KR101029894B1 - Container and method for filling solid organometallic compound - Google Patents

Abstract

An object of the present invention is to provide a novel filling container capable of stably supplying a solid organometallic compound to a gaseous epitaxial growth apparatus such as a MOCVD apparatus at a constant concentration for a long time.

The filling container for a solid organometallic compound of the present invention is a filling container for a solid organometallic compound having a carrier gas inlet (2) and a carrier gas outlet (3), wherein the inside of the filling container has a plurality of vertical spaces. It is characterized by having a structure which is divided into and the carrier gas introduced from the carrier gas inlet 2 flows through each vertical space and is discharged from the carrier gas outlet 3.

Carrier Gas Inlet, Carrier Gas Outlet, Opening, Channel, Filling Inlet

Description

Filling container for solid organometallic compound and its filling method {Container and method for filling solid organometallic compound}

1: (A) is a schematic cross section which shows one Embodiment of the filling container of this invention, FIG. 1 (B) is the top view, and FIG. 1 (C) is the perspective view.

2: (A) is a schematic cross section which shows one Embodiment of the filling container of this invention, and FIG. 2 (B) is its top view.

3: (A) is schematic sectional drawing which shows one Embodiment of the filling container of this invention, and FIG. 3 (B) is the top view.

4: (A) is a schematic cross section which shows one Embodiment of the filling container of this invention, and FIG. 4 (B) is its top view.

It is a perspective view which shows one Embodiment of the partition and opening part in the filling container of this invention.

It is a perspective view which shows one Embodiment of the partition and opening part in the filling container of this invention.

7: (A) is a schematic cross section which shows one Embodiment of the filling container of this invention, FIG. 7 (B) is its top view, and FIG. 7 (C) is its perspective view.

8: (A) is a schematic cross section which shows one Embodiment of the filling container of this invention, FIG. 8 (B) is its top view, and FIG. 8 (C) is its perspective view.

Fig. 9A is a perspective view showing one embodiment of the flow path of the present invention, and Fig. 9B is a sectional view thereof.

FIG. 10 (A) is a perspective view showing one embodiment of a communication flow passage having a structure in which a partition wall in the filling container of the present invention also serves as a flow passage, and FIG. 10 (B) is a cross-sectional view thereof.

FIG. 11: (A) is a perspective view which shows one Embodiment of the communication flow path of the structure in which the partition in the filling container of this invention also uses a flow path, and FIG. 11 (B) is sectional drawing.

FIG. 12 (A) is a schematic cross-sectional view showing an embodiment of a filling container having a connecting member in a structure in which a carrier gas inlet and a filling port in the filling container of the present invention are also used, and FIG. 12 (B) is a plan view thereof. 12 (C) is a perspective view thereof.

FIG. 13: is a figure which shows the test result (the relationship between the use ratio of trimethyl indium supplied and the trimethyl indium supply amount per hour) of the trimethyl indium supply stability in Example 1. FIG.

It is a figure which shows the test result (the relationship between the use ratio of trimethyl indium supplied and the supply amount of trimethyl indium per hour) of the trimethyl indium supply stability in the comparative example 1. FIG.

FIG. 15: is a schematic cross section which shows the conventional filling container A. FIG.

It is a schematic cross section which shows the conventional filling container B. FIG.

It is a schematic cross section which shows the conventional filling container C.

<Brief description of the main parts of the drawing>                 

1: bulkhead 2: carrier gas inlet

3: carrier gas outlet 4: opening

5: flow path 6: flow path lower opening

9: filling port 22: valve

26: connection part 2a: carrier gas inlet

3a: carrier gas outlet 7a: lower opening

8a: Euro 9a: charging port

20a: diffuser 21a: solid organometallic compound batch chamber

22a: valve 23a: columnar container

24a: filter

The present invention relates to a filling container for a solid organometallic compound and a filling method thereof. More specifically, it is a material for vapor phase epitaxial growth by Metalorganic Chemical Vapor Deposition (hereinafter abbreviated as "MOCVD") method used when manufacturing materials for electronic industry, such as a compound semiconductor. A filling container capable of supplying a solid organometallic compound to a device for vapor phase epitaxial growth stably at a constant concentration for a long time and a method for filling a solid organometallic compound.

