 for the typical high-frequency vibrating movement up and down of the pressure wall portion 26 thereof beneath it, and wherein using this low-frequency pulsating bottom transducer 114 co-maintaining a low-frequency pulsing condition of the subsequent semiconductor substrate portions 30 moving continuously above it.

10 Daarbij verder de mogelijke navolgende condities voor deze ondertransducer-opstelling: a) een laag-frequente pulseer-conditie van deze transducer en daarmede van de opvolgende, ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes 30, zoals 15 deze eveneens is aangesloten op zulk een electrische opwek-inrichting voor een laag-frequent pulserende electrische spanning; en b) het onderhouden van een ultra-laagfrequente pulseer-conditie ervan met behulp van de opvolgende toe- en afvoer 20 van het gasvormige medium 68 naar en vanaf het onder-compartiment 116 voor deze transducer.Furthermore, the possible following conditions for this sub-transducer arrangement are furthermore: a) a low-frequency pulsing condition of this transducer and therewith of the successive continuous semiconductor substrate portions 30 moving along it, as it is also connected to such an electrical generating device for a low-frequency pulsed electrical voltage; and b) maintaining an ultra-low-frequency pulsing condition thereof by means of the subsequent supply and discharge 20 of the gaseous medium 68 to and from the lower compartment 116 for this transducer.

Figuur 22 toont de opname in het boventunnelblok 18 van de toevoer-inrichting 12' voor de gescheiden toevoer van een laag percentage hoog-kokend vloeibaar draag-25 : medium 14' en de toevoer van de combinatie van een hoog percentage laag-kokend vloeibaar draagmedium 14 en deeltjes van een semiconductor substantie 16 in een vaste vorm ervan en waarbij met behulp van een eerste, daarin opgenomen boven-transducer 58 door verdamping van het 30 laag-kokende vloeibare draagmedium 14 het bewerkstelligen van neerslag van een micrometer hoge laag 120 van de combinatie van het hoog-kokende vloeibare draagmedium 14' en deze deeltjes van de vaste substantie 16 op de opvolgende, ononderbroken eronderlangs verplaatsende 35 semiconductor substraat-gedeeltes 30.Figure 22 shows the incorporation in the upper tunnel block 18 of the feeder 12 'for the separate supply of a low percentage of high-boiling liquid carrier medium 14' and the supply of the combination of a high percentage of low-boiling liquid carrier medium 14 and particles of a semiconductor substance 16 in a solid form thereof and wherein with the aid of a first upper transducer 58 incorporated therein by evaporation of the low-boiling liquid carrier medium 14, causing precipitation of a micrometer-high layer 120 of the combination of the high-boiling liquid carrier medium 14 'and these particles of the solid substance 16 on the subsequent semiconductor substrate portions 30 moving continuously underneath.

Figuur 23 toont de transducer-opstelling 58 volgens de Figuur 22, met daarachter in het boventunnelblok 18 de opname van een tweede transducer 58' ten behoeve van het 26 daarmede verdampen van dit hoger-kokende vloeibare draagmedium 14' uit deze opgebrachte laag 120 onder het plaatsvinden van uitdrijving daaruit van het verdampte medium en vervolgens door het typisch mede fungeren ervan 5 als oven-sectie daarmede onder het eind-gedeelte 28 ervan het plaatsvinden van het samensmelten van de resterende micrometer hoge laag van deeltjes 16 van deze semiconductor substantie onder de vorming van een vloeibare micrometer hoge laag 122 ervan ten behoeve van 10 in een volgend tunnel-gedeelte door afkoeling ervan de bewerkstelliging van een micrometer hoge laag van deze di-electrische substantie in een vaste vorm ervan.Fig. 23 shows the transducer arrangement 58 according to Fig. 22, with the upper tunnel block 18 behind it accommodating a second transducer 58 'for the purpose of vaporizing this higher-boiling liquid carrier medium 14' from this applied layer 120 below the applied layer occurrence of expulsion therefrom of the evaporated medium and then, by typically co-operating as an oven section therewith, under the end portion 28 thereof, the fusion of the remaining micrometer high layer of particles 16 of this semiconductor substance to form of a liquid micrometer high layer 122 thereof for the purpose of in a subsequent tunnel section by cooling thereof the realization of a micrometer high layer of this dielectric substance in a solid form thereof.

Als alternatief het daar bij met behulp van deze tweede transducer 58' het uitsluitend plaatsvinden van het 15 verdampen van dit hoog-kokende vloeibare draagmedium 14' onder de vorming van deze micrometer hoge laag van deze deeltjes 16 en waarbij in een volgend tunnel-gedeelte het plaatsvinden van zulk een oven-behandeling van deze laag onder de vorming van zulk een micrometer hoge laag 120 20 van deze di-electrische substantie in een vloeibare vorm ervan.Alternatively, with the aid of this second transducer 58 ', exclusively the evaporation of this high-boiling liquid carrier medium 14' takes place while forming this micrometer-high layer of these particles 16 and wherein in a subsequent tunnel section the such an oven treatment of this layer to form such a micrometer-high layer 120 of this dielectric substance in a liquid form thereof.

Figuur 24 toont in deze tunnel-opstelling 10 tenminste plaatselijk in het boventunnelblok 18 de opname van een aantal opvolgende stripvormige semiconductor behandelings-25 secties 128 ervan, met daarin de opstelling van zulk een stripvormige boven-transducer 58 met ervóór zulk een stripvormige inrichting 12' ten behoeve van de ononderbroken toevoer van de combinatie van vloeibaar draagmedium 14 en deeltjes van een semiconductor 30 substantie 16 in vaste vorm , typisch een di-electrische substantie, en daarachter zulk een stripvormige afvoer-sectie 60 ten behoeve van de afvoer van het met behulp van deze transducer-opstelling 58 door verdamping van dit vloeibare draagmedium 14 bewerkstelligde dampvormige 35 medium, met ertussen de opname van een stripvormige mediumslot-opstelling 130 onder toepassing van een tweetal opvolgende stripvormige toevoergroeven 132 voor het typisch gasvormig slotmedium 134 ten behoeve van het 27 gescheiden houden van deze opvolgende semiconductor behandelings-secties 128 en waarbij pas na het bewerkstelligd zijn van een aantal van deze opgebouwde boven elkaar gelegen semiconductor lagen 34 van deeltjes 5 van deze semiconductor substantie 16 het plaatsvinden van zulk een oven-behandeling ervan ten behoeve van tenminste mede het samensmelten van deze opgebrachte deeltjes 16 van de di-electrische substantie.Figure 24 shows in this tunnel arrangement 10 at least locally in the upper tunnel block 18 the inclusion of a number of successive strip-shaped semiconductor treatment sections 128 thereof, including the arrangement of such a strip-shaped upper transducer 58 with such a strip-shaped device 12 'in front of it for the uninterrupted supply of the combination of liquid carrier medium 14 and particles of a semiconductor substance 16 in solid form, typically a dielectric substance, and behind such a strip-shaped discharge section 60 for the discharge of the of this transducer arrangement 58 vaporized medium produced by evaporation of this liquid carrier medium 14, with the interposition of a strip-shaped medium slot arrangement 130 using two successive strip-shaped feed grooves 132 for the typical gaseous lock medium 134 for the purpose of the 27 separated love this subsequent semiconductor treatment sections 128 and wherein only after a number of these superimposed semiconductor layers 34 of particles 5 of this semiconductor substance 16 have been effected, is such a furnace treatment carried out for the purpose of at least co-fusing these applied particles. particles 16 of the dielectric substance.

In een gunstige werkwijze vindt daarbij na het 10 bewerkstelligd zijn van zulk een micrometer hoge totaal-laag van zulk een typisch di-electrische substantie met behulp van zulk een mini stripvormig electrisch verwarmings-element, welke is opgenomen in de onderwand van het boventunnelblok 18, het samensmelten ervan plaats 15 en zulks tevens met het boven-gedeelte van een reeds opgebrachte laag van deze semiconductor substantie in een vaste vorm ervan of een semiconductor substantie in een vloeibare vorm ervan, zoals onder andere een hecht-substantie.In a favorable method, after such a micrometer-high total layer of such a typical dielectric substance has been achieved, such a mini-strip-shaped electric heating element is included in the bottom wall of the upper tunnel block 18, the fusing thereof takes place and this also with the upper part of an already applied layer of this semiconductor substance in a solid form thereof or a semiconductor substance in a liquid form thereof, such as, among other things, an adhesive substance.

20 Daar bij in een volgende tunnel-sectie door afkoeling ervan het bewerkstelligen van een micrometer hoge laag in een vaste toestand ervan.In addition, in a subsequent tunnel section by cooling it, effecting a micrometer high layer in a solid state thereof.

In een alternatieve uitvoering van zulk een transducer-opstelling fungeert het eindgedeelte ervan tevens als een 25 zodanige warmtebron, dat daarbij daarmede het reeds samensmelten van deze deeltjes di-electrische substantie en zulks mede met het boven-gedeelte van een reeds opgebrachte laag van al dan niet dezelfde semiconductor substantie plaats vindt.In an alternative embodiment of such a transducer arrangement, the end portion thereof also functions as a heat source such that the already fusing of these particles dielectric substance and this also with the upper part of an already applied layer of the same semiconductor substance does not occur.

30 In een andere alternatieve uitvoering van zulk een sectie van de tunnel-opstelling vindt reeds in een inrichting boven zulk een stripvormige medium toevoer-inrichting het daartoe plaatsvinden van een in voldoende mate vóör-verwarming van zulk een combinatie van 35 vloeibaar draagmedium en deeltjes van een semiconductor substantie in vaste vorm ervan.In another alternative embodiment of such a section of the tunnel arrangement, a device above such a strip-shaped medium supply device already takes place for this purpose a sufficient pre-heating of such a combination of liquid carrier medium and particles of a semiconductor substance in its solid form.

