JPH10163797A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPH10163797A
JPH10163797A JP8320522A JP32052296A JPH10163797A JP H10163797 A JPH10163797 A JP H10163797A JP 8320522 A JP8320522 A JP 8320522A JP 32052296 A JP32052296 A JP 32052296A JP H10163797 A JPH10163797 A JP H10163797A
Authority
JP
Japan
Prior art keywords
saw
insulating substrate
saw element
substrate
piezoelectric substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8320522A
Other languages
Japanese (ja)
Inventor
Atsuhiro Iioka
淳弘 飯岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP8320522A priority Critical patent/JPH10163797A/en
Publication of JPH10163797A publication Critical patent/JPH10163797A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid

Abstract

PROBLEM TO BE SOLVED: To set the airtight ability of vibration space in SAW to be secure and to easily form vibration space with uniform height and width by providing a comb-line electrode in a recessed part area formed in a piezoelectric substrate and fitting the piezoelectric substrate on an insulating substrate by means of making the recessed part area face the surface of the insulating substrate. SOLUTION: An SAW element 1 is generated by forming the recessed part area 10 and a peripheral frame area 10a on one main face of the piezoelectric substrate and providing a pair of comb-line IDT electrodes 5 formed so that they are engaged each other in the recessed part 10. The recessed part area 10-side where the IDT electrodes 5 are provided is set to be phase down constitution facing the insulating substrate 7. A connection body 3 is electrically conducted by conductive adhesion and is connected to a conductor pattern 4. The SAW element 1 is placed and fixed on the insulating substrate 7. Then, insulating resin 6 is applied to and molded into the lower part of the outer face of the SAW element 1 for fixing the SAW element 1 and making the airtight ability of vibration space where the IDT electrodes 5 exist to be secure.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、自動車電話及び携
帯電話等の移動体無線機器に内蔵される共振器及び周波
数帯域フィルタ用の弾性表面波装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device for a resonator and a frequency band filter incorporated in a mobile radio device such as a mobile phone and a mobile phone.

【0002】[0002]

【従来の技術】従来の弾性表面波(Surface Acoustic W
ave 、以下SAWと略す)装置S1 ,S2 の断面図を図
5,6に示す。図5において、11はSAW素子、12
は入出力電極のパッド、13はパッケージ表面に形成さ
れ外部の駆動回路、共振回路、接地回路等に接続される
導電パターンのパッド、14はSAW素子用の圧電基板
上に形成された櫛歯状電極のIDT(Inter Digital Tr
ansducer)電極、15〜17はセラミック,樹脂等の絶
縁性材料からなるパッケージ、18はセラミック,金属
(Al,Cu)等からなる蓋体である。19はパッド1
2,13を接続するワイヤである。同図の構成では、パ
ッケージ15〜17の内部にSAW素子11を接着剤に
より載置固定し、パッド12,13をAl,Au等のワ
イヤ19により電気的に接続し、さらに蓋体18をはん
だ,接着剤等にによりパッケージ17上から接着して気
密を保持していた。
2. Description of the Related Art Conventional surface acoustic waves (Surface Acoustic W)
ave, hereinafter abbreviated as SAW) FIGS. 5 and 6 are sectional views of the devices S 1 and S 2 . In FIG. 5, reference numeral 11 denotes a SAW element;
Is a pad of an input / output electrode, 13 is a pad of a conductive pattern formed on the surface of the package and connected to an external drive circuit, a resonance circuit, a ground circuit, etc., and 14 is a comb tooth formed on a piezoelectric substrate for a SAW element. Electrode IDT (Inter Digital Tr
An electrode 15 to 17 is a package made of an insulating material such as ceramic or resin, and 18 is a lid made of ceramic, metal (Al, Cu) or the like. 19 is pad 1
It is a wire connecting 2 and 13. In the configuration shown in the figure, the SAW element 11 is placed and fixed inside the packages 15 to 17 with an adhesive, the pads 12 and 13 are electrically connected by wires 19 such as Al and Au, and the lid 18 is soldered. The package 17 was adhered from above the package 17 with an adhesive or the like to maintain airtightness.