Organometallic compounds are widely used as raw materials for producing electronic industrial materials.

As a manufacturing method of the electronic industry material using an organometallic compound, gas phase epitaxial growth by MOCVD method etc. is used a lot recently. For example, a thin film of a compound semiconductor is produced by MOCVD, and at that time, organic metal compounds such as trimethylaluminum, trimethylgallium, and trimethylindium are used as raw materials.

When using these organometallic compounds in the MOCVD method, when the organometallic compound is solid under the conditions used, the organometallic compound is usually a carrier gas inlet 2a and a carrier gas outlet 3a as shown in FIG. 15. Is filled into the filling container A, and a carrier gas such as hydrogen gas is introduced into the container from the carrier gas inlet 2a, and the organic metal compound is discharged as a gas saturated in the carrier gas from the carrier gas outlet 3a. To supply to the MOCVD apparatus.

In that case, when this organometallic compound is solid at the temperature used in said supply, the flow path which a carrier gas passes through in solid container metal A without sufficient contact with a solid organometallic compound in the filling container A. Is difficult to maintain a uniform contact state between the carrier gas and the solid organometallic compound, and it is difficult to stably supply the solid organometallic compound from the filling container A to the MOCVD apparatus stably at a constant concentration for a long time by the carrier gas. There is a problem. In addition, in the supply of the solid organometallic compound by the method using the carrier gas as described above, if the amount of the solid organometallic compound to be filled in the filling container A is increased, the solid organometallic compound which can be stably supplied to the MOCVD apparatus There is a problem that the ratio of the amount of to decreases with respect to the amount of the solid organometallic compound charged, and as a result, the amount of remaining of the solid organometallic compound in the filling container increases, so that the solid organometallic compound cannot be effectively used.

In order to solve these problems, various proposals are made regarding the method when the solid organometallic compound is filled into the filling container A. For example, in patent document 1, patent document 2, patent document 3, patent document 4, patent document 5, etc., the method of filling a filling container with a filler with a filler is proposed. For example, in patent document 6, the method etc. which fill a filling container A with a solid organometallic compound are coat | covered with an inert support | carrier, etc. are proposed.

In addition, in the method of solving the above-mentioned problem, various proposals are made regarding the structure of the filling container itself which fills a solid organometallic compound. For example, in Patent Document 7 and the like, as shown in FIG. 16, a diffuser 20a is formed in the carrier gas inlet for uniformizing the gas, and the carrier gas is uniformly distributed to the solid organic metal compound. Filling container B is proposed.

For example, in patent document 8 etc., the filling container C which has the solid organometallic compound arrangement chamber 21a which has air permeability as shown in FIG. 17 is proposed.