Verder zijn deze transducers eveneens aangesloten op zulk een electrische trilling-opwekinrichting, waarin 28 het ononderbroken plaatsvinden van de opwekking van de electrische trillingen met een zodanige frequentie ervan, dat deze voor zulk een transducer-opstelling toepasbaar is.Furthermore, these transducers are also connected to such an electric vibration generating device, in which the generation of the electric vibrations takes place uninterruptedly with such a frequency that it can be used for such a transducer arrangement.

5 Figuur 25 toont in een stripvormige sectie van het boventunnelblok 18 achter de opname daarin van zulk een stripvormige medium toevoer-inrichting 12 voor de combinatie van vloeibaar draagmedium 14 en deeltjes van een vaste semiconductor substantie 16 een stripvormig 10 uitwisselbaar blok 136, waarin de opname van een compartiment 138, bevattende zulk een stripvormige transducer-opstelling 58 en typisch de daarop-volgende medium-afvoersectie 60, met aansluiting daarop van een afvoer-systeem voor het met behulp van deze transducer 15 verdampte medium 68 ten behoeve van het onderhouden van een tenminste zeer hoog-frequente tril-conditie van het stripvormige onderwand-gedeelte van dit blok en waarbij onder dit blok 136 in het ondertunnelblok 38 eveneens de opname van een uitwisselbaar blok 140, bevattende 20 eveneens een stripvormig compartiment 142, waarin de opname van een nokkenas-opstelling 144 met daarboven het stripvormige drukwand-gedeelte 148 van dit blok 38 ten behoeve van het met behulp van toegevoerd vloeibaar medium 32 via de stripvormige toevoer-inrichting 146 in 25 dit ondertunnelblok 38 het bewerkstelligen en vervolgens onderhouden van een micrometer hoge film ervan tussen dit drukwand-gedeelte 148 en de opvolgende, ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes 30 ten behoeve van het daarmede ononderbroken 30 plaatsvinden van een semiconductor behandelings-proces mede onder tril-conditie van deze opvolgende semiconductor substraat-gedeeltes 30.Figure 25 shows in a strip-shaped section of the upper tunnel block 18 behind the accommodation therein of such a strip-shaped medium supply device 12 for the combination of liquid carrier medium 14 and particles of a solid semiconductor substance 16 a strip-shaped exchangeable block 136, in which the accommodation of a compartment 138, containing such a strip-shaped transducer arrangement 58 and typically the subsequent medium discharge section 60, with connection thereto of a discharge system for the medium 68 evaporated using this transducer 15 for the purpose of maintaining a at least very high-frequency vibration condition of the strip-shaped bottom wall portion of this block and wherein below this block 136 in the sub-tunnel block 38 also the accommodation of an exchangeable block 140, also comprising a strip-shaped compartment 142, in which the accommodation of a camshaft arrangement 144 with above it the strip-shaped pressure wall portion 148 of this block 38 for the purpose of m with the aid of supplied liquid medium 32 via the strip-shaped feed device 146 in this sub-tunnel block 38 the creation and subsequent maintenance of a micrometer-high film thereof between this pressure-wall portion 148 and the subsequent semiconductor substrate portions 30 moving continuously above it for the benefit of of a semiconductor treatment process taking place without interruption, also under the vibrating condition of these successive semiconductor substrate sections 30.

Daarbij hebben de nokken 150 van deze nokkenas-opstelling 144, gezien in de verplaatsings-richting ervan, 35 het navolgende: a) een korte oplopende hoogte en daarachter een relatief lange aflopende hoogte ervan ten behoeve van het daarmede onderhouden van een snelle opwaartse verplaatsing en een 29 daarop-volgende langzame neerwaartse verplaatsing van dit drukwand-gedeelte 148 en daarmede eveneens van deze opvolgende erbovenlangs verplaatsende semiconductor substraat-gedeeltes 30 ten behoeve van tenminste mede 5 een maximale neerslag van deze deeltjes 16 daarop onder de vorming daarop van een micrometer hoge laag ervan; b) een relatief lange oplopende hoogte en daarachter een korte aflopende hoogte ervan ten behoeve van het daarmede onderhouden van een langzame opwaartse verplaatsing en 10 een daarop-volgende snelle neerwaartse verplaatsing van dit drukwand-gedeelte 148 en daarmede eveneens van deze erbovenlangs verplaatsende semiconductor substraat-gedeeltes 30 ten behoeve van mede met behulp van toegevoerd vloeibaar semiconductor behandelings-medium 18 het 15 plaatsvinden van een optimale uitdrijving/verwijdering van deeltjes van een semiconductor substantie vanaf de bovenlaag van deze opvolgende substraat-gedeeltes en de daarin aangebrachte semiconductor uitsparingen(crevices) en een optimaal reinigings-, ets-, strip- en spoel-proces · 20 Deze transducer-opstelling 58 is daarbij eveneens aangesloten op zulk een inrichting, waarin het ononderbroken plaatsvinden van het opwekken van electrische trillingen met een daarvoor meest geeigende vorm en frequentie ervan, 25 Figuur 26 toont een sterk vergroot gedeelte van de combinatie van een stripvormige drukplaatsectie 148 van de onder- nokke nas 144 volgens de Figuur 25 en waar bij de nokken 150 ervan, gezien in de verplaatsings-richting ervan, een korte oplopende hoogte 152 en daarachter een relatief 30 lange aflopende hoogte 154 ervan bevatten ten behoeve van het mede met behulp van de trillende boven-transducer 136, daarby tevens fungerend als warmtebron, het bewerkstelligen van een micrometer hoge laag gesmolten di-electrische substantie op de reeds opgebrachte micrometer hoge laag 35 di-electrische substantie 158 in vaste vorm ervan, zoals is aangegeven in de Figuur 27.Thereby, the cams 150 of this camshaft arrangement 144, viewed in the direction of their movement, have the following: a) a short ascending height and thereafter a relatively long descending height thereof for the purpose of maintaining a rapid upward displacement therewith and 29 subsequent slow downward displacement of this pressure wall portion 148 and therewith also of these successive semiconductor substrate portions 30 moving along it for at least a maximum deposition of these particles 16 thereon, thereby forming a micrometer high layer thereon of it; b) a relatively long ascending height and thereafter a short descending height thereof for the purpose of maintaining a slow upward displacement therewith and a subsequent rapid downward displacement of this pressure wall portion 148 and thus also of this semiconductor substrate moving along it. portions 30 for the purpose of co-supplied liquid semiconductor treatment medium 18 for optimum extrusion / removal of particles of a semiconductor substance from the upper layer of these successive substrate portions and the semiconductor recesses arranged therein and an optimum cleaning, etching, stripping and rinsing process. This transducer arrangement 58 is also connected to such a device, in which the continuous occurrence of the generation of electrical vibrations with their most appropriate form and frequency, Figure 26 shows a strong increase The portion of the combination of a strip-shaped printing plate section 148 of the lower cam nas 144 according to Figure 25 and where at its cams 150, viewed in its direction of movement, a short ascending height 152 and behind it a relatively long descending height 154 thereof, for the purpose of co-using the vibrating upper transducer 136, also serving as a heat source, the effecting of a micrometer-high layer of molten dielectric substance on the already applied micrometer-high layer 35 of dielectric substance 158 in solid form thereof, as indicated in Figure 27.

Figuur 28 toont na het in de Figuur 27 aangegeven zijn van zulk een laag gesmolten di-electrische substantie in 30 een daarop-volgende stripvormige afkoelsectie het bewerkstelligen van een aanvulbare micrometer hoge laag 160 ervan, welke daarbij verankerd is op de reeds opgebrachte di-electrische laag 158.Fig. 28 shows such a layer of molten dielectric substance in a subsequent strip-shaped cooling section after being shown in Fig. 27 to effecting a replenishing micrometer-high layer 160 thereof, which is thereby anchored on the already applied dielectric layer 158.

5 Figuur 29 toont een alternatieve uitvoering van de nok-profilering van de nokkenas-opstelling 144, welke is aangegeven in de Figuur 25 en waarbij, gezien in de verdraai-richting ervan, een relatief lange toenemende hoogte 162 en een daarop volgende korte afnemende hoogte 10 164 van de nokken 160 ten behoeve van tenminste mede het daarmede plaatsvinden van een semiconductor behandelings-proces van de bovenlaag 166 van de opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes 30, zoals is aangegeven in de Figuur 30 en 15 waarbij onder andere het plaatsvinden van een reinigingsproces van de in voorgaande tunnelsecties bewerkstelligde typisch nanometer grote uitsparingen 168 (crevices) in de bovenwand 170 van de opvolgende substraat-gedeeltes 30 en zoals zeer sterk vergroot is aangegeven in de Figuren 31 20 en 32.Figure 29 shows an alternative embodiment of the cam profiling of the camshaft arrangement 144, which is shown in Figure 25, and wherein, viewed in the direction of rotation thereof, a relatively long increasing height 162 and a subsequent short decreasing height 164 of the cams 160 for at least in part the thereby taking place of a semiconductor treatment process of the upper layer 166 of the subsequent semiconductor substrate portions 30 moving underneath it, as indicated in Figs. 30 and 15, inter alia taking place of a cleaning process of the typical nanometer-large recesses 168 (crevices) effected in the preceding tunnel sections in the upper wall 170 of the subsequent substrate sections 30 and, as greatly increased, is shown in Figures 31, 20 and 32.

Aldus tenminste mede de unieke bewerkstelliging en het daarop-volgend onderhouden van een ultra vlakheid van de aan de uitgangszijde van deze tunnel-opstelling 10 verkregen opvolgende semiconductor substraat-gedeeltes 30, 25 waaruit in een daarop-volgende inrichting door deling ervan het verkrijgen van semiconductor chips.Thus at least partly due to the unique realization and subsequent maintenance of an ultra-flatness of the successive semiconductor substrate portions 30, obtained at the exit side of this tunnel arrangement 10, from which in a subsequent device the semiconductor can be obtained by dividing it potato chips.

Binnen het kader van de uitvinding is voor deze aangegeven en omschreven semiconductor tunnel-opstelling 12 elke andere uitvoering ervan toepasbaar.Within the scope of the invention, any other embodiment thereof can be used for the indicated and described semiconductor tunnel arrangement 12.