【0003】図6において、21はSAW素子、22は
入出力電極のパッド、23はパッド22とパッド24を
電気的に接続するバンプ(略半球状、略半楕円球状ある
いは略円柱状等の凸部)等の接続体、24は基板27表
面に形成され外部の駆動回路、共振回路、接地回路等に
接続される導電パターンのパッド、25はSAW素子用
の圧電基板上に形成された櫛歯状電極のIDT(Inter
Digital Transducer)電極、26はSAW装置全体にモ
ールドされ保護膜としての絶縁性樹脂、27はセラミッ
ク,樹脂等の絶縁性材料からなる基板である。同図の構
成は、IDT電極25が設けられた機能面が基板27に
対面したフェースダウン構成であり、絶縁性樹脂26が
機能面が存在するSAWの振動空間にまで入り込んでい
る。
In FIG. 6, reference numeral 21 denotes a SAW element; 22, an input / output electrode pad; and 23, a bump (an approximately semi-spherical, approximately semi-elliptical spherical, or substantially cylindrical convex) for electrically connecting the pad 22 to the pad 24. 24) is a conductive pattern pad formed on the surface of the substrate 27 and connected to an external drive circuit, resonance circuit, ground circuit, etc. 25 is a comb tooth formed on a piezoelectric substrate for a SAW element IDT (Inter)
Digital Transducer) electrodes 26, an insulating resin molded over the entire SAW device as a protective film, and 27 a substrate made of an insulating material such as ceramic or resin. The configuration shown in the figure is a face-down configuration in which the functional surface on which the IDT electrode 25 is provided faces the substrate 27, and the insulating resin 26 enters the vibration space of the SAW where the functional surface exists.

【0004】図6の接続体23は、Au,Al等の金属
のワイヤをボールボンディング法によりバンプとなるよ
う形成するか、Au,はんだ等からなるバンプを蒸着
法、印刷法、転写法、無電解メッキ法又は電解メッキ法
等により、パッド22上に形成して得られる。そして、
接続体23を設けた圧電基板を、接続体23とパッド2
4とを位置合わせして、導電性接着剤の塗布やはんだの
リフロー溶融法により接続し、基板27上に固定する。
The connecting body 23 shown in FIG. 6 is formed by forming a metal wire such as Au, Al or the like into a bump by a ball bonding method, or forming a bump made of Au, solder or the like by a vapor deposition method, a printing method, a transfer method, It is obtained by forming on the pad 22 by an electrolytic plating method or an electrolytic plating method. And
The piezoelectric substrate provided with the connection body 23 is connected to the connection body 23 and the pad 2.
4 and are connected by applying a conductive adhesive or by a reflow melting method of solder, and fixed on the substrate 27.

【0005】また、他の従来例として、図6と同様の構
成で、絶縁性樹脂26が振動空間(IDT電極25が存
在する空間)に入り込まないように、圧電基板からなる
SAW素子21又は基板27の接続体23の振動空間側
に、ダムを設けたものが知られている(特開平5−55
303号参照)。さらに、他の従来例として、図6と同
様の構成で、圧電基板の機能面にSAW伝搬路を囲むよ
うにシリコーン樹脂等からなる環状部材を設け、基板2
7にフェースダウン構成となるように取付けることによ
り、絶縁性樹脂26が振動空間に入り込まないようにし
たものが知られている(特開平5−90885号参
照)。
As another conventional example, a SAW element 21 made of a piezoelectric substrate or a substrate having the same configuration as that shown in FIG. 6 is used to prevent the insulating resin 26 from entering the vibration space (the space where the IDT electrode 25 exists). 27, a dam is provided on the vibration space side of the connecting body 23 (Japanese Patent Laid-Open No. 5-55).
No. 303). Further, as another conventional example, an annular member made of silicone resin or the like is provided on the functional surface of the piezoelectric substrate so as to surround the SAW propagation path with the same configuration as that of FIG.
7 is mounted in a face-down configuration so as to prevent the insulating resin 26 from entering the vibration space (see Japanese Patent Laid-Open No. 5-90885).

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上記図
5の従来例においては、ワイヤ19を使用しているた
め、ワイヤ19が存在する横方向と高さ方向の距離の分
だけSAW装置の体積が大きくなり、小型軽量化、薄型
化に不利である。また、ワイヤボンディング装置により
ワイヤを1本ずつ接続しているので、製造工程が煩雑に
なり、製造コストも大きくなる。更に、ワイヤ19が存
在することにより、不要なインダクタンス成分を付加す
ることになり、SAW装置の周波数特性が変化し、設計
上それを考慮する手間が生じるという問題点があった。
However, in the conventional example shown in FIG. 5, since the wire 19 is used, the volume of the SAW device is reduced by the distance between the horizontal direction where the wire 19 exists and the height direction. This is disadvantageous in reducing the size, weight, and thickness. In addition, since the wires are connected one by one by the wire bonding apparatus, the manufacturing process becomes complicated and the manufacturing cost increases. Furthermore, the presence of the wire 19 adds an unnecessary inductance component, changes the frequency characteristic of the SAW device, and causes a problem that it takes time to consider it in design.