[Patent Document 1] Japanese Patent Publication No. Hei 5-39915

[Patent Document 2] Japanese Patent Publication Hei 6-20051                         

[Patent Document 3] Japanese Patent Application Laid-Open No. 7-58023

[Patent Document 4] Japanese Patent Application Laid-open No. Hei 8-250440

[Patent Document 5] Japanese Patent Application Laid-open No. Hei 8-299778

[Patent Document 6] Japanese Patent No. 261530

[Patent Document 7] Japanese Patent Publication No. 2-124796

[Patent Document 8] Japanese Patent Application Laid-Open No. 10-223540

However, the conventional filling container A has a carrier gas inlet 2a and a carrier gas outlet 3a in a single container as shown in Fig. 15, and the filling container A is filled inside the filling container from the lower portion of the carrier gas outlet. It is of the structure provided with the dip tube which has the lower opening 7a as the flow path 8a to the vicinity of a bottom part. As a result of the investigation by the present inventors, when using the container A of the structure of FIG. 15, when supplying a solid organometallic compound to a MOCVD apparatus in the method using a carrier gas, the supply period of the organometallic compound by a carrier gas becomes long. As a result, it has become apparent that there is a phenomenon in which the supply amount of the organometallic compound in the carrier gas gradually decreases. In particular, increasing the amount of charge of the solid organometallic compound or increasing the carrier gas flow rate significantly reduces the effect on the supply stability of the solid organometallic compound. Thus, in the filling container A, sufficient effect is not acquired when supplying a solid organometallic compound to MOCVD apparatus stably for a long time.

In addition, for various types of filling containers other than Fig. 15, the method using a carrier gas is insufficient when the solid organometallic compound is supplied to the MOCVD apparatus stably for a long time, or the appearance shape of the filling container is significantly increased. There is a problem.

Thus, the conventional filling container for solid organometallic compounds has various problems, and improvement is desired regarding the supply stability of the solid organometallic compound, the appearance shape of the filling container not remarkably increasing, and the like.

SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems, and provides a novel filling container capable of supplying a solid organometallic compound to a gas phase epitaxial growth apparatus such as a MOCVD apparatus stably at a constant concentration for a long time and a solid organometallic compound in the filling container. It is about how to charge.

In order to solve the above-mentioned problems, the present inventors have studied. As a result, the internal structure of the filling container has a novel structure having the characteristics shown below, so that the appearance shape thereof is not significantly increased as compared with the conventionally known filling container. It has been found that the supply of solid organometallic compounds to vapor phase epitaxial growth devices such as MOCVD apparatuses can be stably performed at a constant concentration, and the period of stably supplying the solid organometallic compounds is improved, thereby completing the present invention. I was.

That is, in the filling container for a solid organometallic compound having a carrier gas inlet and a carrier gas outlet, the inside of the filling container is divided into a plurality of vertical spaces, and the carrier gas introduced from the carrier gas inlet is It relates to a filling container for a solid organometallic compound, characterized by having a structure in which each vertical space is distributed and discharged from a carrier gas outlet.

More specifically, the present invention relates to a filling container for a solid organometallic compound, comprising the following requirements (a) to (c).

In the filling container for a solid organometallic compound,

(a) the interior of the filling container is partitioned longitudinally into at least one or more partitions so that the interior of the filling container is partitioned into at least two spaces;

(b) a space inside the filling container formed by partitioning the partition wall, the space having a carrier gas inlet and a space having a carrier gas outlet;

(c) A partition in the interior of the filling container, wherein the partition wall has a partition having an opening for circulating the carrier gas from the carrier gas inlet to the carrier gas outlet through each space in the filling container.

Moreover, in the filling container for solid organometallic compounds of this invention, the filling opening for filling a solid organometallic compound can be provided in the space inside the filling container formed by partitioning with a partition.

Moreover, in the filling container for solid organometallic compounds of this invention, trimethyl indium can be used as a solid organometallic compound.

Furthermore, this invention relates to the filling method of the solid organometallic compound characterized by filling a solid organometallic compound in said filling container for solid organometallic compounds of this invention.                     

Embodiment of the Invention

The structure of the filling container of the present invention is not particularly limited as long as the internal space is divided into a plurality of vertical spaces, and the carrier gas flows through each vertical space.

EMBODIMENT OF THE INVENTION Below, the filling container for solid organometallic compounds of this invention, and its filling method are demonstrated in detail using drawing.

An example of the filling container for solid organometallic compounds of this invention is shown to FIGS. As shown in FIGS. 1-4, the filling container for solid organometallic compounds of this invention partitions the inside of a filling container in the longitudinal direction by at least 1 or more partition walls 1, and is divided into at least 2 or more spaces. Has a structure. The partition system of the space by the partition wall 1 has the structure which divided the space as shown, for example in FIGS.