10370681037068

Claims

1. Semiconductor tunnel arrangement, characterized in that it is designed and comprises means such that, during its operation, uninterrupted movement of therethrough of successive semiconductor substrate sections for strip-shaped sections at the location of the central semiconductor treatment part thereof the continuous occurrence of semiconductor treatments of its upper layer.

2. Semiconductor tunnel arrangement according to Claim 1, characterized in that it is further designed such that it accommodates therein at least partly a number of strip-shaped semiconductor treatment arrangements, which are at least partially accommodated in the central semiconductor treatment section of at least the upper tunnel block and extending in the transverse direction thereof, for the purpose of thereby thereby continuing a semiconductor treatment process of the continuously moving semiconductor substrate sections underneath it under an at least very low-frequency pulsing condition thereof.

3. Semiconductor tunnel arrangement according to the

4. Semiconductor tunnel arrangement according to Claim 3, characterized in that it is further designed such that the interchangeable block-shaped block is accommodated in the sub-tunnel block, comprising a strip-shaped compartment with a strip-shaped pressure wall at its top side part thereof for the purpose of the subsequent supply and removal of typical liquid medium to and from this compartment via a line connected to this block, the continuous maintenance of typically an at least low-frequency pulsing condition of this pressure wall portion and therewith of the successive, continuously moving semiconductor substrate portions thereabove.

5. Semiconductor tunnel arrangement according to the

6. Semiconductor tunnel arrangement according to Claim 4, characterized in that it is further designed and comprises such means that for this purpose at least in the subdivision section between this pressure wall section and this successive semiconductor substrate moving above it portions the continuous maintenance of a micrometer high film liquid medium.

Semiconductor tunnel arrangement according to Claim 5 or 6, characterized in that it is further designed and comprises means such that it is typically maintained overpressure of the medium in the strip-shaped upper slit portion above said successive one, continuous semiconductor substrate portions moving underneath it relative to the pressure of the pulsating medium in such a lower compartment during at least the downward movement of this pressure wall portion.

8. A semiconductor tunnel arrangement as claimed in Claim 2, characterized in that it is further designed and comprising means such that such a strip-shaped semiconductor treatment section is an interchangeable block in its upper tunnel block, thereby maintaining it continuously. of the following: a) at least one low frequency pulsing condition of the strip-shaped up and downwardly movable pressure wall portion of this block; or b) at least one low-frequency vibration condition of this pressure wall portion.

9. Semiconductor tunnel arrangement according to Claim 8, characterized in that it is further designed such that, in the upper tunnel block, the accommodation of an exchangeable strip-shaped block, comprising a strip-shaped compartment with a strip-shaped pressure wall at the bottom thereof part for the purpose of the subsequent supply and removal of typical liquid medium to and from this compartment via a line connected to this block, the continuous maintenance of an at least low-frequency pulsing condition of this pressure wall part for the purpose thereby effecting and subsequently maintaining a semiconductor treatment process of the upper layer of the successive, continuously moving semiconductor substrate sections underneath it.

10. A semiconductor tunnel arrangement as claimed in Claim 9 under b), characterized in that in this block the incorporation of a camshaft arrangement rotating during its operation for the purpose of maintaining such a low-frequency at least 30 vibrating condition of its strip-shaped pressure wall portion.

11. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that therein therein accommodates a strip-shaped medium supply device for the purpose of a continuous supply taking place therein during its operation. of the combination of at least one evaporable liquid carrier medium and particles of a semiconductor substance in liquid and / or solid form thereof and which is detailed and described in Dutch Patent Application No. 5 filed simultaneously with this Patent Application No. 5. 4 from the applicant.

12. A semiconductor tunnel arrangement as claimed in Claims 10 and 11, characterized in that it is further designed and comprising means such that such a camshaft arrangement is included in the upper tunnel block with the accommodation in the strip-shaped pressure wall thereof of an electrically insulated thin-walled metal electric heating device, thereby also co-heating to such an extent that in the upper slit below it, above the successive, continuous continuous semiconductor substrate sections moving underneath it, evaporation of the typically low-boiling liquid carrier medium fed into this medium feeder, thereby causing precipitation of particles of this semiconductor substance on these successive, continuously moving semiconductor substrate portions underneath it.

13. A semiconductor tunnel arrangement as claimed in Claim 12, characterized in that it is further designed in such a way that, with the aid of the rotation of this camshaft, the maintenance of such a low-frequency pulsing condition of this pressure wall section 30 is also provided for this purpose. of thereby taking place an optimum semiconductor deposition process for these particles of a semiconductor substance on these successive substrate portions moving underneath.

14. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that under this camshaft arrangement in the sub-tunnel block the accommodation of such a strip-shaped sub-compartment of an exchangeable sub-compartment is also filled with liquid medium. strip-shaped bottom block with its strip-shaped, wall-mounted pressure wall portion upwardly and downwardly displaced in height direction for the purpose of a semiconductor treatment process of this successive successive substrate sections moving through it between the combination of a typical low-frequency vibrating strip-shaped lower wall portion of this exchangeable upper block and the low-frequency pulsating strip-shaped pressure wall portion of this exchangeable lower block.

Claim 19 or 21, characterized in that it is further embodied such that it comprises means such that, in a strip-shaped semiconductor treatment part thereof, the liquid carrier medium part is continuously interrupted under such an electric vibrating heat source by evaporation therewith of depositing these particles of a semiconductor substance on the central semiconductor treatment portion of the successive, continuously moving semiconductor substrate portions therebetween under the construction thereon of a micrometer-high layer of these particles and where the evaporated liquid carrier medium is discharged via a subsequent strip-shaped medium discharge section of the upper tunnel block.

15. Semiconductor tunnel arrangement according to Claims 13 and 14, characterized in that it is further designed such that, however, the position of this camshaft arrangement, viewed in the direction of movement of these successive substrate sections, is thereby the rear part of this compartment for the purpose of contributing to the maintenance of the following: a) avoiding precipitation of these particles of a dielectric substance against the bottom of the pressure wall part of this camshaft arrangement; and b) a non-contact condition of the layer of such particles applied to these successive substrate sections moving therebetween with this pressure wall section.

Claim 4, characterized in that it is further embodied such that it comprises means such that the continuous maintenance of a mechanical contact of this up-and-down-moving pressure wall section with these successive substrate sections moving along it .

16. Semiconductor tunnel arrangement according to Claim 13 or the combination of 13 and 14, characterized in that it is further designed such that, as in the upper tunnel block behind this camshaft arrangement included therein, the accommodation of a strip-shaped discharge section for the evaporated medium, thereby increasing the height of the upper slit portion below at least its pressure wall portion in the direction of this medium discharge section.

17. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising such means that the cams of this camshaft arrangement have a profiling thereof such that the cam portion, which, seen in the direction of movement of the subsequent semiconductor 5 substrate portions moving alongside it, is located in front of the top portion thereof, comprising a relatively large length thereof for thereby effecting a temporarily slow upward displacement of this pressure wall portion, and with the short cam portion a subsequent rapid downward displacement thereof, with the uninterrupted occurrence of at least the following: a) an optimum application process of these particles of the dielectric substance; and b) contributing to avoiding precipitation of such particles against the bottom wall of this pressure wall portion thereof.

18. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising such means that there at the cams of this camshaft arrangement have a profiling thereof such that the cam portion, which , viewed in the direction of movement of the subsequent semiconductor substrate portions moving alongside it, is located in front of the top portion thereof, containing a small length thereof for thereby effecting a temporarily rapid upward displacement of this pressure wall portion, and with the other , relatively long cam portion and subsequent slow downward displacement thereof, with an optimum semiconductor treatment process taking place uninterruptedly, such as, among other things, cleaning, etching, stripping or rinsing.

19. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further designed and comprises means such that, on the upper tunnel block thereof, the pressure-tight attachment of an exchangeable strip-shaped upper block, with on the strip-shaped, thin-walled up and downwardly displaceable pressure wall portion thereof being provided with a also strip-shaped micrometer-high layer of a dielectric substance, with a micrometer-thick metal layer on top, which typically originates from an extremely thin film, with a thickness of typically less than 30 micrometres thereof, for the purpose of functioning as at least one electric heating element, with its connection at the location of both its transverse ends via an electric line to a mini electric power generating device and the compartment of this block is connected via a centrally located medium supply / discharge line to a supply device vo or an electrically insulating typical liquid medium, with the continuous operation of a low-frequency successive supply and discharge of this medium to and from this compartment during this operation of the tunnel, and with the aid of this electric power generating device the uninterrupted occurrence of evaporation of the liquid carrier medium portion of the strip-shaped supply device included in a previous tunnel portion for its combination with particles of a semiconductor substance in a solid or liquid form and the uninterrupted occurrence of a semiconductor treatment processes of the top layer of the substrate sections moving along it.

Claim 35, characterized in that it is further embodied such that it comprises means such that this film thereby acts as a temporary semiconductor substrate of the subsequent semiconductor substrate portions effected thereon, with in a device 25 behind its exit side the occurrence of separation thereof.

20. A semiconductor tunnel arrangement as claimed in Claim 19, characterized in that it is further designed such that it comprises means such that, with the aid of such a continuous low-pulse supply and removal of this liquid medium, the occurrence of the following semiconductor treatments therewith: a) in the combination of a relatively long, downward displacement of this pressure wall portion and a subsequent relatively short-term displacement thereof, thereby maintaining an uninterrupted semiconductor treatment process of this successive, moving underneath semiconductor substrate portions for the purpose of, among other things, a cleaning, etching, stripping or rinsing process; or b) in the combination of a short-term downward movement of this pressure wall portion and a subsequent relatively long-term upward movement thereof, thereby effecting a deposit of these particles of a semiconductor substance, under the construction of a micrometer-high layer of this layer particles on the subsequent semiconductor substrate portions moving therebetween; or c) when a high evaporating temperature is used for this liquid medium, the uninterrupted occurrence of these particles of a solid semiconductor substance, typically a dielectric substance, underneath the rear part of this pressure wall.