【0007】上記図6の従来例では、絶縁性樹脂26が
振動空間(IDT電極25が存在する空間)に入り込
み、機能面に接しているため、SAWの伝搬を阻害して
おり、SAW装置としての所望の特性を得るのが困難で
ある。また、絶縁性樹脂26が振動空間に入り込まない
ように、ダムを設けたり、SAW伝搬路を囲むように機
能面に環状部材を設けても、絶縁性樹脂26の入り込み
を完全に阻止するには不十分であった。前記環状部材を
設ける場合には、環状部材がシリコーン樹脂等の塗布に
より形成されるため、振動空間を均一な高さ、幅で正確
に形成するのが困難であった。
In the conventional example shown in FIG. 6, the insulating resin 26 enters the vibration space (the space where the IDT electrode 25 is present) and is in contact with the functional surface. It is difficult to obtain the desired properties of Even if a dam is provided so that the insulating resin 26 does not enter the vibration space or an annular member is provided on the functional surface so as to surround the SAW propagation path, it is possible to completely prevent the insulating resin 26 from entering. It was not enough. When the annular member is provided, it is difficult to accurately form a vibration space with a uniform height and width because the annular member is formed by applying a silicone resin or the like.

【0008】従って、本発明は上記事情に鑑みて完成さ
れたものであり、その目的はSAWの振動空間への絶縁
性樹脂の入り込みを完全に阻止でき、振動空間を均一な
高さ、幅で正確に形成し、その結果、SAW装置の特性
劣化がなく、また薄型化及び小型軽量化され、更には低
コストで製造可能なものとすることにある。
Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to completely prevent the insulating resin from entering the vibration space of the SAW, and to make the vibration space uniform in height and width. An object of the present invention is to form the SAW device accurately, so that the SAW device is not deteriorated in characteristics, is thin, small, and lightweight, and can be manufactured at low cost.

【0009】[0009]

【課題を解決するための手段】本発明の弾性表面波装置
は、圧電基板の一主面に凹部領域とその周縁に枠領域を
形成し、該凹部領域内に少なくとも一対の櫛歯状電極を
設け、導電パターン及びそれに連なって外部に延出した
リードパターンをもった絶縁性基板に前記凹部領域側を
対面させ、前記枠領域を絶縁性基板に当接若しくは接着
して圧電基板を絶縁性基板に取付けるとともに、前記櫛
歯状電極の入出力電極と前記導電パターンを接続体を介
して電気的に導通したことを特徴とする。
A surface acoustic wave device according to the present invention comprises a concave region on one principal surface of a piezoelectric substrate and a frame region on the periphery thereof, and at least a pair of comb-like electrodes in the concave region. The recessed region side faces an insulating substrate having a conductive pattern and a lead pattern extending to the outside in connection with the conductive pattern, and the frame region is brought into contact with or adhered to the insulating substrate to form a piezoelectric substrate. And the input / output electrode of the comb-shaped electrode and the conductive pattern are electrically connected via a connector.

【0010】[0010]

【発明の実施の形態】本発明を図1〜図4により説明す
る。図1〜図4はSAW装置Sの4つの実施形態の断面
図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to FIGS. 1 to 4 are cross-sectional views of four embodiments of the SAW device S.

【0011】図1において、1はSAW素子、2は入出
力電極のパッド、3はバンプ等の電気的な接続体、4は
導電パターン、5はIDT電極、6は接着剤としての絶
縁性樹脂、7はセラミック,樹脂等からなる絶縁性基
板、8は外部の駆動回路、共振回路、接地回路等に接続
される絶縁性基板7に設けられたリードパターンであ
る。前記SAW素子1は、圧電基板の一主面に凹部領域
10とその周辺の枠領域10aを形成し、その凹部領域
10内に互いに噛み合うように形成された少なくとも一
対の櫛歯状電極のIDT電極5を設けることにより作製
する。前記IDT電極5は、所望の特性を得るために、
複数対の櫛歯状電極を、直列接続、並列接続、従続接続
等の方式で接続して構成してもよい。
In FIG. 1, 1 is a SAW element, 2 is an input / output electrode pad, 3 is an electrical connection such as a bump, 4 is a conductive pattern, 5 is an IDT electrode, and 6 is an insulating resin as an adhesive. Reference numeral 7 denotes an insulating substrate made of ceramic, resin, or the like, and reference numeral 8 denotes a lead pattern provided on the insulating substrate 7 connected to an external drive circuit, a resonance circuit, a ground circuit, and the like. The SAW element 1 has a concave region 10 and a peripheral frame region 10a formed on one main surface of a piezoelectric substrate, and at least a pair of IDT electrodes of a comb-shaped electrode formed so as to mesh with each other in the concave region 10. 5 is provided. The IDT electrode 5 is used to obtain desired characteristics.
A plurality of pairs of comb-shaped electrodes may be connected and connected in a series connection, parallel connection, cascade connection, or the like.