The outer shape of the filling container may be, for example, a container having a columnar shape such as a triangular column, a square column, a pentagonal column, a hexagonal column, or the like, in addition to the cylindrical container as shown in FIGS. 1 to 4.

Moreover, the filling container for solid organometallic compounds of this invention has the carrier gas introduction port 2 which communicates with one space inside the filling container created by partitioning with the partition 1, and the carrier gas discharge port which passes through one of the remaining spaces. As a structure which has (3), the thing of the structure of FIGS. 1-4 is mentioned, for example. The carrier gas is introduced from the carrier gas inlet 2 into the filling container filled with the solid organometallic compound, and the inside of the filling container is passed through, and the organic metal compound is discharged from the carrier gas outlet 3 as a gas saturated in the carrier gas. To the MOCVD apparatus. The mounting position of the carrier gas inlet 2 and the carrier gas outlet 3 to the filling container is, for example, a filling container depending on the partition system of the space by the partition wall 1, the form of use of the filling container, or the like. There is a structure having a carrier gas inlet 2 and a carrier gas outlet 3 at an upper portion thereof, or, for example, a structure having a side surface of the filling container.

In the partition 1 inside the filling container of the present invention, as shown in FIGS. 1 to 4, the carrier gas is transferred from the carrier gas inlet 2 to the carrier gas outlet 3 through each space in the filling container. It is characterized by having the partition 1 provided with the opening part 4 for making it flow.

As an example of the partition 1 provided with this opening part 4, the thing of the structure of FIGS. 5-6 is mentioned, for example.

The positions of these openings 4 are such that the carrier gas sufficiently flows from the carrier gas inlet 2 to the carrier gas outlet 3 through the space filled with the solid organometallic compound, and the solid organometallic compound filled at that time is There is no particular limitation as long as it is in sufficient contact with the carrier gas and there is no problem in the stable supply of the organometallic compound. Particularly, in order to effectively saturate the filled solid organometallic compound with the carrier gas, an opening for flowing the carrier gas 4 ), In the case of arranging the opening portion 4 below the partition wall 1, one third or less of the inner height of the container from the inner bottom surface of the filling container, preferably one fifth or less, and more preferably one When the opening 4 is provided at a position equal to or less than / 10 and the opening 4 is disposed above the partition 1, the height of the inside of the container is determined from the inner bottom of the filling container. The opening part 4 is provided in the position of 2/3 or more, Preferably it is 4/5 or more, More preferably, it is 9/10 or more.

In the filling container of the present invention, the carrier gas flows through each of the divided spaces and is discharged from the carrier gas discharge port 3.

In the filling container of the present invention, as an example of the partition wall 1 having the openings 4 described above, an example in the case where the partition wall 1 is one sheet, for example, the structure shown in FIG. In addition, as an example in the case where two partitions 1 are two pieces, the thing of the structure shown in FIG. 2 appears, for example, and also as an example in the case of three or more partitions 1, for example, FIG. The structure shown in FIG. 4 can be shown.

Moreover, depending on the position of the opening part 4 provided in the partition 1, the whole space is circulated through the opening part 4 from the carrier gas inlet port 2, and the carrier gas discharge port 3 is carried out. In order to distribute | circulate, it can be set as the structure which provided the flow path 5 in each of the carrier gas introduction port 2 and the carrier gas discharge port 3, respectively. As an example of the filling container which has the structure which formed the flow path 5 in each of this carrier gas introduction port 2 and the carrier gas discharge port 3, the thing of the structure as shown in FIG. 7, FIG. 8 can be shown, for example. have.

The said flow path 5 is a tubular thing as shown in FIG. 9, for example, but has a flow path lower opening 6 in the lower part of the structure partitioned by the partition 1 like FIG. 10 or FIG. Etc. can be used. The flow path 5 may be a combination of these tubular structures or those having a flow path lower opening 6 below the structure partitioned by the partition wall 1.