21. A semiconductor tunnel arrangement as claimed in Claim 19, characterized in that it is further embodied such that such an arrangement comprises a metal top wall thereof for the purpose of functioning as an electric heating element and this in part by means of a sufficiently low electrical voltage and a relatively large amplitude in up and down direction of the vibrations generated in this generator, which in a modified embodiment thereof only comprises one electrical connection on this metal upper wall as an upper electrode for the purpose of via an electrical lead its connection to such a generator and wherein the up and down displaceable strip-shaped underpressure wall portion of the exchangeable upper block is also connected thereto via such an electrical line for the purpose of this arrangement to function as a typical at least high-frequency vibrating heat source and this while also using e and partly adapted semiconductor embodiment of this generator, with the vibratory up and down movement of the pressure wall part of this upper block for the purpose of maintaining the combination of such a vibration and heating that the uninterrupted occurrence of a semiconductor treatment process of the successive, continuous 5 semiconductor substrate sections underneath.

22. A semiconductor tunnel arrangement as claimed in Claim 21, characterized in that it is further embodied such that it comprises means such that, with the aid of this arrangement, the occurrence of the process described in Claim 20 under a), b) or c) takes place. defined semiconductor treatments of the continuous moving semiconductor substrate sections underneath it.

23. Semiconductor tunnel arrangement according to the

24. Semiconductor tunnel arrangement according to Claim 23. characterized in that it is further designed such that in a strip-shaped section thereof, also with the aid of such a vibrating / heating device, the uninterrupted construction of a micrometer takes place. high layer of a typical dielectric substance on the micrometer high layer thereof already built up in a previous tunnel section 35.

25. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising such means that on its upper tunnel block there is the pressure-tight attachment of an exchangeable strip-shaped upper block, in which the accommodation of a strip-shaped electric vibration device, comprising a strip-shaped pressurized wall part of this block that can be moved up and down, with a micrometer-high, typically dielectric layer on top as an intermediate layer and a strip-shaped metal upper layer that is also micrometer-thick, with this upper layer functioning as an electrical upper electrode, which is connected via an electrical line to such a generator for the purpose of generating electrical vibrations therein, and this underpressure wall portion acting as a lower electrode, with its connection to this generator also via an electrical line for the maintenance during the operation of this generator maintaining a vibrating condition of this pressure wall section.

Claim 2, characterized in that it is further embodied such that such a strip-shaped semiconductor treatment arrangement also consists of a pressure wall section of an interchangeable section of the sub-tunnel block for upward and downward displacement. thereby maintaining the following: uninterruptedly: a) an at least very low-frequency pulsing condition of the subsequent semiconductor substrate portions moving continuously above it; or b) an at least high-frequency vibration condition of the subsequent semiconductor substrate portions moving continuously above it.

26. A semiconductor tunnel arrangement as claimed in Claim 25, characterized in that it is furthermore designed and comprising such means that, in addition, this device also functions as a considerable heat source by co-applying such a high electrical voltage for this typically at least very high-frequency vibrations, that an electric current is maintained therein from this upper electrode via the intermediate layer to this lower electrode, thereby accompanied by considerable heat development.

27. A semiconductor tunnel arrangement as claimed in Claim 26, characterized in that it is furthermore designed and comprising means such that, prior to this strip-shaped transducer arrangement, the accommodation of a strip-shaped device for an uninterrupted supply of the combination of typically a low-boiling liquid carrier medium and particles of a semiconductor substance in a solid or liquid form thereof and with the aid of this transducer arrangement the uninterrupted occurrence of evaporation of this liquid carrier medium while depositing these particles of typically a solid semiconductor substance on the subsequent semiconductor substrate portions moving continuously underneath it, with a strip-shaped discharge section behind it in this upper tunnel block for the continuous discharge of the evaporated carrier medium.

28. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that at least against the top wall of the compartment in which the accommodation of such a strip-shaped vibration / heating device is the accommodation of a at least co-insulating layer.

29. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that, after this vibrating / heating device included in the upper tunnel block, the receiving in a subsequent strip-shaped section of the bottom wall of this block of a mini-strip-shaped electric heating element for the purpose of at least substantially continuous and uninterrupted melting of the particles of a solid semiconductor substance deposited on these successive substrate portions and the incorporation in a subsequent portion of this block of a strip-shaped cooling section for effecting a micrometer-high layer of this semiconductor substance.

Semiconductor tunnel arrangement according to Claim 29, characterized in that, furthermore, this heating element is designed in such a way that the fusion of the micrometer-high layer of particles of a solid semiconductor substance onto the subsequent, continuous underneath thereof takes place. moving semiconductor substrate portions with a micrometer-high and sufficiently temporary liquid adhesive substance that has already been applied in a preceding upper slit portion to the subsequent, continuous-moving metal band portions as a temporary semiconductor substrate of the subsequent semiconductor substrate portions and wherein in a subsequent strip-shaped cooling device, which is incorporated in the upper tunnel block and indicated in Claim 22, by cooling it, the realization of a typically a micrometer-high dielectric solid layer anchored to this temporary adhesive layer.

31. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that like this strip-shaped vibration / heating device is included in the device compartment of an exchangeable block, which is pressure-tightly mounted on the upper tunnel block, this transducer further is designed in such a way that it co-acts as a strip-shaped, typically very low-frequency pulsed pressure wall with the subsequent taking place of the supply and discharge of typical gaseous medium to and from this comparative time.

32. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that in the transducer compartment of an interchangeable strip-shaped under-transducer block, which is included in the sub-tunnel block, the inclusion of a lower transducer for the uninterrupted occurrence of the co-pulsing / vibration of the subsequent semiconductor substrate sections which move along it continuously, having a relatively considerable thickness thereof and whereby this transducer is also connected for this purpose to such an electric generator with the generation therein and maintaining a typically low-frequency vibration condition of these generated vibrations.

33. Semiconductor tunnel arrangement according to Claim 32, characterized in that it is further designed such that the upper wall of this lower transducer forms part of this exchangeable tranducer block and the lower plate thereof is connected as an electric electrode. on this electric generator.

34. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further implemented in such a way that the use of an extremely thin, typically metal foil, which during its operation is continuously supplied from a film storage roll near its entrance for its purpose during its movement as a semiconductor substrate of the subsequent semiconductor substrate portions to be realized therein.

Claim 40, characterized in that it is further designed and comprises means such that the continuous supply and discharge of typical gaseous medium to and from this sub-compartment with the aid of this low-frequency vibrating strip-like arrangement co-maintaining a low-frequency pulsing condition of these successive, continuously moving semiconductor substrate portions.

35. A semiconductor tunnel arrangement as claimed in Claim 34, characterized in that it is further embodied such that these successive film sections form a definitive bottom layer of these successive, moving-through semiconductor substrate sections 15 and wherein in the beginning part of this tunnel arrangement is typically anchoring the micron high layer of a dielectric substance applied thereon with the aid of an adhesive substance.

36. Semiconductor tunnel arrangement according to the

37. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that the use of an at least 0.1 mm thick continuous metal strip as a temporary semiconductor substrate thereof and wherein the use for this belt of a roll arrangement near its input and output sides and wherein in a device immediately behind its output the occurrence of separation of the subsequent semiconductor substrate portions effected thereon in this tunnel arrangement is experienced.

38. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is furthermore embodied such that the use of the combination of a strip-shaped, typically very high-frequency vibrating vibrator / evaporator, incorporated in a strip-shaped upper part. device block of the upper tunnel block and an underlying strip-shaped typical low-frequency vibrating lower vibration device, which is included in the lower vibration block as an interchangeable part of the lower tunnel block, with any desired semiconductor embodiment of this combination of a lower and upper device

39. A semiconductor arrangement as claimed in Claim 38, characterized in that it is further embodied such that these upper and lower vibrating devices are each separately connected to such an electrical vibration-generating device, with every possible construction and form of such an electrical oscillation generated for each of these two devices for the uninterrupted occurrence of any possible semiconductor treatment or build-up process for the subsequent, continuous, semiconductor substrate portions moving therebetween.

40. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that, in a strip-shaped section of the sub-tunnel block, the accommodation of such a strip-shaped substrate arrangement is included in an exchangeable device block. and in the upper tunnel block the accommodation of an interchangeable strip-shaped block, in which in its compartment the arrangement of a rotating camshaft arrangement for the typical high-frequency vibrating up and down movement of the pressure wall part thereof situated below.

41. Semiconductor tunnel arrangement according to the

42. A semiconductor tunnel arrangement as claimed in Claim 41, characterized in that it is further embodied and comprises means such that the following conditions for this sub-transducer arrangement are maintained during its operation: a) a low-frequency pulsing condition of this transducer and therewith of the successive continuous semiconductor substrate portions moving along it, as it is also connected to such an electrical vibration generating device for the purpose of generating a low-frequency pulsating electrical voltage therein; and b) maintaining an ultra-low-frequency pulsing condition thereof with the successive supply and discharge of the gaseous medium to and from this lower compartment for this transducer.

43. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that in the upper tunnel block there is accommodated a strip-shaped feed device for the separate feed of a low percentage of high-boiling liquid carrier medium. and supplying the combination of a high percentage of low-boiling liquid carrier medium and particles of a semiconductor substance for the purpose of effecting the incorporation of a vibrating / evaporating device in the upper tunnel block by evaporation of the low-boiling liquid carrier medium of deposition of a micrometer-high layer of the combination of this high-boiling liquid carrier medium and these particles of this substance on the subsequent semiconductor substrate portions moving continuously underneath it.

A semiconductor tunnel arrangement as claimed in Claim 43, characterized in that it is further designed and comprising means such that, as thereby, the use of the combination of low-boiling liquid carrier medium and particles of a semiconductor substance is evaporated by this of the low-boiling liquid carrier medium, the continuous occurrence of the formation of a micrometer-high layer of this combination of the high-boiling liquid medium and these particles of a semiconductor substance on these successive, semiconductor 10 substrate portions moving along it.