【0012】上記凹部領域10は、フォトリソグラフィ
法とエッチング法、機械的研削法又はレーザ加工法等に
より容易に形成でき、IDT電極5は蒸着法、スパッタ
リング法又はCVD法等の薄膜形成法により形成する。
凹部領域10の深さは、10〜150μmとするのが、
前記深さをバンプの高さと接続に用いる導電性接着剤等
の厚さに合致するよう容易に調整できる点で好適であ
る。また、接続体3は、Au,Al等の金属のワイヤを
ボールボンディング法によりバンプとなるよう形成する
か、Au,はんだ等からなるバンプを蒸着法、印刷法、
転写法、無電解メッキ法又は電解メッキ法等により、入
出力電極のパッド2上に形成することによって得られ
る。
The concave region 10 can be easily formed by a photolithography method, an etching method, a mechanical grinding method or a laser processing method, and the IDT electrode 5 is formed by a thin film forming method such as a vapor deposition method, a sputtering method or a CVD method. I do.
The depth of the concave region 10 is set to 10 to 150 μm,
This is preferable because the depth can be easily adjusted to match the height of the bump and the thickness of the conductive adhesive used for connection. The connection body 3 is formed by forming a wire of a metal such as Au, Al or the like into a bump by a ball bonding method, or forming a bump made of Au, solder or the like by a vapor deposition method, a printing method, or the like.
It is obtained by forming it on the input / output electrode pad 2 by a transfer method, an electroless plating method, an electrolytic plating method, or the like.

【0013】そして、IDT電極5が設けられた凹部領
域10側が絶縁性基板7に対面するフェースダウン構成
として、接続体3を導電パターン4に導電性接着剤、は
んだ等により電気的に導通させて接続し、SAW素子1
を絶縁性基板7上に載置固定する。このとき、接続体3
を導電パターン4に当接し押圧するだけで接続しても構
わない。
Then, the connection body 3 is electrically connected to the conductive pattern 4 by a conductive adhesive, solder, or the like in a face-down configuration in which the concave region 10 provided with the IDT electrode 5 faces the insulating substrate 7. Connect, SAW element 1
Is placed and fixed on the insulating substrate 7. At this time, the connection body 3
May be connected only by contacting and pressing the conductive pattern 4.

【0014】その後、SAW素子1の固定とIDT電極
5が存在する振動空間の気密を確実にするために、絶縁
性樹脂6をSAW素子1の外側面下部に塗布モールドし
硬化させ、SAW装置を完成する。このとき、必ずしも
絶縁性樹脂6をモールドする必要はないが、SAW素子
1の固定と振動空間の気密を確実にするうえで、モール
ドする方が好ましい。また、絶縁性樹脂6の材料として
は、熱硬化性のエポキシ樹脂、シリコーン樹脂、フェノ
ール樹脂、ポリイミド樹脂、低融点ガラス(ガラスフリ
ット)及び熱可塑性ポリフェニレンサルファイド等が好
適であるが、接着性、低吸湿性、電気絶縁性、機械的強
度、耐薬品性、耐熱性等の点でエポキシ樹脂がよい。
Thereafter, in order to secure the SAW element 1 and to ensure the hermeticity of the vibration space in which the IDT electrode 5 is present, an insulating resin 6 is applied and molded to the lower portion of the outer surface of the SAW element 1 and is cured. Complete. At this time, it is not always necessary to mold the insulating resin 6, but it is preferable to mold the SAW element 1 in order to secure the SAW element 1 and to ensure the airtightness of the vibration space. As the material of the insulating resin 6, thermosetting epoxy resin, silicone resin, phenol resin, polyimide resin, low melting point glass (glass frit), thermoplastic polyphenylene sulfide, and the like are preferable. Epoxy resins are preferred in terms of hygroscopicity, electrical insulation, mechanical strength, chemical resistance, heat resistance, and the like.

【0015】図1の絶縁性基板7に設けられ、導電パタ
ーン4に連なったリードパターン8は、絶縁性基板7の
裏面に延出して設けられているため、SAW装置を他の
回路基板上に表面実装することができるが、必ずしもそ
のように構成せずともよく、リードパターン8を絶縁性
基板7の上面にのみ設けてもよい。
Since the lead pattern 8 provided on the insulating substrate 7 of FIG. 1 and connected to the conductive pattern 4 is provided so as to extend on the back surface of the insulating substrate 7, the SAW device can be mounted on another circuit board. Although surface mounting is possible, such a configuration is not always necessary, and the lead pattern 8 may be provided only on the upper surface of the insulating substrate 7.

【0016】図2は、絶縁性樹脂6をSAW素子1全体
にモールドしたものであり、圧電基板を保護し、損傷、
汚れの付着による特性劣化を防止するうえで好適であ
る。
FIG. 2 shows an insulating resin 6 molded over the entire SAW element 1. The insulating resin 6 protects the piezoelectric substrate and prevents damage to the piezoelectric substrate.
It is suitable for preventing deterioration of characteristics due to adhesion of dirt.