The position of the flow path lower opening 6 of this flow path 5 is 1/3 or less, preferably 1/5 or less, more preferably 1/10 or less of the inside height of the container from the inner bottom surface of the filling container. It is preferable to install in.

The distribution form of the carrier gas in the filling container of this invention is demonstrated based on FIG. First, the carrier gas is introduced from the carrier gas inlet 2 and flows through the space having the carrier gas inlet 2. Carrier gas distributes each space through the opening part 4, is discharged from the carrier gas discharge port 3, and is supplied to MOCVD apparatus. On the other hand, although the distribution form of carrier gas was demonstrated based on FIG. 1, when the inside of a filling container is partitioned into three or more spaces, as shown in FIGS. 2-4, by the opening part 4 formed in each partition 1, The carrier gas will flow.

In this distribution mode, in the structure in which the flow path 5 is formed in each of the carrier gas inlet 2 and the carrier gas outlet 3 as shown in FIG. 7, the carrier gas is formed from the carrier gas inlet 2. It introduces and distributes the flow path 5, and distributes the inside of the space which has the carrier gas introduction port 2. As shown in FIG. Carrier gas distributes each space through the opening part 4, distributes the flow path 5 formed in the carrier gas discharge port 3, discharges from the carrier gas discharge port 3, and supplies it to a MOCVD apparatus.

When the solid organometallic compound is filled into the filling container of the present invention and used for supplying the organometallic compound to the MOCVD apparatus, the solid organometallic compound is filled into the space inside the filling container.                     

In the filling container for a solid organometallic compound of the present invention, as a method for filling the solid container with a solid organometallic compound, a method known so far can be used as it is, for example, a sublimation of a solid organometallic compound A method of introducing and filling into a filling container by means of, or a method of, for example, introducing and filling an organometallic compound into a filling container as saturated vapor in a carrier gas, or, for example, a melting point of an organometallic compound. The method of heating to the above, making it into a liquid phase, and introducing into a filling container can be used.

Moreover, in the filling container for solid organometallic compounds of this invention, the filling opening 9 for filling a solid organometallic compound in the space inside the filling container formed by partitioning with the partition 1 can also be formed. By forming this filling port 9, it becomes possible to inject a solid organometallic compound in a solid state. In this invention, the filling port of a filling container can be formed in the upper part of a filling container, for example as shown in FIGS. In addition, the carrier gas inlet 2 and / or the carrier gas outlet 3 and the carrier gas outlet 3 and the filling port 9 are formed by separating the carrier gas inlet 2 and / or the carrier gas outlet 3 from the filling container. ) Can be used as a structure. The separated carrier gas inlet 2 and / or the carrier gas outlet 3 and the filling container are used again through the connecting part 26. As an example of this structure, for example, as shown in Fig. 12, between the carrier gas inlet 2 and the filling container, a connecting part 26 that can be separated as a filling port is formed, and it is used to be connected again through this. Can be mentioned.

In addition, according to the filling method of a solid organometallic compound, said filling port may be provided to the filling container, and may not be provided.

On the other hand, in the filling container of the present invention, for example, as shown in Figs. 1 to 4, the carrier gas inlet 2 and the carrier gas outlet 3 may be provided with a valve 22 that can be opened and closed. In the case of carrier gas distribution, when the valve 22 is opened and the organometallic compound is not supplied, the solid organometallic compound is contaminated from the outside with the valve normally closed or outside the filling container. Prevents sublimation and multiplication

As described above, in the filling container of the present invention, the inside of the filling container is partitioned into a plurality of spaces by the partition wall 1, and the carrier gas introduced from the carrier gas inlet 2 is filled with the solid organic metal in each container space. In all spaces, the compound passes through the top of those spaces to the bottom of the space and flows to the carrier gas outlet 3. In this way, the inside of the container is partitioned into partitions 1 and partitioned into a plurality of spaces, so that the cross-sectional area of each space is reduced, and the contact between the carrier gas and the solid organometallic compound is sufficiently performed. Thus, the carrier is not formed as in the prior art. The contact state of the gas and the solid organometallic compound can be maintained uniformly, and the carrier gas makes it possible to stably supply the solid organometallic compound from the filling vessel to the MOCVD apparatus at a constant concentration for a long time.