45. A semiconductor tunnel arrangement as claimed in Claim 44, characterized in that it is further designed and comprising such means that, as in this case, the use of the combination of low-boiling liquid carrier medium and particles of a very high-boiling liquid substance, by evaporation of this low-boiling liquid carrier medium, the uninterrupted occurrence of the formation of a micrometer-high layer of this combination of the high-boiling liquid carrier medium and these particles of the very high-boiling liquid substance, typically a liquid adhesive substance , on these successive semiconductor substrate portions moving therebetween, with the possible functioning of such successive metal foil portions as such semiconductor substrate portions.

46. A semiconductor tunnel arrangement as claimed in Claim 45, characterized in that it is further designed such that, in this upper tunnel block, viewed in the direction of movement of these successive semiconductor substrate sections moving therethrough, the inclusion of a second vibrating / evaporating device for the purpose of vaporizing this higher-boiling liquid carrier medium 35 from this applied layer, thereby causing expulsion therefrom of the evaporated liquid medium.

47- Semiconductor tunnel arrangement according to the combination of Claims 44 and 46, characterized in that it is further designed such that, with the aid of this second device, exclusively the evaporation of this high-boiling liquid carrier medium takes place under the formation of a micrometer-high layer of these particles from such a solid semiconductor substance, typically a dielectric substance, and wherein in a subsequent tunnel section the occurrence of an oven treatment of this layer while forming a micrometer-high layer in a liquid form thereof.

48. Semiconductor tunnel arrangement according to the combination of Claims 45 and 46, characterized in that it is further designed such that, with the aid of this second device, the evaporation of this high-boiling liquid carrier medium takes place exclusively under the formation of a micrometer-high layer of these particles of such a liquid adhering substance and in a subsequent tunnel section, an oven treatment of this layer taking place to form a (sub) micrometer-high layer of this liquid adhering substance.

49. A semiconductor tunnel arrangement as claimed in Claim 47, characterized in that it is further designed such that, in a subsequent strip-shaped furnace section thereof, with the rear part of this second device typically functioning as such a heat source, the fusion of the remaining micron high layer of particles of this solid semiconductor substance to form a liquid micron high layer thereof, with the effect of a micron high layer of cooling in a subsequent tunnel section this substance in a solid form thereof.

50. A semiconductor tunnel arrangement as claimed in any one of the preceding Claims, characterized in that it is further embodied such that at least locally in the upper tunnel block the accommodation of a number of 48 · successive strip-shaped semiconductor treatment sections thereof, including the arrangement of such a strip-shaped upper transducer with a strip-shaped device in front of it for the continuous supply of the combination of liquid carrier medium and particles of a solid-state semiconductor substance, typically a dielectric substance, and behind such a strip-shaped drain section for the purpose of discharging the vaporous medium produced by means of the vibrating / evaporating device 10 by evaporation of this liquid carrier medium, with in between the accommodation of a strip-shaped medium-lock arrangement using gaseous lock-medium for keeping this separate subsequent semiconductor 15 treatment sec and therefore also of these applied semiconductor layers.

51. A semiconductor tunnel arrangement as claimed in Claim 50, characterized in that it is further designed such that only after a number of these accumulated superimposed semiconductor layers of particles of this semiconductor substance take place. of such an oven treatment thereof for at least co-occurrence of the fusion of these applied particles of this semiconductor substance and, in a subsequent tunnel section, by cooling them, bringing about a micrometer-high layer in a solid state thereof.

52. A semiconductor tunnel arrangement as claimed in Claim 51, characterized in that it is further embodied such that the fusing of these applied micrometer-high layers takes place, and this also with the upper part of an already applied layer of a semiconductor substance in a solid form thereof, such as, among other things, a semiconductor adhesive substance.

53. A semiconductor tunnel arrangement as claimed in Claim 50, characterized in that it is further embodied such that the functioning of this last vibrating / evaporating device is also such as a heat source that thereby the already fusing of these particles of dielectric substance and this also takes place together with the upper part of an already applied layer of whether or not the same semiconductor substance.

54. A semiconductor tunnel arrangement as claimed in Claim 51, characterized in that it is further designed in such a way that a sufficient pre-heating of such a device takes place already in the device above such a strip-shaped medium supply device. a combination of liquid carrier medium and particles of a semiconductor substance in a solid form thereof.

55. A semiconductor tunnel arrangement as claimed in Claim 50, characterized in that it is further embodied such that each of these devices is also connected to such an electrical vibration-generating device, in which the uninterrupted occurrence of (your generation of vibrations) takes place. with such a frequency that it can be used for such a vibration generating device.

56. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such that in a strip-shaped section of the upper tunnel block behind the accommodation therein of a strip-shaped medium supply device for the combination of liquid carrier medium and particles of a solid semiconductor substance, a strip-shaped exchangeable block, in which the accommodation of a compartment, containing such a strip-shaped evaporator / vibrator and typically such a subsequent medium discharge section, with a discharge system for connection thereto the medium evaporated with the aid of this device for maintaining an at least very high-frequency vibration condition of the strip-shaped bottom wall portion of this block and wherein below this block in the sub-tunnel block also the accommodation of an exchangeable block, also comprising a strip-shaped compartment, in which the accommodation of a camshaft arrangement with d above the strip-shaped pressure wall portion of this block for the purpose of effecting and subsequently maintaining a micrometer-high film thereof between this pressure wall portion and the subsequent, continuous moving semiconductor substrate portions 10 thereabove for the uninterrupted occurrence of a semiconductor treatment process also under the vibrating condition of these successive semiconductor substrate portions.

57. A semiconductor tunnel arrangement as claimed in Claim 56, characterized in that it is further embodied such that this vibration / evaporation device is thereby also connected to such a device in which the uninterrupted generation of electrical vibrations with a form and frequency most suitable for this vibrating / evaporating device 20.

'58. Semiconductor tunnel arrangement according to Claim 56, characterized in that it is further designed such that it comprises means such that the cams of this camshaft arrangement, viewed in the direction of movement thereof, have a short ascending height and behind it a relatively long have a decreasing height for the purpose of maintaining a rapid upward displacement and a subsequent slow downward displacement of this pressure wall portion and therefore also of these successive superimposed semiconductor substrate portions for the purpose of contributing at least to a maximum precipitation of solid particles thereon to form a micrometer-high layer thereof.

59. A semiconductor tunnel arrangement as claimed in Claim 56, characterized in that it is further embodied and comprises means such that, in view of the direction of movement thereof, these cams have a relatively long rising height and, after that, a short falling height thereof. have for the purpose of maintaining a slow upward displacement therewith and a subsequent rapid downward displacement of this pressure wall part and therefore also of these semiconductor substrate parts moving along it for the benefit of co-supplied liquid semiconductor treatment medium the occurrence of an optimum expulsion / removal of particles of typically a solid semiconductor substance from the top layer of these successive substrate portions and the semiconductor recesses provided therein (crevices) or an optimum cleaning, etching, stripping and rinsing process . 15

Semiconductor tunnel arrangement according to Claim 59, characterized in that it is further designed such that the cams of this lower camshaft arrangement, viewed in the direction of movement thereof, have such a short ascending height and a relatively long descending beyond it. its height for the purpose of co-operating with the aid of the vibrating upper heating / vibrating device, also functioning as a heat source, without interruption of a micron-high layer of molten dielectric substance on the already-applied micron-high layer of dielectric substance in a solid form thereof and this under an anchoring condition thereof with this layer.

61. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that such a strip-shaped electric vibrator / heating device is a transducer arrangement for the purpose of maintaining an at least very high-frequency, typically a UHF or MHF vibration condition of the semiconductor treatment medium in the upper slit below.

A semiconductor tunnel arrangement as claimed in Claim 61, characterized in that the use of at least one relatively thin strip-shaped rectangular disk, which is adhered to the pressure wall portion of the exchangeable transducer block and against the thin-walled metal surface. The electrode and this tunnel rack are also designed in such a way that the use of such an electric vibration generating device is used for this purpose, in which purpose the uninterrupted occurrence of the combination of a considerably high electric voltage and an at least very high vibrating frequency takes place.

63. Semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprising means such that in the two parts of this tunnel on either side of the central semiconductor upper gap portion, which are typically recess is included within the two transverse ends of the upper tunnel block, the inclusion of a medium slot arrangement for the uninterrupted occurrence of the locking of the primary cetral upper slit portion with the aid of gaseous slot medium, in which the subsequent semiconductor also takes place uninterruptedly treatments of these successive, continuous-moving semiconductor substrate portions underneath, of the secondary, underlying-slit portion and thereby both of these medium-slot arrangements are typically located above these subsequent, continuous metal-strip or tape-g-moving-through. parts such as at least 30 during their movement through this tunnel arrangement a semiconductor substrate of these successive substrate parts.

64. Semiconductor tunnel arrangement, in which the incorporation of a plurality of electric vibrators in the upper and lower tunnel blocks thereof and which have already been described in a plurality of preceding Claims, characterized in that it is further embodied such that at least partly with the aid of it the realization of a typical ultra flatness of. the successive semiconductor substrate portions obtained at its output side, from which in a subsequent device the semiconductor chips are obtained by dividing them.

65. Semiconductor tunnel arrangement according to Claim 64, characterized in that these vibrating devices can also be used in the other tunnel arrangements, which are indicated and described in the other Patent applications filed simultaneously with this Patent application. .

66. A semiconductor tunnel arrangement as claimed in Claim 65, characterized in that it is further designed in such a way that the use of the structural structures indicated and described in these other Patent applications is included therein.

67. Method of a semiconductor tunnel arrangement, characterized in that during its operation the continuous occurrence of displacement therethrough of successive semiconductor substrate sections for the purpose of in strip-shaped sections at the location of the central semiconductor treatment section thereof at least partly uninterrupted occurrence of semiconductor treatments of its upper layer.

Method according to Claim 67, characterized in that, as in this tunnel arrangement, the inclusion of ... at least partly a number of strip-shaped semiconductor treatment arrangements, which are at least partially included in the central semiconductor treatment section of at least the upper tunnel block and extending transversely therefrom, thereby continuing a semiconductor treatment process of the semiconductor substrate portions continuously moving underneath it under an at least very low-frequency pulsing condition thereof.

