JPH02172889A - Cylinder for vapor growth - Google Patents
Cylinder for vapor growthInfo
- Publication number
- JPH02172889A JPH02172889A JP32624688A JP32624688A JPH02172889A JP H02172889 A JPH02172889 A JP H02172889A JP 32624688 A JP32624688 A JP 32624688A JP 32624688 A JP32624688 A JP 32624688A JP H02172889 A JPH02172889 A JP H02172889A
- Authority
- JP
- Japan
- Prior art keywords
- cylinder
- filter
- org
- metal compd
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 claims abstract description 9
- 150000002902 organometallic compounds Chemical class 0.000 claims description 21
- 238000001947 vapour-phase growth Methods 0.000 claims description 19
- 239000002184 metal Substances 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000012159 carrier gas Substances 0.000 abstract description 11
- 239000007789 gas Substances 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 241000700560 Molluscum contagiosum virus Species 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、Ｍ ＯＣＶ Ｄ （Ｍｅｔａｌｏｒｇａｎｉ
ｃ Ｃｈｅｍｉｃ−ａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔ
ｉｏｎ）やＭ ＯＭ Ｂ Ｅ （Ｍａｔａｌｏｒｇａ−
ｎｉｃ Ｍｏ１ｅｃｕｌａｒ Ｂｅａｔｓ Ｅｐｉｔａ
ｘｙ）等の方法により、基板上に金属又はその化合物を
気相成長させ、全屈薄膜あるいは化合物半導体膜等を形
成させるための気相成長装置へ原料を供給するために用
いられる気相成長用シリンダーに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention is directed to MOCV D (Metalorgan
c Chemical-al Vapor Deposit
ion) and MOMBE (Matalorga-
nic Mo1ecular Beats Epita
For vapor phase growth, which is used to supply raw materials to a vapor phase growth apparatus for vapor phase growth of a metal or its compound on a substrate to form a fully refracted thin film or a compound semiconductor film, etc., using methods such as xy). Concerning cylinders.
［従来の技術］
化合物半導体膜や金属膜等を形成するためのエピタキシ
ャル成長法として、界面の急峻性、量産性に優れる気相
成長法が広く採用されている。ＭＯＣＶＤ法は有機金属
化合物をガスとして送り、高温下にウェハー上でこのガ
スを分解或いは反応させ、ウェハー上にこの金属或いは
化合物の単結晶薄膜を成長させるものである。[Prior Art] As an epitaxial growth method for forming compound semiconductor films, metal films, etc., a vapor phase growth method is widely used because of its excellent interface steepness and mass productivity. The MOCVD method is a method in which an organometallic compound is sent as a gas, and this gas is decomposed or reacted on a wafer at a high temperature to grow a single crystal thin film of the metal or compound on the wafer.
またＭＯＭＢＥ法は、有機金属化合物の分子ビームを送
り、高真空下で前述と同様に単結晶薄膜を成長させるも
のである。このような方法においては、原料を分解、反
応部に供給する必要があり、一般に常温付近で適当な蒸
気圧を有する有機金属化合物が用いられている。In the MOMBE method, a molecular beam of an organometallic compound is sent to grow a single crystal thin film under high vacuum in the same manner as described above. In such a method, it is necessary to decompose the raw material and supply it to the reaction section, and generally an organometallic compound having an appropriate vapor pressure at around room temperature is used.
ところで、この有機金属化合物は、もっばら常温で液体
のものが用いられ、このための供給装置として、シリン
ダー内にデツプチューブを挿入し、その先端下部に１〜
１００μのポーラスな分散器を取付けたもの（特開昭６
２−８３４００号公報）が提案されている。By the way, this organometallic compound is usually liquid at room temperature, and as a supply device for this purpose, a dip tube is inserted into the cylinder, and 1 to
Equipped with a 100μ porous disperser (Japanese Patent Application Laid-Open No.
2-83400) has been proposed.