【0017】図3は、圧電基板の凹部領域10周縁の枠
領域10aに絶縁性樹脂6を塗布して、絶縁性基板7上
にSAW素子1を接着−固定したものであり、簡単な構
成で確実な固定と気密構造が得られる。
FIG. 3 shows a simple structure in which the insulating resin 6 is applied to the frame region 10a around the concave region 10 of the piezoelectric substrate and the SAW element 1 is bonded and fixed on the insulating substrate 7. A secure fixing and an airtight structure can be obtained.

【0018】図4は、図1の構成において、SAW素子
1全体を覆うように、セラミック、金属(Al,Cu,
ステンレス,真鍮等)、樹脂等からなる蓋体9を、はん
だ等の接着剤6aを介して絶縁性基板7上に設けたもの
である。このような構成により、SAW素子1の保護と
気密構造がさらに確実になる。
FIG. 4 shows the structure of FIG. 1 in which ceramic, metal (Al, Cu,
A cover 9 made of a material such as stainless steel or brass) or resin is provided on the insulating substrate 7 via an adhesive 6a such as solder. With such a configuration, the protection of the SAW element 1 and the hermetic structure are further ensured.

【0019】図1〜図4において、振動空間内に低湿度
(室温(20〜30℃)で相対湿度50%以下)の空気
を封入し密閉することにより、IDT電極5の酸化によ
る劣化を抑制でき好ましい。また、低湿度の空気の代わ
りに、窒素ガス,アルゴンガス等の不活性ガス等を封入
し密閉しても、同様の効果が得られる。
In FIG. 1 to FIG. 4, deterioration of the IDT electrode 5 due to oxidation is suppressed by enclosing and sealing air of low humidity (room temperature (20 to 30 ° C.) and a relative humidity of 50% or less) in the vibration space. It is preferable. The same effect can be obtained by enclosing and sealing an inert gas such as nitrogen gas or argon gas instead of low-humidity air.

【0020】本発明において、IDT電極5はAlある
いはAl合金(Al−Cu系,Al−Ti系等)からな
り、特にAlが励振効率が高く、材料コストが低いため
好ましい。また、IDT電極5の形状は、互いに噛み合
うように形成された櫛歯状であるが、複数の電極指を平
行に配列した反射器のようなスリット型のものにも適用
でき、それらを併用したタイプであってもよい。
In the present invention, the IDT electrode 5 is made of Al or an Al alloy (Al-Cu system, Al-Ti system, etc.), and Al is particularly preferable because of its high excitation efficiency and low material cost. The IDT electrode 5 has a comb-like shape formed so as to mesh with each other. However, the IDT electrode 5 can be applied to a slit-type electrode such as a reflector in which a plurality of electrode fingers are arranged in parallel. It may be a type.

【0021】そして、IDT電極5の対数は50〜20
0程度、電極指の幅は0.1〜10.0μm程度、電極
指の間隔は0.1〜10.0μm程度、電極指の交差幅
は10〜80μm程度、IDT電極5の厚みは0.2〜
0.4μm程度とすることが、共振器あるいはフィルタ
としての所期の特性を得るうえで好適である。また、I
DT電極5のSAWの伝搬路の両端に、SAWを反射し
効率よく共振させるための反射器を設けてもよく、更に
は、電極指間にZnO,AlO等の圧電材料を成膜すれ
ば、SAWの共振効率が向上し好適である。
The logarithm of the IDT electrode 5 is 50 to 20.
About 0, the width of the electrode fingers is about 0.1 to 10.0 μm, the interval between the electrode fingers is about 0.1 to 10.0 μm, the cross width of the electrode fingers is about 10 to 80 μm, and the thickness of the IDT electrode 5 is about 0. Two
The thickness of about 0.4 μm is preferable for obtaining desired characteristics as a resonator or a filter. Also, I
At both ends of the SAW propagation path of the DT electrode 5, reflectors for reflecting the SAW and efficiently resonating may be provided. Further, if a piezoelectric material such as ZnO or AlO is formed between the electrode fingers, This is preferable because the resonance efficiency of the SAW is improved.