The method according to Claim 68, characterized in that, like this tunnel arrangement, such a strip-shaped semiconductor treatment arrangement also comprises a pressure wall portion of an interchangeable portion that is displaceable upwards and downwards. of the sub-tunnel block, the uninterrupted occurrence of the maintenance of the following: a) an at least very low-frequency pulsing condition of the subsequent semiconductor substrate portions moving continuously above it; or b) an at least high-frequency vibration condition of the 10 successive continuous semiconductor substrate portions passing therethrough.

70. A method according to Claim 69, characterized in that, as in the lower tunnel block, the inclusion of an exchangeable strip-shaped block, comprising a strip-shaped compartment with a strip-shaped pressure wall portion thereof at the location thereof, with the aid of successively supplying and discharging typical liquid medium to and from this compartment via a line connected to this block continuously maintaining typically an at least low-frequency pulsing condition of this pressure wall portion and thereby moving the successive, uninterrupted thereabove thereof semiconductor substrate portions.

71. A method according to Claim 70, characterized in that, for this purpose, the continuous maintenance of a mechanical contact of this up-and-down-moving pressure wall section with these successive substrate sections moving along it.

72. A method according to Claim 70, characterized in that, for this purpose, at least the under-gap portion between this pressure-wall portion and these successive substrate portions moving thereabove are continuously maintaining a micrometer-high film of liquid medium.

A method according to Claim 71 or 72, characterized in that thereby typically maintaining an overpressure of the medium in the strip-shaped upper slit portion above said successive, continuously moving beneath, semiconductor substrate portions moving relative to the pressure of the pulsating medium in such a lower compartment during at least the downward movement of this pressure wall portion.

A method according to Claim 68, characterized in that such a strip-shaped semiconductor treatment portion is an interchangeable block in its upper tunnel block, thereby continuously maintaining the following: a) at least one low-frequency pulsing condition of the strip-shaped up and downwardly movable pressure wall portion of this block; or b) at least one low-frequency vibration condition of this pressure wall portion.

75. Method according to Claim 74, characterized in that, as there is in the upper tunnel block, the accommodation of an interchangeable strip-shaped block, comprising a strip-shaped compartment with a strip-shaped pressure wall section at the bottom thereof, with the aid of the subsequent supply and removal of typical liquid medium to and from this compartment via a line connected to this block, the continuous maintenance of an at least low-frequency pulsing condition of this pressure wall portion for the purpose of effecting and subsequently maintaining a semiconductor treatment process of the top layer of the successive, continuously moving semiconductor substrate portions underneath.

A method according to Claim 75, characterized in that, as in this block, the incorporation of a camshaft arrangement rotating during its operation, the maintenance therewith of such an at least low-frequency vibrating condition of the strip-shaped pressure wall portion thereof.

A method according to any one of the preceding Claims, characterized in that, as in this tunnel arrangement, the inclusion of a strip-shaped medium supply device, during its operation, the uninterrupted supply of the combination of at least one vaporizable liquid takes place therein. carrier medium and particles of a semiconductor substance in liquid and / or solid form thereof to a strip-shaped section of the upper tunnel block at the location of the central semiconductor treatment part thereof and which is detailed and described in the Dutch patent application filed simultaneously with this Patent Application Patent Application No. 4 from the applicant.

78. A method according to Claims 76 and 77, characterized in that, as such a camshaft arrangement is included in the upper tunnel block with the strip-shaped pressure wall portion thereof accommodating an electrically insulated thin-walled metal heating plate, thereby also incorporating it into a such heating takes place to such an extent that in the upper slit below it above the successive, continuously moving semiconductor substrate sections passing underneath it, there is uninterrupted evaporation of the typically low-boiling liquid carrier medium fed through this medium supply device thereby causing precipitation of particles of this semiconductor substance on these successive, continuously moving semiconductor substrate portions underneath.

79. A method according to Claim 78, characterized in that, as with the aid of the rotation of this camshaft, also the maintenance of at least one low-frequency pulsing condition of this pressure wall section, thereby the continuous occurrence of an optimum semiconductor precipitation process for these particles of a semiconductor substance on these successive, continuously moving substrate portions underneath. 35

A method according to any one of the preceding claims, characterized in that, as is the case below this camshaft arrangement in the sub-tunnel block, the accommodation of such a strip-shaped sub-compartment of an interchangeable strip-shaped sub-block, also filled with liquid medium, with the upper part thereof strip-shaped, vertically displaceable pressure wall portion of this block, with the aid of this combination the continuous occurrence of a semiconductor treatment process of these successive, intermediate-moving successive substrate portions under the combination of a typical low-frequency vibrating strip-shaped bottom wall portion of this exchangeable top block and the low-frequency pulsating strip-shaped pressure wall portion of this exchangeable bottom block.

The method according to Claim 79 or 80, characterized in that, as seen, the position of this camshaft arrangement, viewed in the direction of movement of these .15 successive substrate portions, in the rear portion of this compartment, contributes to maintaining the following: a) avoiding precipitation of these particles of a dielectric substance against the underside of the pressure wall portion of this camshaft arrangement; and b) a non-contact condition of the layer of such particles applied to these successive substrate sections moving alongside it with this pressure wall section.

82. Method according to Claim 79 or the combination of 79 and 80, characterized in that, as in the upper tunnel block behind this camshaft arrangement included therein, the accommodation of a strip-shaped discharge section for the evaporated medium, with an increasing height of the evaporated medium. upper slit portion below at least its pressure wall portion in the direction of this medium discharge section, the uninterrupted occurrence of an optimum discharge of the evaporated medium to this discharge section.

83. A method as claimed in any one of the preceding Claims, characterized in that like the cams of such a camshaft arrangement have a profiling thereof such that the cam portion, which, viewed in the direction of movement of the subsequent substrate portions moving along it, is located in front of the top portion thereof, containing a relatively large length thereof, thereby effecting a temporarily slow upward displacement of this pressure wall portion, and with the short cam portion a subsequent rapid downward displacement thereof, with the uninterrupted occurrence of at least the the following: a) an optimum application process for these particles of the typical dielectric solid substance; and b) contributing to avoiding precipitation of such particles against the bottom wall of this pressure wall portion thereof.

84. A method as claimed in any one of the preceding Claims, characterized in that like the cams of this camshaft arrangement have a profiling thereof such that the cam portion which, viewed in the direction of movement of the subsequent semiconductor substrate portions moving along it is located in front of the top portion thereof, having a small length thereof, thereby effecting a relatively rapid upward displacement of this pressure wall portion, and with the other relatively long cam portion a subsequent slow downward displacement thereof, the continuous uninterrupted occurrence of an optimum semiconductor treatment process, such as, inter alia, cleaning, etching, stripping or rinsing of the semiconductor top layer of these successive substrate portions applied in a preceding tunnel portion 30.

85. A method as claimed in any one of the preceding Claims, characterized in that, as on its upper tunnel block, the pressure-tight attachment of an exchangeable strip-shaped upper block, with its strip-shaped, thin-walled up and downwardly displaceable pressure wall portion being provided with an also strip-shaped micrometer-high layer of a dielectric substance, with a micrometer-thick metal layer on top of it, which typically originates from an extremely thin film, with a thickness typically less than 30 micrometres thereof, thereby functioning during the operation of this tunnel arrangement 5 as at least one electric heating element.

A method according to Claim 85, characterized in that, as at the location of the two transverse ends of this metal electrode plate, its connection via an electrical lead to a mini electric current generating device and the compartment of this block via a centrally located supply / discharge line is connected to a supply device for an electrically insulating typical liquid medium, during the operation of this tunnel arrangement the continuous maintenance via this line of a low-frequency successive supply and discharge of this medium to and from this compartment and furthermore with the aid of this electric power generating device the uninterrupted occurrence of evaporation of the liquid carrier medium part of the strip-shaped feed device included in a previous tunnel part for its combination with particles of a semiconductor substance in a solid or liquid form is the continuous occurrence of a semico Inductor treatment process of the top layer of the substrate portions moving underneath.

87. A method according to Claim 86, characterized in that, with the aid of such a continuous low-pulsing supply and removal of this liquid medium, the following semiconductor treatments take place thereby: a) in the combination of a relatively long-term downward movement of this pressure wall portion and a subsequent relatively short-term upward movement thereof thereby maintaining an uninterrupted semiconductor treatment process of these successive semiconductor substrate portions moving underneath for the purpose of, among other things, a cleaning, etching, stripping or rinsing process; or b) in the combination of a brief downward movement of this pressure wall portion and a subsequent relatively long upward movement thereof, thereby effecting a precipitation of these particles of a semiconductor substance, under the construction of a micrometer-high layer of these particles to the subsequent semiconductor substrate portions moving therebelow; or c) when a high evaporating temperature is used for this liquid medium, the uninterrupted occurrence of these particles of a solid semiconductor substance, typically a dielectric substance, underneath the rear part of this pressure wall.

88. A method according to Claim 87, characterized in that, as such an arrangement comprises a metal top wall thereof, it also functions as an electric heating element and this also partly due to a sufficiently low electric voltage and a relatively large amplitude in up and down direction of the vibrations generated in this generator.

A method according to Claim 88, characterized in that, as this camshaft arrangement comprises only one electrical connection to this metal upper wall as an upper electrode 25 for its connection to such a generator via an electrical line and wherein it is open downwardly displaceable strip-shaped underpressure wall portion of the exchangeable upper block is also connected thereto via such an electrical line, the functioning of this arrangement as a typical at least a high-frequency vibrating heat source and, like that, also using a co-adapted semiconductor embodiment of this generator, with thereby causing the pressure wall portion of this upper block to be moved up and down vibrating continuously, the continuous maintenance of the combination of such a vibration and heating thereof, thereby the continuous occurrence of a semiconductor 1037068 treatment process of the successive smoke underneath moving semiconductor substrate portions under these conditions.

A method according to Claim 89, characterized in that, with the aid of this camshaft arrangement, the uninterrupted occurrence of one of the semiconductor treatments described in Claim 87 under a), b) or c) of the uninterrupted moving along it subsequent substrate portions.