しかし、有機金属化合物のなかにはトリメチルインジウ
ムやシクロペンタジェニルマグネシウム等のように、使
用温度で固体状態を呈するものもある。この場合は、上
記方法では、分散器の周りの固体のみがガス化して空洞
化し、有機金属のガスが均等に排出せず１組成の均等な
単結晶薄膜が成長しなかった。これを改善するために、
シリンダー下部の内径をシリンダー上部の内径より狭め
、この狭径部の上に傾斜部を設けた装置（特開昭６３−
１１５９８号公報）が提案されている。However, some organometallic compounds, such as trimethylindium and cyclopentadienylmagnesium, exhibit a solid state at the operating temperature. In this case, in the above method, only the solid around the disperser was gasified and formed into a cavity, and the organometallic gas was not evenly discharged, so that a uniform single crystal thin film of one composition could not be grown. To improve this,
A device in which the inner diameter of the lower part of the cylinder is narrower than the inner diameter of the upper part of the cylinder, and a sloped part is provided above this narrow diameter part (Japanese Patent Application Laid-Open No. 63-1998)
11598) has been proposed.
しかしながら、上記方法も、供給開始直後は均一な組成
の有機金属ガスが排出されるものの。However, even in the above method, an organometallic gas having a uniform composition is discharged immediately after the start of supply.
時間が経過するにつれて、デツプチューブの周りに空洞
が生じ、有機金属ガスが均一に排出しないようになり、
組成の均等な単結晶薄膜を得ることは困難であった。Over time, cavities form around the dip tube, preventing the organometallic gas from discharging evenly.
It has been difficult to obtain single crystal thin films with uniform composition.
［発明が解決しようとする課題］
本発明は、上記の問題を解決するためのもので１本発明
の目的は、気相成長装置へ長期に亘って、均一で一定量
の原料を供給することができ、従って組成の均等な単結
晶薄膜を得ることができる気相成長用シリンダーを提供
することにある。[Problems to be Solved by the Invention] The present invention is intended to solve the above problems.1 The purpose of the present invention is to supply a uniform and constant amount of raw material to a vapor phase growth apparatus over a long period of time. The object of the present invention is to provide a cylinder for vapor phase growth that can obtain a monocrystalline thin film with a uniform composition.
［課題を解決するための手段］
本発明の気相成長用シリンダーは、使用温度で固体状を
呈する有機金属化合物を気相成長装置へ供給する気相成
長用シリンダーにおいて、シリンダー内の下方部に多孔
質のフィルターを設け、当該フィルターの上部に有機金
属化合物の充填室を形成するとともに、当該フィルター
の下部に空室を形成したことから構成されるものである
。[Means for Solving the Problems] The cylinder for vapor phase growth of the present invention is a cylinder for vapor phase growth that supplies an organometallic compound that is solid at the operating temperature to a vapor phase growth apparatus. It is constructed by providing a porous filter, forming a chamber filled with an organometallic compound in the upper part of the filter, and forming a cavity in the lower part of the filter.
［作 用コ
本発明は、シリンダー内のフィルターの上部に有機金属
化合物を充填し、当該フィルターの下部からキャリアー
ガスを供給する場合は、有機金属化合物の底部に一様に
圧力負荷がかかり、大きな気道、空洞ができず、当該固
体をほぼ理想的な流動状態とすることができ、また逆に
、シリンダー上部からキャリヤーガスを供給する場合は
、有機金属化合物全体に一様に圧力負荷がかかり、大き
な気道、空洞ができず、ともに、当該有機金属化合物が
無くなるまで気固の平衡状態を保つことができ、これに
より、均一で一定量の原料を反応部に供給することがで
き、組成の均等な単結晶薄膜を得ることができる。[Function] In the present invention, when an organometallic compound is filled in the upper part of a filter in a cylinder and a carrier gas is supplied from the lower part of the filter, a pressure load is uniformly applied to the bottom of the organometallic compound, and a large Airways and cavities are not formed, and the solid can be kept in an almost ideal fluid state. Conversely, when a carrier gas is supplied from the top of the cylinder, a pressure load is uniformly applied to the entire organometallic compound. Large airways and cavities are not formed, and a gas-solid equilibrium state can be maintained until the organometallic compound is exhausted. This allows a uniform and fixed amount of raw material to be supplied to the reaction section, and the composition is evenly distributed. A single crystal thin film can be obtained.