【0022】SAW素子1用の圧電基板としては、36
°Yカット−X伝搬のLiTaO3結晶、64°Yカッ
ト−X伝搬のLiNbO3 結晶、45°Xカット−Z伝
搬のLiB4 7 結晶、水晶等が好適であり、特に36
°Yカット−X伝搬のLiTaO3 結晶は通過帯域幅が
広く、また45°Xカット−Z伝搬のLiB4 7 結晶
は電気機械結合係数が大きく且つ群遅延時間温度係数が
小さいため好ましい。圧電基板の厚みは0.3〜0.5
mm程度がよく、0.3mm未満では圧電基板が脆くな
り、0.5mm超では材料コストが大きくなる。
As the piezoelectric substrate for the SAW element 1, 36
LiTaO 3 crystal of ° Y cut-X propagation, LiNbO 3 crystal of 64 ° Y cut-X propagation, LiB 4 O 7 crystal of 45 ° X cut-Z propagation, quartz, etc. are particularly preferred.
The LiTaO 3 crystal propagated by ° Y cut-X has a wide pass band width, and the LiB 4 O 7 crystal propagated by 45 ° X cut-Z has a large electromechanical coupling coefficient and a small group delay time temperature coefficient. The thickness of the piezoelectric substrate is 0.3-0.5
mm is good. If it is less than 0.3 mm, the piezoelectric substrate becomes brittle, and if it exceeds 0.5 mm, the material cost increases.

【0023】かくして、本発明は、SAWの振動空間へ
の絶縁性樹脂の入り込みを完全に阻止でき、振動空間を
均一な高さ、幅で正確に形成し、その結果、SAW装置
の特性劣化がなく、また薄型化及び小型軽量化され、更
には低コストで製造可能となるという作用効果を有す
る。
Thus, according to the present invention, it is possible to completely prevent the insulating resin from entering the vibration space of the SAW, and to form the vibration space accurately with a uniform height and width. In addition, it has the effect of being thinner, smaller and lighter, and capable of being manufactured at low cost.

【0024】なお、本発明は上記の実施形態に限定され
るものではなく、本発明の要旨を逸脱しない範囲内で種
々の変更は何等差し支えない。
It should be noted that the present invention is not limited to the above embodiment, and various changes may be made without departing from the scope of the present invention.

【0025】[0025]

【実施例】図1に示すSAW装置Sを以下のように構成
した。SAW素子1用の圧電基板材料として36°Yカ
ット−X伝搬のLiTaO3 結晶を用い、そのサイズは
1.1mm×1.5mm×0.4mmとし、圧電基板の
一方の主面の中央部を研磨して凹部領域10及びその周
縁の枠領域10aを形成し、凹部領域10の深さを45
μmとした。前記凹部領域10内に、互いに噛み合うよ
うに構成された一対の櫛歯状電極であるIDT電極5及
び入出力電極のパッド2を蒸着法により形成した。この
IDT電極5及び入出力電極のパッド2はAlからな
り、IDT電極5の対数は100程度で、IDT電極5
及び入出力電極のパッド2の厚みは0.4μm程度であ
った。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The SAW device S shown in FIG. 1 was constructed as follows. A 36 ° Y-cut X-propagation LiTaO 3 crystal is used as the piezoelectric substrate material for the SAW element 1, the size is 1.1 mm × 1.5 mm × 0.4 mm, and the center of one main surface of the piezoelectric substrate is Polishing is performed to form the recessed region 10 and its peripheral frame region 10a, and the depth of the recessed region 10 is set to 45 degrees.
μm. In the recess region 10, a pair of comb-shaped electrodes, ie, an IDT electrode 5 and an input / output electrode pad 2 which are configured to mesh with each other, were formed by a vapor deposition method. The IDT electrode 5 and the pad 2 of the input / output electrode are made of Al, and the logarithm of the IDT electrode 5 is about 100.
The thickness of the input / output electrode pad 2 was about 0.4 μm.

【0026】また、絶縁性基板7として、サイズ3.0
mm×3.0mm×0.5mmのアルミナセラミック基
板を用い、その表面の所定の箇所にAuからなるリード
パターン8及び導電パターン4を、電解メッキ法によっ
て形成した。尚、リードパターン8は、SAW素子1に
対面する側の面(上面)の裏面(下面)に形成し、導電
パターン4に電気的に導通するようにスルーホールによ
り接続した。
The insulating substrate 7 has a size of 3.0.
A lead pattern 8 and a conductive pattern 4 made of Au were formed at predetermined positions on the surface of an alumina ceramic substrate of mm × 3.0 mm × 0.5 mm by electrolytic plating. Note that the lead pattern 8 was formed on the back surface (lower surface) of the surface (upper surface) facing the SAW element 1 and was connected to the conductive pattern 4 by through holes so as to be electrically conducted.

【0027】接続体3は、Auのワイヤをボールボンデ
ィング法によりバンプ(略半楕円球状の凸部)となるよ
うに入出力電極のパッド2上に形成した。バンプの入出
力電極のパッド2面における直径は75μmで、高さは
45μmであり、SAW素子1と絶縁性基板7間にSA
Wが伝搬可能な振動空間を形成できた。
The connection body 3 was formed on the pad 2 of the input / output electrode so that the Au wire was formed into a bump (a substantially semi-elliptical spherical projection) by a ball bonding method. The diameter of the input / output electrodes of the bumps on the surface of the pad 2 is 75 μm, the height is 45 μm, and the SA between the SAW element 1 and the insulating substrate 7
A vibration space in which W can propagate was formed.