About the solid organometallic compound which can be filled and used for the filling container of this invention, not only the solid organometallic compound used by the filling container known so far but also other solid organometallic compound, supply use temperature using a carrier gas, In terms of pressure, it is applicable that there is a saturated vapor pressure that can be met for the desired feed for the carrier gas and that it is solid under the feed conditions. Representative examples of these solid organometallic compounds include alkyl metal compounds, metallocene compounds, β-diketone complexes, and adduct compounds. Specific examples thereof include trimethylindium and dimethylchloro. Alkyl metal compounds such as indium, triphenylaluminum, triphenylbismuth, tert-butyllithium, cyclopentadienyl indium, biscyclopentadienyl magnesium, biscyclopentadienyl manganese and ferrocene , Barium acetylacetonate complex, strontium acetylacetonate complex, copper acetylacetonate complex, calcium acetylacetonate complex, barium dipyvaloyl methate complex, strontium dipyvaloyl methate complex, copper dipivaloyl methate complex, yttrium Β-diketone complexes such as dipivaloyl methate complex, calcium dipivaloyl methate complex, and trimethyl phosphorus And trimethyl arsine air ducts, there may be mentioned trimethyl indium-trimethyl phosphine and air ducts, air ducts compounds such as barium carbonate and Diffie fours days meth 1,10-phenanthroline (phenanthroline) air ducts and the like.

In addition, the pressure at the time of using the filling container of this invention can be used, without changing the conditions currently used by the filling container known so far, and if a solid organometallic compound is supplied to MOCVD apparatus stably for a long time, a restriction | limiting in particular will be carried out. None, pressurization, atmospheric pressure, or reduced pressure can be used, but is usually used under reduced pressure from the vicinity of normal pressure.

Moreover, about the temperature at the time of using the filling container of this invention, it is applicable without changing the conditions currently used by the filling container known so far, and the solid organometallic compound used normally meets the desired supply with respect to a carrier gas. The conditions under which a saturated vapor pressure which can be obtained are obtained and which are solid under supply conditions are applicable.

In the filling container of the present invention, any carrier gas can also be used in the filling container known so far. For example, an inert gas such as nitrogen, argon, helium or hydrogen gas is used.

Moreover, in the filling container of this invention, the known filler used with the solid organometallic compound in the filling container known so far can be used. As this filler, stainless steel, glass, ceramics, a fluororesin, etc. are used as the material, Preferably, stainless steel can be used. As the shape of the filler, various shapes such as an annular shape, a square shape, a cylindrical shape, a coil shape, a spring shape, a sphere shape, and the like can be used. And various packings for distillation, for example, Dixon packing, helipack, Fenske and the like can be used. Fibrous fillers can also be used.

In the filling container of this invention, these fillers can also be filled with a filling container by the method known so far, and can be used with a solid organometallic compound.

On the other hand, the filling container of the present invention can be used not only for the solid organic metal compound but also for filling containers of general solid materials such as solid inorganic compounds, solid organic compounds, or solid metals having a vapor pressure. Thus, the filling container of this invention can be used also as a filling container for discharging other solid substance instead of a solid organometallic compound as a gas saturated with a carrier gas using a carrier gas.

Hereinafter, an Example demonstrates this invention in detail.

&Lt; Example 1 >

The supply stability of the solid organometallic compound was tested using trimethylindium as the solid organometallic compound in the filling vessel shown in FIG. 7.

The test of supply stability was done with the following method.

In a nitrogen atmosphere, 400 g of trimethyl indium and 647 g of stainless filler were filled in the filling port 9 in a SUS filling container having an outer diameter of 76.0 mm phi as shown in FIG. 7.