［実施例］
次に、本発明の気相成長用シリンダーの好ましい態様に
ついて第１図に基づいて説明する。[Example] Next, a preferred embodiment of the cylinder for vapor phase growth of the present invention will be described based on FIG. 1.
第１図において、１はシリンダーで、このシリンダー１
の下方部に、フィルター２が設けである。このフィルタ
ー２の位置は、有機金属化合物の一回の充填量を考慮し
て、すなわち気相成長装置の能力等を考慮して、適宜選
定される。In Figure 1, 1 is a cylinder, and this cylinder 1
A filter 2 is provided at the lower part of the unit. The position of this filter 2 is appropriately selected in consideration of the amount of the organometallic compound filled at one time, that is, in consideration of the capacity of the vapor phase growth apparatus.
このフィルター２の上部が有機金属化合物の充填室３を
形成し、この中に有機金属化合物４が充填される。尚、
シリンダー１としては金属製やガラス製等を用いること
ができるが、有機金属化合物がシックスナイン以上の高
純度のものが用いられ、また気相成長反応にはアルシン
やホスフィン等のガスが併用されることを考えれば、ス
テンレス製のシリンダーを用いることが好ましい。また
、フィルター２は、多孔質のものであればよく、特には
有機金属化合物の固体が、そのまま透過しないものが好
ましく、固体有機金属化合物の粒度を考慮して、その目
開き度を適宜選定すると良い。一般には、１〜１００μ
の範囲で選定すれば充分である。また、このフィルター
２の材質としては、ステンレス。The upper part of this filter 2 forms an organometallic compound filling chamber 3, into which an organometallic compound 4 is filled. still,
The cylinder 1 can be made of metal, glass, etc., but a high purity organometallic compound of six nines or higher is used, and a gas such as arsine or phosphine is used in the vapor phase growth reaction. Considering this, it is preferable to use a stainless steel cylinder. In addition, the filter 2 may be porous, and is preferably one that does not allow the solid organometallic compound to pass through as it is.The opening degree of the filter 2 may be appropriately selected in consideration of the particle size of the solid organometallic compound. good. Generally 1~100μ
It is sufficient to select within the range of . Additionally, the material of this filter 2 is stainless steel.
ガラス等の焼結体等を用いると良い。It is preferable to use a sintered body such as glass.
一方、フィルター２の下部には、空室５が形成され、管
６を介してキャリヤーが供給される場合、この空室５に
おいて所定の圧力を付与するようにし、フィルター２上
に充填された有機金属化合物の底面全体に渡って、均一
に圧力がかかるようにすることが好ましい。この空室５
の大きさは、フィルター２の目開き度、すなわち圧力損
失の程度に応じて、適宜決定される。On the other hand, a cavity 5 is formed in the lower part of the filter 2, and when a carrier is supplied through a pipe 6, a predetermined pressure is applied in this cavity 5, and the organic material filled on the filter 2 is It is preferable to apply pressure uniformly over the entire bottom surface of the metal compound. This vacant room 5
The size of the filter 2 is appropriately determined depending on the degree of opening of the filter 2, that is, the degree of pressure loss.
圧力損失が小さい場合は大きく、大きい場合は小さくす
ると良い。If the pressure loss is small, it is better to increase it, and if it is large, it is better to decrease it.
また、このシリンダー１には、充填室３に連通する管７
及び空室５に連通する管６が、それぞれ取付けられ、こ
の管の各々にバルブ８．９が取付けである。尚、本図に
おいては、管６は、シリンダーｌの側面下部に取付けで
あるが、シリンダー１の上部より充填室３及びフィルタ
ー２を貫通して空室５に連通ずるように取付けても良い
ことは言うまでもない。The cylinder 1 also has a pipe 7 communicating with the filling chamber 3.
and a tube 6 communicating with the cavity 5, each of which is fitted with a valve 8.9. In this figure, the pipe 6 is attached to the lower side of the cylinder 1, but it may be attached so that it passes through the filling chamber 3 and the filter 2 from the upper part of the cylinder 1 and communicates with the empty chamber 5. Needless to say.