【0028】接続体3と導電パターン4との接続は、A
g−Pd合金を含む熱硬化性のエポキシ樹脂系導電性接
着剤をバンプに塗布し、導電パターン4にアライメント
して、100℃で加熱接着した。その後、前記振動空間
の気密を確保するため、室温(約25℃)で相対湿度約
30%の雰囲気中で、絶縁性樹脂6として熱硬化性エポ
キシ樹脂系接着剤をSAW素子1の外側面下部に塗布−
モールドし、130℃で加熱硬化した。このようにし
て、SAW素子1がフェースダウン構成で取付けられた
SAW装置を作製し、その高さは約0.9mmと1mm
以下であった。
The connection between the connection body 3 and the conductive pattern 4 is A
A thermosetting epoxy resin-based conductive adhesive containing a g-Pd alloy was applied to the bumps, aligned with the conductive pattern 4, and heated and bonded at 100 ° C. Thereafter, in order to secure the airtightness of the vibration space, a thermosetting epoxy resin-based adhesive is used as the insulating resin 6 in the lower part of the outer surface of the SAW element 1 in an atmosphere at room temperature (about 25 ° C.) and a relative humidity of about 30%. Apply to
It was molded and cured by heating at 130 ° C. In this way, a SAW device in which the SAW element 1 is mounted in a face-down configuration is manufactured, and its height is about 0.9 mm and 1 mm.
It was below.

【0029】前記SAW装置の製造においては、従来の
ワイヤボンディング工程が不要となり、その結果、ワイ
ヤが横方向及び高さ方向に延びることによる大型化を解
消し、小型軽量化、薄型化を実現できた。また、従来の
SAWフィルターが駆動信号の入出力をワイヤにより行
っていたため、ワイヤのインダクタンス成分が発生し、
そのため高周波側の減衰量が劣化していたが、本発明の
ようなフリップチップ実装とすることにより、高周波側
の減衰量が高いフィルター特性を得ることができた。
In the manufacture of the SAW device, the conventional wire bonding process is not required, and as a result, the size increase due to the wires extending in the horizontal direction and the height direction can be eliminated, and the reduction in size, weight, and thickness can be realized. Was. In addition, since the conventional SAW filter performs input and output of the drive signal by the wire, an inductance component of the wire occurs,
For this reason, the attenuation on the high frequency side deteriorated. However, by using the flip-chip mounting as in the present invention, a filter characteristic having a high attenuation on the high frequency side could be obtained.

【0030】[0030]

【発明の効果】本発明は、圧電基板に形成された凹部領
域内に櫛歯状電極を設け、凹部領域を絶縁性基板表面に
対面させて圧電基板を絶縁性基板上に取付けることによ
り、SAWの振動空間の気密を確実にし、振動空間を均
一な高さ、幅で正確に形成するので、振動空間への絶縁
性樹脂、ほこり等の入り込みを完全に阻止し、また、ワ
イヤによる駆動信号の入出力を不要としたので、SAW
装置の特性劣化を防止できる。また、SAW装置が薄型
化及び小型軽量化され、更には低コストで製造可能とな
るという作用効果を有する。
According to the present invention, a SAW is provided by providing a comb-shaped electrode in a concave region formed in a piezoelectric substrate, mounting the piezoelectric substrate on the insulating substrate with the concave region facing the surface of the insulating substrate. The vibration space is securely hermetically sealed, and the vibration space is accurately formed with a uniform height and width.Thus, it is possible to completely prevent insulative resin and dust from entering the vibration space, No input / output required, so SAW
Deterioration of device characteristics can be prevented. Further, the SAW device has an effect of being reduced in thickness, size, and weight, and can be manufactured at low cost.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による弾性表面波装置の一実施形態の断
面図である。
FIG. 1 is a sectional view of an embodiment of a surface acoustic wave device according to the present invention.

【図2】弾性表面波装置の他の実施形態の断面図であ
る。
FIG. 2 is a sectional view of another embodiment of the surface acoustic wave device.

【図3】弾性表面波装置の他の実施形態の断面図であ
る。
FIG. 3 is a sectional view of another embodiment of the surface acoustic wave device.

【図4】弾性表面波装置の他の実施形態の断面図であ
る。
FIG. 4 is a sectional view of another embodiment of the surface acoustic wave device.

【図5】従来の弾性表面波装置の断面図である。FIG. 5 is a sectional view of a conventional surface acoustic wave device.

【図6】従来の他の弾性表面波装置の断面図である。FIG. 6 is a sectional view of another conventional surface acoustic wave device.