91. A method according to Claim 85 or 88, characterized in that in a strip-shaped semiconductor treatment part thereof under such an electrically vibrating heat source by evaporation therewith of the liquid carrier medium part the uninterrupted precipitation of these particles of a semiconductor substance on the central semiconductor treatment portion of the successive, continuously moving substrate portions underneath it under the structure thereon of a micrometer-high layer of these particles and wherein the evaporated carrier medium is discharged via the subsequent strip-shaped medium discharge section of the upper tunnel block.

92. A method according to Claim 91, characterized in that in a strip-shaped part of this tunnel arrangement, also with the aid of such a vibrating / heating device, the uninterrupted occurrence of the construction of a micrometer-high layer of a typical diode -electric substance on the micrometer-high layer thereof already built up in a preceding part thereof.

A method as claimed in any one of the preceding Claims, characterized in that, as is the case here on the upper tunnel block, the pressure-tight attachment of an exchangeable strip-shaped upper block, in which the accommodation of a strip-shaped electric vibrator, comprising a strip-shaped 35 of this block, with a micrometer-high, typically dielectric layer on top as an intermediate layer and a strip-shaped metal upper layer, which is also micrometer-thick, with this upper layer functioning as an electrical upper electrode, which is connected via an electrical line to such an electrical generator for the purpose of generating electrical vibrations therein, and this underpressure wall portion serving as a lower electrode, with also its connection to this generator via an electrical line, maintaining a vibration condition of this pressure wall during its operation -part .·

A method according to Claim 93, characterized in that the functioning of this vibrating device also serves as a considerable heat source by co-applying such a high electrical voltage for these typically at least very high-frequency vibrations that electric current is maintained from this upper electrode via this dielectric intermediate layer to this lower electrode, accompanied by considerable heat development.

95. A method according to Claim 94, characterized in that, as in addition to this strip-shaped transducer arrangement, the incorporation into this tunnel arrangement of a strip-shaped device for an uninterrupted supply of the combination of typically a low-boiling liquid carrier medium. and particles of a semiconductor substance in a solid or liquid form thereof, with the aid of this vibrating / heating arrangement the continuous occurrence of evaporation of this liquid carrier medium with precipitation of these particles of typically a solid semiconductor substance on the subsequent 30, continuous semiconductor substrate sections moving therebetween, with a strip-shaped discharge section behind it in this upper tunnel block for the continuous discharge of the evaporated carrier medium.

96. A method as claimed in any one of the preceding Claims, characterized in that, as at least against the top wall of the compartment in which such a strip-shaped vibrating / heating device is located, the absorption of an at least co-insulating layer is at least substantially limiting the at least upward escape of heat from this vibrator / heater.

97. Method as claimed in any of the foregoing Claims, characterized in that, as is the case after this combination of such a vibrating / heating device and the subsequent discharge section for the evaporated carrier medium in a subsequent strip-shaped section of the bottom wall, incorporated in the upper tunnel block of the upper tunnel block or the interchangeable upper block included therein, the incorporation of a mini-strip-shaped electric heating element, the at least almost exclusively and uninterrupted occurrence of the melting of the particles of a solid semiconductor substance deposited on these successive substrate portions and in a subsequent portion of this upper tunnel block or upper block includes the inclusion of a strip-shaped cooling section for effecting a micrometer-high layer of this semiconductor substance.

98. A method as claimed in Claim 97, characterized in that, as this heating element is designed such that the uninterrupted occurrence of the fusing of the micrometer-high layer of the applied particles of a solid semiconductor substance to the subsequent one occurs, continuous semiconductor substrate sections moving underneath it, comprising a micrometer-high, and to a sufficient extent temporary layer of, a liquid adhesive substance which has already been applied in a preceding upper slit section to the subsequent, continuous metal band sections moving underneath it a temporary semiconductor bottom layer of the successive substrate portions and wherein in a subsequent strip-shaped cooling device, which is included in the upper tunnel block, by cooling thereof, the realization of typically a micrometer-high dielectric solid layer, which is anchored to a sufficient degree on this temporary adhesive layer.

99. A method according to any one of the preceding Claims, characterized in that such a strip-shaped vibration / heating device is included in a compartment of an exchangeable block, which is pressure-tightly mounted on the upper tunnel block, thereby co-operating this device as a strip-shaped, typically very low-frequency pulsed pressure wall, with the subsequent taking place of the supply and discharge of typical gaseous medium to and from this compartment.

100. A method according to any one of the preceding claims, characterized in that, as in the compartment of an exchangeable strip-shaped bottom block, which is included in the sub-tunnel block, the incorporation of a vibrating device, thereby the continuous occurrence of the pulsing / vibrating of the successive, continuously moving semiconductor substrate portions thereabove with a relatively considerable thickness thereof and and wherein this vibration device is therefore also connected to such an electric generator, with the generation and maintenance therein of a typical low-frequency vibration condition of these generated vibrations and for this purpose the upper wall of this vibrating device forms part of this exchangeable lower block as a strip-shaped up and down displaceable pressure wall part and the lower plate of this device is connected to this generator below the dielectric intermediate layer as an electrical electrode .

101. A method according to any one of the preceding claims, characterized in that, as in this tunnel arrangement, the use of an extremely thin, typically metal foil, which during its operation is continuously supplied from a foil storage roller near its entrance , during its displacement therethrough, it acts as a semiconductor substrate of the subsequent semiconductor substrate portions continuously moving therethrough.

102. A method according to Claim 101, characterized in that, like said successive film portions, a. forming a definitive lower layer of these successive semiconductor substrate portions moving through this tunnel arrangement, the initial portion thereof typically being the continuous use of an anchoring substance for an anchoring process for the micrometer-high layer of a layer applied thereon dielectric substance.

A method according to Claim 101, characterized in that, as this film thereby acts as a temporary semiconductor substrate of the subsequent semiconductor substrate portions effected thereon, using a temporary adhesive substance in a device behind its exit side the separation thereof therefrom.

104. A method as claimed in any one of the preceding Claims, characterized in that, as in this tunnel arrangement, the use of a continuous metal strip at least 0.1 mm thick as a temporary semiconductor substrate 20 of the successive semiconductor substrate portions while using for this tape from a roll arrangement near its input and output sides, while in a device immediately behind its output the separation of the subsequent semiconductor substrate portions thereon effected therein.

105. A method according to any one of the preceding Claims, characterized in that, as in this tunnel arrangement, the application of the combination of a strip-shaped, typically very high-frequency vibrating / evaporating device is used locally, which is included in an exchangeable strip-shaped upper block. of the upper tunnel block and an underlying strip-shaped, typically low-frequency vibrating, lower vibrating device, which is included in the lower block as an interchangeable part of the lower tunnel block, with any desired semiconductor embodiment of this combination of such a lower and upper device, since at the occurrence of every possible semiconductor treatment of the subsequent semiconductor substrate portions moving therebetween. 5

A method according to Claim 105, characterized in that, as these upper and lower vibrating devices are each separately connected to such an electrical vibration-generating device, containing every possible construction and shape of such an generated electrical vibration. for each of these two devices, thereby the uninterrupted occurrence of such a semiconductor treatment or build-up process for the successive, uninterrupted moving semiconductor substrate portions under such a vibrating condition.

107. A method according to any one of the preceding claims, characterized in that, as in a strip-shaped section of the sub-tunnel block, the accommodation in such an exchangeable bottom block, including a strip-shaped bottom device arrangement therein and above it in the upper tunnel block of an exchangeable upper block, in which in its compartment the arrangement of a rotating camshaft arrangement, thereby thereby moving up and down the pressure wall portion thereof thereof typically high-frequency vibrating up and down.

108. A method according to Claim 107, characterized in that the continuous supply and discharge of typical gaseous medium to and from this lower compartment, in which the reception of such a strip-shaped vibrator, with the aid of this layer frequent vibrating under-vibration device co-maintaining a low-frequency pulsing condition of these successive, continuously moving semiconductor substrate sections along it.

A method according to Claim 108, characterized in that the following conditions for this lower vibration element arrangement are maintained during its operation: a) a low-frequency pulsing condition of this vibration arrangement and thereby of the subsequent one, continuous semiconductor substrate portions moving along it, as it is also connected to such an electric vibration generating device for the purpose of generating a low-frequency pulsating / vibrating electrical voltage therein; and b) maintaining an ultra-low-frequency pulsing condition thereof with the successive supply and discharge of the gaseous medium to and from this lower compartment for this vibrating element arrangement.

110. A method according to any one of the preceding claims, characterized in that, as in the upper tunnel block, the accommodation of a strip-shaped feed device for the separate supply of a low percentage of high-boiling liquid carrier medium and the supply of the combination of a high percentage low-boiling liquid carrier medium and particles of a semiconductor substance, with the aid of a vibrating / evaporating device included in this tunnel arrangement in the upper tunnel block by evaporating the low-boiling liquid carrier medium to effect precipitation of a micrometer-high layer of the combination of this high-boiling liquid carrier medium and these particles of this substance on the subsequent semiconductor substrate portions moving continuously underneath it.

111. A method according to Claim 110, characterized in that, like the use of the combination of low-boiling liquid carrier medium and particles of a semiconductor substance, the uninterrupted formation of the formation takes place by evaporating this low-boiling liquid carrier medium. of a micrometer-high layer of this combination of the high-boiling liquid medium and these particles of a semiconductor substance on these successive semiconductor substrate portions moving therebetween.

112. A method according to Claim 111, characterized in that, like the use of the combination of low-boiling liquid carrier medium and particles of a very high-boiling liquid substance, the uninterrupted occurrence of the formation of a micrometer-high layer of this combination of the high-boiling liquid carrier medium and these particles of the very high-boiling liquid substance, typically a liquid adhesive substance, on these successive semiconductor substrate portions moving therebetween similarly, such successive metal foil portions function as such semiconductor substrate portions.