以上のような気相成長用シリンダー１においては、キャ
リヤーガスをシリンダーの上部から供給することもでき
、また逆に、下部から供給することもできる。一般に、
キャリヤーガスの量が多い場合は下部から、少ない場合
は、上部から供給する方が、安定した流量を確保できる
傾向にある。キャリヤーガスを上部から供給する場合は
、管７からキャリヤーガスが入り、有機金屑化合物４と
接触して、当該有機金属をガス化させて同伴し、フィル
ター２、空室５を介して管６を通って、分解、反応部（
図示せず）へ供給される。この場合、流量はバルブ８で
調節される。また、逆に、キャリヤーガスを下部から供
給する場合は、管６からキャリヤーガスが入り、空室５
、フィルター２を介して有機金属化合物４と接触して当
該有機金属を同伴し、管７を通って、分解１反応部へ供
給される。この場合、バルブ９で流量が調節される。尚
、キャリヤーガスとしては、水素、ヘリウム、アルゴン
、窒素等の不活性ガスを用いることができる。In the vapor phase growth cylinder 1 as described above, the carrier gas can be supplied from the upper part of the cylinder, or conversely, it can also be supplied from the lower part. in general,
If the amount of carrier gas is large, supplying it from the bottom tends to ensure a stable flow rate, and if it is small, supplying it from the top tends to ensure a stable flow rate. When the carrier gas is supplied from above, the carrier gas enters from the pipe 7, contacts the organic metal scrap compound 4, gasifies the organic metal, and passes through the filter 2 and the cavity 5 to the pipe 6. through the decomposition and reaction section (
(not shown). In this case, the flow rate is regulated by valve 8. Conversely, when the carrier gas is supplied from the bottom, the carrier gas enters from the pipe 6 and the empty space 5
, comes into contact with the organometallic compound 4 through the filter 2, entraining the organometallic compound, and is supplied to the decomposition 1 reaction section through the pipe 7. In this case, the flow rate is adjusted by valve 9. Incidentally, as the carrier gas, an inert gas such as hydrogen, helium, argon, nitrogen, etc. can be used.
去Ｊ１吐
第１図に示したようなシリンダーを用いて実験した。シ
リンダー本体は、円筒状で、内径４ｃｒａ、高さ１４ｃ
ｍで、底部から３ｃｍの位置にステンレス製の焼結フィ
ルター２〔ニュプロ（ＮＵＰＲＯ）社製、目開き度７μ
〕を取付けた。The experiment was conducted using a cylinder as shown in Figure 1. The cylinder body is cylindrical, with an inner diameter of 4cra and a height of 14cm.
m, and placed a stainless steel sintered filter 2 [manufactured by NUPRO, opening degree 7μ] at a position 3cm from the bottom.
] was installed.
このフィルター２の上部に、平均粒径１００μのトリメ
チルインジウム３０ｇを充填し、シリンダー上部の管７
より窒素ガスを３００ｃｃ／ｌｌ１ｉｎの流量で供給し
、管６から排出されるガスを、キシレンとエチルアルコ
ールの混合溶媒５０ｃｃに吹き込み、２０時間間隔で採
取した。得られた溶液に２ｃｃの水を添加し、乾固後、
インジウム量を測定し、シリンダーから排出されたイン
ジウム量の変動を求めた。この結果を第２図に示した。The upper part of this filter 2 is filled with 30g of trimethylindium with an average particle size of 100μ, and the tube 7 at the upper part of the cylinder is
Nitrogen gas was supplied at a flow rate of 300 cc/11 in, and the gas discharged from tube 6 was blown into 50 cc of a mixed solvent of xylene and ethyl alcohol, and collected at 20 hour intervals. 2 cc of water was added to the obtained solution, and after drying,
The amount of indium was measured and the fluctuation in the amount of indium discharged from the cylinder was determined. The results are shown in FIG.