Next, the carrier gas outlet 3 was connected to a trap cooled with dry ice methanol for trimethyl indium collection. The piping connecting the carrier gas outlet 3 and the trap cooled by dry ice-methanol was heated, and trimethyl indium did not precipitate in this piping. The filling container containing trimethyl indium and a filler was immersed in a 25 degreeC thermostat, and nitrogen gas was discharged from the carrier gas inlet 2 of a filling container on the conditions which made the pressure in the apparatus system of a supply stability test into the vicinity of atmospheric pressure. The weight of trimethyl indium collected in the trap cooled by 500 cc every minute and cooled with dry ice methanol every 8 hours was measured. In addition, the gas phase gas concentration of the carrier gas containing the vapor of trimethyl indium was measured with the ultrasonic type gas concentration meter (brand name Epison: product of Thomas Swan Co., Ltd.).                     

The result is shown in FIG. In the vertical axis of the graph shown in FIG. 13, the supply amount of trimethyl indium per hour was shown on the vertical axis, and the use ratio of trimethyl indium supplied on the horizontal axis was expressed in weight%.

As a result of the test of supply stability, when the filling container of this invention was used, the supply rate of trimethyl indium was stabilized to 62 weight% of the use ratio.

Thus, by using the filling container of FIG. 7, supply of a solid organometallic compound can be performed stably at a constant concentration, and it is possible to increase the use ratio of a solid organometallic compound under the conditions from which a stable supply rate was obtained. Become. As a result, the period of stably supplying a solid organometallic compound can be improved by using the filling container of this invention.

Comparative Example 1

In the conventional filling container A of Fig. 15, trimethylindium was charged as a solid organometallic compound, and the supply stability of the solid organometallic compound was tested in the same manner as in Example 1. The result is shown in FIG. As a result of the test of supply stability, when the conventional filling container A of FIG. 15 was used, the supply rate of trimethyl indium was stabilized to 35 weight% of the use ratio.

According to the present invention, in the filling container for a solid organometallic compound, the filling container is partitioned in a vertical direction by a partition wall to form a plurality of spaces, and the spaces of the carrier gases are distributed to each other to form a structure in which the carrier gas flows. It is possible to supply a solid organometallic compound to a gaseous epitaxial growth apparatus such as a MOCVD apparatus stably for a long time without increasing the appearance shape.

Claims (10)

delete In the filling container for a solid organometallic compound, (a) the interior of the filling container is partitioned longitudinally into at least one or more partitions so that the interior of the filling container is partitioned into at least two spaces; (b) a space inside the filling container formed by partitioning the partition wall, the space having a carrier gas inlet and a space having a carrier gas outlet; (c) a partition in the interior of the filling container, the partition having a partition having an opening for circulating the carrier gas from the carrier gas inlet to the carrier gas outlet through each space in the filling container; And In the opening portion, when the opening portion is disposed below the partition wall, from the inner bottom surface of the filling container, from the inner bottom surface of the filling container, A filling container for a solid organometallic compound, wherein openings are provided at positions two-thirds or more of the height inside the container. delete The filling container for solid organometallic compounds according to claim 2, further comprising a filling port for filling the solid organometallic compound into a space inside the filling container formed by partitioning the partition wall. The filling container for solid organometallic compounds according to claim 2, further comprising a filling port for filling the solid organometallic compound into a space inside the filling container formed by partitioning the partition wall. The filling container according to claim 2, wherein the solid organometallic compound is trimethylindium. The filling container according to claim 2, wherein the solid organometallic compound is trimethylindium. The filling container according to claim 4, wherein the solid organometallic compound is trimethylindium. The filling container according to claim 5, wherein the solid organometallic compound is trimethylindium. The solid organometallic compound is filled into the filling container for solid organometallic compounds in any one of Claims 2-9, The filling method of the solid organometallic compound characterized by the above-mentioned.

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