113. A method according to Claim 112, characterized in that, as seen in this upper tunnel block, viewed in the direction of movement of these successive semiconductor substrate portions moving therethrough, the recording of a second vibrating / evaporating device thereafter takes place, as a result of which evaporation takes place. of this higher-boiling liquid carrier medium from this applied layer, thereby causing extrusion of the evaporated liquid medium therefrom, thereby forming a sufficiently uniform micrometer-high layer of this liquid adhesive substance thereon.

114. A method according to Claims 112 and 113, characterized in that, with the aid of this second device 2 5 ', exclusively the evaporation of this high-boiling liquid adhesive substance takes place and in a subsequent tunnel section the occurrence of an oven treatment of this layer to form a (sub) micrometer-high layer of this liquid adhesive substance.

115. A method according to Claim 111, characterized in that, like the use of the combination of low-boiling liquid carrier medium and particles of a solid semiconductor substance, the formation of the low-boiling liquid carrier medium takes place without interruption by forming of a micrometer-high layer of this combination of the high-boiling liquid carrier medium and these particles of a solid substance on these subsequent semiconductor substrate portions moving therebetween.

116. A method according to Claim 115, characterized in that, like the use of the combination of low-boiling liquid carrier medium and particles of a solid semiconductor substance, the uninterrupted occurrence of the low-boiling liquid carrier medium takes place through this evaporation of this low-boiling liquid carrier medium. formation of a micrometer-high layer of this combination of the high-boiling liquid medium and these particles of this solid substance on these successive, continuously moving semiconductor substrate sections underneath it.

117. A method as claimed in Claim 116, characterized in that, as in this upper tunnel block, the incorporation of a second vibrating / evaporating device, the uninterrupted occurrence of evaporation of this higher-boiling liquid carrier medium from said applied layer takes place thereby from expulsion therefrom of the evaporated liquid medium to form a sufficiently uniform micron high layer of this solid semiconductor substance thereon.

118. A method according to claim 117, characterized in that, as in a subsequent strip-shaped oven section, with the rear part of this second device typically functioning as such a heat source, the fusion of the remaining micron high layer of particles of this solid semiconductor substance with the formation of a micron high liquid layer thereof, in a subsequent tunnel section by cooling thereof the realization of a micron high, sufficiently uniform layer of this substance in a solid form thereof.

119. A method according to any one of the preceding Claims, characterized in that, as at least locally in this tunnel arrangement, the inclusion of a number of successive semiconductor treatment sections, including such a strip-shaped vibrator / evaporator in its upper tunnel block, and in front of it such a strip-shaped device for the uninterrupted supply of the combination of liquid carrier medium and particles of a solid-state semiconductor substance, typically a dielectric substance, and behind such a strip-shaped discharge section for the discharge of the this device produces vaporous medium produced by evaporation of this liquid carrier medium, the interposition of a strip-shaped medium slot arrangement using gaseous lock medium, thereby keeping these successive semiconductor treatment sections separate therewith and also of these applied semiconductor layers.

120. A method according to Claim 119, characterized in that only after a number of these superimposed semiconductor layers have been built up, layers of particles of this semiconductor substance are there such a furnace treatment for the purpose of at least co-occurrence of the fusion of these applied layers of particles of this semiconductor substance and, in a subsequent tunnel section, by cooling thereof, bringing about a micrometer-high total layer in a solid state thereof.

121. A method according to Claim 120, characterized in that the uninterrupted occurrence of fusing these applied micrometer high layers also takes place with at least the upper part of an already applied layer of a semiconductor substance in a solid form thereof .

122. Method according to Claim 120, characterized in that the anchoring of this applied total layer of a typical dielectric substance to the micrometer-high layer of a semiconductor bonding substance effected in a preceding tunnel section is thereby also effected.

123. A method according to Claim 122, characterized in that such anchoring takes place with the temporary or non-temporary adhesive layer applied in a preceding tunnel section on the subsequent, continuously moving, typical metal foil or tape underneath it.

124. A method according to Claim 119, characterized in that, like the functioning of this last vibrating / evaporating device, also as a heat source, thereby also the already fusing of these particles of dielectric substance and this, in part, with the upper portion of an already applied layer of whether or not the same semiconductor substance takes place.

125. A method according to Claim 119, characterized in that just as each of these vibrating / evaporating devices is also connected to such an electric vibration generating device, the continuous occurrence of the generation of electric vibrations having such a frequency thereof, that it is applicable to such a device.

126. A method according to Claim 125, characterized in that already in the device above such a strip-shaped medium supply device there is to that end a sufficient pre-heating of such a combination of liquid carrier medium and particles of a semiconductor. substance in a solid form.

127. A method as claimed in any one of the preceding Claims, characterized in that, as in a strip-shaped section of the upper tunnel block behind the accommodation therein of a strip-shaped medium supply device for the combination of liquid carrier medium and particles of a solid semiconductor substance, a strip-shaped exchangeable upper block, in which the accommodation of a compartment containing such a strip-shaped evaporator / vibrator 30 and typically such a subsequent medium discharge section, with connection thereto of a discharge system for the medium evaporated by means of this device for the purpose of maintaining an at least very high-frequency vibration condition of the strip-shaped bottom wall portion of this top block and wherein below this block in the sub-tunnel block also the accommodation of an exchangeable bottom block, also containing a strip-shaped compartment, in which the reception of a camshaft arrangement with the strip-shaped pressure wall portion of this above lower block for the purpose of supplying liquid medium via a strip-shaped feeder in this sub-tunnel block, effecting and subsequently maintaining a micrometer-high film thereof between this pressure-wall portion and the subsequent semiconductor substrate portions moving continuously above it, with with the aid of this evaporator / vibrator and this camshaft arrangement the uninterrupted occurrence of a semiconductor treatment process under the vibrating condition of this above evaporator / vibrator in combination with a vibrating condition of the subsequent semiconductor substrate sections.

128. A method according to Claim 127, characterized in that just as this vibration / evaporation device is also connected to such an electric vibration generating device, therein the continuous occurrence of the generation of electric vibrations with a vibration for this vibration / evaporator device most suitable form and frequency thereof.

129. A method according to Claim 127, characterized in that, like the cams of this camshaft arrangement, viewed in the direction of movement thereof, have a short ascending height and thereafter a relatively long descending height thereof for the purpose of maintaining a rapid upward displacement and a subsequent slow downward displacement of this pressure wall portion and hence also of these successive semiconductor substrate portions moving thereabove, contributing therewith at least to a maximum deposition of solid particles of such a semiconductor substance thereon under the formation of a micrometer-high layer thereof.

130. A method according to Claim 127, characterized in that, like said cams, viewed in the direction of movement thereof, they have a relatively long ascending height and thereafter a short descending height thereof for the purpose of maintaining a slow upward displacement therewith and a subsequent rapid downward displacement of this pressure wall portion and, consequently, also of these successive semiconductor substrate portions moving thereabove, the fluid medium with which also with the aid of supplied liquid semiconductor treatment medium, the occurrence of an optimum expulsion / removal of particles of typically a solid semiconductor substance from the top layer of these successive substrate portions and the recesses (crevices) arranged therein in a preceding tunnel portion or an optimum cleaning, etching, stripping or rinsing process thereof .

131. A method according to Claim 129, characterized in that, as the cams of this lower camshaft arrangement, viewed in the direction of movement thereof, contain such a short ascending height and thereafter a relatively long descending height thereof, it also with the aid of this superficial vapor / vibrator, thereby also serving as a substantial heat source, the uninterrupted effect of a micron high layer of molten dielectric substance on the already applied micron high layer of also a dielectric subtance in a solid form thereof and this under an anchoring condition thereof with this layer.

132. A method as claimed in any one of the preceding Claims, characterized in that, such a strip-shaped electric vibrator / heating device is a transducer arrangement, the maintenance of a least one with it. high-frequency, typically a UHF or MHF vibration condition of the semiconductor treatment medium in the upper slit below.

133. A method according to Claim 132, characterized in that, as therein, the use of at least one, relatively thin strip-shaped rectangular dielectric disk, which is adhered to the pressure wall portion of an exchangeable transducer block and against the thin-walled top its electrode plate and this tunnel arrangement are furthermore designed in such a way that the use of such an electric vibration-generating device for this purpose, with which the supply of the vibrating electric current under the combination of a considerably high vibration voltage and an at least very high high vibratory frequency.

134. Method as claimed in any of the foregoing Claims, characterized in that, as in the two parts of this tunnel arrangement on either side of the central semiconductor upper slit part, which is typically included as a recess within the two transverse ends of the upper tunnel block, recording of a medium slot arrangement and wherein both of these slot arrangements are typically located above these successive, continuous metal-foil or tape portions moving continuously through it as a semiconductor backing of these successive substrate portions during their movement therethrough therewith with the aid of typical gaseous lock medium, the uninterrupted occurrence of the locking of the primary central slit portion, in which the co-uninterrupted occurrence of the subsequent semiconductor treatments of these successive, continuously moving semiconductor substrate sections underneath, of the secondary, following r underside part. 25

135. Method of the semiconductor tunnel arrangement, in which the incorporation of a plurality of electric vibrators in at least the upper tunnel block thereof and which have already been described in several preceding Claims, characterized in that thereby at least partly with the aid of it the realization of a typically ultra-flatness of the successive semiconductor substrate portions obtained at their output side, from which in a subsequent device the semiconductor chips are obtained by dividing them.

A method as claimed in any one of the preceding Claims, characterized in that, as in the upper tunnel block, the accommodation of such a typically interchangeable strip-shaped vibration / heating device, and thereby against the lower wall of its lower electrode, are applied of a micrometer high typically teflon layer, thereby contributing at least during the operation thereof to the avoidance of adherence of particles of a semiconductor substance 5 and this in particular a liquid adhesive substance against it.

137. Method of the semiconductor tunnel arrangement as claimed in any of the foregoing Claims, characterized in that they are also applicable to the other semiconductor tunnel arrangements, which are indicated and described in the other applications filed simultaneously with this Patent Application. Patent applications.

138. A method according to Claim 137, characterized in that, in addition to this semiconductor tunnel arrangement, the use of several of the methods indicated and described in these other Patent applications. 1037068