この結果から明らかなように、充填されたトリメチルイ
ンジウムの量が減少していっても、排出されるインジウ
ム量にほとんど変動がないことが分かる。As is clear from this result, even if the amount of filled trimethylindium decreases, there is almost no change in the amount of indium discharged.
［発明の効果］
本発明の気相成長用シリンダーは、気相成長装置へ長期
に亘って、均一で一定量の原料を供給することができ、
このため組成の均等な単結晶薄膜を得ることができると
いう格別の効果を奏するものである。[Effects of the Invention] The cylinder for vapor phase growth of the present invention can supply a uniform and constant amount of raw material to the vapor phase growth apparatus over a long period of time,
Therefore, it is possible to obtain a single crystal thin film having a uniform composition, which is a special effect.
第１図は、本発明の好ましい態様を示す気相成長用シリ
ンダーの概略図である。
１・・・・・・シリンダー ２・・・・・・フィルター
３・・・・・・充填室、５・・・・・・空室第２図は、
実験例の結果を示すグラフで、縦軸はトリメチルインジ
ウムの排出量を、横軸はトリメチルインジウムの充填量
に対するトリメチルインジウムの排出量の割合（％）を
示す。FIG. 1 is a schematic diagram of a cylinder for vapor phase growth showing a preferred embodiment of the present invention. 1...Cylinder 2...Filter 3...Filling chamber, 5...Empty chamber Figure 2 shows:
In the graph showing the results of the experimental example, the vertical axis shows the amount of trimethylindium discharged, and the horizontal axis shows the ratio (%) of the amount of trimethylindium discharged to the amount of trimethylindium filled.
Claims (1)
置へ供給する気相成長用シリンダーにおいて、シリンダ
ー内の下方部に多孔質のフィルターを設け、当該フィル
ターの上部に有機金属化合物の充填室を形成するととも
に、当該フィルターの下部に空室を形成したことを特徴
とする気相成長用シリンダー。In a cylinder for vapor phase growth that supplies an organometallic compound that is solid at the operating temperature to a vapor phase growth apparatus, a porous filter is provided in the lower part of the cylinder, and a chamber filled with the organometallic compound is provided in the upper part of the filter. A cylinder for vapor phase growth, characterized in that a hollow chamber is formed at the bottom of the filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32624688A JPH02172889A (en) | 1988-12-26 | 1988-12-26 | Cylinder for vapor growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32624688A JPH02172889A (en) | 1988-12-26 | 1988-12-26 | Cylinder for vapor growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02172889A true JPH02172889A (en) | 1990-07-04 |
Family
ID=18185628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32624688A Pending JPH02172889A (en) | 1988-12-26 | 1988-12-26 | Cylinder for vapor growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02172889A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002083777A (en) * | 2000-05-31 | 2002-03-22 | Shipley Co Llc | Bubbler |
| JP2007046084A (en) * | 2005-08-08 | 2007-02-22 | Lintec Co Ltd | Vaporizer, and liquid vaporizing-feeding device using the same |
| US20120266967A1 (en) * | 2009-11-02 | 2012-10-25 | Sigma-Aldrich Co. Llc | Evaporator |
-
1988
- 1988-12-26 JP JP32624688A patent/JPH02172889A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002083777A (en) * | 2000-05-31 | 2002-03-22 | Shipley Co Llc | Bubbler |
| JP2007046084A (en) * | 2005-08-08 | 2007-02-22 | Lintec Co Ltd | Vaporizer, and liquid vaporizing-feeding device using the same |
| US20120266967A1 (en) * | 2009-11-02 | 2012-10-25 | Sigma-Aldrich Co. Llc | Evaporator |
| JP2013509736A (en) * | 2009-11-02 | 2013-03-14 | シグマ−アルドリッチ・カンパニー、エルエルシー | Evaporator |
| US9297071B2 (en) * | 2009-11-02 | 2016-03-29 | Sigma-Aldrich Co. Llc | Solid precursor delivery assemblies and related methods |
| TWI550127B (en) * | 2009-11-02 | 2016-09-21 | 辛格瑪艾瑞契公司 | Solid precursor delivery assemblies and related methods |
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