【符号の説明】[Explanation of symbols]

1:SAW素子 2:入出力電極のパッド 3:接続体 4:導電パターン 5:IDT電極 6:絶縁性樹脂 7:絶縁性基板 8:リードパターン 10:凹部領域 10a:枠領域 1: SAW element 2: input / output electrode pad 3: connector 4: conductive pattern 5: IDT electrode 6: insulating resin 7: insulating substrate 8: lead pattern 10: concave area 10a: frame area

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】圧電基板の一主面に凹部領域とその周縁に
枠領域を形成し、該凹部領域内に少なくとも一対の櫛歯
状電極を設け、導電パターン及びそれに連なって外部に
延出したリードパターンをもった絶縁性基板に前記凹部
領域側を対面させ、前記枠領域を絶縁性基板に当接若し
くは接着して圧電基板を絶縁性基板に取付けるととも
に、前記櫛歯状電極の入出力電極と前記導電パターンを
接続体を介して電気的に導通したことを特徴とする弾性
表面波装置。
1. A concave region and a frame region are formed on one peripheral surface of a piezoelectric substrate, and at least a pair of comb-shaped electrodes are provided in the concave region, and the conductive pattern and the comb-like electrode extend to the outside. The concave region side faces the insulating substrate having a lead pattern, the frame region is abutted or adhered to the insulating substrate to attach the piezoelectric substrate to the insulating substrate, and the input / output electrodes of the comb-shaped electrode A surface acoustic wave device electrically connected to the conductive pattern via a connector.
JP8320522A 1996-11-29 1996-11-29 Surface acoustic wave device Pending JPH10163797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8320522A JPH10163797A (en) 1996-11-29 1996-11-29 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8320522A JPH10163797A (en) 1996-11-29 1996-11-29 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPH10163797A true JPH10163797A (en) 1998-06-19

Family

ID=18122381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8320522A Pending JPH10163797A (en) 1996-11-29 1996-11-29 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPH10163797A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001022580A1 (en) * 1999-09-20 2001-03-29 Kabushiki Kaisha Toshiba Surface acoustic wave device and method of producing the same
US6498422B1 (en) 1998-09-02 2002-12-24 Murata Manufacturing Co., Ltd. Electronic component such as an saw device and method for producing the same
JP2003037472A (en) * 2001-07-23 2003-02-07 Hitachi Metals Ltd Composite high-frequeny component and radio transmitter-receiver
WO2007080734A1 (en) 2006-01-11 2007-07-19 Murata Manufacturing Co., Ltd. Method for manufacturing surface acoustic wave device and surface acoustic wave device
JP2013225749A (en) * 2012-04-20 2013-10-31 Kyocera Corp Piezoelectric device and module component
CN107181471A (en) * 2016-03-09 2017-09-19 天津威盛电子有限公司 SAW resonator and its manufacture method with negative cross section metal structure

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6498422B1 (en) 1998-09-02 2002-12-24 Murata Manufacturing Co., Ltd. Electronic component such as an saw device and method for producing the same
WO2001022580A1 (en) * 1999-09-20 2001-03-29 Kabushiki Kaisha Toshiba Surface acoustic wave device and method of producing the same
JP4737580B2 (en) * 2001-07-23 2011-08-03 日立金属株式会社 Composite high-frequency component and wireless transceiver using the same
JP2003037472A (en) * 2001-07-23 2003-02-07 Hitachi Metals Ltd Composite high-frequeny component and radio transmitter-receiver
WO2007080734A1 (en) 2006-01-11 2007-07-19 Murata Manufacturing Co., Ltd. Method for manufacturing surface acoustic wave device and surface acoustic wave device
JPWO2007080734A1 (en) * 2006-01-11 2009-06-11 株式会社村田製作所 Method for manufacturing surface acoustic wave device and surface acoustic wave device
US7629866B2 (en) 2006-01-11 2009-12-08 Murata Manufacturing Co., Ltd. Method for manufacturing surface acoustic wave device and surface acoustic wave device
EP1973228A4 (en) * 2006-01-11 2010-06-02 Murata Manufacturing Co Method for manufacturing surface acoustic wave device and surface acoustic wave device
JP4697232B2 (en) * 2006-01-11 2011-06-08 株式会社村田製作所 Method for manufacturing surface acoustic wave device and surface acoustic wave device
EP1973228A1 (en) * 2006-01-11 2008-09-24 Murata Manufacturing Co. Ltd. Method for manufacturing surface acoustic wave device and surface acoustic wave device
JP2013225749A (en) * 2012-04-20 2013-10-31 Kyocera Corp Piezoelectric device and module component
CN107181471A (en) * 2016-03-09 2017-09-19 天津威盛电子有限公司 SAW resonator and its manufacture method with negative cross section metal structure
CN107181471B (en) * 2016-03-09 2020-09-01 天津威盛电子有限公司 SAW resonator having negative cross-section metal structure and method of manufacturing the same

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